UMH7N [ROHM]
General purpose (dual digital transistors); 通用（双数字晶体管）
| 型号： | UMH7N |
| 厂家： | 
ROHM |
| 描述： | General purpose (dual digital transistors) |
| 文件： | 总1页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UMH7N / IMH7A
Transistors
General purpose (dual digital transistors)
UMH7N / IMH7A
!Features
!External dimensions (Units : mm)
1) Includes two DTC143T transistors in a single UMT
package.
UMH7N
1.25
2.1
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
50
50
0.1Min.
V
Each lead has same dimensions
5
V
ROHM : UMT6
EIAJ : SC-88
I
C
100
mA
UMH7N
FMG13, IMH7A
150 (TOTAL)
300 (TOTAL)
150
1
2
∗
∗
Collector power
dissipation
Pc
mW
Junction temperature
Storage temperature
Tj
˚C
˚C
Tstg
−55∼+150
IMH7A
1
2
120mW per element must not be exceeded.
200mW per element must not be exceeded.
∗
∗
1.6
2.8
!Package, marking, and Packaging specifications
Part No.
UMH7N
UMT6
H7
IMH7A
SMT6
H7
0.3to0.6
Package
Marking
Each lead has same dimensions
TR
T108
3000
Code
Basic ordering unit (pieces)
3000
ROHM : SMT6
EIAJ : SC-74
!Circuit diagram
UMH7N
IMH7A
R1
R1
R1
R1
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
50
50
5
−
−
−
−
−
−
−
−
0.5
0.5
600
0.3
6.11
V
V
I
I
I
C
=50µA
=1mA
C
V
E
=50µA
CB=50V
EB=4V
I
CBO
EBO
FE
CE(sat)
−
−
100
−
µA
µA
−
V
V
V
Emitter cutoff current
I
h
250
−
CE / IC=5V / 1mA
DC current transfer ratio
V
V
I
C
/ I
B
=5mA / 0.25mA
Collector-emitter saturation voltage
Input resistance
R1
3.29
4.7
kΩ
−
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