UM6K33N_10 [ROHM]
1.2V Drive Nch + Nch MOSFET; 1.2V驱动N沟道+ N沟道MOSFET型号: | UM6K33N_10 |
厂家: | ROHM |
描述: | 1.2V Drive Nch + Nch MOSFET |
文件: | 总6页 (文件大小:187K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1.2V Drive Nch + Nch MOSFET
UM6K33N
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
UMT6
(SC-88)
<SOT-363>
Features
1) High speed switing.
2) Small package(UMT6).
3) Ultra low voltage drive(1.2V drive).
(6) (5) (4)
(1) (2) (3)
Application
Switching
Abbreviated symbol : K33
Packaging specifications
Inner circuit
(6)
(5)
(4)
Package
Taping
TN
Type
Code
∗1
Basic ordering unit (pieces)
3000
∗2
∗2
UM6K33N
∗1
(1) Tr1 SOURCE
(2) Tr1 GATE
(3) Tr2 DRAIN
(4) Tr2 SOURCE
(5) Tr2 GATE
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(6) Tr1 DRAIN
Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage
Symbol
VDSS
VGSS
ID
Limits
50
Unit
V
Gate-source voltage
8
V
Continuous
Pulsed
200
800
125
800
150
120
150
mA
mA
mA
mA
Drain current
*1
IDP
Is
Continuous
Pulsed
Source current
(Body Diode)
*1
*2
Isp
mW / TOTAL
PD
Power dissipation
mW / ELEMENT
Channel temperature
Tch
C
C
Range of storage temperature
*1 Pw10s, Duty cycle1%
Tstg
55 to +150
*2 Each terminal mounted on a recommended land.
Thermal resistance
Parameter
Symbol
Limits
Unit
*
833
°C / W /TOTAL
Channel to ambient
Rth (ch-a)
1042
°C / W /ELEMENT
* Each terminal mounted on a recommended land.
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UM6K33N
Data Sheet
Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol
IGSS
Min.
Typ.
-
Max.
Unit
A VGS=8V, VDS=0V
ID=1mA, VGS=0V
A VDS=50V, VGS=0V
Conditions
Gate-source leakage
-
10
Drain-source breakdown voltage V (BR)DSS
50
-
-
1
V
Zero gate voltage drain current
Gate threshold voltage
IDSS
-
-
VGS (th)
0.3
-
1.0
2.2
2.4
2.7
4.0
7.2
-
V
VDS=10V, ID=1mA
-
1.6
1.7
1.9
2.0
2.4
-
ID=200mA, VGS=4.5V
ID=200mA, VGS=2.5V
ID=100mA, VGS=1.8V
ID=40mA, VGS=1.5V
ID=20mA, VGS=1.2V
ID=200mA, VDS=10V
-
Static drain-source on-state
resistance
*
RDS (on)
-
-
-
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l
0.4
S
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
25
6
-
pF VDS=10V
-
pF VGS=0V
3
-
pF f=1MHz
*
*
*
*
4
-
ns ID=100mA, VDD 30V
ns VGS=4.5V
ns RL=300
ns RG=10
6
-
Turn-off delay time
Fall time
td(off)
tf
15
55
-
-
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol
Min.
-
Typ.
-
Max. Unit
1.2
Conditions
*
VSD
V
Is=200mA, VGS=0V
*Pulsed
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UM6K33N
Data Sheet
Electrical characteristic curves
0.4
0.4
0.3
0.2
0.1
0
1
0.1
VDS= 10V
Pulsed
VGS= 4.5V
GS= 2.5V
Ta=25°C
Pulsed
VGS= 4.5V
V
V
GS= 2.5V
GS=1.8V
VGS=1.5V
VGS=1.8V
VGS=1.5V
Ta=25°C
Pulsed
0.3
0.2
0.1
0
V
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
VGS= 1.2V
VGS=1.2V
VGS=1.0V
VGS=0.8V
VGS= 1.0V
0.01
0.001
VGS= 0.8V
0.8
0
0.5
1
1.5
2
0
0.2
0.4
0.6
1
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.3 Typical Transfer Characteristics
Fig.1 Typical Output Characteristics( I )
Fig.2 Typical Output Characteristics( II )
100
10
1
100
10
1
100
Ta= 25°C
Pulsed
VGS= 2.5V
Pulsed
VGS= 4.5V
VGS=1.2V
GS= 1.5V
VGS= 1.8V
Ta=125°C
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
Ta=75°C
Ta=25°C
Ta= -25°C
10
1
V
V
GS= 2.5V
GS= 4.5V
0.1
0.1
0.1
0.01
0.1
1
0.01
0.1
1
0.01
0.1
DRAIN-CURRENT : ID[A]
1
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( I )
Fig.5 Static Drain-Source On-State
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( III )
Resistance vs. Drain Current( II )
100
10
1
100
10
1
100
10
1
VGS= 1.2V
Pulsed
VGS= 1.8V
Pulsed
VGS= 1.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
0.1
0.1
0.01
0.1
1
0.01
0.1
1
0.01
0.1
1
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( IV )
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( VI )
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( V )
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UM6K33N
Data Sheet
10
9
8
7
6
5
4
3
2
1
0
1
1
Ta=25°C
Pulsed
VGS=0V
Pulsed
VDS= 10V
Pulsed
ID= 20mA
ID=200mA
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
0
5
10
0
0.5
1
1.5
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
SOURCE-DRAIN VOLTAGE : VSD [V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Static Drain-Source On-State
Fig.10 Forward Transfer Admittance
vs. Drain Current
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
Resistance vs. Gate Source Voltage
1000
100
10
1000
100
10
Ta=25°C
VDD=30V
Ta=25°C
f=1MHz
V
GS=0V
V
GS=4.5V
Ciss
tf
RG=10
td(off)
Pulsed
tr
Crss
Coss
1
td(on)
1
0.1
0.01
0.1
1
0.01
0.1
1
10
100
DRAIN-CURRENT : ID[A]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.13 Switching Characteristics
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
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2010.01 - Rev.A
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UM6K33N
Data Sheet
Measurement circuits
Pulse width
90%
V
GS
I
D
VDS
50%
10%
50%
V
V
GS
DS
R
L
10%
10%
90%
D.U.T.
V
DD
RG
90%
t
d(on)
td(off)
t
r
tf
t
on
toff
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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