US6U37TR [ROHM]
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT6, 6 PIN;
| 型号： | US6U37TR |
| 厂家： | 
ROHM |
| 描述： | Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT6, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US6U37
Transistors
2.5V Drive Nch+SBD MOSFET
US6U37
zStructure
zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Schottky barrier diode
TUMT6
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
Abbreviated symbo
zApplications
Switching
zInner circuit
(6)
(4)
zPackage specifications
Package
Taping
TR
∗2
Type
Code
Basic ordering unit (pieces)
300
(1)Gate
(2)Source
(3)Cathode
(4)Anode
(5)Anode
(6)Drain
∗1
US6U37
(1)
(2)
(3)
∗1 ESD protection diode
∗2 Body diode
zAbsolute maximum rgs (Ta=25°C)
<MOSFET>
eter
Drain-source
Symbol
Limits
30
Unit
SS
V
V
Gate-source vol
12
Continu
sed
1.5
6.0
0.6
6.0
150
A
Draicurrent
∗1
∗1
IDP
A
Source rrent
(Bdy dio)
Cuous
Puls
IS
A
ISP
A
el temperature
er dissipation
Tch
PD
°C
∗2
0.7
W / ELEMENT
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
<Di>
Parameter
Symbol
VRM
VR
Limits
25
Unit
Repetitive peak reverse voltage
Reverse voltage
Forward current
V
20
0.7
10
V
IF
A
∗1
IFSM
Tj
Forward current surge peak
Junction temperature
A
°C
150
0.5
∗2
PD
Power dissipation
W / ELEMENT
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
1/4
US6U37
Transistors
<MOSFET and Di>
Parameter
Symbol
Limits
1.0
Unit
W / TOTAL
°C
∗1
Power dissipation
PD
Range of storage temperature
∗1 Mounted on a ceramic board
Tstg
−55 to +150
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min. Typ. Max.
Conditions
µA VGS= 12V, VDS=0V
ID= 1mA, VGS=0V
µA VDS= 30V, VGS=0V
VDS= 10V, ID= 1mA
Unit
Gate-source leakage
IGSS
−
−
−
10
−
Drain-source breakdown voltage V(BR) DSS 30
V
Zero gate voltage drain current
Gate threshold voltage
IDSS
−
0.5
−
−
−
−
−
1
VGS (th)
1.5
240
250
340
−
−
−
−
−
−
2.
V
170
180
240
−
80
14
12
7
mΩ ID= 1.5A, VG4.5V
mΩ ID= 1.5A, VG
mΩ ID= 1.5A, V
Static drain-source on-state
resistance
∗
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
1.5
S
VDS= 1ID= 15A
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
VDS0V
Coss
Crss
td (on)
VS=0
1MHz
∗
∗
∗
VD15V
I
V
D
= 0.75A
t
r
9
GS= 4.5V
Turn-off delay time
Fall time
td (off)
15
6
R
R
L
20Ω
=10Ω
∗
∗
tf
G
Total gate charge
Gate-source charge
Qg
1
5
0
nC VDD 1V, = 4.5V
∗
∗
Qgs
Qgd
−
−
−
−
nC ID= 1.5A
Gate-drain charge
nC 0Ω, RG= 10Ω
∗Pulsed
<Body diode characteristics (Source-
Parameter ymbol Min. Typ. Max.
Forward voltage 1.2
V
Conditions
IS= 0.6A, VGS=0V
V
S
−
−
<Di>
Pa
Symbol Min. Max.
Conditions
Unit
V
0.49
200
IF= 0.7A
VR= 20V
Forward vol
Reverse curren
V
F
−
−
µA
2/4
US6U37
Transistors
zElectrical characteristics curves
1000
1000
6
5
Ta=25°C
Ta=25°C
Ta=25°C
DD=15V
=1.5A
=10Ω
V
V
DD=15V
GS=4.5V
f=1MHz
V
V
GS=0V
I
D
R
G
=10Ω
R
G
Pulsed
Pulsed
tf
Ciss
Crss
100
4
3
2
100
10
1
td(off)
Coss
10
1
td(on)
tr
1
0
0.01
0.1
1
10
100
0.01
0.1
1
10
0
1
1.5
2
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
TAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
Fig.2 Switching Characteristics
3 Dynamic Input Characteristics
vs. Drain-Source Voltage
10
1
1.0
0.9
0.8
10
V
DS=10V
V
GS=0V
Ta=25°C
ulsed
Pulsed
Pulsed
ID=1.5A
Ta=125°C
75°C
=125°C
75°C
0.7
0.6
25°C
−25°C
25°C
−25°C
0.1
0.01
0.5
0.4
ID0.75
0.1
0.1
0.01
0.0
0.001
0
0
0.0
0.5
1.0
1.5
2.0
1
2
3
7
8
9
10
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V)
GATE-SOURCGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Typical Transfer Chacterics
Fig.5 Static Drain-Source
Fig.6 Source Current vs.
Source-Drain Voltage
On-State Resistance vs.
Gate source Voltage
10
10
10
V
GS=
V
GS=4.0V
V
GS=2.5V
Pulse
Pulsed
Pulsed
Ta=125°C
75°C
1
1
1
Ta=125°C
75°C
Ta=125°C
75°C
25°C
−25°C
25°C
25°C
−25°C
−25°C
0.1
0.01
0.1
0.01
0.1
0.01
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
3/4
US6U37
Transistors
1
0.1
100000
Pulsed
Ta = 125
Ta = 75
Ta = 25
℃
℃
℃
pulsed
10000
1000
100
10
Ta = 125
℃
Ta = 75
Ta = 25
℃
℃
Ta= - 25
℃
0.01
0.001
Ta= - 25
℃
1
0.1
0.01
0
5
10
15
20
25
0
0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE : VF(V)
REVERSE VOLTAGE : VR [V]
Fig.11 Forward Current vs. ForwarVolte
Fig.10 Reverse Current vs. Reverse
zMeasurement circuit
Pulse Width
V
GS
ID
V
DS
90%
50%
10%
50%
V
GS
DS
RL
V
10%
10%
D.U.T.
RG
V
DD
90%
90%
t
d(o
td(off)
t
r
tf
t
on
t
off
Fig.13 Switching Time Waveforms
Fig.12 Switching Tst Circuit
V
G
V
S
ID
V
D
Q
g
RL
VGS
(C
D.
Q
gs
Qgd
RG
V
DD
Charge
Fig.14 Gate Charge Measurement Circuit
Fig.15 Gate Charge Waveform
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please reuest
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of stand
use and operation. Please pay careful attention to the peripheral conditions when desning circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, describ
are intended only as illustrations of such devices and not as the specifications for sh dees. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free fnfringement of any
third party's intellectual property rights or other proprietary rights, and fher, sumes no liability of
whatsoever nature in the event of any such infringement, or arising fronnected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's righse such devices itseresl or
otherwise dispose of the same, no express or implied right licee to practice or commercally
exploit any intellectual property rights or other propritary hts owned or coted by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation des.
The products listed in this document are dened be used with ordnary electronic equipment or devices
(such as audio visual equipment, offie-aumation equipment, ommnications devices, electrical
appliances and electronic toys).
Should you intend to use these prods with equipment or des hich require an extremely high level
of reliability and the malfuof which woultly danger human life (such as medical
instruments, transportation ent, aerospac, nuclear-reactor controllers, fuel controllers
and other safety deviceplease be sure to consult r sales representative in advance.
It is our top priority to pply oducts with the utmost qualy and reliability. However, there is always a chance
of failure due to unexpefactors. Therefore, ease take into account the derating characteristics and allow
for sufficient saeatures, such as extra ganti-flammability, and fail-safe measures when designing in
order teveosble accidents thamaresult in bodily harm or fire caused by component failure. ROHM
caneld responsible for any damagearising from the use of the products under conditions out of the
rangthe secifications or duon-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
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