SP8K2 [ROHM]
Switching (30V, 6.0A); 开关（ 30V ， 6.0A ）
| 型号： | SP8K2 |
| 厂家： | 
ROHM |
| 描述： | Switching (30V, 6.0A) |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SP8K2
Transistors
Switching (30V, 6.0A)
SP8K2
zExternal dimensions (Unit : mm)
zFeatures
1) Low on-resistance.
SOP8
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
5.0±0.2
zApplication
Power switching, DC / DC converter.
0.2±0.1
0.4±0.1
zStructure
1.27
0.1
Silicon N-channel
MOS FET
Each lead has same dimensions
zEquivalent circuit
zAbsolute maximum ratings (Ta=25°C)
It is the same ratings for the Tr. 1 and Tr. 2.
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
Limits
Unit
V
30
20
±6.0
±24
V
Continuous
Pulsed
A
2
2
Drain current
(1) (2) (3) (4)
1
IDP
A
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Source current
(Body diode)
Continuous
Pulsed
IS
1.6
A
1
2
1
1
ISP
6.4
A
Total power dissipation
Channel temperature
PD
2
W
°C
°C
(1)
(2)
(3)
(4)
Tch
Tstg
150
Storage temperature
1 Pw 10µs, Duty cycle 1%
−55 to +150
1 ESD PROTECTION DIODE
2 BODY DIODE
2 MOUNTED ON A CERAMIC BOARD.
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C)
Parameter
Symbol
Rth (ch-a)
Limits
62.5
Unit
Channel to ambient
°C / W
MOUNTED ON A CERAMIC BOARD.
1/3
SP8K2
Transistors
zElectrical characteristics (Ta=25°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Symbol Min. Typ. Max.
Conditions
GS=20V, VDS=0V
ID=1mA, VGS=0V
Unit
µA
V
Gate-source leakage
IGSS
−
−
−
10
−
V
Drain-source breakdown voltage V(BR) DSS 30
Zero gate voltage drain current
Gate threshold voltage
IDSS
−
1.0
−
−
1
µA
V
V
DS=30V, VGS=0V
DS=10V, ID=1mA
VGS (th)
−
2.5
30
42
47
−
V
21
30
33
−
ID=6.0A, VGS=10V
Static drain-source on-state
resistance
RDS (on)
−
mΩ ID=6.0A, VGS=4.5V
ID=6.0A, VGS=4V
−
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
4.0
−
S
ID=6.0A, VDS=10V
520
150
95
9
−
pF
pF
V
V
DS=10V
GS=0V
Coss
Crss
td (on)
−
−
−
−
pF f=1MHz
−
−
ns
ns
ns
ns
ID=3A, VDD 15V
GS=10V
RL=5Ω
GS=10Ω
t
r
−
21
36
13
7.2
1.8
2.8
−
V
Turn-off delay time
Fall time
td (off)
tf
−
−
−
−
R
Total gate charge
Gate-source charge
Qg
−
10.1
−
nC VDD 15V
nC GS=5V
nC ID=6.0A
Qgs
Qgd
−
V
Gate-drain charge
−
−
Pulsed
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Forward voltage
Symbol Min. Typ. Max.
VSD 1.2
Conditions
IS=6.4A, VGS=0V
Unit
V
−
−
Pulsed
2/3
SP8K2
Transistors
zElectrical characteristic curves
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
10000
Ta=25°C
Ta=25°C
VDD=15V
ID=6A
RG=10Ω
Pulsed
Ta=25°C
f=1MHz
t
f
V
V
DD=15V
GS=10V
V
GS=0V
RG=10Ω
Pulsed
1000
100
10
t
d (off)
Ciss
t
r
C
oss
rss
C
t
d (on)
1
0
2
4
6
8
10
12
14
0.01
0.1
1
10
100
0.01
0.1
1
10
TOTAL GATE CHARGE : Qg (nC)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
Fig.3 Dynamic Input Characteristics
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
200
10
1
10
1
Ta=25°C
Pulsed
V
DS=10V
V
GS=0V
Pulsed
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
150
100
50
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
I
I
D=6A
D=3A
0.1
0.1
0.01
0.01
0.001
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : VGS (V)
0.0
0.5
1.0
1.5
0
2
4
6
8
10
12
14
16
SOURCE-DRAIN VOLTAGE : VSD (V)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
Fig.6 Source Current vs.
Source-Drain Voltage
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
100
10
1000
100
10
1000
100
10
V
GS=10V
V
GS=4.5V
V
GS=4V
Pulsed
Pulsed
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
1
1
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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