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IRF9641 [SAMSUNG]

P-CHANNEL POWER MOSFETS; P沟道功率MOSFET

IRF9641


元器件型号：	IRF9641
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	P-CHANNEL POWER MOSFETS P沟道功率MOSFET 晶体晶体管开关脉冲局域网
PDF文件：	总12页 (文件大小：512K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF9641参数

IRF9642

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-220AB

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99 ETC

IRF9642

P-CHANNEL POWER MOSFETS

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40 SAMSUNG

IRF9642

P-CHANNEL POWER MOSFETS

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22 SAMSUNG

IRF9642

Power Field-Effect Transistor, 9A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9643

P-CHANNEL POWER MOSFETS

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27 SAMSUNG

IRF9643

P-CHANNEL POWER MOSFETS

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26 SAMSUNG

IRF9643

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 9A I(D) | TO-220AB

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67 ETC

IRF9910

Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box

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154 IRF

IRF9910PBF

HEXFET㈢Power MOSFET

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59 IRF

IRF9910PBF_08

Dual SO-8 MOSFET for POL Low Gate Charge

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30 IRF

IRF9910PBF-1

Power Field-Effect Transistor

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0 IRF

IRF9910TRPBF

Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8

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0 INFINEON

IRF9910TRPBF-1

Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

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1 INFINEON

IRF9952

Power MOSFET(Vdss=+-30V)

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357 IRF

IRF9952

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,

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5 INFINEON

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