IRFR312 [SAMSUNG]

Power Field-Effect Transistor, 1A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;

IRFR312


型号：	IRFR312
厂家：	SAMSUNG
描述：	Power Field-Effect Transistor, 1A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
文件：	总5页 (文件大小：183K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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