SCT2080KE [ROHM]
基于SiC的平面型MOSFET。（SiC-SBD非一体型） 其特征是高耐压、低导通电阻、高速开关。;
| 型号： | SCT2080KE |
| 厂家： | 
ROHM |
| 描述： | 基于SiC的平面型MOSFET。（SiC-SBD非一体型） 其特征是高耐压、低导通电阻、高速开关。 开关 |
| 文件： | 总14页 (文件大小：1076K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SCT2080KE
N-channel SiC power MOSFET
Datasheet
lOutline
TO-247N
VDSS
RDS(on) (Typ.)
ID
1200V
80mΩ
40A
lFeatures
lInner circuit
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
(1) Gate
(2) Drain
(3) Source
* Body Diode
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
TO-247N
Package
Packing
Tube
lApplication
Reel size (mm)
-
・Solar inverters
・DC/DC converters
・Induction heating
・Motor drives
Tape width (mm)
Type
-
30
Basic ordering unit (pcs)
Packing code
Marking
C11
SCT2080KE
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VDSS
Value
1200
Unit
V
Drain - Source voltage
*1
Tc = 25°C
Tc = 100°C
40
A
ID
Continuous drain current
*1
28
A
ID
*2
Pulsed drain current
80
A
ID,pulse
VGSS
Gate - Source voltage (DC)
V
-6 to +22
-10 to +26
262
*3
Gate - Source surge voltage (ｔsurge ˂ 300nsec)
V
VGSS_surge
TC=25°C, See Fig.1
Total power dissipation
W
W
°C
°C
PD
TC=100°C, See Fig.1
130
Tj
Junction temperature
175
Tstg
Range of storage temperature
-55 to +175
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TSQ50211-SCT2080KE
29.Mar.2021 - Rev.001
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Datasheet
lElectrical characteristics (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
-
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 1200V, VGS = 0V
1200
-
Zero gate voltage
drain current
IDSS
Tj = 25°C
-
1
2
10
-
μA
Tj = 150°C
-
-
VGS = +22V, VDS = 0V
VGS = -6V, VDS = 0V
IGSS+
IGSS-
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
-
100
-100
4.0
nA
nA
V
-
-
VGS (th) VDS = VGS, ID = 4.4mA
1.6
2.8
lThermal resistance
Values
Typ.
Parameter
Symbol
RthJC
Unit
Min.
-
Max.
0.57
Thermal resistance, junction - case
0.44
°C/W
lTypical Transient Thermal Characteristics
Symbol
Rth1
Value
Unit
Symbol
Cth1
Value
Unit
7.80E-02
1.97E-01
1.62E-01
5.00E-03
1.80E-02
2.49E-01
Rth2
Cth2
K/W
Ws/K
Rth3
Cth3
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TSQ50211-SCT2080KE
29.Mar.2021 - Rev.001
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SCT2080KE
Datasheet
lElectrical characteristics (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
VGS = 18V, ID = 10A
Tj = 25°C
Static drain - source
on - state resistance
*4
-
-
-
-
-
-
-
80
125
6.3
3.7
2080
77
117
mΩ
RDS(on)
Tj = 125°C
-
-
-
-
-
-
RG
Gate input resistance
Transconductance
f = 1MHz, open drain
VDS = 10V, ID = 10A
VGS = 0V
Ω
*4
S
gfs
Ciss
Coss
Crss
Input capacitance
VDS = 800V
Output capacitance
Reverse transfer capacitance
pF
pF
f = 1MHz
16
VGS = 0V
VDS = 0V to 500V
Effective output capacitance,
energy related
Co(er)
-
116
-
*4
VDD = 400V, VGS = 18V
ID = 10A
Turn - on delay time
Rise time
-
-
-
-
35
36
76
22
-
-
-
-
td(on)
*4
tr
ns
*4
RL = 40Ω
Turn - off delay time
Fall time
td(off)
*4
RG = 0Ω
tf
VDD = 600V, ID=10A
VGS = 18V/0V
RG = 0Ω, L=500μH
*Eon includes diode
reverse recovery
*4
Turn - on switching loss
Turn - off switching loss
-
-
174
51
-
-
Eon
Eoff
μJ
*4
lGate Charge characteristics (Ta = 25°C)
Values
Typ.
106
27
Parameter
Symbol
Conditions
Unit
Min.
Max.
*4
VDD = 400V
ID = 10A
Total gate charge
-
-
-
-
-
-
-
-
Qg
*4
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
nC
V
Qgs
*4
VGS = 18V
31
Qgd
V(plateau) VDD = 400V, ID = 10A
9.7
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TSQ50211-SCT2080KE
29.Mar.2021 - Rev.001
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SCT2080KE
Datasheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
A
Min.
-
Max.
40
Body diode continuous,
forward current
*1
-
-
IS
Tc = 25°C
Body diode direct current,
pulsed
*2
-
80
A
ISM
*4
VGS = 0V, IS = 10A
Forward voltage
-
-
-
-
4.6
31
-
-
-
-
V
ns
nC
A
VSD
*4
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
trr
IF = 10A, VR = 400V
di/dt = 150A/μs
*4
44
Qrr
*4
2.3
Irrm
*1 Limited only by maximum temperature allowed.
*2 PW 10μs, Duty cycle 1%
*3 Example of acceptable VGS waveform
*4 Pulsed
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TSQ50211-SCT2080KE
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SCT2080KE
Datasheet
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
300
100
PW = 100us
PW = 1ms
250
200
150
100
50
10
1
Operation in this
area is limited
by RDS(ON)
PW = 10ms
PW = 100ms
ꢀ
Ta = 25ºC
Single Pulse
0.1
0
0.1
1
10
100
1000 10000
25
75
125
175
Junction Temperature : Tj [ºC]
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
1
Ta = 25ºC
Single
0.1
0.01
0.001
0.0001 0.001
0.01
0.1
1
10
Pulse Width : PW [s]
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SCT2080KE
Datasheet
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II)
VGS= 16V
VGS= 18V
VGS= 20V
40
20
18
16
14
12
10
8
VGS= 20V
VGS= 16V
VGS= 14V
35
VGS= 18V
VGS= 14V
30
25
20
15
10
5
VGS= 12V
VGS= 12V
VGS= 10V
6
VGS= 10V
4
Ta = 25ºC
Pulsed
Ta = 25ºC
Pulsed
2
0
0
0
2
4
6
8
10
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.6 Typical Output Characteristics(I)
Fig.7 Typical Output Characteristics(II)
40
20
VGS= 20V
VGS= 18V
VGS= 20V
VGS= 18V
18
16
14
12
10
8
35
30
25
20
15
10
5
VGS= 16V
VGS= 12V
VGS = 10V
VGS= 16V
VGS= 14V
VGS= 14V
VGS= 10V
VGS= 12V
6
4
Ta = 150ºC
Pulsed
Ta = 150ºC
Pulsed
2
0
0
0
2
4
6
8
10
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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SCT2080KE
Datasheet
lElectrical characteristic curves
Fig.9 Typical Transfer Characteristics (II)
Fig.8 Typical Transfer Characteristics
40
100
VDS = 10V
Pulsed
VDS = 10V
Pulsed
35
30
25
20
15
10
5
10
Ta= 150ºC
1
0.1
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0
0.01
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
Fig.11 Transconductance vs. Drain Current
vs. Junction Temperature
5
10
VDS = 10V
Pulsed
VDS = 10V
ID = 10mA
4.5
4
3.5
3
1
0.1
2.5
2
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1.5
1
0.5
0
0.01
-50
0
50
100
150
0.01
0.1
1
10
100
Junction Temperature : Tj [ºC]
Drain Current : ID [A]
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TSQ50211-SCT2080KE
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SCT2080KE
Datasheet
lElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.8
0.15
0.1
0.05
0
VGS = 18V
Pulsed
Ta = 25ºC
0.6
ID = 20A
ID = 10A
0.4
ID = 20A
0.2
ID = 10A
0
-50
0
50
100
150
6
8
10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
1
VGS = 18V
Pulsed
0.1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.01
0.1
1
10
100
Drain Current : ID [A]
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SCT2080KE
Datasheet
lElectrical characteristic curves
Fig.16 Coss Stored Energy
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
40
10000
1000
100
10
Ta = 25ºC
Ciss
30
20
10
0
Coss
Crss
Ta = 25ºC
f = 1MHz
VGS = 0V
1
0
200
400
600
800
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
Fig.18 Dynamic Input Characteristics
20
10000
Ta = 25ºC
VDD = 400V
ID = 10A
Ta = 25ºC
tf
VDD = 400V
VGS = 18V
RG = 0Ω
1000
100
10
15
10
5
Pulsed
Pulsed
td(off)
tr
td(on)
1
0
0.01
0.1
1
10
100
0
20
40
60
80
100
120
Drain Current : ID [A]
Total Gate Charge : Qg [nC]
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SCT2080KE
Datasheet
lElectrical characteristic curves
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
300
Fig.20 Typical Switching Loss
vs. Drain Current
1200
Ta = 25ºC
ID=10A
VGS = 18V/0V
RG=0Ω
1100
1000
900
800
700
600
500
400
300
200
100
0
Ta = 25ºC
VDD=600V
VGS = 18V/0V
RG=0Ω
250
L=500μH
200
L=500μH
Eon
Eon
150
100
50
Eoff
Eoff
0
0
5
10
15
20
25
30
35
0
200
400
600
800
1000
Drain - Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
500
450
400
350
300
250
200
150
100
50
Ta = 25ºC
VDD=600V
ID=10A
VGS = 18V/0V
L=500μH
Eon
Eoff
0
0
5
10
15
20
25
30
External Gate Resistance : RG [Ω]
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TSQ50211-SCT2080KE
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SCT2080KE
Datasheet
lElectrical characteristic curves
Fig.22 Body Diode Forward Current
vs. Source - Drain Voltage
100
Fig.23 Reverse Recovery Time
vs.Body Diode Forward Current
1000
100
10
Ta = 25ºC
VGS = 0V
Pulsed
di / dt = 150A / μs
VR = 400V
VGS = 0V
10
Pulsed
Ta = 150ºC
1
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.01
0
1
2
3
4
5
6
7
8
1
10
100
Source - Drain Voltage : VSD [V]
Body Diode Forward Current : IS [A]
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TSQ50211-SCT2080KE
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SCT2080KE
Datasheet
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2ꢀSwitching Waveforms
Fig.2-2 Gate Charge Waveform
Fig.3-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.3-1 Switching Energy Measurement Circuit
Eon = ID×VDS
Eoff = ID×VDS
Vsurge
Same type
device as
D.U.T.
Irr
VDS
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
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TSQ50211-SCT2080KE
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Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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R1107
S
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
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