SCT2450KE [ROHM]

基于SiC的平面型MOSFET。（SiC-SBD非一体型）其特征是高耐压、低导通电阻、高速开关。;


型号：	SCT2450KE
厂家：	ROHM
描述：	基于SiC的平面型MOSFET。（SiC-SBD非一体型）其特征是高耐压、低导通电阻、高速开关。开关
文件：	总14页 (文件大小：971K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SCT2450KE

Datasheet

N-channel SiC power MOSFET

lOutline

TO-247N

V_DSS

1200V

450mΩ

10A

R_DS(on)(Typ.)

I_D

(3)

(2)

P_D

85W

(1)

lInner circuit

lFeatures

(1) Gate

(2) Drain

(3) Source

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

*1 Body Diode

5) Simple to drive

lPackaging specifications

TO-247N

6) Pb-free lead plating ; RoHS compliant

Package

Packing

Tube

Reel size (mm)

lApplication

Tape width (mm)

Type

• Solar inverters

• DC/DC converters

• Induction heating

• Motor drives

Basic ordering unit (pcs)

Packing code

Marking

C11

SCT2450KE

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

V_DSS

Value

1200

Unit

Drain - Source voltage

T_c= 25°C

Continuous drain current

T_c= 100°C

I_D

Pulsed drain current

I_D,pulse

V_GSS

Gate - Source voltage (DC)

Gate - Source surge voltage (T_surge˂ 300nsec)

Power dissipation (T_c= 25°C)

Junction temperature

-6 to 22

-10 to 26

V_GSS-surge

P_D

T_j

°C

175

T_stg

Range of storage temperature

-55 to +175

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Datasheet

SCT2450KE

lElectrical characteristics (T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

Drain - Source breakdown

voltage

V_(BR)DSSV_GS= 0V, I_D= 1mA

V_DS= 1200V, V_GS= 0V

1200

Zero gate voltage

drain current

I_DSS

T_j= 25°C

μA

T_j= 150°C

I_GSS+

I_GSS-

V_GS= +22V, V_DS= 0V

V_GS= -6V, V_DS= 0V

Gate - Source leakage current

Gate threshold voltage

100

-100

4.0

V_{GS (th)}V_DS= V_GS, I_D= 0.9mA

1.6

2.8

lThermal resistance

Values

Parameter

Symbol

R_thJC

Unit

Min.

Typ.

Max.

1.77

Thermal resistance, junction - case

1.36

°C/W

°C

R_thJA

T_sold

Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

265

lTypical Transient Thermal Characteristics

Symbol

R_th1

Value

Unit

Symbol

Value

Unit

C_th1

C_th2

C_th3

2.30E-01

6.87E-01

4.41E-01

2.19E-04

1.29E-03

1.31E-02

R_th2

K/W

Ws/K

R_th3

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SCT2450KE

lElectrical characteristics (T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

V_GS= 18V, I_D= 3A

T_j= 25°C

Static drain - source

on - state resistance

450

610

585

mΩ

R_DS(on)

T_j= 125°C

R_G

Gate input resistance

Transconductance

f = 1MHz, open drain

V_DS= 10V, I_D= 3A

V_GS= 0V

1.0

463

g_fs

C_iss

C_oss

C_rss

Input capacitance

V_DS= 800V

Output capacitance

Reverse transfer capacitance

f = 1MHz

V_GS= 0V

V_DS= 0V to 500V

Effective output capacitance,

energy related

C_o(er)

V_DD= 400V, V_GS= 18V

I_D= 3A

Turn - on delay time

Rise time

t_d(on)

t_r

R_L= 133Ω

Turn - off delay time

Fall time

t_d(off)

R_G= 0Ω

t_f

V_DD= 600V, I_D=3A

V_GS= 18V/0V

R_G= 0Ω, L=500μH

*E_onincludes diode

reverse recovery

Turn - on switching loss

Turn - off switching loss

E_on

μJ

E_off

lGate Charge characteristics (T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

V_DD= 400V

I_D= 3A

Total gate charge

Q_g

Gate - Source charge

Gate - Drain charge

Gate plateau voltage

Q_gs

V_GS= 18V

Q_gd

V_(plateau)V_DD= 400V, I_D= 3A

10.5

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lBody diode electrical characteristics (Source-Drain) (T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

Inverse diode continuous,

forward current

I_S

T_c= 25°C

Inverse diode direct current,

pulsed

I_SM

*45

V_GS= 0V, I_S= 3A

Forward voltage

4.3

V_SD

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

t_rr

I_F= 3A, V_R= 400V

di/dt = 110A/μs

Q_rr

1.4

I_rrm

*1 Limited only by maximum temperature allowed.

*2 PW  10μs, Duty cycle  1%

*3 Example of acceptable V_GSwaveform

*4 Pulsed

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lElectrical characteristic curves

Fig.1 Power Dissipation Derating Curve

Fig.2 Maximum Safe Operating Area

100

P_W= 100ms

P_W= 1ms

P_W= 10ms

P_W= 100ms

Operation in this area

is limited by R_DS(on)

0.1

0.01

T_a=25ºC

Single Pulse

125

175

0.1

100

1000 10000

Case Temperature : T_C[ºC]

Drain - Source Voltage : V_DS[V]

Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width

T_a=25ºC

Single Pulse

0.1

0.01

0.0001 0.001

0.01

0.1

Pulse Width : P_W[s]

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lElectrical characteristic curves

Fig.4 Typical Output Characteristics(I)

Fig.5 Typical Output Characteristics(II)

14V

20V

18V

16V

18V

16V

14V

T_a=25ºC

12V

10V

Pulsed

12V

V_GS= 8V

10V

T_a=25ºC

Pulsed

V_GS= 8V

8 10

Drain - Source Voltage : V_DS[V]

Fig.6 T_j= 150ºC Typical Output

Characteristics(I)

Fig.7 T_j= 150ºC Typical Output

Characteristics(II)

20V

18V

T_a=150ºC

Pulsed

20V

18V

16V

12V

10V

16V

14V

12V

10V

V_GS= 8V

T_a=150ºC

Pulsed

Drain - Source Voltage : V_DS[V]

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lElectrical characteristic curves

Fig.8 Typical Transfer Characteristics (I)

Fig.9 Typical Transfer Characteristics (II)

V_DS= 10V

Plused

V_DS= 10V

Plused

T_a=150ºC

T_a=75ºC

T_a=25ºC

T_a= -25ºC

0.1

T_a=150ºC

T_a=75ºC

T_a=25ºC

T_a= -25ºC

0.01

0.001

10 12 14 16 18 20

Gate - Source Voltage : V_GS[V]

Fig.10 Gate Threshold Voltage

Fig.11 Transconductance vs. Drain Current

vs. Junction Temperature

V_DS= 10V

I_D= 1mA

V_DS= 10V

Plused

4.5

3.5

2.5

0.1

1.5

T_a=150ºC

T_a=75ºC

T_a=25ºC

T_a= -25ºC

0.5

0.01

-50

100

150

200

0.01

0.1

Junction Temperature : T_j[ºC]

Drain Current : I_D[A]

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lElectrical characteristic curves

Fig.12 Static Drain - Source On - State

Fig.13 Static Drain - Source On - State

Resistance vs. Gate Source Voltage

Resistance vs. Junction Temperature

1.4

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

T_a=25ºC

Pulsed

V_GS= 18V

Plused

1.2

I_D= 6A

0.8

I_D= 3A

0.6

I_D= 3A

0.4

0.2

-50

100

150

200

10 12 14 16 18 20 22

Gate - Source Voltage : V_GS[V]

Junction Temperature : T_j[ºC]

Fig.14 Static Drain - Source On - State

Resistance vs. Drain Current

V_GS= 18V

Plused

T_a=150ºC

T_a=125ºC

T_a=75ºC

T_a=25ºC

T_a= -25ºC

0.1

100

Drain Current : I_D[A]

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lElectrical characteristic curves

Fig.15 Typical Capacitance

Fig.16 C_OSSStored Energy

vs. Drain - Source Voltage

10000

T_a=25ºC

1000

100

C_iss

C_oss

C_rss

T_a=25ºC

f = 1MHz

V_GS= 0V

200

400

600

800

0.1

100

1000

Drain - Source Voltage : V_DS[V]

Fig.18 Dynamic Input Characteristics

Fig.17 Switching Characteristics

10000

T_a= 25ºC

V_DD= 400V

I_D= 3A

V_DD= 400V

V_GS= 18V

R_G= 0Ω

t_f

Pulsed

1000

100

Pulsed

t_d(off)

t_d(on)

t_r

0.1

100

Total Gate Charge : Q_g[nC]

Drain Current : I_D[A]

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lElectrical characteristic curves

Fig.19 Typical Switching Loss

Fig.20 Typical Switching Loss

vs. Drain Current

300

vs. Drain - Source Voltage

100

T_a= 25ºC

I_D= 3A

V_GS= 18V/0V

R_G= 0Ω

T_a= 25ºC

V_DD= 600V

V_GS= 18V/0V

R_G= 0Ω

250

200

150

100

L=500mH

L=500μH

E_on

E_off

200

400

600

800

1000

Drain - Source Voltage : V_DS[V]

Drain Current : I_D[A]

Fig.21 Typical Switching Loss

vs. External Gate Resistance

120

110

100

T_a= 25ºC

V_DD= 600V

I_D= 3A

V_GS= 18V/0V

L=500μH

E_on

E_off

External Gate Resistance : R_G[Ω]

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lElectrical characteristic curves

Fig.22 Inverse Diode Forward Current

Fig.23 Reverse Recovery Time

vs.Inverse Diode Forward Current

vs. Source - Drain Voltage

1000

100

T_a=25ºC

V_GS=0V

Pulsed

di / dt = 110A / μs

V_R= 400V

V_GS= 0V

Pulsed

T_a=150ºC

T_a=75ºC

T_a=25ºC

T_a= -25ºC

0.1

0.01

Source - Drain Voltage : V_SD[V]

Inverse Diode Forward Current : I_S[A]

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lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2ꢀSwitching Waveforms

Fig.2-2 Gate Charge Waveform

Fig.3-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit

Fig.3-1 Switching Energy Measurement Circuit

E_on= I_D×V_DS

E_off= I_D×V_DS

V_surge

Same type

device as

D.U.T.

I_rr

V_DS

D.U.T.

I_D

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

D.U.T.

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

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shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

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such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

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R1107

Daattaasshheeeett

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1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s

representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or

liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

Notice – WE

Rev.001

SCT2450KE [ROHM]

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