SCT2750NY_技术文档

SCT2750NY

Datasheet

N-channel SiC power MOSFET

Outline

TO-268-2L

(2)

V_DSS

1700V

750m

6A

R_DS(on)(Typ.)

I_D

P_D

57W

(1)

(3)

Features

Inner circuit

(2)

1) Low on-resistance

(1) Gate

(2) Drain

(3) Source

2) Fast switching speed

*1

3) Long creepage distance with no center lead

4) Simple to drive

(1)

*1 Body Diode

5) Pb-free lead plating ; RoHS compliant

(3)

Packaging specifications

Embossed tape

Packing

Reel size (mm)

330

24

Application

Tape width (mm)

Type

・Auxilialy power supplies

・Switch mode power supplies

Basic ordering unit (pcs)

400

Taping code

Marking

TB

SCT2750NY

Absolute maximum ratings (T_a= 25°C)

Parameter

Symbol

V_DSS

Value

1700

Unit

V

Drain - Source voltage

*1

T_c= 25°C

Continuous drain current

T_c= 100°C

5.9

A

I_D

*1

4

A

I_D

*2

Pulsed drain current

14

A

I_D,pulse

V_GSS

Gate - Source voltage (DC)

Gate - Source surge voltage (t_surge<300nsec)

Power dissipation (T_c= 25C)

Junction temperature

V

6 to 22

10 to 26

57

*3

V

V_{GSS_surge}

P_D

T_j

W

°C

175

T_stg

Range of storage temperature

55 to 175

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2017.07 - Rev.B

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Datasheet

SCT2750NY

Thermal resistance

Values

Typ.

Parameter

Symbol

R_thJC

Unit

Min.

-

Max.

2.65

Thermal resistance, junction - case

2.04

°C/W

Electrical characteristics (T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

V

Min.

Max.

-

Drain - Source breakdown

voltage

V_(BR)DSSV_GS= 0V, I_D= 1mA

V_DS= 1700V, V_GS= 0V

1700

-

Zero gate voltage

drain current

I_DSS

T_j= 25°C

-

0.1

0.2

-

10

-

A

T_j= 150°C

-

I_GSS+

I_GSS-

V_GS= 22V, V_DS= 0V

V_GS= 6V, V_DS= 0V

Gate - Source leakage current

Gate threshold voltage

100

-100

4.0

nA

V

-

V_{GS (th)}V_DS= V_GS, I_D= 0.63mA

1.6

2.8

*1 Limited only by maximum temperature allowed.

*2 PW  10s, Duty cycle  1%

*3 Example of acceptable Vgs waveform

*4 Pulsed

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2017.07 - Rev.B

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Datasheet

SCT2750NY

Electrical characteristics (T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

V_GS= 18V, I_D= 1.7A

T_j= 25°C

Static drain - source

on - state resistance

*4

-

750

1088

49

975

R_DS(on)

m

T_j= 125°C

-

R_G

Gate input resistance

Transconductance

f = 1MHz, open drain

V_DS= 10V, I_D= 1.7A

V_GS= 0V



*4

0.6

275

19

S

g_fs

C_iss

C_oss

C_rss

Input capacitance

V_DS= 800V

Output capacitance

Reverse transfer capacitance

pF

f = 1MHz

7

V_GS= 0V

V_DS= 0V to 800V

Effective output capacitance,

energy related

C_o(er)

-

21

-

*4

V_DD= 500V, I_D= 1.7A

V_GS= 18V/0V

R_L= 294

Turn - on delay time

Rise time

-

19

24

41

63

-

t_d(on)

*4

t_r

ns

µJ

*4

Turn - off delay time

Fall time

t_d(off)

*4

R_G= 0

t_f

V_DD= 800V, I_D=1.7A

V_GS= 18V/0V

*4

Turn - on switching loss

Turn - off switching loss

-

76

33

-

E_on

R_G= 0, L=2mH

*E_onincludes diode

reverse recovery

*4

E_off

Gate Charge characteristics (T_a= 25°C)

Values

Typ.

17

Parameter

Symbol

Conditions

Unit

Min.

Max.

*4

V_DD= 500V

I_D= 1.5A

Total gate charge

-

Q_g

*4

Gate - Source charge

Gate - Drain charge

Gate plateau voltage

5

nC

V

Q_gs

*4

V_GS= 18V

6.5

Q_gd

V_(plateau)V_DD= 500V, I_D= 1.5A

11.0

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2017.07 - Rev.B

3/12

Datasheet

SCT2750NY

Body diode electrical characteristics (Source-Drain) (T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

A

Min.

-

Max.

5.9

Inverse diode continuous,

forward current

*1

-

I_S

T_c= 25°C

Inverse diode direct current,

pulsed

*2

-

14

A

I_SM

*4

V_GS= 0V, I_S= 1.7A

Forward voltage

-

4.3

26

-

V

ns

nC

A

V_SD

*4

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

t_rr

I_F= 1.7A, V_R= 800V

*4

18

Q_rr

di/dt = 290A/s

*4

1.3

I_rrm

Typical Transient Thermal Characteristics

Symbol

R_th1

Value

243m

1529m

268m

Unit

Symbol

C_th1

Value

Unit

352µ

1.57m

68.7m

R_th2

C_th2

K/W

Ws/K

R_th3

C_th3

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2017.07 - Rev.B

4/12

Datasheet

SCT2750NY

Electrical characteristic curves

Fig.1 Power Dissipation Derating Curve

Fig.2 Maximum Safe Operating Area

100

60

Operation in this

area is limited

by R_DS(on)

P_W= 100s

50

40

30

20

10

0

10

P_W= 1ms

P_W= 10ms

1

0.1

0.01

P_W= 100ms

T_a= 25ºC

Single Pulse

0

50

100

150

200

0.1

1

10

100

1000 10000

Junction Temperature : T_j[°C]

Drain - Source Voltage : V_DS[V]

Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width

10

1

T_a= 25ºC

Single Pulse

0.1

0.0001 0.001

0.01

0.1

1

10

Pulse Width : P_W[s]

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2017.07 - Rev.B

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Datasheet

SCT2750NY

Electrical characteristic curves

Fig.4 Typical Output Characteristics(I)

Fig.5 Typical Output Characteristics(II)

6

3

2.5

2

18V

20V

18V

20V

16V

5

14V

16V

14V

4

12V

3

1.5

1

12V

V_GS= 10V

T_a= 25ºC

2

Pulsed

T_a= 25ºC

Pulsed

V_GS= 10V

1

0

0.5

0

8V

8 10

0

2

4

6

0

1

2

3

4

5

Drain - Source Voltage : V_DS[V]

Fig.6 T_j= 150°C Typical Output

Fig.7 T_j= 150°C Typical Output

Characteristics(I)

Characteristics(II)

3

6

12V

14V

16V

14V

3

2

1

0

5

16V

18V

20V

4

3

2

1

0

20V

12V

V_GS= 10V

8V

V_GS= 10V

8V

T_a= 150ºC

Pulsed

T_a= 150ºC

Pulsed

0

1

2

3

4

5

0

2

4

6

8

10

Drain - Source Voltage : V_DS[V]

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2017.07 - Rev.B

6/12

Datasheet

SCT2750NY

Electrical characteristic curves

Fig.8 Typical Transfer Characteristics (I)

Fig.9 Typical Transfer Characteristics (II)

3.5

3

10

V_DS= 10V

Pulsed

V_DS= 10V

Pulsed

1

2.5

2

T_a= 175ºC

T_a= 125ºC

T_a= 75ºC

T_a= 25ºC

T_a= 25ºC

0.1

0.01

T_a= 125ºC

T_a= 75ºC

T_a= 25ºC

T_a= 25ºC

1.5

1

0.5

0

0.001

0

2

4

6

8

10 12 14 16 18 20

0

2

4

6

8

10 12 14 16 18 20

Gate - Source Voltage : V_GS[V]

Fig.10 Gate Threshold Voltage

vs. Junction Temperature

Fig.11 Transconductance vs. Drain Current

5

1

V_DS= 10V

Pulsed

V_GS= V_DS

I_D= 0.63mA

4.5

4

3.5

3

2.5

2

0.1

T_a= 175ºC

T_a= 125ºC

T_a= 75ºC

T_a= 25ºC

T_a= 25ºC

1.5

1

0.5

0

0.01

-50

0

50

100

150

200

0.01

0.1

1

10

Junction Temperature : T_j[°C]

Drain Current : I_D[A]

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2017.07 - Rev.B

7/12

Datasheet

SCT2750NY

Electrical characteristic curves

Fig.12 Static Drain - Source On - State

Resistance vs. Gate Source Voltage

Fig.13 Static Drain - Source On - State

Resistance vs. Junction Temperature

2

1.5

1

T_a= 25ºC

Pulsed

V_GS= 18V

Pulsed

1.8

1.6

1.4

1.2

I_D= 3.4A

1

0.8

I_D= 1.7A

0.6

0.4

0.2

0

0.5

0

8

10

12

14

16

18

20

22

-50

0

50

100

150

200

Gate - Source Voltage : V_GS[V]

Junction Temperature : T_j[ºC]

Fig.14 Static Drain - Source On - State

Resistance vs. Drain Current

10

1

T_a= 175ºC

T_a= 125ºC

T_a= 75ºC

T_a= 25ºC

T_a= 25ºC

V_GS= 18V

Pulsed

0.1

1

10

Drain Current : I_D[A]

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2017.07 - Rev.B

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Datasheet

SCT2750NY

Electrical characteristic curves

Fig.15 Typical Capacitance

vs. Drain - Source Voltage

Fig.16 Coss Stored Energy

9

1000

T_a= 25ºC

8

C_iss

7

6

5

4

3

2

1

0

100

C_oss

10

1

C_rss

T_a= 25ºC

f = 1MHz

V_GS= 0V

0

200

400

600

800

1000

0.1

1

10

100

1000

Drain - Source Voltage : V_DS[V]

Fig.18 Dynamic Input Characteristics

Fig.17 Switching Characteristics

1000

20

T_a= 25ºC

V_DD= 500V

I_D= 1.5A

V_DD= 500V

V_GS= 18V

R_G= 0Ω

t_f

15

10

5

Pulsed

100

t_d(off)

t_r

t_d(on)

10

0

0.1

1

10

0

2

4

6

8

10 12 14 16 18 20

Total Gate Charge : Q_g[nC]

Drain Current : I_D[A]

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2017.07 - Rev.B

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Datasheet

SCT2750NY

Electrical characteristic curves

Fig.19 Typical Switching Loss

vs. Drain - Source Voltage

Fig.20 Typical Switching Loss

vs. Drain Current

120

400

T_a= 25ºC

V_DD=800V

V_GS= 18V/0V

R_G= 0Ω

T_a= 25ºC

I_D=1.7A

V_GS= 18V/0V

R_G= 0Ω

110

100

90

80

70

60

50

40

30

20

10

0

350

300

250

200

150

100

50

E_on

L=2mH

E_on

E_off

0

400

600

800

1000

1200

0

1

2

3

4

5

6

7

8

Drain - Source Voltage : V_DS[V]

Drain Current : I_D[A]

Fig.21 Typical Switching Loss

vs. External Gate Resistance

200

150

100

50

T_a= 25ºC

V_DD=800V

I_D=1.7A

V_GS= 18V/0V

L=2mH

E_on

E_off

0

10 20 30 40 50 60 70 80 90 100

External Gate Resistance : R_G[]

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2017.07 - Rev.B

10/12

Datasheet

SCT2750NY

Electrical characteristic curves

Fig.22 Inverse Diode Forward Current

Fig.23 Reverse Recovery Time

vs.Inverse Diode Forward Current

vs. Source - Drain Voltage

10

1000

100

10

V_GS= 0V

Pulsed

T_a= 25ºC

di / dt = 290A / µs

V_R= 800V

V_GS= 0V

1

Pulsed

0.1

T_a= 175ºC

T_a= 125ºC

T_a= 75ºC

T_a= 25ºC

T_a= 25ºC

0.01

0

1

2

3

4

5

6

7

8

1

10

Source - Drain Voltage : V_SD[V]

Inverse Diode Forward Current : I_S[A]

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2017.07 - Rev.B

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Datasheet

SCT2750NY

Measurement circuits

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2ꢀSwitching Waveforms

Pulse width

V

GS

ID

VDS

90%

50%

R

L

50%

10%

90%

V

GS

DS

D.U.T.

V

10%

90%

V

DD

RG

t

d(on)

td(off)

t

r

tf

t

on

toff

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

V

G

V

GS

I

D

VDS

Q

g

RL

V

GS

D.U.T.

I

G(Const.)

Qgs

Qgd

VDD

Charge

Fig.3-1 Switching Energy Measurement Circuit

Fig.3-2 Switching Waveforms

E_on= I_D×V_DS

E_off= I_D×V_DS

Same type

L

D.U.T.

device as

V_surge

I_rr

I

F

V_DS

D.U.T.

VDD

DRIVER

MOSFET

D.U.T.

R

G

I_D

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

I

F

L

D._DU_.U.T_.T._.

t

rr

I

F

0

VDD

I

rr 10%

DRIVER

MOSFET

I

rr

R

G

drr / d

t

I

rr 90%

I

rr 100%

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2017.07 - Rev.B

12/12

Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensur the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

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non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

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13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

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More detail product informations and catalogs are available, please contact us.

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R1102

S

Daattaasshheeeett

General Precaution

1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s

representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

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concerning such information.

Notice – WE

Rev.001


型号：	SCT2750NY
厂家：	ROHM
描述：	SCT2750NY是1700V 6A的Nch SiC功率MOSFET。
文件：	总14页 (文件大小：833K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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