SCT2160KE [ROHM]
基于SiC的平面型MOSFET。(SiC-SBD非一体型) 其特征是高耐压、低导通电阻、高速开关。;型号: | SCT2160KE |
厂家: | ROHM |
描述: | 基于SiC的平面型MOSFET。(SiC-SBD非一体型) 其特征是高耐压、低导通电阻、高速开关。 开关 |
文件: | 总14页 (文件大小:1061K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SCT2160KE
Datasheet
N-channel SiC power MOSFET
lOutline
TO-247N
VDSS
1200V
160mΩ
22A
RDS(on) (Typ.)
ID
(3)
(2)
PD
165W
(1)
lInner circuit
lFeatures
(1) Gate
(2) Drain
(3) Source
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
*1 Body Diode
5) Simple to drive
lPackaging specifications
TO-247N
6) Pb-free lead plating ; RoHS compliant
Package
Packing
Tube
Reel size (mm)
-
lApplication
Tape width (mm)
Type
-
30
• Solar inverters
• DC/DC converters
• Induction heating
• Motor drives
Basic ordering unit (pcs)
Packing code
Marking
C11
SCT2160KE
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VDSS
Value
1200
Unit
V
Drain - Source voltage
*1
Tc = 25°C
Continuous drain current
Tc = 100°C
22
A
ID
*1
16
A
ID
*2
Pulsed drain current
55
A
ID,pulse
VGSS
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge ˂ 300nsec)
Power dissipation (Tc = 25°C)
Junction temperature
-6 to 22
-10 to 26
165
V
*3
V
VGSS-surge
PD
Tj
W
°C
°C
175
Tstg
Range of storage temperature
-55 to +175
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Datasheet
SCT2160KE
lElectrical characteristics (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 1200V, VGS = 0V
1200
-
-
V
Zero gate voltage
drain current
IDSS
Tj = 25°C
-
1
2
10
-
μA
Tj = 150°C
-
-
IGSS+
IGSS-
VGS = +22V, VDS = 0V
VGS = -6V, VDS = 0V
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
-
100
-100
4.0
nA
nA
V
-
-
VGS (th) VDS = VGS, ID = 2.5mA
1.6
2.8
lThermal resistance
Values
Parameter
Symbol
RthJC
Unit
Min.
Typ.
Max.
0.91
50
Thermal resistance, junction - case
-
-
-
0.70
°C/W
°C/W
°C
RthJA
Tsold
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
-
-
265
lTypical Transient Thermal Characteristics
Symbol
Rth1
Value
Unit
Symbol
Value
Unit
Cth1
Cth2
Cth3
9.61E-02
4.04E-01
1.96E-01
1.55E-03
5.23E-03
8.33E-02
Rth2
K/W
Ws/K
Rth3
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Datasheet
SCT2160KE
lElectrical characteristics (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
VGS = 18V, ID = 7A
Tj = 25°C
Static drain - source
on - state resistance
*4
-
-
-
-
-
-
-
160
226
13.7
2.4
208
mΩ
RDS(on)
Tj = 125°C
-
-
-
-
-
-
RG
Gate input resistance
Transconductance
f = 1MHz, open drain
VDS = 10V, ID = 7A
VGS = 0V
Ω
*4
S
gfs
Ciss
Coss
Crss
Input capacitance
1200
45
VDS = 800V
Output capacitance
Reverse transfer capacitance
pF
pF
f = 1MHz
7
VGS = 0V
VDS = 0V to 500V
Effective output capacitance,
energy related
Co(er)
-
71
-
*4
VDD = 400V, ID = 7A
VGS = 18V/0V
RL = 57Ω
Turn - on delay time
Rise time
-
-
-
-
23
25
67
27
-
-
-
-
td(on)
*4
tr
ns
*4
Turn - off delay time
Fall time
td(off)
*4
RG = 0Ω
tf
VDD = 600V, ID=7A
VGS = 18V/0V
RG = 0Ω, L=500μH
*Eon includes diode
reverse recovery
*4
Turn - on switching loss
Turn - off switching loss
-
-
126
55
-
-
Eon
μJ
*4
Eoff
lGate Charge characteristics (Ta = 25°C)
Values
Typ.
62
Parameter
Symbol
Conditions
Unit
Min.
Max.
*4
VDD = 400V
ID = 7A
Total gate charge
-
-
-
-
-
-
-
-
Qg
*4
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
14
nC
V
Qgs
*4
VGS = 18V
20
Qgd
V(plateau) VDD = 400V, ID = 7A
9.6
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Datasheet
SCT2160KE
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
-
Max.
Inverse diode continuous,
forward current
*1
-
-
22
55
A
A
IS
Tc = 25°C
Inverse diode direct current,
pulsed
*2
-
ISM
*4
VGS = 0V, IS = 7A
Forward voltage
-
-
-
-
4.1
26
-
-
-
-
V
ns
nC
A
VSD
*4
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
trr
IF = 7A, VR = 400V
di/dt = 160A/μs
*4
39
Qrr
*4
3.0
Irrm
*1 Limited only by maximum temperature allowed.
*2 PW 10μs, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
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Datasheet
SCT2160KE
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
180
160
140
120
100
80
100
PW = 100ms
PW = 1ms
PW = 10ms
PW = 100ms
10
1
60
Operation in this area
is limited by RDS(on)
40
Ta=25ºC
Single Pulse
20
0.1
0
0.1
1
10
100
1000 10000
25
75
125
175
Case Temperature : TC [ºC]
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
1
0.1
0.01
Ta=25ºC
Single Pulse
0.1
Pulse Width : PW [s]
0.001
0.0001 0.001
0.01
1
10
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Datasheet
SCT2160KE
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II)
20
10
20V
Ta=25ºC
18
20V
18V
9
8
7
6
5
4
3
2
1
0
Pulsed
18V
Ta=25ºC
Pulsed
16
16V
14V
16V
12V
14
14V
12V
12
10V
10
8
6
10V
4
VGS= 8V
2
VGS= 8V
0
0
1
2
3
4
5
0
2
4
6
8
10
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.6 Tj = 150ºC Typical Output
Characteristics(I)
Fig.7 Tj = 150ºC Typical Output
Characteristics(II)
20
10
20V
18V
20V
18V
16V
14V
12V
18
16
14
12
10
8
9
8
7
6
5
4
3
2
1
0
10V
16V
14V
12V
10V
VGS= 8V
VGS= 8V
6
4
Ta=150ºC
Pulsed
Ta=150ºC
Pulsed
2
0
0
2
4
6
8
10
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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Datasheet
SCT2160KE
lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics (I)
Fig.9 Typical Transfer Characteristics (II)
10
20
18
16
14
12
10
8
VDS= 10V
Plused
VDS= 10V
Plused
1
Ta=150ºC
Ta=75ºC
Ta=25ºC
0.1
Ta= -25ºC
Ta=150ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
6
0.01
4
2
0.001
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Fig.11 Transconductance vs. Drain Current
5
10
VDS = 10V
ID = 3mA
VDS= 10V
Plused
4.5
4
3.5
3
1
2.5
2
0.1
Ta=150ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1.5
1
0.5
0
0.01
0.01
0.1
1
10
-50
0
50
100
150
200
Junction Temperature : Tj [ºC]
Drain Current : ID [A]
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Datasheet
SCT2160KE
lElectrical characteristic curves
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.4
0.35
0.3
0.6
VGS= 18V
Plused
Ta=25ºC
Pulsed
0.5
0.4
0.3
0.2
0.1
0
0.25
0.2
ID = 15A
ID = 15A
0.15
0.1
ID = 7A
ID = 7A
0.05
0
-50
0
50
100
150
200
6
8
10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
1
VGS= 18V
Plused
Ta=150ºC
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.1
1
10
100
Drain Current : ID [A]
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Datasheet
SCT2160KE
lElectrical characteristic curves
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
Fig.16 COSS Stored Energy
20
10000
1000
100
Ta=25ºC
18
16
14
12
10
8
Ciss
Coss
6
10
4
Ta=25ºC
f = 1MHz
VGS = 0V
Crss
2
1
0
0.1
1
10
100
1000
0
200
400
600
800
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.18 Dynamic Input Characteristics
Fig.17 Switching Characteristics
10000
20
Ta = 25ºC
VDD= 400V
ID= 7A
Ta = 25ºC
VDD = 400V
VGS = 18V
RG= 0Ω
tf
Pulsed
1000
100
10
15
td(off)
Pulsed
10
5
td(on)
tr
1
0
0.1
1
10
100
0
10
20
30
40
50
60
70
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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Datasheet
SCT2160KE
lElectrical characteristic curves
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
Fig.20 Typical Switching Loss
vs. Drain Current
250
800
Ta = 25ºC
VDD= 600V
VGS = 18V/0V
RG= 0Ω
Ta = 25ºC
ID= 7A
VGS = 18V/0V
RG= 0Ω
L=500μH
700
600
500
400
300
200
100
0
200
150
100
50
Eon
L=500μH
Eon
Eoff
Eoff
0
0
200
400
600
800
1000
0
5
10
15
20
25
Drain - Source Voltage : VDS [V]
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
350
300
250
200
150
100
50
Ta = 25ºC
VDD= 600V
ID= 7A
VGS = 18V/0V
L=500μH
Eon
Eoff
0
0
5
10
15
20
25
30
External Gate Resistance : RG [W]
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Datasheet
SCT2160KE
lElectrical characteristic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
100
1000
100
10
Ta=25ºC
VGS=0V
Pulsed
di / dt = 160A / μs
VR = 400V
VGS = 0V
10
Pulsed
1
Ta=150ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.01
0
1
2
3
4
5
6
7
8
1
10
100
Source - Drain Voltage : VSD [V]
Inverse Diode Forward Current : IS [A]
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Datasheet
SCT2160KE
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2ꢀSwitching Waveforms
Fig.2-2 Gate Charge Waveform
Fig.3-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.3-1 Switching Energy Measurement Circuit
Eon = ID×VDS
Eoff = ID×VDS
Vsurge
Same type
device as
D.U.T.
Irr
VDS
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
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Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2012 ROHM Co., Ltd. All rights reserved.
R1107
S
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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