K3N6U1000F-C [SAMSUNG]
MASK ROM;
SAMSUNG 
K3N6V(U)1000F-C
MASK ROM DIE
32M-Bit(4Mx8/2Mx16) CMOS Mask ROM
FEATURES
•Single 3.3V/ Single 3.0V power supply
•Fast Access Time
3.3V Operation : 100ns (min)@CL=50pF
3.0V Operation : 120ns (min)@CL=100pF
•x16 or x8 configurable with BHE-pin
•TTL compatible inputs and outputs
•Three State Outputs
GENERAL PHYSICAL SPECIFICATIONS
•Backside die surface of polished bare silicon
•Typical Die Thickness = 320mm
•Typical top-level metalization : 99.3% AI + 0.2% Si + 0.5% Cu 6K Angstroms thickness
•Topside Passivation :1.5K Angstroms PEOX, 3K Angstroms SiN, 10K Angstroms Polymide
•Typical Pad Size : 100mm x 100mm
•Die Size : 6120.0mm x 4200.0mm (Including 140mm scribe line)
OPTIONS
•Bare Die : Functionally tested only
GENERAL ORDERING INFORMATION
•32Mbit
3.3V/3.0V Bare Die
K3N6V(U)1000F-C
PACKAGING OPTIONS
•Chip Trays(Waffle Pack)
DIE OUTLINE
(Top View)
(0.0000, 0.0000)
X
9
10
12
13 14
15 16 17
7
11
5
8
1
3
4
6
2
59
18
19
58
57
Y
20
21
22
56
55
K3N6V(U)1000F
PAD Diagram
54
53
23
6120mm x 4200mm
including 140mm scribe line
52
51
50
24
25
26
27
49
48
44
35
34 33 32
47 46 45
43 42 41 40 39
38
31
30 29 28
37 36
K3N6V(U)1000F-C
MASK ROM DIE
GENERAL PHYSICAL SPECIFICATIONS
Please refer to the packaged product data sheet found in the applicable SAMSUNG data book for functional and parametric specifi-
cations. For bare(C) die, these specifications are provided for reference only and SAMAUNG makes no guarantees or warranties on
die level.
BONDING INSTRUCTIONS
The 32Mb Mask ROM die has total 59 pads. Refer to the bond pad location and identification table for a complete list of bond pads
and coordinates. SAMSUNG recommends using a bond wire on each Vcc and Vss bond pad for improved noise immunity. The 32Mb
Mask ROM device operates with single 3.0V or 3.3V power supply, and all inputs and outputs are fully TTL compatible.
BONDING METHOD(Samsung Stitch Bonder)
Management Items for Bonding Machine
•Process Monitor Item
Wire Pull Test
•P.M(Preventive Maintanance)Items
Wedge Change Period
Bonding Force
Bonding Time
Bonding Power
USG Output
Wire Clamp Tention
Note) Every control limits are not concerned above items because many kinds of machines are used on user under various
condition.
Management items and Criteria for Bonding process
(They are bad parts in following cases.)
1. Die Orientation : It is bad part, if the die diverges vertically or horizontally out of Cavity Center line more than 20mil.
2. Bond width : It is bad part, if Bond ball of Bond Pad and Lead is smaller than 1.2 times of wire¢s diameter or bigger than 3 times
of it.
3. Bond Length : It is bad part, if Bond length of Bond Pad and Lead is smaller than 1.5 times of wire¢s diameter or bigger than 5
times of it.
4. Bond Off Pad : It is bad part, less than 50% of Bond is located on Open pad.
5. Bond Bridging : It is bad part, if Bond is Connected with Metal line or located on it.
6. Wire Broken : It is bad part, if wire is broken.
7. Bond Tail : It is bad part, if Bond tail of Die Pad is bigger than 2 times of wire¢s diameter.
8. Stray Wire : It is bad part, if wire is not connected with Lead and Die Cavity.
9. Tron/Necked Down Wire : It is bad part, if such damage of wire as teared, scratched, or wrinkled is bigger than a quarter of
wire¢s diameter.
10. Wire shorts
•It is bad part, if the distance from bonded wire to die¢s surface, to lead, or to other wire is shorts than wire¢s diameter.
•It is bad part, if wire is warped more than 90°.
•It is bad part, if the wire bonded on Die attath Pad is touched with an edge of die or distance between them is shorter than
wire¢s diameter.
11. Bond Pad Void : It is bad part, if Oxide exposed before or after reworking is spreaded wider than a quarter of Bond Pad¢s Sur-
face.
12 Wire Sagging : It is bad part, if any wire is damaged or bears signs of damage.
K3N6V(U)1000F-C
MASK ROM DIE
PACKING
Individual die will be packed in either anti-static trays.
•Chip Trays : A 2-inch square waffle style carrier with separate compartments for each die. Commonly referred to as a waffle pack,
each tray has a cavity size selected for the device that allows for easy loading and unloading and prevents rotation. the
tray itself is made of conductive material to reduce the danger of damage to the die from electrostatic discharge.
The chip carriers will be labeled with the follwing information :
•SAMSUNG wafer lot number
•SAMSUNG part number
•Quantity
Bond Pad #1 at Top
Die orientation in chip carries
STANDARD PROBE TESTING
SAMSUNG probes wafers at a temperature with limits guard banded to assure product performance from 0° to 70° in SAMSUNG¢s
satandard packaging. Since the packaging environment is not ensure that the junction die temperature remains within specified lim-
its.
Wafer probe consists of various functional and parametric tests of each die. Test patterns, timing, voltage margins, limits, and test
sequence are determined by individual product yields and reliability data.
SAMSUNG retains a wafer map of each wafer as part of the probe records along with a lot summary of wafer yields each lot probed.
SAMSUNG reserves the right to change the probe program at any time to improve the reliability, packaged device yield, or perfor-
mance of the product.
STORAGE AND HANDLING
SAMSUNG recommends the die be stored in a controlled environment with filtered nitrogen. The carrier should only be opened at an
ESD safe environment at times for inspection and assembly.
K3N6V(U)1000F-C
MASK ROM DIE
BOND PAD LOCATION AND IDENTIFICATION TABLE
PAD#
1
FUNCTION
A3
X
Y
PAD#
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
FUNCTION
Q14
Q6
X
Y
0.000
0.302
0.604
0.906
1.208
1.510
1.812
2.114
2.716
3.318
3.620
3.922
4.224
4.526
4.828
5.130
5.432
5.586
5.586
5.586
5.586
5.586
5.586
5.586
5.586
5.491
5.586
5.476
5.210
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
-0.246
-0.537
-0.788
-1.039
-1.352
-1.990
-2.709
-2.960
-3.220
-3.605
-3.820
-3.820
4.914
4.648
4.352
4.086
3.790
3.524
3.199
3.049
2.716
2.521
2.204
1.908
1.642
1.346
1.080
0.784
0.518
0.222
-0.044
-0.154
-0.059
-0.154
-0.154
-0.154
-0.154
-0.154
-0.154
-0.154
-0.154
-0.154
-3.820
-3.820
-3.820
-3.820
-3.820
-3.820
-3.770
-3.770
-3.770
-3.820
-3.820
-3.820
-3.820
-3.820
-3.820
-3.820
-3.820
-3.820
-3.820
-3.605
-3.220
-2.960
-2.709
-2.140
-1.990
-1.352
-1.039
-0.788
-0.537
-0.246
2
A4
3
A5
Q13
Q5
4
A6
5
A7
Q12
Q4
6
A17
A18
DNU
T
7
Vcc
Vcc
DNU
T
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
A20
A19
A8
Q11
Q3
A9
Q10
Q2
A10
A11
A12
A13
A14
A15
A16
BHE
DNU
DNU
DNU
DNU
Vss
Vss
Q15/A-1
Q7
Q9
Q1
Q8
Q0
OE
Vss
Vss
DNU
DNU
DNU
DNU
DNU
CE
A0
A1
A2
1. DNU stands for not use
2. Reference to the center of each pad from center of Bond Pad #1
3. All units are in milimeters
4. In case of using byte mode you should be set BHE-pad = VIL (A-1 of PAD #21 is LSB Address)
5. T stands for Tie-bar GND Bonding
PAD DESCRIPTIONS
PAD NAME
A0 ~ A20
DESCRIPTIONS
Address Inputs
Q0 ~ Q14
Data Outputs
Output 15(Word mode)/
LSB Address(Byte mode)
Q15/A-1
BHE
CE
Word/Byte selection
Chip enable
Output enable
Power Supply
Ground
OE
Vcc
Vss
DNU
Do not use
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