SST6838T216 [ROHM]

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,;
SST6838T216
型号: SST6838T216
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,

放大器 光电二极管 晶体管
文件: 总4页 (文件大小:144K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SST6838  
Transistors  
NPN general purpose transistor  
SST6838  
zFeatures  
1) BVCEO minimum is 40V (I  
2) Complements the SST6839.  
zExternal dimensions (Unit : mm)  
C
= 1mA)  
SST6838  
2.9  
±
0.2  
0.9
1.9  
±
0.2  
0.95 0.95  
(2)  
(1)  
zPackage, marking and packaging specifications  
0~0.1  
Part No.  
Pacaging type  
Marking  
SST6838  
SST3  
RBR  
0.2Min.  
(3)  
All te  
the ions  
0.15  
+0.1  
0.06  
(1) Emitter  
(2) Base  
0.4  
T116  
Code  
) Collector  
ROHM : ST
Basic ordering unit (pieces)  
3000  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
imi
Unit  
V
VCBO  
VCEO  
VEBO  
0  
40  
5
0.2  
V
I
C
A
Collector power dissipation  
Junction temperature  
Storage temperature  
0.2  
W
°C  
°C  
g  
55 to
zElectrical characters (Ta=25°C)  
Param
Symbol  
.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base tage  
Collector-emitter down oltage  
BVCBO  
BVCE
50  
40  
200  
150  
50  
180  
2
0.5  
5
V
V
I
C
=10µA  
=1mA  
(Ta= −40°C to +125°C  
(Ta= −40°C to +125°C  
(Ta=85°C  
)
)
)
)
)
)
)
)
)
)
)
)
)
)
)
)
I
C
V
V
V
V
CB=30V  
CB=30V  
EB=4V  
EB=4V  
Collector cutoff curren
Emitoff current  
CBO  
µA  
µA  
(Ta=125°C  
(Ta=85°C  
(Ta=125°C  
(Ta=25°C  
(Ta=85°C  
(Ta=125°C  
0.5  
5
0.4  
0.5  
0.7  
800  
1000  
3.5  
I
I
I
C/I  
C/I  
C
/I  
B
B
B
=50mA/5mA  
=10mA/0.2mA  
=10mA/0.2mA  
r-emitter saturation voltage  
DC current transfer ratio  
VCE(sat)  
V
V
V
V
V
CE/I  
CE/I  
CE/I  
CE/I  
C=5V/1mA  
C=5V/1mA  
C=5V/1mA  
C=5V/10mA  
(Ta= −40°C to +25°C  
(Ta=85°C  
(Ta=125°C  
(Ta= −40°C to +25°C  
(Ta=25°C  
h
FE1  
FE2  
DC current transfer ratio  
Transition frequency  
h
MHz  
pF  
f
T
V
V
V
CE=12V , I =2mA , f=100MHz  
CB=12V , f=1MHz  
EB=0.5V , f=1MHz  
C
Collector output capacitance  
Emitter input capacitance  
Cob  
Cib  
(Ta=25°C  
(Ta=25°C  
17  
pF  
Rev.A  
1/3  
SST6838  
Transistors  
zElectrical characteristic curves  
0.50mA  
100  
80  
50  
10  
8
Ta=25°C  
30µA  
27µA  
24µA  
21µA  
V
CE=6V  
Ta=25°C  
20  
10  
5
0.30mA  
0.25mA  
0.20mA  
0.15mA  
60  
6
18µA  
15µA  
12µA  
C
°
2
1
100  
=
40  
4
Ta  
0.10mA  
0.05mA  
0.5  
6µ
20  
0
2
0
3µA  
0.2  
0.1  
IB=0A  
I
B
=0A  
12  
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
BASE TO EMITTER VOLTAGE : VBE (V)  
0
16  
20  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
COLR TO EMITTER VOLTAGE : VCE (V)  
Fig.2 Grounded emitter output  
.3 Grounded emitter output  
Fig.1 Grounded emitter propagation  
characteristics  
characteristics ( Ι )  
characteristics ( ΙΙ )  
500  
500  
0.5  
Ta=25°C  
Ta=25°C  
Ta=100°C  
0.2  
V
CE=5V  
3V  
1V  
200  
200  
100  
50  
25°C  
I
C
/I  
B
=50  
20  
55°
100  
10  
5  
50  
2
0.02  
0.01  
20  
10  
CE  
=
500 200  
COLLECTI (mA)  
10  
0.2 0.5  
1
2
0.2 0.5  
1
2
5
10 20 50 100 200  
(mA)  
0.2 0.5  
1
2
5
10 20 50 100 200  
(mA)  
C
COLLECTOR CURRENT : I  
C
COLLECTOR CURRENT : I  
C
Fig.5 DC currgain vs.  
Fig.4 DC current gain v
Fig. 6 Collector-emitter saturation  
voltage vs. collector current  
collector current ( ΙΙ )  
collector current )  
0.5  
0.2  
5  
IC/IB=10  
IC/IB=50  
Ta=25°C  
V
CE=6V  
500  
200  
Ta=100°C  
25°C  
55°C  
0.2  
0.1  
Ta=100°C  
25°C  
0.1  
55°C  
0.05  
0.02  
0.01  
100  
50  
0.02  
0.01  
0.2 0.5  
1
2
5
10 20 50 100 200  
(mA)  
0.2  
0.5  
1
2
5
10  
20  
50 100  
0.5 1  
2  
5 10 20  
50 100  
COLLECTOR CURRENT : I  
C
COLLECTOR CURRENT : I  
C
(mA)  
EMITTER CURRENT : I  
E
(mA)  
Fig.7 Collector-emitter saturation  
Fig.8 Collector-emitter saturation  
Fig.9 Gain bandwidth product vs.  
emitter current  
voltage vs. collector current ( Ι )  
voltage vs. collector current (ΙΙ)  
Rev.A  
2/3  
SST6838  
Transistors  
20  
10  
5
Ta=25°C  
Ta=25°C  
f=32MH  
Z
200  
100  
50  
f
I
I
=
1MHz  
=0A  
=0A  
V
CB=6V  
E
C
2
1
20  
10  
Cob  
0.2  
0.5  
1  
2  
5  
(mA)  
10  
0.2  
0.5  
1
2
5
10 20  
50  
EMITTER CURRENT : I  
E
COLLECTOR TO BASE VOLTAGE : VCB (V)  
EMITTER TO BASE VOLTAGE : VEB (V)  
Fig.11 Base-collector time coant  
vs. emitter current  
Fig.10 Collector output capacitance vs.  
collector-base voltage  
Emitter input capacitance vs.  
emitter-base voltage  
Rev.A  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications fo
product described in this document are for reference only. Upon actual use, therefore, please reques
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples tandard  
use and operation. Please pay careful attention to the peripheral conditions when desicuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, deed erein  
are intended only as illustrations of such devices and not as the specificatior such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be infringement of any  
third party's intellectual property rights or other proprietary rights, anfurtassumes no liablty of  
whatsoever nature in the event of any such infringement, or arisfroor connected with oate
to the use of such devices.  
Upon the sale of any such devices, other than for buyeht to use such deviceself, esell or  
otherwise dispose of the same, no express or implied rt olicense to practor mmercially  
exploit any intellectual property rights or other prietary rights ownerolled by  
ROHM CO., LTD. is granted to any such buy.  
Products listed in this document are no antiradon design.  
The products listed in this document desed to be used wiinary electronic equipment or devices  
(such as audio visual equipment, officutomation equipmecommunications devices, electrical  
appliances and electronic toys
Should you intend to use these pts with equipmenes which require an extremely high level of  
reliability and the malfution with would directly endaer human life (such as medical instruments,  
transportation equipmeaospace machine, nuclear-reactor controllers, fuel controllers and other  
safety devices), e be sure to consult wiour ales representative in advance.  
About Control Order in Japan  
Produdescribed herein are tjects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in an.  
In case of export from Japalease confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
n the basis of "catcfor Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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