SCT4013DR [ROHM]

SCT4013DR是一款有助于应用产品实现小型化和更低功耗的SiC MOSFET。该产品采用带有驱动器源极引脚的封装形式，可更大程度地激发出SiC MOSFET的高速开关性能。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比，该系列产品的导通电阻降低了约40%，开关损耗降低了约50%。另外，还支持更容易处理的15V栅-源电压，使应用产品的设计更容易。;


型号：	SCT4013DR
厂家：	ROHM
描述：	SCT4013DR是一款有助于应用产品实现小型化和更低功耗的SiC MOSFET。该产品采用带有驱动器源极引脚的封装形式，可更大程度地激发出SiC MOSFET的高速开关性能。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比，该系列产品的导通电阻降低了约40%，开关损耗降低了约50%。另外，还支持更容易处理的15V栅-源电压，使应用产品的设计更容易。开关栅驱动驱动器
文件：	总17页 (文件大小：1464K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SCT4013DR

N-channel SiC power MOSFET

Datasheet

lOutline

TO-247-4L

V_DSS

750V

13mΩ

105A

312W

R_DS(on)(Typ.)

I_D

(1)

(2)

(3)

(4)

P_D

lInner circuit

● Features

(1)

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

(1) Drain

(2) Power Source

(3) Driver Source

(4) Gate

(4)

(3)

*1 Body Diode

(2)

5) Simple to drive

Please note Driver Source and Power Source are

not exchangeable. Their exchange might lead to

malfunction.

6) Pb-free lead plating ; RoHS compliant

lPackaging specifications

● Application

Tube

Packing

・Solar inverters

Reel size (mm)

Tape width (mm)

Basic ordering unit (pcs)

Taping code

・DC/DC converters

・Switch mode power supplies

・Induction heating

・Motor drives

Type

C15

Marking

SCT4013DR

lAbsolute maximum ratings (T_vj= 25°C unless otherwise specified.)

Parameter

Symbol

V_DSS

Value

750

Unit

Drain - source voltage

T_c= 25°C

105

Continuous drain

and source current

V_GS= V_{GS_on}

I_D, I_S

T_c= 100°C

V_GS= V_{GS_on}T_c= 25°C

Pulsed drain current

233

I_D,pulse

*1,*3

Body diode pulsed forward current

Body diode surge forward current

Gate - source voltage (DC)

105

I_S,pulse

T_c= 25°C

V_GS= 0 V

*1,*4

233

I_S,pulse

V_{GSS_DC}

-4 to +21

-4 to +23

Gate - source surge voltage (t_surge< 300ns)

Recommended turn-on gate - source drive voltage

Recommended turn-off gate - source drive voltage

Virtual junction temperature

V_{GSS_surge}

+15 to +18

V_{GS_on}

V_{GS_off}

T_vj

175

°C

T_stg

Range of storage temperature

-40 to +175

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Datasheet

●Electrical characteristics (T_vj= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

V_(BR)DSS

Conditions

V_GS= 0 V, I =

Unit

Min.

750

Max.

18.6mA

Drain - Source breakdown

voltage

T_vj= 25°C

V_GS= 0 V, V_DS

=750V

Zero Gate voltage

Drain current

I_DSST_vj= 25°C

T_vj= 150°C

μA

I_GSS+V_GS

, V_DS= 0V

Gate - Source leakage current

Gate threshold voltage

+21V

-4V

100

-100

4.8

I_GSS-V_GS

V_DS= 10V, I =

30.8mA

= 58A

2.8

V_GS(th)

R_DS(on)

R_G

V_GS= 18V, I_D

T_vj= 25°C

Static Drain - Source

on - state resistance

13.0

22.2

16.9

mΩ

T_vj= 150°C

Gate input resistance

f = 1MHz, open drain

lThermal resistance

Values

Typ.

Parameter

Symbol

Unit

K/W

Min.

Max.

0.48

Thermal resistance, junction - case

0.37

R_thJC

lTypical Transient Thermal Characteristics

Symbol

R_th1

Value

4.0 ×10

1.6 ×10

1.7 ×10

Unit

K/W

Symbol

C_th1

Value

1.2 ×10

4.6 ×10

2.6 ×10

Unit

-2

-1

-3

-2

R_th2

C_th2

Ws/K

R_th3

C_th3

R_th,n

R_th1

T_j

T_c

P_D

C_th1

C_th2

C_th,n

T_a

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Datasheet

●Electrical characteristics (T_vj= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

V_DS= 10V, I_D

Unit

Min.

Max.

Transconductance

= 58A

g_fs

C_issV_GS= 0V

C_ossV_DS

Input capacitance

4580

203

Output capacitance

Reverse transfer capacitance

500V

C_rss

f = 1MHz

V_GS= 0V

Effective output capacitance,

energy related

C_o(er)

263

V_DS

0V to 500V

500V

Total Gate charge

Gate - Source charge

Gate - Drain charge

Turn - on delay time

Rise time

170

Q_g

I_D=

58A

Q_gs

V_GS

18V

See Fig. 1-1, 1-2.

Q_gd

V_DS

500V

t_d(on)

I_D=

58A

t_r

V_GS

+18V / 0V

6.8Ω, L = 250μH

R_G=

Turn - off delay time

Fall time

t_d(off)

E_onincludes diode

reverse recovery

L_σ= 50nH, C_σ= 10pF

See Fig. 2-1, 2-2, 2-3.

t_f

Turn - on switching loss

Turn - off switching loss

500

310

E_on

μJ

E_off

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Datasheet

lBody diode electrical characteristics (Source-Drain) (T_vj= 25°C unless otherwise specified)

Values

Parameter

Forward voltage

Symbol

Conditions

V_GS= 0V, I_S

Unit

Min.

Typ.

3.3

Max.

= 58A

V_SD

I_F=

58A

Reverse recovery time

290

t_rr

V_R=

500V

Reverse recovery charge

Peak reverse recovery current

Q_rr

di/dt = 3300A/μs

L_σ= 50nH, C_σ= 10pF

See Fig. 3-1, 3-2.

I_rrm

*1 Limited by maximum T_vjand for Max. R_thJC

*2 Pulse width and duty cycle are limited by T_vj,max

*3 Only for body-diode, Repititive pulse, PW ≤ 1.5μs, Duty cycle ≤ 5%

*4 When used as a protective function, PW ≤ 10μs

*5 Example of acceptable V_GSwaveform

t_surge

+V_{GSS_surge}

+V_{GSS_DC}

t_surge

-V_{GSS_DC}

-V_{GSS_surge}

Please note especially when using driver source that V_{GSS_surge}must be in the range of

absolute maximum rating.

Please be advised not to use SiC-MOSFETs with V_GSbelow 10V as doing so may cause

thermal runaway.

*7 Tested after applying V_GS= 21V for 100ms.

*8 Pulsed

Measured conformable to JESD51-14.

See the application note "rthjc_measurement_and_usage_an-e.pdf". Link

URL: https://fscdn.rohm.com/en/products/databook/applinote/discrete/common/rthjc_measurement_and_usage_an-e.pdf

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Datasheet

lElectrical characteristic curves

Fig.1 Power Dissipation Derating Curve

350

Fig.2 Maximum Safe Operating Area

1000

Operation in this area is limited by R_DS(on)

300

250

200

150

100

<100ns*

100

1μs*

10μs*

100μs

PW decrease

1ms

T_c= 25ºC

Single Pulse

10ms

*Calculation (PW  10μs)

0.1

125

175

0.1

100 1000 10000

Case Temperature : T_C[°C]

Drain - Source Voltage : V_DS[V]

Fig.3 Typical Transient Thermal

Impedance vs. Pulse Width

0.1

0.01

Duty =

0.5

0.2

Duty increase

0.1

0.05

0.02

0.01

Single pulse

0.001

0.0001

T_c= 25ºC

1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1

Pulse Width : PW [s]

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Datasheet

lElectrical characteristic curves

T = 25ºC Typical Output

Characteristics(I)

T = 25ºC Typical Output

Characteristics(II)

Fig.4

Fig.5

100

T_vj= 25^oC

t_p≤ 200μs

T_vj= 25^oC

t_p≤ 200μs

V_GS= 6~18V, 2V step

V_GSincrease

V_GS= 6~18V, 2V step

V_GSincrease

Drain - Source Voltage : V_DS[V]

T = 25ºC 3rd Quadrant Characteristics

Fig.6

T_vj= 25^oC

t_p≤ 200μs

-20

-40

V_GS= -4V

V_GS= 0V

V_GS= 15V

V_GS= 18V

-60

V_GSincrease

-80

-100

-10

-8

-6

-4

-2

Drain - Source Voltage : V_DS[V]

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Datasheet

lElectrical characteristic curves

T = 150ºC Typical Output

Characteristics(I)

T = 150ºC Typical Output

Characteristics(II)

Fig.7

Fig.8

100

T_vj= 150^oC

t_p≤ 200μs

V_GS= 6~18V, 2V step

V_GSincrease

V_GS= 6~18V, 2V step

V_GSincrease

Drain - Source Voltage : V_DS[V]

T_vj= 150ºC 3rd Quadrant

Characteristics

Fig.10 Body Diode Forward Voltage

vs. Gate - Source Voltage

Fig.9

T_vj= 150^oC

t_p≤ 200μs

I_D= 58A

t_p≤ 200μs

-20

-40

V_GS= -4V

V_GS= 0V

V_GS= 15V

V_GS= 18V

T_vj=150ºC

-60

V_GSincrease

-80

T_vj=25ºC

-100

-10

-8

-6

-4

-2

-4

Drain - Source Voltage : V_DS[V]

Gate - Source Voltage : V_GS[V]

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Datasheet

lElectrical characteristic curves

Fig.11 Typical Transfer Characteristics (I)

100

Fig.12 Typical Transfer Characteristics (II)

100

V_DS= 10V

t_p≤ 200μs

V_DS= 10V

t_p≤ 200μs

T_vjincrease

T_vj= 150^oC

0.1

T_vj= 150^oC

T_vj= 75^oC

T_vj= 25^oC

T_vj= -25^oC

T_vj= 75^oC

T_vj= 25^oC

T_vj= -25^oC

0.01

Gate - Source Voltage : V_GS[V]

Fig.13 Gate Threshold Voltage

vs. Virtual Junction Temperature

Fig.14 Transconductance vs. Drain Current

100

V_DS= 10V

t_p≤ 200μs

I_D= 30.8mA

10V

V_DS

T_vj= 150^oC

T_vj= 75^oC

T_vj= 25^oC

T_vjincrease

T_vj= -25^oC

0.1

-50

100

150

200

0.1

100

Virtual Junction Temperature :

T_vj[ºC]

Drain Current : I_D[A]

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Datasheet

lElectrical characteristic curves

Fig.16 Static Drain - Source On - State

Resistance vs. Virtual Junction

Temperature

Fig.15 Static Drain - Source On - State

Resistance vs. Gate - Source Voltage

0.05

T_vj= 25^oC

t_p≤ 200μs

V_GS= 18V

t_p≤ 200μs

0.04

0.03

0.02

0.01

0.00

I_D= 91A

I_D= 58A

I_D= -58A

I_D= 91A

I_D= 58A

0.03

I_D= -58A

0.02

0.01

I_Dincrease

0.00

-50

100

150

200

10 12 14 16 18 20 22

Gate - Source Voltage : V_GS[V]

Virtual Junction Temperature :

T_vj[ºC]

Fig.18 Normalized Drain - Source Breakdown

Voltage vs. Virtual Junction

Temperature

1.1

Fig.17 Static Drain - Source On - State

Resistance vs. Drain Current

T_vj= 150^oC

T_vj= 125^oC

T_vj= 75^oC

T_vj= 25^oC

T_vj= -25^oC

0.1

1.0

0.01

T_vjincrease

V_GS= 0 V

V_GS= 18V

t_p≤ 200μs

18.6 mA

I_D=

0.9

0.001

-50

100

150 200

100

Drain Current : I_D[A]

Virtual Junction Temperature :

T_vj[ºC]

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Datasheet

lElectrical characteristic curves

Fig.19 Typical Capacitance

vs. Drain - Source Voltage

_ossStored Energy

Fig.20

10000

1000

100

T_vj= 25ºC

C_iss

C_oss

T_vj= 25^oC

f = 1MHz

V_GS= 0V

C_rss

100

200

300

400

500

0.1

100

1000

Drain - Source Voltage : V_DS[V]

Fig.21 Dynamic Input Characteristics

T_vj= 25°C

V_DD= 500V

I_D= 58A

100

200

Total Gate Charge : Q_g[nC]

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Datasheet

lElectrical characteristic curves

Fig.22 Typical Switching Time

vs. External Gate Resistance

Fig.23 Typical Switching Loss

vs. Drain - Source Voltage

250

1400

T_vj= 25°C

I_D= 58A

T_vj= 25°C

I_D= 58A

1200

V_DD= 500V

200

V_GS= +18V/0V

t_d(off)

V_GS= +18V/0V

R_G= 6.8Ω

1000

L = 250μH

150

800

600

400

200

100

E_on

t_r

E_off

t_d(on)

t_f

100

200

300

400

500

External Gate Resistance : R_G[Ω]

Drain - Source Voltage : V_DS[V]

Fig.24 Typical Switching Loss

vs. Drain Current

Fig.25 Typical Switching Loss

vs. External Gate Resistance

1400

T_vj= 25°C

V_DD= 500V

V_GS= +18V/0V

I_D= 58A

V_DD= 500V

1200

E_on

R_G= 6.8Ω

1000

V_GS= +18V/0V

L = 250μH

1000

800

600

400

200

L = 250μH

800

600

400

200

E_on

E_off

100

Drain Current : I_D[A]

External Gate Resistance : R_G[Ω]

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Datasheet

●Measurement circuits and waveforms

Fig.1-1 Gate Charge Measurement Circuit

Fig.1-2 Gate Charge Waveform

Fig.2-1 Switching Characteristics Measurement Circuit

Fig.2-2 Waveforms for Switching Time

Fig.2-3 Waveforms for Switching Energy Loss

E_on

I ∙ V_DSdt

E_off

I_D∙ V_DSdt

V_surge

I_rr

V_DS

I_D

Fig.3-1 Reverse Recovery Time Measurement Circuit

Fig.3-2 Reverse Recovery Waveform

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Datasheet

lPackage Dimensions

Unit: mm

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Datasheet

Unit: mm

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Datasheet

lDie Bonding Layout

: Die position

・Front view of the packaging.

・Dimensions are design values.

・If the heat sink is to be installed, it should be in contact with the die bonding point.

Unit: mm

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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R1107

Daattaasshheeeett

General Precaution

1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.

ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this document is current as of the issuing date and subject to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales

representative.

3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or

liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

Notice – WE

Rev.001

SCT4013DR [ROHM]

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