UMF24N [ROHM]
Power management (dual trnasistors); 电源管理（双trnasistors ）
| 型号： | UMF24N |
| 厂家： | 
ROHM |
| 描述： | Power management (dual trnasistors) |
| 文件： | 总5页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMF24 / UMF24N
Transistors
Power management (dual transistors)
EMF24 / UMF24N
2SC4617 and DTC114E are housed independently in a EMT6 or UMT6 package.
zExternal dimensions (Units : mm)
zApplication
Power management circuit
EMF24
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
1.2
1.6
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
ROHM : EMT6
UMF24N
Each lead has same dimensions
Abbreviated symbol : F24
zStructure
Silicon epitaxial planar transistor
1.25
2.1
zEquivalent circuits
(3)
(2) (1)
0.1Min.
DTr2
Tr1
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
R1
R2
Abbreviated symbol :F24
(4)
(5)
(6)
R
1
=10kΩ
=10kΩ
R2
zPackaging specifications
Type
Package
EMF24
EMT6
F24
UMF24N
UMT6
F24
Marking
Code
T2R
TR
Basic ordering unit(pieces)
8000
3000
Rev.A 1/4
EMF24 / UMF24N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Limits
Parameter
Symbol
Unit
V
Collector-base voltage
VCBO
VCEO
VEBO
60
50
7
V
Collector-emitter voltage
Emitter-base voltage
Collector current
V
I
C
150
mA
mW
∗
Power dissipation
P
C
150 (TOTAL)
150
Junction temperature
Tj
C
C
Storage temperature
Tstg
−55 to +150
120mW per element must not be exceeded.
∗
DTr2
Parameter
Symbol
Limits
50
Unit
V
Supply voltage
VCC
Input voltage
Collector current
V
IN
−10~+40
100
V
∗1
∗2
I
C
mA
mA
mW
I
O
50
Output current
Power dissipation
P
Tj
Tstg
C
150(TOTAL)
150
−55 to +150
Junction temperature
Range of storage temperature
∗1 Characteristics of built-in transistor.
°
°
C
C
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
60
50
7
−
−
−
−
−
V
V
V
I
C
=
=
50µA
1mA
Collector-emitter breakdown voltage BVCEO
I
I
C
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
−
E
=
50µA
I
CBO
EBO
CE (sat)
FE
−
−
0.1 µA
0.1 µA
V
V
CB
=60V
Emitter cutoff current
I
−
−
EB=7V
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
V
−
−
0.4
390
−
V
−
I
C/I =50mA/5mA
B
h
180
−
−
V
CE
=
6V, I
C
=
1mA
180
2
MHz
f
T
V
CE
CB
=
=
12V, I
E
E
=−2mA, f=100MHz
V
12V, I
=
0A, f
=
1MHz
Output capacitance
Cob
−
3.5 PF
DTr2
Parameter
Symbol Min.
Typ.
Max.
0.5
Unit
V
Conditions
V
V
I(off)
I(on)
−
3
−
−
V
CC=5V, I
=0.3V, I
/I =10mA/0.5mA
=5V
CC=50V, V
=5V, I =5mA
O
=100µA
Input voltage
−
0.3
0.88
0.5
−
V
O
O
=10mA
Output voltage
Input current
V
O(on)
−
0.1
−
V
mA
µA
−
I
O I
I
I
−
V
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
I
O(off)
−
−
I
=0V
G
I
30
7
−
O
O
R1
10
1
13
1.2
−
kΩ
−
−
−
R
2
/R
1
0.8
−
Transition frequency
f
T
250
MHz
V
CE=10V, I
E
=−5mA, f=100MHz
∗
∗ Transition frequency of the device
Rev.A 2/4
EMF24 / UMF24N
Transistors
zElectrical characteristic curves
Tr1
0.50mA
50
10
8
100
80
30µA
27µA
24µA
21µA
Ta=25˚C
Ta=25˚C
VCE=6V
0.40mA
0.35mA
20
10
5
0.30mA
0.25mA
0.20mA
0.15mA
6
18µA
15µA
12µA
9µA
60
2
1
4
40
Ta=100˚C
0.10mA
0.05mA
0.5
6µA
2
0
20
0
3µA
0.2
0.1
I
B
=0A
12
IB=0A
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
0
4
8
16
20
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( II )
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics ( I )
500
500
Ta=25˚C
Ta=25˚C
0.5
VCE=5V
Ta=100˚C
V
CE=5V
3V
1V
25˚C
200
100
50
200
100
50
0.2
0.1
−55˚C
I
C/I
B
=50
0.05
20
10
20
10
0.02
0.01
20
10
0.2 0.5
1
2
5
10 20
50 100 200
0.2 0.5
1
2
5
10 20
50 100 200
0.2 0.5
1
2
5
10 20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current ( I )
Fig.6 Collector-emitter saturation
voltage vs. collector current
Fig.5 DC current gain vs. collector
current ( II )
0.5
0.5
0.5
IC/IB=10
Ta=25˚C
I
C/I
B
=50
0.2
0.2
Ta=100˚C
25˚C
−55˚C
0.2
0.1
I
C/I
B
=50
20
10
Ta=100˚C
25˚C
−55˚C
0.1
0.1
0.05
0.05
0.05
0.02
0.01
0.02
0.01
0.02
0.01
0.2 0.5
1
2
5
10 20
50 100 200
(mA)
0.2 0.5
1
2
5
10 20
50 100 200
(mA)
0.2
0.5
1
2
5
10
20
50 100
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : IC
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( I )
Fig.8 Collector-emitter saturation
voltage vs. collector current ( II )
Fig.9 Collector-emitter saturation
voltage vs. collector current ( III )
Rev.A 3/4
EMF24 / UMF24N
Transistors
20
10
5
Ta=25˚C
Ta=25˚C
Ta=25˚C
f=32MH
Z
VCE=6V
200
100
50
500
200
f
=
1MHz
V
CB=6V
IE=0A
IC=0A
100
50
2
1
20
10
−0.2
−0.5
−1
−2
−5
−10
−0.5 −1
−2
−5 −10 −20
−50 −100
0.2
0.5
1
2
5
10
20
50
EMITTER CURRENT : I
E
(mA)
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.10 Gain bandwidth product vs.
emitter current
Fig.12 Base-collector time constant vs.
emitter current
Fig.11 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
DTr2
10m
100
1k
V
O
=0.3V
V
CC=5V
VO=5V
5m
50
500
200
Ta=100°C
25°C
−40°C
2m
1m
Ta=100°C
25°C
−40°C
20
500µ
10
5
100
50
Ta=−40°C
25°C
100°C
200µ
100µ
50µ
2
20
1
10
5
20µ
10µ
5µ
500m
200m
100m
2
1
2µ
1µ
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
0
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I (A)
O
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
1
lO/lI=20
500m
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I (A)
O
Fig.4 Output voltage vs. output
current
Rev.A 4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号：
UMF24NTR
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, UMT6, SC-88, 6 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明