SCT3120AL [ROHM]

SCT3120AL是650V 21A的Nch SiC功率MOSFET。;


型号：	SCT3120AL
厂家：	ROHM
描述：	SCT3120AL是650V 21A的Nch SiC功率MOSFET。
文件：	总17页 (文件大小：1359K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SCT3120AL

Datasheet

N-channel SiC power MOSFET

lOutline

TO-247N

V_DSS

650V

120mΩ

21A

R_DS(on)(Typ.)

I_D

P_D

(3)

103W

(2)

(1)

lInner circuit

lFeatures

(1) Gate

(2) Drain

(3) Source

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

*Body Diode

Please note Driver Source and Power Source are

not exchangeable. Their exchange might lead to

malfunction.

5) Simple to drive

6) Pb-free lead plating ; RoHS compliant

lPackaging specifications

Tube

Packing

lApplication

・Solar inverters

Reel size (mm)

Tape width (mm)

Basic ordering unit (pcs)

Taping code

・DC/DC converters

・Switch mode power supplies

・Induction heating

・Motor drives

Type

C11

Marking

SCT3120AL

lAbsolute maximum ratings (T_vj= 25°C unless otherwise specified)

Parameter

Drain - Source Voltage

Symbol

V_DSS

Value

650

Unit

T_c= 25°C

I_D

Continuous Drain current

T_c= 100°C

I_D

Pulsed Drain current (T_c= 25°C)

Gate - Source voltage (DC)

I_D,pulse

V_GSS

-4 to +22

-4 to +26

0 / +18

175

Gate - Source surge voltage (t_surge< 300nsec)

Recommended drive voltage

V_{GSS_surge}

V_{GS_op}

T_vj

Virtual Junction temperature

°C

T_stg

Range of storage temperature

-55 to +175

°C

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Datasheet

lElectrical characteristics (T_vj= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

V_GS= 0V, I_D= 1mA

Drain - Source breakdown

voltage

V_(BR)DSST_vj= 25°C

T_vj= -55°C

650

V_GS= 0V, V_DS

I_DSST_vj= 25°C

T_vj= 150°C

=650V

Zero Gate voltage

Drain current

μA

I_GSS+V_GS

I_GSS-V_GS

, V_DS= 0V

Gate - Source leakage current

Gate threshold voltage

+22V

-4V

100

-100

5.6

V_{GS (th)}V_DS= 10V, I =

3.33mA

6.7A

2.7

V_GS= 18V, I =

Static Drain - Source

on - state resistance

T_vj= 25°C

R_DS(on)

120

172

156

mΩ

T_vj= 150°C

R_G

Gate input resistance

f = 1MHz, open drain

lThermal resistance

Values

Typ.

Parameter

Symbol

R_thJC

Unit

K/W

Min.

Max.

1.46

Thermal resistance, junction - case

1.12

lTypical Transient Thermal Characteristics

Symbol

R_th1

Value

Unit

Symbol

Value

Unit

C_th1

C_th2

C_th3

1.11E-01

7.09E-01

3.01E-01

8.73E-04

5.10E-03

2.94E-02

R_th2

K/W

Ws/K

R_th3

R_th,n

R_th1

T_j

T_c

P_D

C_th1

C_th2

C_th,n

T_a

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Datasheet

lElectrical characteristics (T_vj= 25°C unless otherwise specified)

Values

Typ.

2.7

Parameter

Symbol

Conditions

V_DS= 10V, I =

Unit

Min.

Max.

Transconductance

6.7A

g_fs

C_issV_GS= 0V

C_ossV_DS

Input capacitance

460

Output capacitance

Reverse transfer capacitance

500V

C_rss

f = 1MHz

V_GS= 0V

Effective output capacitance,

energy related

C_o(er)

V_DS

0V to 300V

300V

6.7A

Total Gate charge

Gate - Source charge

Gate - Drain charge

Turn - on delay time

Rise time

Q_g

I_D=

Q_gs

V_GS= 18V

See Fig. 1-1.

Q_gd

V_DS

300V

6.7A

t_d(on)

I_D=

t_r

V_GS

0V/+18V

0Ω

R_G=

R_L=

Turn - off delay time

Fall time

t_d(off)

45Ω

t_f

See Fig. 1-1, 1-2.

V_DS

V_GS=0V/18V, I_D=

300V

Turn - on switching loss

Turn - off switching loss

6.7A

0Ω, L = 500μH

E_on

R_G=

μJ

E_onincludes diode

reverse recovery

L_σ= 50nH, C_σ= 200pF

See Fig. 2-1, 2-2.

E_off

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Datasheet

lBody diode electrical characteristics (Source-Drain) (T_vj= 25°C unless otherwise specified)

Values

Parameter

Symbol

Conditions

Unit

Min.

Typ.

Max.

Body diode continuous,

forward current

I_S

T_c= 25°C

Body diode direct current,

pulsed

I_SM

V_GS= 0V, I_S

Forward voltage

= 6.7A

3.2

V_SD

I_F=

6.7A

Reverse recovery time

t_rr

V_R=

300V

Reverse recovery charge

Q_rr

di/dt = 1100A/μs

L_σ= 50nH, C_σ= 200pF

See Fig. 3-1, 3-2.

Peak reverse recovery current

I_rrm

*1 Limited by maximum T_vjand for Max. R_thJC

*2 PW  10μs, Duty cycle  1%

*3 Example of acceptable V_GSwaveform

Please note especially when using driver source that V_{GSS_surge}must be in the range of

absolute maximum rating.

*4 Please be advised not to use SiC-MOSFETs with V_GSbelow 13V as doing so may cause

thermal runaway.

*5 Pulsed

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lElectrical characteristic curves

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve

120

100

Operation in this area is limited by R_DS(on)

100

PW = 1μs*

PW = 10μs*

PW = 100μs

PW = 1ms

PW = 10ms

T_c= 25ºC

Single Pulse

*Calculation(PW10μs)

0.1

125

175

0.1

100

1000

Case Temperature : T_C[°C]

Drain - Source Voltage : V_DS[V]

Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width

0.1

0.01

0.001

T_c= 25ºC

Single Pulse

0.0001

1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1

Pulse Width : PW [s]

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lElectrical characteristic curves

Fig.4 Typical Output Characteristics(I)

Fig.5 Typical Output Characteristics(II)

20V

T_vj= 25ºC

Pulsed

18V

16V

18V

T_vj= 25ºC

Pulsed

14V

16V

14V

12V

10V

V_GS= 8V

Drain - Source Voltage : V_DS[V]

Fig.6 T_vj= 25ºC 3rd Quadrant Characteristics

T_vj= 25ºC

Pulsed

-2

-4

V_GS= -4V

V_GS= -2V

V_GS= 0V

-6

V_GS= 18V

-8

-10

-12

-14

-16

-18

-20

-10

-8

-6

-4

-2

Drain - Source Voltage : V_DS[V]

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Datasheet

lElectrical characteristic curves

Fig.7 T_vj= 150ºC Typical Output

Characteristics(I)

Fig.8 T_vj= 150ºC Typical Output

Characteristics(II)

20V

14V

12V

14V

12V

10V

18V

16V

18V

16V

T_vj= 150ºC

Pulsed

10V

V_GS= 8V

T_vj= 150ºC

Pulsed

Drain - Source Voltage : V_DS[V]

Fig.9 T_vj= 150ºC 3rd Quadrant

Characteristics

Fig.10 Body Diode Forward Voltage

ꢀꢀꢀ vs. Gate - Source Voltage

T_vj= 150ºC

Pulsed

-2

I_D=6.7A

-4

V_GS= -4V

V_GS= -2V

V_GS= 0V

V_GS= 18V

-6

-8

-10

-12

-14

-16

-18

-20

T_vj= 150ºC

T_vj= 25ºC

-10

-8

-6

-4

-2

-4

Drain - Source Voltage : V_DS[V]

Gate - Source Voltage : V_GS[V]

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lElectrical characteristic curves

Fig.11 Typical Transfer Characteristics (I)

100

Fig.12 Typical Transfer Characteristics (II)

V_DS= 10V

Pulsed

V_DS= 10V

Pulsed

T_vj= 150ºC

T_vj= 75ºC

T_vj= 25ºC

T_vj= 150ºC

T_vj= 75ºC

T_vj= 25ºC

T_vj= -25ºC

0.1

0.01

8 10 12 14 16 18 20

Gate - Source Voltage : V_GS[V]

Fig.13 Gate Threshold Voltage

vs. Junction Temperature

Fig.14 Transconductance vs. Drain Current

V_DS= 10V

I_D= 3.33mA

V_DS= 10V

Pulsed

T_vj= 150ºC

T_vj= 75ºC

T_vj= 25ºC

T_vj= -25ºC

0.1

-50

100

150

200

0.1

Junction Temperature : T_vj[ºC]

Drain Current : I_D[A]

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Datasheet

lElectrical characteristic curves

Fig.15 Static Drain - Source On - State

Resistance vs. Gate - Source Voltage

Fig.16 Static Drain - Source On - State

Resistance vs. Junction Temperature

0.24

0.20

0.16

0.12

0.08

0.04

0.00

0.48

T_vj= 25ºC

Pulsed

V_GS= 18V

Pulsed

0.42

I_D= 14A

I_D= 6.7A

0.36

I_D= 14A

0.30

I_D= 6.7A

0.24

I_D= -6.7A

0.18

I_D= -6.7A

0.12

0.06

0.00

-50

100

150

200

10 12 14 16 18 20 22

Gate - Source Voltage : V_GS[V]

Junction Temperature : T_vj[ºC]

Fig.17 Static Drain - Source On - State

Resistance vs. Drain Current

Fig.18 Normalized Drain - Source Breakdown

Voltage vs. Junction Temperature

1.04

1.03

1.02

1.01

1.00

0.99

0.98

0.1

T_vj= 150ºC

T_vj= 125ºC

T_vj= 75ºC

T_vj= 25ºC

T_vj= -25ºC

V_GS= 18V

Pulsed

0.01

100

-50

100

150

200

Drain Current : I_D[A]

Junction Temperature : T_vj[ºC]

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lElectrical characteristic curves

Fig.19 Typical Capacitance

ꢀꢀꢀꢀꢀvs. Drain - Source Voltage

Fig.20 C_ossStored Energy

10000

T_vj= 25ºC

1000

C_iss

C_oss

100

C_rss

T_vj= 25ºC

f = 1MHz

V_GS= 0V

100

200

300

400

0.1

100

1000

Drain - Source Voltage : V_DS[V]

Fig.21 Dynamic Input Characteristics

*Gate Charge Waveform

T_vj= 25ºC

V_DD= 300V

I_D= 6.7A

Pulsed

Total Gate Charge : Q_g[nC]

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lElectrical characteristic curves

Fig.19 Typical Switching Time

Fig.20 Typical Switching Loss

ꢀꢀꢀꢀꢀvs. Drain Current

ꢀꢀꢀꢀꢀvs. Drain - Source Voltage

1000

100

T_vj= 25°C

I_D= 6.7A

V_GS= +18V/0V

R_G= 0Ω

T_vj= 25°C

V_DD= 300V

V_GS= +18V/0V

R_G= 0Ω

t_f

L = 500μH

100

t_r

t_d(off)

E_on

t_d(on)

E_off

100

200

300

400

500

0.1

100

Drain Current : I_D[A]

Drain - Source Voltage : V_DS[V]

Fig.21 Typical Switching Loss

Fig.22 Typical Switching Loss

ꢀꢀꢀꢀꢀvs. Drain Current

ꢀꢀꢀꢀꢀvs. External Gate Resistance

200

T_vj= 25°C

I_D= 6.7A

V_DD= 300V

V_GS= +18V/0V

T_vj= 25°C

V_DD= 300V

V_GS= +18V/0V

R_G= 0Ω

150

L = 500μH

100

E_on

E_off

Drain Current : I_D[A]

External Gate Resistance : R_G[Ω]

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Datasheet

lMeasurement circuits and waveforms

Fig.1-1 Gate Charge and Switching Time Measurement Circuit

Fig.1-2 Waveforms for Switching Time

Fig.2-1 Switching Energy Measurement Circuit

Fig.2-2 Waveforms for Switching Energy Loss

E_on

I ∙ V_DSdt

E_off

I_D∙ V_DSdt

V_surge

I_rr

V_DS

I_D

Fig.3-2 Reverse Recovery Waveform

Fig.3-1 Reverse Recovery Time Measurement Circuit

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Datasheet

lPackage Dimensions

Unit: mm

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Unit: mm

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Datasheet

lDie Bonding Layout

: Die position

・Front view of the packaging.

・Dimensions are design values.

・If the heat sink is to be installed, it should be in contact with the die bonding point.

Unit: mm

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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R1107

Daattaasshheeeett

General Precaution

1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.

ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this document is current as of the issuing date and subject to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales

representative.

3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or

liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

Notice – WE

Rev.001

SCT3120AL [ROHM]

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