IRFR9014 [SAMSUNG]

Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3;
IRFR9014
型号: IRFR9014
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

文件: 总1页 (文件大小:31K)
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IRFR9014PBF

Power MOSFET

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28 VISHAY

IRFR9014PBF

HEXFET㈢ Power MOSFET

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47 IRF

IRFR9014-T1

Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

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0 SAMSUNG

IRFR9014TR

Power MOSFET

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45 VISHAY

IRFR9014TRA

Power MOSFET

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18 KERSEMI

IRFR9014TRL

Power MOSFET

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25 VISHAY

IRFR9014TRL

HEXFET Power MOSFET

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49 IRF

IRFR9014TRL

HEXFET Power MOSFET

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19 IRF

IRFR9014TRLA

Power MOSFET

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1 KERSEMI

IRFR9014TRLPBF

Power MOSFET

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25 VISHAY

IRFR9014TRLPBFA

Power MOSFET

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1 KERSEMI

IRFR9014TRPBF

Power MOSFET

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44 VISHAY

IRFR9014TRPBFA

Power MOSFET

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1 KERSEMI

IRFR9014TRR

Power MOSFET

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1 KERSEMI

IRFR9014TRRPBF

Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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0 IRF