IRFS3004TRLPBF [INFINEON]
Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3;
| 型号： | IRFS3004TRLPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 |
| 文件： | 总11页 (文件大小：453K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97377
IRFB3004PbF
IRFS3004PbF
IRFSL3004PbF
HEXFET® Power MOSFET
Applications
D
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
VDSS
RDS(on) typ.
max.
40V
1.4m
1.75m
Ω
Ω
G
ID
340A
c
(Silicon Limited)
Benefits
ID
195A
S
(Package Limited)
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
D
D
D
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
S
S
S
D
D
G
G
G
D2Pak
IRFS3004PbF
TO-220AB
IRFB3004PbF
TO-262
IRFSL3004PbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Max.
340c
240c
195
Units
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
1310
PD @TC = 25°C
380
W
Maximum Power Dissipation
2.5
Linear Derating Factor
W/°C
V
VGS
± 20
Gate-to-Source Voltage
4.4
Peak Diode Recovery f
dv/dt
TJ
V/ns
-55 to + 175
Operating Junction and
TSTG
°C
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
10lbfxin (1.1Nxm)
Avalanche Characteristics
Single Pulse Avalanche Energy e
EAS (Thermally limited)
300
mJ
A
Avalanche Currentꢀd
IAR
See Fig. 14, 15, 22a, 22b
Repetitive Avalanche Energy d
EAR
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case kl
Typ.
–––
Max.
0.40
–––
62
Units
RθJC
RθCS
RθJA
RθJA
0.50
–––
Case-to-Sink, Flat Greased Surface, TO-220
°C/W
Junction-to-Ambient, TO-220
2
–––
40
Junction-to-Ambient (PCB Mount) , D Pak
j
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1
02/26/09
IRFB/S/SL3004PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
40 ––– –––
––– 0.037 ––– V/°C Reference to 25°C, ID = 5mAd
Conditions
VGS = 0V, ID = 250µA
V
–––
2.0
1.4 1.75
V
GS = 10V, ID = 195A g
VDS = VGS, ID = 250µA
DS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
mΩ
V
VGS(th)
–––
4.0
20
IDSS
Drain-to-Source Leakage Current
––– –––
µA
V
––– ––– 250
––– ––– 100
––– ––– -100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
V
GS = 20V
GS = -20V
V
RG
–––
2.2
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Min. Typ. Max. Units
Conditions
VDS = 10V, ID = 195A
1170 ––– –––
S
Qg
Total Gate Charge
––– 160 240
nC ID = 187A
VDS =20V
Qgs
Qgd
Qsync
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
40
68
92
23
–––
–––
–––
–––
VGS = 10V g
ID = 187A, VDS =0V, VGS = 10V
ns
VDD = 26V
––– 220 –––
––– 90 –––
ID = 195A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.7Ω
VGS = 10V g
––– 130 –––
––– 9200 –––
––– 2020 –––
––– 1340 –––
––– 2440 –––
––– 2690 –––
Ciss
Coss
Crss
Input Capacitance
pF
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
Coss eff. (ER)
Effective Output Capacitance (Energy Related)
V
GS = 0V, VDS = 0V to 32V i, See Fig. 11
GS = 0V, VDS = 0V to 32V h
iꢀ
Coss eff. (TR)
V
Effective Output Capacitance (Time Related)
h
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
––– –––
A
MOSFET symbol
340
c
(Body Diode)
Pulsed Source Current
(Body Diode)ꢀd
showing the
integral reverse
G
ISM
––– ––– 1310
A
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
–––
–––
–––
–––
–––
V
TJ = 25°C, IS = 195A, VGS = 0V g
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 34V,
–––
–––
–––
–––
–––
27
31
18
41
1.2
ns
IF = 195A
di/dt = 100A/µs g
Qrr
Reverse Recovery Charge
nC
A
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
ISD ≤ 195A, di/dt ≤ 930A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
.
.
Limited by TJmax, starting TJ = 25°C, L = 0.016mH
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use
above this value .
2
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IRFB/S/SL3004PbF
10000
1000
100
10000
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
≤
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
≤
10
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
I
= 195A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 25V
DS
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 187A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
V
V
= 32V
= 20V
= C + C
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
100
1
10
, Drain-to-Source Voltage (V)
100
0
50
100
150
200
V
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFB/S/SL3004PbF
1000
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100
10
1
100µsec
1msec
T
= 25°C
J
10msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
1
0.0
0.5
1.0
1.5
2.0
1
10
, Drain-to-Source Voltage (V)
100
V
, Source-to-Drain Voltage (V)
V
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
350
300
250
200
150
100
50
50
48
46
44
42
40
Id = 5mA
Limited By Package
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1400
I
D
TOP
30A
54A
BOTTOM 195A
1200
1000
800
600
400
200
0
-5
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
4
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IRFB/S/SL3004PbF
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.00646 0.000005
τ
τ
J τJ
Cτ
0.10020 0.000124
0.18747 0.001374
0.10667 0.008465
τ
τ
1τ1
Ci= τi/Ri
τ
τ
2τ2
3τ3
4τ4
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
∆
pulsewidth, tav, assuming Tj = 150°C and
0.01
Tstart =25°C (Single Pulse)
0.05
0.10
Allowed avalanche Current vs avalanche
∆Τ
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
320
280
240
200
160
120
80
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
TOP
BOTTOM 1.0% Duty Cycle
= 195A
Single Pulse
I
D
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
40
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
Starting T , Junction Temperature (°C)
EAS (AR) = PD (ave)·tav
J
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
IRFB/S/SL3004PbF
4.5
4.0
3.5
3.0
2.5
10
9
I = 78A
F
V
= 34V
R
T = 25°C
J
8
T = 125°C
J
7
6
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
5
2.0
1.5
1.0
4
3
2
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
100
200
300
400
500
T
J
di /dt (A/µs)
F
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
350
11
I = 78A
I = 117A
F
F
10
V
= 34V
V
= 34V
R
300
250
200
150
100
50
R
9
8
7
6
5
4
3
2
1
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
100
200
300
400
500
100
200
300
400
500
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
400
I = 117A
F
V
350
300
250
200
150
100
50
= 34V
R
T = 25°C
J
T = 125°C
J
0
100
200
300
400
500
di /dt (A/µs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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IRFB/S/SL3004PbF
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
0.01Ω
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
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7
IRFB/S/SL3004PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
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/2*2
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TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFB/S/SL3004PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
25
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRFB/S/SL3004PbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
25
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRFB/S/SL3004PbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2009
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