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IRFS630B [FAIRCHILD]

200V N-Channel MOSFET; 200V N沟道MOSFET
IRFS630B
元器件型号： IRFS630B
生产厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述和应用：

200V N-Channel MOSFET
200V N沟道MOSFET
PDF文件： 总10页 (文件大小：860K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFS630B参数
 查看货源

IRFS631

 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5.9A I(D) | SOT-186

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52 ETC

IRFS631

 Power Field-Effect Transistor, 5.9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRFS632

 Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS634

 TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 5.5A I(D) | TO-220VAR

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303 ETC

IRFS634

 Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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2 SAMSUNG

IRFS634A

 Advanced Power MOSEFT

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592 SAMSUNG

IRFS634B

 250V N-Channel MOSFET

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29 KERSEMI

IRFS634B

 250V N-Channel MOSFET

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235 FAIRCHILD

IRFS635

 TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4.4A I(D) | TO-220VAR

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35 ETC

IRFS635

 Power Field-Effect Transistor, 4.4A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS640

 200V N-Channel MOSFET

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394 FAIRCHILD

IRFS640

 200V N-Channel MOSFET

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117 FAIRCHILD

IRFS640

 Improved inductive ruggedness

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55 SAMSUNG

IRFS640

 Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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1 SAMSUNG

IRFS640A

 Rugged Gate Oxide Technology

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46 FAIRCHILD
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