IRFS740 [SAMSUNG]

Power Field-Effect Transistor, 5.4A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
IRFS740
型号: IRFS740
厂家: SAMSUNG    SAMSUNG
描述:

Power Field-Effect Transistor, 5.4A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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