SCS210AGHR [ROHM]

SiC Schottky Barrier Diode;


型号：	SCS210AGHR
厂家：	ROHM
描述：	SiC Schottky Barrier Diode
文件：	总6页 (文件大小：899K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SCS210AGHR

Datasheet

SiC Schottky Barrier Diode

AEC-Q101 Qualified

(1)

TO-220AC

V_R

I_F

650V

10A

Q_C

15nC

(3)

(2)

Features

1) Shorter recovery time

Inner circuit

(1)

2) Reduced temperature dependence

3) High-speed switching possible

(1) Cathode

(2) Cathode

(3) Anode

(2)

(3)

Packaging specifications

Packaging

Tube

Reel size (mm)

Construction

Tape width (mm)

Type

Silicon carbide epitaxial planer schottky diode

Basic ordering unit (pcs)

Packing code

Marking

SCS210AG

Absolute maximum ratings (Tj = 25°C)

Parameter

Symbol

V_RM

V_R

Value

650

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

650

10*¹

40*²

I_F

Continuous forward current

150*³

31*⁴

I_FSM

Surge no repetitive forward current

41*⁵

I_FRM

P_D

Repetitive peak forward current

Total power disspation

78*⁶

°C

Junction temperature

175

Range of storage temperature

Tstg

55 to 175

*1 Tc=133°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10s square, Tj=25°C

*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C

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Datasheet

SCS210AGHR

Electrical characteristics (Tj = 25°C)

Values

Typ.

Parameter

Symbol

V_DC

Conditions

I_R=0.2mA

Unit

Min.

Max.

DC blocking voltage

600

I_F=10A,Tj=25°C

1.35

1.55

1.63

1.55

V_F

I_F=10A,Tj=150°C

I_F=10A,Tj=175°C

V_R=600V,Tj=25°C

V_R=600V,Tj=150°C

V_R=600V,Tj=175°C

V_R=1V,f=1MHz

Forward voltage

200

A

I_R

Reverse current

365

Total capacitance

V_R=600V,f=1MHz

V_R=400V,di/dt=350A/s

Total capacitive charge

Switching time

Thermal characteristics

Values

Typ.

1.6

Parameter

Symbol

R_th(j-c)

Conditions

Unit

Min.

Max.

1.9

Thermal resistance

°C/W

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Datasheet

SCS210AGHR

Electrical characteristic curves

Fig.2 V_F- I_FCharacteristics

Fig.1 V_F- I_FCharacteristics

100

Ta= 25ºC

Pulsed

Ta=25ºC

Ta=175ºC

Ta=125ºC

Ta=25ºC

Ta=75ºC

Ta=125ºC

Ta=75ºC

0.1

0.01

Ta= 25ºC

ꢀ₂

0.001

0.0

0.5

1.0

1.5

2.0

2.5

0.0

0.5

1.0

1.5

2.0

2.5

Forward Voltage : V_F[V]

Fig.3 V_R- I_RCharacteristics

Fig.4 V_R-Ct Characteristics

100

1,000

Ta=175ºC

Ta=125ºC

Ta=75ºC

Ta=25ºC

100

0.1

0.01

0.001

Ta=25ºC

f=1MHz

Ta= 25ºC

400 600

0.01

0.1

100

1000

200

Reverse Voltage : V_R[V]

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2017.06 - Rev.C

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Datasheet

SCS210AGHR

Electrical characteristic curves

Fig.5 Thermal Resistance vs. Pulse Width

Fig.6 Power Dissipation

Ta=25ºC

Single Pulse

0.1

0.01

0.0001 0.001 0.01 0.1

100 1000

75 100 125 150 175

Pulse Width : Pw [s]

Case Temperature : Tc [ºC]

Fig.7 Derating Curve Ip-Tc

Fig.8 Io-Pf Characteristics

Duty=0.1

Duty=0.2

Duty=0.5

Duty=0.1

D.C.

Duty=0.2

Duty=0.5

Duty=0.8

D.C.

75 100 125 150 175

Case Temperature : Tc [ºC]

Average Rectified Forward Current : Io [A]

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

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3) Although ROHM is continuously working to improve product reliability and quality, semicon-

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Therefore, in order to prevent personal injury or fire arising from failure, please take safety

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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

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Notice – WE

Rev.001

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