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IRFP352 [SAMSUNG]

N-CHANNEL POWER MOSFETS; N沟道功率MOSFET
IRFP352
元器件型号： IRFP352
生产厂家： SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用：

N-CHANNEL POWER MOSFETS
N沟道功率MOSFET
PDF文件： 总5页 (文件大小：219K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFP352参数
 查看货源

IRFP352R

 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14A I(D) | TO-247

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18 ETC

IRFP353

 N-CHANNEL POWER MOSFETS

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106 SAMSUNG

IRFP353

 Power Field-Effect Transistor, 13A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

IRFP353R

 TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 14A I(D) | TO-247

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12 ETC

IRFP354

 Power MOSFET(Vdss=450V, Rds(on)=0.35ohm, Id=14A)

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33 IRF

IRFP354PBF

 HEXFET㈢PowerMOSFET

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15 IRF

IRFP360

 Power MOSFET

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299 VISHAY

IRFP360

 MegaMOS FET

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122 IXYS

IRFP360

 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

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655 INTERSIL

IRFP360

 Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

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486 IRF

IRFP360LC

 Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

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195 IRF

IRFP360LC

 Power MOSFET

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50 VISHAY

IRFP360LCPBF

 Power MOSFET

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19 VISHAY

IRFP360LCPBF

 HEXFET Power MOSFET

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51 IRF

IRFP360PBF

 HEXFET㈢ Power MOSFET

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138 IRF
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