IRFS443 [SAMSUNG]
Power Field-Effect Transistor, 4.8A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN;
| 型号： | IRFS443 |
| 厂家： | 
SAMSUNG |
| 描述： | Power Field-Effect Transistor, 4.8A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN |
| 文件： | 总1页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
IRFS4510TRLPBF
Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3/2
INFINEON
IRFS4510TRRPBF
Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3/2
INFINEON
IRFS452
Power Field-Effect Transistor, 8.3A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
SAMSUNG
IRFS453
Power Field-Effect Transistor, 8.3A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
SAMSUNG
©2020 ICPDF网 联系我们和版权申明