IRFS7430-7P [INFINEON]
40V 单个 N 通道 HEXFET Power MOSFET, 采用 7引脚 D2-Pak 封装;
| 型号： | IRFS7430-7P |
| 厂家： | 
Infineon |
| 描述： | 40V 单个 N 通道 HEXFET Power MOSFET, 采用 7引脚 D2-Pak 封装 |
| 文件： | 总12页 (文件大小：548K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRFS7430-7PPbF
Application
HEXFET® Power MOSFET
Brushed Motor drive applications
BLDC Motor drive applications
PWM Inverterized topologies
Battery powered circuits
Half-bridge and full-bridge topologies
Electronic ballast applications
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
VDSS
40V
RDS(on) typ.
0.55m
0.75m
522A
max
ID (Silicon Limited)
ID (Package Limited)
240A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
D
S
Gate
Drain
Source
Standard Pack
Orderable Part Number
Base part number Package Type
Form
Quantity
50
Tube
IRFS7430-7PPbF
IRFS7430TRL7PP
IRFS7430-7PPbF
D2Pak-7Pin
Tape and Reel Left
800
4.0
600
500
400
300
200
100
I
= 100A
D
Limited By Package
3.0
2.0
1.0
0.0
T
T
= 125°C
= 25°C
J
J
0
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
V
Gate -to -Source Voltage (V)
C
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
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IRFS7430-7PPbF
Absolute Maximium Rating
Symbol
Parameter
Max.
522
369
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
240
1200*
375
PD @TC = 25°C
Maximum Power Dissipation
W
W/°C
V
Linear Derating Factor
2.5
VGS
Gate-to-Source Voltage
± 20
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
-55 to + 175
300
°C
Avalanche Characteristics
EAS (Thermally limited)
EAS (Thermally limited)
IAR
EAR
764
1454
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
mJ
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
Max.
0.4
Units
Junction-to-Case
Junction-to-Ambient
RJC
RJA
°C/W
40
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
40
––– –––
V
VGS = 0V, ID = 250µA
–––
26 ––– mV/°C Reference to 25°C, ID = 2mA
V(BR)DSS/TJ
––– 0.55 0.75
––– 0.93 –––
V
V
GS = 10V, ID = 100A
GS = 6V, ID = 50A
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
m
V
VGS(th)
2.2
––– –––
3.0
3.9
1.0
VDS = VGS, ID = 250µA
DS =40 V, VGS = 0V
VDS =40V,VGS = 0V,TJ =125°C
V
IDSS
Drain-to-Source Leakage Current
µA
––– ––– 150
––– ––– 100
––– ––– -100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
V
V
GS = 20V
GS = -20V
IGSS
nA
RG
–––
2.2
–––
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A
by source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 153µH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 1403A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 54A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
*Pulse drain current is limited at 960A by source bonding technology.
2
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IRFS7430-7PPbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 10V, ID =100A
ID = 100A
176 –––
––– 305
–––
460
–––
–––
–––
–––
–––
S
Qg
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
–––
–––
84
96
VDS = 20V
nC
Qgd
VGS = 10V
Qsync
td(on)
tr
––– 209
–––
–––
28
79
VDD = 20V
ID = 30A
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 161
––– 93
–––
–––
RG= 2.7
VGS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 13975 –––
––– 2140 –––
––– 1438 –––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
pF
Effective Output Capacitance (Energy Relat-
ed)
VGS = 0V, VDS = 0V to 32V
See Fig.11
Coss eff.(ER)
––– 2620 –––
––– 3306 –––
Coss eff.(TR) Output Capacitance (Time Related)
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
D
––– ––– 522
A
––– ––– 1200*
G
ISM
S
p-n junction diode.
VSD
Diode Forward Voltage
–––
0.8
1.2
V
TJ = 25°C,IS = 100A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
–––
1.6
50
58
59
72
2.2
––– V/ns TJ = 175°C,IS =100A,VDS = 40V
–––
–––
–––
–––
–––
TJ = 25°C
VDD = 34V
IF = 100A,
trr
Reverse Recovery Time
ns
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
IRRM
TJ = 25°C
3
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IRFS7430-7PPbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
1
60µs
PULSE WIDTH
60µs
PULSE WIDTH
Tj = 25°C
Tj = 175°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
1000
100
10
2.0
I
= 100A
= 10V
D
V
GS
T
= 175°C
J
1.6
1.2
0.8
0.4
T
= 25°C
J
1
V
= 10V
DS
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
-60
-20
T
20
60
100
140
180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
14.0
1000000
100000
10000
1000
V
C
= 0V,
f = 1 MHZ
GS
I
= 100A
D
= C + C , C SHORTED
iss
gs
gd ds
12.0
10.0
8.0
C
= C
rss
gd
V
V
= 32V
DS
DS
C
= C + C
oss
ds
gd
= 20V
C
iss
6.0
C
oss
C
rss
4.0
2.0
0.0
100
0
50 100 150 200 250 300 350 400
0.1
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
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Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
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IRFS7430-7PPbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
Limited by Package
DC
10msec
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
2.5
48
Id = 2.0mA
47
2.0
1.5
1.0
0.5
0.0
46
45
44
43
42
41
40
-5
0
5
10 15 20 25 30 35 40 45
-60
-20
20
60
100
140
180
V
Drain-to-Source Voltage (V)
T
, Temperature ( °C )
DS,
J
Fig 12. Typical Coss Stored Energy
Fig 11. Drain-to–Source Breakdown Voltage
10.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
8.0
6.0
4.0
2.0
0.0
0
100
200
300
400
500
I , Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
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IRFS7430-7PPbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse width
800
700
600
500
400
300
200
100
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
TOP
BOTTOM 1.0% Duty Cycle
= 100A
Single Pulse
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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IRFS7430-7PPbF
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
16
14
12
10
8
I
= 60A
= 34V
F
V
R
T = 25°C
J
T = 125°C
J
6
ID = 250µA
ID = 1.0mA
ID = 1.0A
4
2
0
-75
-25
25
75
125
175
225
0
200
400
600
800
1000
T
, Temperature ( °C )
di /dt (A/µs)
J
F
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
14
12
10
8
700
I
= 100A
= 34V
I
= 60A
V = 34V
R
F
F
600
500
400
300
200
100
0
V
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
6
4
2
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
450
I
= 100A
F
400
350
300
250
200
150
100
50
V
= 34V
R
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
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IRFS7430-7PPbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
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IRFS7430-7PPbF
D2Pak-7Pin Package Outline (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFS7430-7PPbF
D2Pak-7Pin Part Marking Information
D2Pak-7Pin Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFS7430-7PPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
D2Pak-7Pin
MSL1
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated EAS (L =1mH) = 1454mJ on page 2
Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 54A, VGS =10V”. on page 2
11/6/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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