IRFS252 [SAMSUNG]
Power Field-Effect Transistor, 17.3A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN;
| 型号： | IRFS252 |
| 厂家： | 
SAMSUNG |
| 描述： | Power Field-Effect Transistor, 17.3A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN 局域网 晶体管 |
| 文件： | 总1页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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