SCT4036KEHR [ROHM]
SCT4036KEHR是一款1200V、43A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻，是符合AEC-Q101标准的高可靠性车规级产品。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比，该系列产品的导通电阻降低了约40%，开关损耗降低了约50%。另外，该产品还支持更容易处理的15V栅-源电压，使应用产品的设计更容易。;
| 型号： | SCT4036KEHR |
| 厂家： | 
ROHM |
| 描述： | SCT4036KEHR是一款1200V、43A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻，是符合AEC-Q101标准的高可靠性车规级产品。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比，该系列产品的导通电阻降低了约40%，开关损耗降低了约50%。另外，该产品还支持更容易处理的15V栅-源电压，使应用产品的设计更容易。 开关 栅 |
| 文件： | 总17页 (文件大小：1381K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SCT4036KEHR
Automotive Grade N-channel SiC power MOSFET
Datasheet
lOutline
TO-247N
VDSS
1200V
36mΩ
43A
RDS(on) (Typ.)
*1
ID
(3)
(2
(1)
PD
176W
lInner circuit
● Features
(2)
1) Qualified to AEC-Q101
2) Low on-resistance
3) Fast switching speed
4) Fast reverse recovery
5) Easy to parallel
(1) Gate
(2) Drain
(3) Source
*1
(1)
*1 Body Diode
(3)
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant
lPackaging specifications
● Application
・Automobile
Tube
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
-
・Switch mode power supplies
-
30
Type
C11
Marking
SCT4036KE
lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified.)
Parameter
Symbol
VDSS
Value
1200
43
Unit
V
Drain - source voltage
Tc = 25°C
A
Continuous drain
and source current
*1
VGS = VGS_on
ID, IS
Tc = 100°C
30
A
*2
VGS = VGS_on Tc = 25°C
Pulsed drain current
84
A
ID,pulse
*1,*3
Body diode pulsed forward current
Body diode surge forward current
Gate - source voltage (DC)
43
A
IS,pulse
Tc = 25°C
VGS = 0 V
*1,*4
84
A
IS,pulse
VGSS_DC
-4 to +21
-4 to +23
V
*5
Gate - source surge voltage (tsurge < 300ns)
Recommended turn-on gate - source drive voltage
Recommended turn-off gate - source drive voltage
Virtual junction temperature
V
VGSS_surge
*6
+15 to +18
0
V
V
VGS_on
VGS_off
Tvj
175
°C
°C
Tstg
Range of storage temperature
-40 to +175
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
1/15
SCT4036KEHR
Datasheet
●Electrical characteristics (Tvj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
V(BR)DSS
Conditions
VGS = 0 V, I =
Unit
V
Min.
Max.
-
9.2mA
D
Drain - Source breakdown
voltage
Tvj = 25°C
VGS = 0 V, VDS
1200
-
=1200V
Zero Gate voltage
Drain current
IDSS Tvj = 25°C
Tvj = 150°C
-
-
1
10
-
80
-
μA
IGSS+ VGS
=
=
, VDS = 0V
, VDS = 0V
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
+21V
-4V
-
100
-100
4.8
nA
nA
V
IGSS- VGS
-
-
*7
VDS = 10V, I =
11.1mA
= 21A
2.8
-
VGS(th)
RDS(on)
RG
D
VGS = 18V, ID
Tvj = 25°C
Static Drain - Source
on - state resistance
*8
-
-
-
36
72
1
47
-
mΩ
Ω
Tvj = 150°C
Gate input resistance
f = 1MHz, open drain
-
lThermal resistance
Values
Typ.
Parameter
Symbol
Unit
K/W
Min.
-
Max.
0.85
*9
Thermal resistance, junction - case
0.65
RthJC
lTypical Transient Thermal Characteristics
Symbol
Rth1
Value
4.9 ×10
3.0 ×10
3.0 ×10
Unit
K/W
Symbol
Cth1
Value
8.7 ×10
4.0 ×10
5.2 ×10
Unit
-2
-1
-1
-4
-3
-2
Rth2
Cth2
Ws/K
Rth3
Cth3
Rth,n
Rth1
Tj
Tc
PD
Cth1
Cth2
Cth,n
Ta
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
2/15
SCT4036KEHR
Datasheet
●Electrical characteristics (Tvj = 25°C unless otherwise specified)
Values
Typ.
11
Parameter
Symbol
Conditions
VDS = 10V, ID
Unit
S
Min.
Max.
*8
Transconductance
= 21A
-
-
-
-
-
-
-
-
gfs
Ciss VGS = 0V
Coss VDS
Input capacitance
2335
70
=
Output capacitance
Reverse transfer capacitance
800V
pF
pF
Crss
f = 1MHz
VGS = 0V
5
Effective output capacitance,
energy related
Co(er)
-
84
-
VDS
VDS
=
=
0V to 800V
800V
*8
Total Gate charge
Gate - Source charge
Gate - Drain charge
Turn - on delay time
Rise time
-
-
-
-
-
-
-
-
-
91
20
24
10
28
31
12
480
57
-
-
-
-
-
-
-
-
-
Qg
ID =
21A
*8
nC
Qgs
VGS
=
18V
See Fig. 1-1, 1-2.
*8
Qgd
VDS
=
800V
*8
td(on)
ID =
21A
*8
tr
VGS
=
+18V / 0V
3.3Ω, L = 250μH
ns
RG =
*8
Turn - off delay time
Fall time
td(off)
Eon includes diode
reverse recovery
Lσ = 50nH, Cσ = 10pF
See Fig. 2-1, 2-2, 2-3.
*8
tf
*8
Turn - on switching loss
Turn - off switching loss
Eon
μJ
*8
Eoff
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
3/15
SCT4036KEHR
Datasheet
lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified)
Values
Parameter
Forward voltage
Symbol
Conditions
VGS = 0V, IS
Unit
Min.
-
Typ.
3.3
Max.
-
*8
= 21A
V
VSD
IF =
21A
*8
Reverse recovery time
-
-
-
20
130
12
-
-
-
ns
trr
VR =
800V
*8
Reverse recovery charge
Peak reverse recovery current
nC
A
Qrr
di/dt = 2400A/μs
Lσ = 50nH, Cσ = 10pF
See Fig. 3-1, 3-2.
*8
Irrm
*1 Limited by maximum Tvj and for Max. RthJC
.
*2 Pulse width and duty cycle are limited by Tvj,max
.
*3 Only for body-diode, Repititive pulse, PW ≤ 1.5μs, Duty cycle ≤ 5%
*4 When used as a protective function, PW ≤ 10μs
*5 Example of acceptable VGS waveform
tsurge
+VGSS_surge
+VGSS_DC
tsurge
-VGSS_DC
-VGSS_surge
Please note especially when using driver source that VGSS_surge must be in the range of
absolute maximum rating.
Please be advised not to use SiC-MOSFETs with VGS below 10V as doing so may cause
thermal runaway.
*6
*7 Tested after applying VGS = 21V for 100ms.
*8 Pulsed
Measured conformable to JESD51-14.
*9
See the application note "rthjc_measurement_and_usage_an-e.pdf". Link
URL: https://fscdn.rohm.com/en/products/databook/applinote/discrete/common/rthjc_measurement_and_usage_an-e.pdf
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
4/15
SCT4036KEHR
Datasheet
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
1000
200
180
160
140
120
100
80
Operation in this area is limited by RDS(on)
PW
100
10
1
<100ns*
1μs*
10μs*
100μs
1ms
PW decrease
60
40
Tc = 25ºC
Single Pulse
*Calculation (PW 10μs)
20
10ms
0
0.1
25
75
125
175
0.1
1
10
100 1000 10000
Case Temperature : TC [°C]
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Impedance vs. Pulse Width
1
0.1
0.01
Duty =
1
0.5
0.2
Duty increase
0.1
0.05
0.02
0.01
Single pulse
0.001
0.0001
Tc = 25ºC
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1
Pulse Width : PW [s]
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
5/15
Datasheet
SCT4036KEHR
lElectrical characteristic curves
T = 25ºC Typical Output
Characteristics(I)
T = 25ºC Typical Output
Characteristics(II)
Fig.4
40
Fig.5
20
vj
vj
Tvj = 25oC
tp ≤ 200μs
Tvj = 25oC
tp ≤ 200μs
30
20
10
0
15
10
5
VGS = 6~18V, 2V step
VGS increase
VGS = 6~18V, 2V step
VGS increase
0
0
2
4
6
8
10
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
T = 25ºC 3rd Quadrant Characteristics
Fig.6
0
vj
Tvj = 25oC
tp ≤ 200μs
VGS = -4V
VGS = 0V
VGS = 15V
VGS = 18V
-10
-20
-30
-40
VGS increase
-10
-8
-6
-4
-2
0
Drain - Source Voltage : VDS [V]
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
6/15
SCT4036KEHR
Datasheet
lElectrical characteristic curves
T = 150ºC Typical Output
Characteristics(I)
T = 150ºC Typical Output
Characteristics(II)
Fig.7
40
Fig.8
20
vj
vj
Tvj = 150oC
Tvj = 150oC
tp ≤ 200μs
tp ≤ 200μs
30
20
10
0
15
10
5
VGS = 6~18V, 2V step
VGS increase
VGS = 6~18V, 2V step
VGS increase
0
0
2
4
6
8
10
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Tvj = 150ºC 3rd Quadrant
Characteristics
Fig.10 Body Diode Forward Voltage
vs. Gate - Source Voltage
Fig.9
0
6
Tvj = 150oC
tp ≤ 200μs
ID = 21A
tp ≤ 200μs
5
4
3
2
1
0
VGS = -4V
VGS = 0V
VGS = 15V
VGS = 18V
-10
-20
-30
-40
Tvj=150ºC
VGS increase
Tvj=25ºC
-10
-8
-6
-4
-2
0
-4
0
4
8
12
16
20
Drain - Source Voltage : VDS [V]
Gate - Source Voltage : VGS [V]
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
7/15
SCT4036KEHR
Datasheet
lElectrical characteristic curves
Fig.11 Typical Transfer Characteristics (I)
100
Fig.12 Typical Transfer Characteristics (II)
40
30
20
10
0
VDS = 10V
tp ≤ 200μs
VDS = 10V
tp ≤ 200μs
10
1
Tvj increase
Tvj increase
Tvj = 150oC
0.1
Tvj = 150oC
Tvj = 75oC
Tvj = 25oC
Tvj = -25oC
Tvj = 75oC
Tvj = 25oC
Tvj = -25oC
0.01
0
4
8
12
16
20
0
4
8
12
16
20
Gate - Source Voltage : VGS [V]
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Virtual Junction Temperature
Fig.14 Transconductance vs. Drain Current
6
100
VDS = 10V
tp ≤ 200μs
ID = 11.1mA
10V
=
VDS
5
4
3
2
1
0
10
1
Tvj = 150oC
Tvj = 75oC
Tvj = 25oC
Tvj increase
Tvj = -25oC
0.1
-50
0
50
100
150
200
0.1
1
10
100
Virtual Junction Temperature :
Tvj [ºC]
Drain Current : ID [A]
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
8/15
SCT4036KEHR
Datasheet
lElectrical characteristic curves
Fig.16 Static Drain - Source On - State
Resistance vs. Virtual Junction
Temperature
Fig.15 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.14
0.14
Tvj = 25oC
tp ≤ 200μs
VGS = 18V
tp ≤ 200μs
0.12
0.12
ID = 32A
ID = 32A
0.10
0.10
ID = 21A
ID = 21A
0.08
0.08
ID = -21A
ID = -21A
0.06
0.04
0.06
0.04
ID increase
0.02
ID increase
0.02
0.00
0.00
-50
0
50
100
150
200
8
10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Virtual Junction Temperature :
Tvj [ºC]
Fig.18 Normalized Drain - Source Breakdown
Voltage vs. Virtual Junction
Temperature
1.1
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
1
Tvj = 150oC
Tvj = 125oC
Tvj = 75oC
Tvj = 25oC
Tvj = -25oC
0.1
1.0
Tvj increase
0.01
VGS = 0 V
VGS = 18V
tp ≤ 200μs
9.2 mA
ID =
0.9
0.001
-50
0
50
100
150
200
1
10
100
Drain Current : ID [A]
Virtual Junction Temperature :
Tvj [ºC]
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
9/15
SCT4036KEHR
Datasheet
lElectrical characteristic curves
Fig.19 Typical Capacitance
vs. Drain - Source Voltage
C
oss Stored Energy
Fig.20
30
10000
1000
100
Tvj = 25ºC
25
20
15
10
5
Ciss
Coss
10
Tvj = 25oC
f = 1MHz
VGS = 0V
1
Crss
0
0
200
400
600
800
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.21 Dynamic Input Characteristics
20
Tvj = 25°C
VDD= 800V
ID = 21A
15
10
5
0
0
50
100
Total Gate Charge : Qg [nC]
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
10/15
SCT4036KEHR
Datasheet
lElectrical characteristic curves
Fig.22 Typical Switching Time
vs. External Gate Resistance
Fig.23 Typical Switching Loss
vs. Drain - Source Voltage
120
1200
Tvj = 25°C
ID = 21A
VDD= 800V
Tvj = 25°C
ID = 21A
VGS= +18V/0V
RG = 3.3Ω
100
1000
td(off)
VGS= +18V/0V
L = 250μH
L = 250μH
80
60
40
20
0
800
td(on)
600
Eon
tf
400
200
0
Eoff
tr
0
5
10
15
20
200
400
600
800
External Gate Resistance : RG [Ω]
Drain - Source Voltage : VDS [V]
Fig.24 Typical Switching Loss
vs. Drain Current
Fig.25 Typical Switching Loss
vs. External Gate Resistance
1200
1200
Tvj = 25°C
Tvj = 25°C
VDD= 800V
VGS= +18V/0V
RG = 3.3Ω
ID = 21A
VDD= 800V
VGS= +18V/0V
1000
800
600
400
200
0
1000
Eon
Eon
L = 250μH
L = 250μH
800
600
400
200
0
Eoff
Eoff
30
0
5
10
15
20
0
10
20
40
Drain Current : ID [A]
External Gate Resistance : RG [Ω]
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
11/15
SCT4036KEHR
Datasheet
●Measurement circuits and waveforms
Fig.1-1 Gate Charge Measurement Circuit
Fig.1-2 Gate Charge Waveform
Fig.2-1 Switching Characteristics Measurement Circuit
Fig.2-2 Waveforms for Switching Time
Fig.2-3 Waveforms for Switching Energy Loss
Eon
=
I ∙ VDS dt
Eoff
=
ID ∙ VDS dt
D
Vsurge
Irr
VDS
ID
Fig.3-1 Reverse Recovery Time Measurement Circuit
Fig.3-2 Reverse Recovery Waveform
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
12/15
SCT4036KEHR
Datasheet
lPackage Dimensions
Unit: mm
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
13/15
SCT4036KEHR
Datasheet
Unit: mm
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
14/15
SCT4036KEHR
Datasheet
lDie Bonding Layout
: Die position
・Front view of the packaging.
・Dimensions are design values.
・If the heat sink is to be installed, it should be in contact with the die bonding point.
Unit: mm
www.rohm.com
© 2023 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50211-SCT4036KEHR
4.Apr.2023 - Rev.002
15/15
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
R1107
S
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明