IRFS433 [SAMSUNG]
Power Field-Effect Transistor, 2.8A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN;型号: | IRFS433 |
厂家: | SAMSUNG |
描述: | Power Field-Effect Transistor, 2.8A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN |
文件: | 总1页 (文件大小:26K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRFS4410TRLPBF
Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRFS4410TRR
Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
INFINEON
IRFS4410TRRPBF
Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRFS4410Z
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明