US6M2TR [ROHM]

2.5V Drive NchPch MOSFET; 2.5V驱动MOSFET NchPch
US6M2TR
型号: US6M2TR
厂家: ROHM    ROHM
描述:

2.5V Drive NchPch MOSFET
2.5V驱动MOSFET NchPch

晶体 小信号场效应晶体管 开关 光电二极管 驱动 PC
文件: 总4页 (文件大小:66K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
US6M2  
Transistors  
2.5V Drive Nch+Pch MOSFET  
US6M2  
zStructure  
zDimensions (Unit : mm)  
Silicon N-channel MOSFET /  
Silicon P-channel MOSFET  
TUMT6  
zFeatures  
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.  
2) High-speed switching, low On-resistance.  
3) Low voltage drive (2.5V drive).  
4) Built-in G-S Protection Diode.  
Abbreviated symbol : M02  
zApplications  
Switching  
zPackaging specifications  
zInner circuit  
(6)  
(5)  
(4)  
Package  
Taping  
TR  
Type  
Code  
1  
Basic ordering unit (pieces)  
3000  
US6M2  
2  
2  
1  
(1) Tr1 (Nch) Source  
(2) Tr1 (Nch) Gate  
(3) Tr2 (Pch) Drain  
(4) Tr2 (Pch) Source  
(5) Tr2 (Pch) Gate  
(6) Tr1 (Nch) Drain  
(1)  
(2)  
(3)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
zAbsolute maximum ratings (Ta=25°C)  
Limits  
Parameter  
Symbol  
Unit  
Tr1 : Nchannel Tr2 : Pchannel  
Drain-source voltage  
Gate-source voltage  
VDSS  
VGSS  
ID  
30  
12  
1.5  
6
20  
12  
1
V
V
A
Continuous  
Pulsed  
Drain current  
1  
IDP  
4
A
IS  
0.6  
6
0.4  
4  
A
Continuous  
Pulsed  
Source current  
(Body diode)  
1  
ISP  
A
W / TOTAL  
W / ELEMENT  
°C  
1.0  
0.7  
2  
Total power dissipation  
Channel temperature  
PD  
Tch  
150  
Storage temperature  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board.  
Tstg  
55 to +150  
°C  
zThermal resistance  
Parameter  
Symbol  
Limits  
125  
Unit  
°C/W / TOTAL  
°C/W / ELEMENT  
Rth(ch-a)  
Channel to ambient  
179  
Mounted on a ceramic board  
Rev.A  
1/3  
US6M2  
Transistors  
N-ch  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
µA VGS=12V, VDS=0V  
ID= 1mA, VGS=0V  
µA VDS= 30V, VGS=0V  
VDS= 10V, ID= 1mA  
Unit  
Gate-source leakage  
IGSS  
10  
Drain-source breakdown voltage V(BR) DSS 30  
V
Zero gate voltage drain current  
Gate threshold voltage  
IDSS  
0.5  
1
VGS (th)  
1.5  
240  
250  
340  
2.2  
V
170  
180  
240  
80  
13  
12  
7
mID= 1.5A, VGS= 4.5V  
mID= 1.5A, VGS= 4V  
mID= 1.5A, VGS= 2.5V  
Static drain-source on-state  
resistance  
RDS (on)  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Yfs  
Ciss  
1.5  
S
VDS= 10V, ID= 1.5A  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS= 10V  
Coss  
Crss  
td (on)  
VGS=0V  
f=1MHz  
VDD 15V  
I
V
D
= 0.75A  
t
r
9
GS= 4.5V  
Turn-off delay time  
Fall time  
td (off)  
15  
6
R
R
L
= 20Ω  
tf  
G
=10Ω  
Total gate charge  
Gate-source charge  
Qg  
1.6  
0.5  
0.3  
nC VDD 15V, VGS= 4.5V  
nC ID= 1.5A  
Qgs  
Qgd  
Gate-drain charge  
nC RL= 10Ω, RG= 10Ω  
Pulsed  
zBody diode characteristics (Source-drain) (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
IS= 0.6A, VGS=0V  
Unit  
V
Forward voltage  
V
SD  
1.2  
Rev.A  
2/3  
US6M2  
Transistors  
P-ch  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
µA VGS= 12V, VDS=0V  
ID= 1mA, VGS=0V  
µA VDS= 20V, VGS=0V  
VDS= 10V, ID= 1mA  
mID= 1A, VGS= 4.5V  
mID= 1A, VGS= 4V  
mID= 0.5A, VGS= 2.5V  
Unit  
Gate-source leakage  
IGSS  
10  
Drain-source breakdown voltage V(BR) DSS 20  
Zero gate voltage drain current  
V
IDSS  
1  
2.0  
390  
430  
800  
Gate threshold voltage  
VGS (th) 0.7  
V
280  
310  
570  
150  
20  
20  
9
Static drain-source on-state  
resistance  
RDS (on)  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Yfs  
Ciss  
0.7  
S
VDS= 10V, ID= 0.5A  
VDS= 10V  
VGS= 0V  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Coss  
Crss  
td (on)  
f=1MHz  
V
DD 15  
V
I
D
= 0.5A  
GS= 4.5V  
= 30Ω  
= 10Ω  
t
r
8
V
Turn-off delay time  
Fall time  
td (off)  
25  
10  
2.1  
0.5  
0.5  
R
L
tf  
R
G
Total gate charge  
Gate-source charge  
Qg  
nC VDD 15V, VGS= 4.5V  
nC ID= 1A  
nC RL= 15Ω, RG= 10Ω  
Qgs  
Qgd  
Gate-drain charge  
Pulsed  
zBody diode characteristics (Source-drain) (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
Unit  
V
Forward voltage  
V
SD  
1.2  
IS= 0.4A, VGS=0V  
Rev.A  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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