IRFP220 [SAMSUNG]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
IRFP220
型号: IRFP220
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

文件: 总7页 (文件大小:535K)
下载:  下载PDF数据表文档文件

IRFP221

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 SAMSUNG

IRFP222

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 SAMSUNG

IRFP223

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 SAMSUNG

IRFP22N50A

Power MOSFET

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122 VISHAY

IRFP22N50A

Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=22A)

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475 IRF

IRFP22N50APBF

HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.23ヘ , ID = 22A )

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100 IRF

IRFP22N60K

Power MOSFET

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64 VISHAY

IRFP22N60K

SMPS MOSFET

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85 IRF

IRFP22N60K

SMPS MOSFET

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162 IRF

IRFP22N60KPBF

Power MOSFET

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34 VISHAY

IRFP22N60KPBF

HEXFET Power MOSFET

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86 IRF

IRFP230

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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3 SAMSUNG

IRFP231

Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

IRFP232

Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

IRFP232

Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG