K4D553235F-GC22 [SAMSUNG]
Synchronous Graphics RAM, 8MX32, 0.45ns, CMOS, PBGA144, FBGA-144;
| 型号： | K4D553235F-GC22 |
| 厂家： | 
SAMSUNG |
| 描述： | Synchronous Graphics RAM, 8MX32, 0.45ns, CMOS, PBGA144, FBGA-144 时钟 动态存储器 内存集成电路 |
| 文件： | 总18页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Target Spec
256M GDDR SDRAM
K4D553235F-GC
256Mbit GDDR SDRAM
2M x 32Bit x 4 Banks
Graphic Double Data Rate
Synchronous DRAM
with Bi-directional Data Strobe and DLL
(144-Ball FBGA)
Revision 0.1
June 2004
Samsung Electronics reserves the right to change products or specification without notice.
- 1 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
Revision History
Revision 0.1 (June 16, 2004) - Target Spec
• Defined target specification
Revision 0.0 (May 7, 2004) - Target Spec
• Defined target specification
- 2 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM
with Bi-directional Data Strobe and DLL
FEATURES
• 1.8V ± 0.1V power supply for device operation
• 1.8V ± 0.1V power supply for I/O interface
• SSTL_18 compatible inputs/outputs
• 4 banks operation
• No Wrtie-Interrupted by Read Function
• 4 DQS’s ( 1DQS / Byte )
• Data I/O transactions on both edges of Data strobe
• DLL aligns DQ and DQS transitions with Clock transition
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• DM for write masking only
• MRS cycle with address key programs
-. Read latency 4, 5 and 6 (clock)
-. Burst length (2, 4 and 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive
going edge of the system clock
• Auto & Self refresh
• 32ms refresh period (4K cycle)
• 144-Ball FBGA
• Differential clock input
• Maximum clock frequency up to 500MHz
• Maximum data rate up to 1.0Gbps/pin
ORDERING INFORMATION
Part NO.
Max Freq.
500MHz
450MHz
400MHz
350MHz
300MHz
Max Data Rate
1000Mbps/pin
900Mbps/pin
800Mbps/pin
700Mbps/pin
600Mbps/pin
Interface
Package
K4D553235F-GC20
K4D553235F-GC22
K4D553235F-GC25
K4D553235F-GC2A
K4D553235F-GC33
SSTL_18
144-Ball FBGA
* K4D553235F-VC is the Lead Free package part number.
*The operating voltage of K4D553235F-GC20/22 are VDD/VDDQ=2.0V+0.1V
GENERAL DESCRIPTION
FOR 2M x 32Bit x 4 Bank DDR SDRAM
The K4D553235F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by
32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 4.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of
operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety
of high performance memory system applications.
- 3 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
PIN CONFIGURATION (Top View)
2
3
4
5
6
7
8
9
10
11
12
13
B
C
D
E
F
DQS0
DM0
VSSQ
DQ3
DQ2
DQ0
DQ31
DQ29
DQ28
VSSQ
DM3
DQS3
DQ4
DQ6
VDDQ
DQ5
NC
VSSQ
VDD
VDDQ
VDDQ
NC
VDDQ
VSSQ
VSS
DQ1
VDDQ
VDD
VDDQ
VDD
DQ30
VSSQ
VDDQ
VSSQ
VSS
NC
VDDQ
DQ26
VDDQ
DQ15
DQ13
DM1
DQ11
DQ9
DQ27
DQ25
DQ24
DQ14
DQ12
DQS1
DQ10
DQ8
VSSQ
VSSQ
VDD
DQ7
VDDQ
DQ16
DQ18
DM2
DQ20
DQ23
WE
VSSQ
VSS
VSS
VSS
VSS
VSS
VSSQ
VSS
DQ17
DQ19
DQS2
DQ21
DQ22
CAS
VSSQ
VSSQ
VSSQ
VSSQ
VSSQ
VSS
VSSQ
VSSQ
VSSQ
VSSQ
VSSQ
VSS
VDDQ
VDDQ
NC
Thermal Thermal Thermal Thermal
VSS VSS VSS VSS
G
H
J
Thermal Thermal Thermal Thermal
VSS VSS VSS VSS
Thermal Thermal Thermal Thermal
VSS VSS VSS VSS
Thermal Thermal Thermal Thermal
VDDQ
VDDQ
VDD
NC
VDDQ
VDDQ
VDD
VSS
A10
A2
VSS
VDD
A11
A3
VSS
VDD
A9
VSS
RFU1
A5
K
L
NC
NC
RAS
NC
BA1
RFU2
A7
CK
CK
MCL
M
N
CS
NC
BA0
A0
A1
A4
A6
A8/AP
CKE
VREF
NOTE:
1. RFU1 is reserved for A12
2. RFU2 is reserved for BA2
3. VSS Thermal balls are optional
PIN DESCRIPTION
CK,CK
CKE
CS
Differential Clock Input
Clock Enable
BA0, BA1
A0 ~A11
Bank Select Address
Address Input
Data Input/Output
Power
Chip Select
DQ0 ~ DQ31
VDD
RAS
CAS
WE
Row Address Strobe
Column Address Strobe
Write Enable
VSS
Ground
VDDQ
VSSQ
NC
Power for DQ’s
Ground for DQ’s
No Connection
Must Connect Low
DQS
DM
Data Strobe
Data Mask
RFU
Reserved for Future Use
MCL
- 4 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
INPUT/OUTPUT FUNCTIONAL DESCRIPTION
Symbol
Type
Function
The differential system clock Input.
CK, CK*1
Input
Input
Input
All of the inputs are sampled on the rising edge of the clock except
DQ’s and DM’s that are sampled on both edges of the DQS.
Activates the CK signal when high and deactivates the CK signal
when low. By deactivating the clock, CKE low indicates the Power
down mode or Self refresh mode.
CKE
CS
CS enables the command decoder when low and disabled the com-
mand decoder when high. When the command decoder is disabled,
new commands are ignored but previous operations continue.
Latches row addresses on the positive going edge of the CK with
RAS low. Enables row access & precharge.
RAS
CAS
WE
Input
Input
Input
Latches column addresses on the positive going edge of the CK with
CAS low. Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Data input and output are synchronized with both edge of DQS.
DQS0 for DQ0 ~ DQ7, DQS1 for DQ8 ~ DQ15, DQS2 for DQ16 ~ DQ23,
DQS3 for DQ24 ~ DQ31.
DQS0 ~ DQS3
DM0 ~ DM3
Input/Output
Input
Data In mask. Data In is masked by DM Latency=0 when DM is high
in burst write. DM0 for DQ0 ~ DQ7, DM1 for DQ8 ~ DQ15, DM2 for
DQ16 ~ DQ23, DM3 for DQ24 ~ DQ31.
DQ0 ~ DQ31
BA0, BA1
Input/Output
Input
Data inputs/Outputs are multiplexed on the same pins.
Selects which bank is to be active.
Row/Column addresses are multiplexed on the same pins.
Row addresses : RA0 ~ RA11, Column addresses : CA0 ~ CA7, CA9
Column address CA8 is used for auto precharge.
A0 ~ A11
Input
VDD/VSS
Power Supply
Power Supply
Power Supply
Power and ground for the input buffers and core logic.
Isolated power supply and ground for the output buffers to provide
improved noise immunity.
VDDQ/VSSQ
VREF
Reference voltage for inputs, used for SSTL interface.
NC/RFU
No connection/
This pin is recommended to be left "No connection" on the device
Reserved for future use
MCL
Must Connect Low
Must connect low
*1 : The timing reference point for the differential clocking is the cross point of CK and CK.
For any applications using the single ended clocking, apply VREF to CK pin.
- 5 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
BLOCK DIAGRAM (1Mbit x 32I/O x 4 Bank)
32
Intput Buffer
LWE
CK, CK
Data Input Register
Serial to parallel
LDMi
Bank Select
64
2Mx32
2Mx32
2Mx32
2Mx32
64
32
x32
DQi
CK,CK
ADDR
Column Decoder
Latency & Burst Length
Data Strobe
(DQS0~DQS3)
Programming Register
LWCBR
DLL
LCKE
LRAS LCBR
LWE
LCAS
CK,CK
LDMi
Timing Register
CK,CK
CKE
CS
RAS
CAS
WE
DMi
- 6 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
FUNCTIONAL DESCRIPTION
• Power-Up Sequence
DDR SDRAMs must be powered up and initialized in a predefined manner to prevent undefined operations.
1. Apply power and keep CKE at low state (All other inputs may be undefined)
- Apply VDD before VDDQ .
- Apply VDDQ before VREF & VTT
2. Start clock and maintain stable condition for minimum 200us.
3. The minimum of 200us after stable power and clock(CK,CK ), apply NOP and take CKE to be high .
4. Issue precharge command for all banks of the device.
5. Issue a EMRS command to enable DLL
*1
6. Issue a MRS command to reset DLL. The additional 200 clock cycles are required to lock the DLL.
*1,2 7. Issue precharge command for all banks of the device.
8. Issue at least 2 or more auto-refresh commands.
9. Issue a mode register set command with A8 to low to initialize the mode register.
*1 The additional 200cycles of clock input is required to lock the DLL after enabling DLL.
*2 Sequence of 6&7 is regardless of the order
Power up & Initialization Sequence
CK,CK
tRP
tMRD.
tRFC
tRFC
tMRD
tRP
tMRD
Command
precharge
ALL Banks
MRS
DLL Reset
precharge
ALL Banks
1st Auto
Refresh
2nd Auto
Refresh
Mode
Register Set
Any
Command
EMRS
200 Clock min.
Inputs must be
stable for 200us
* When the operating frequency is changed, DLL reset should be required again.
After DLL reset again, the minimum 200 cycles of clock input is needed to lock the DLL.
- 7 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
MODE REGISTER SET(MRS)
The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs CAS latency,
addressing mode, burst length, test mode, DLL reset and various vendor specific options to make DDR SDRAM useful for
variety of different applications. The default value of the mode register is not defined, therefore the mode register must be
written after EMRS setting for proper operation. The mode register is written by asserting low on CS, RAS, CAS and
WE(The DDR SDRAM should be in active mode with CKE already high prior to writing into the mode register). The state of
address pins A0 ~ A11 and BA0, BA1 in the same cycle as CS, RAS, CAS and WE going low is written in the mode register.
Minimum two clock cycles are requested to complete the write operation in the mode register. The mode register contents
can be changed using the same command and clock cycle requirements during operation as long as all banks are in the
idle state. The mode register is divided into various fields depending on functionality. The burst length uses A0 ~ A2,
addressing mode uses A3, CAS latency(read latency from column address) uses A4 ~ A6. A7 is used for test mode. A8 is
used for DLL reset. A7,A8, BA0 and BA1 must be set to low for normal MRS operation. Refer to the table for specific codes
for various burst length, addressing modes and CAS latencies.
Address Bus
BA1
BA0
0
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Mode Register
RFU
RFU
DLL
TM
CAS Latency
BT
Burst Length
Burst Type
A3
DLL
Test Mode
A7
Type
A8
0
DLL Reset
No
mode
0
1
Sequential
Interleave
0
1
Normal
Test
1
Yes
0
Burst Length
Burst Type
CAS Latency
A2
A1
A0
BA0
0
An ~ A0
MRS
Sequential Interleave
A6 A5 A4 Latency
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved
2
Reserved
2
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved
Reserved
Reserved
Reserved
4
1
EMRS
4
4
8
8
* RFU(Reserved for future use)
should stay "0" during MRS
cycle.
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
5
6
Reserved
MRS Cycle
0
1
2
6
10
11
12
CK, CK
Precharge
All Banks
Any
Command
Command
NOP
NOP
NOP
MRS
NOP
NOP
NOP
tMRD=4 tCK
tRP
*1 : MRS can be issued only at all banks precharge state.
*2 : Minimum tRP is required to issue MRS command.
- 8 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
EXTENDED MODE REGISTER SET(EMRS)
The extended mode register stores the data for enabling or disabling DLL and selecting output driver
strength. The default value of the extended mode register is not defined, therefore the extened mode register
must be written after power up for enabling or disabling DLL. The extended mode register is written by assert-
ing low on CS, RAS, CAS, WE and high on BA0(The DDR SDRAM should be in all bank precharge with CKE
already high prior to writing into the extended mode register). The state of address pins A0, A2 ~ A5, A7 ~ A11
and BA1 in the same cycle as CS, RAS, CAS and WE going low are written in the extended mode register. A1
and A6 are used for setting driver strength to normal, weak or matched impedance. Two clock cycles are
required to complete the write operation in the extended mode register. The mode register contents can be
changed using the same command and clock cycle requirements during operation as long as all banks are in
the idle state. A0 is used for DLL enable or disable. "High" on BA0 is used for EMRS. All the other address
pins except A0,A1,A6 and BA0 must be set to low for proper EMRS operation. Refer to the table for specific
codes.
Address Bus
BA1
BA0
1
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Extended
Mode Register
RFU
RFU
D.I.C
RFU
D.I.C DLL
BA0
0
An ~ A0
MRS
A0
0
DLL Enable
A6 A1
Output Driver Impedence Control
Enable
Disable
0
0
1
1
0
1
0
1
Full
Weak
N/A
100%
60%
1
EMRS
1
Do not use
30%
Matched
*1 : RFU(Reserved for future use) should stay "0" during EMRS cycle.
Figure 7. Extended Mode Register set
- 9 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Symbol
VIN, VOUT
VDD
Value
Unit
-0.5 ~ 3.6
-1.0 ~ 3.6
-0.5 ~ 3.6
-55 ~ +150
3.3
V
V
VDDQ
TSTG
V
°C
W
mA
Power dissipation
PD
Short circuit current
IOS
50
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
POWER & DC OPERATING CONDITIONS(SSTL In/Out)
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 65°C)
Parameter
Device Supply voltage
Output Supply voltage
Reference voltage
Symbol
VDD
Min
1.7
Typ
Max
Unit
V
Note
1.8
1.9
1.9
1
VDDQ
VREF
Vtt
1.7
1.8
V
1
0.49*VDDQ
VREF-0.04
VREF+0.15
-0.30
-
0.51*VDDQ
VREF+0.04
VDDQ+0.30
VREF-0.15
-
V
2
Termination voltage
VREF
V
3
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
VIH(DC)
VIL(DC)
VOH
-
-
-
-
-
-
V
4
V
5
Vtt+0.76
-
V
IOH=-15.2mA, 7
VOL
Vtt-0.76
5
V
IOL=+15.2mA, 7
IIL
-5
uA
uA
6
6
IOL
-5
5
Note :
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VREF is expected to equal 0.50*VDDQ of the transmitting device and to track variations in the DC level of the same. Peak to
peak noise on the VREF may not exceed + 2% of the DC value.
3. Vtt of the transmitting device must track VREF of the receiving device.
4. VIH(max.)= VDDQ +1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
5. VIL(mim.)= -1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
6. For any pin under test input of 0V < VIN < VDD is acceptable. For all other pins that are not under test VIN=0V.
7. Output logic high voltage and low voltage is depend on output channel condition.
- 10 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
Version
Parameter
Symbol
Test Condition
Unit Note
-20
-22
-25
-2A
-33
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
Operating Current
(One Bank Active)
ICC1
TBD
TBD
TBD
TBD
TBD
mA
mA
mA
mA
mA
mA
Precharge Standby Current
in Power-down mode
ICC2P
ICC2N
ICC3P
ICC3N
ICC4
CKE ≤ VIL(max), tCC= tCC(min)
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
Precharge Standby Current
in Non Power-down mode
Active Standby Current
power-down mode
CKE ≤ VIL(max), tCC= tCC(min)
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
Active Standby Current
in Non Power-down mode
Operating Current
( Burst Mode)
IOL=0mA ,tCC= tCC(min),
Page Burst, All Banks activated.
Refresh Current
ICC5
ICC6
ICC7
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
mA
mA
1
tRC ≥ tRFC(min)
CKE ≤ 0.2V
Self Refresh Current
Operating Current
(4Bank interleaving)
Burst Length=4 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
TBD
TBD
TBD
TBD
TBD
mA
Note : 1 Refresh period is 32ms
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 65°C)
Parameter
Symbol
VIH
Min
VREF+0.35
-
Typ
Max
Unit
Note
Input High (Logic 1) Voltage ;DQ
-
-
-
-
-
V
V
V
V
Input Low (Logic 0) Voltage; DQ
VIL
VREF-0.35
VDDQ+0.6
Clock Input Differential Voltage; CK and CK
Clock Input Crossing Point Voltage; CK and CK
VID
0.7
1
2
VIX
0.5*VDDQ-0.2
0.5*VDDQ+0.2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
- 11 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
AC OPERATING TEST CONDITIONS (TA= 0 to 65°C)
Parameter
Value
Unit
V
Note
Input reference voltage for CK(for single ended)
CK and CK signal maximum peak swing
CK signal minimum slew rate
0.50*VDDQ
1
1.5
V
1.0
VREF+0.4/VREF-0.4
VREF
V/ns
V
Input Levels(VIH/VIL)
Input timing measurement reference level
Output timing measurement reference level
Output load condition
V
Vtt
V
See Fig.1
Note 1 : In case of differential clocks(CK and CK ), input reference voltage for clock is a CK and CK’s crossing point.
Vtt=0.5*VDDQ
RT=50Ω
Output
Z0=50Ω
VREF
=0.5*VDDQ
CLOAD=30pF
(Fig. 1) Output Load Circuit
CAPACITANCE (TA= 25°C, f=1MHz)
Parameter
Input capacitance( CK, CK )
Symbol
CIN1
Min
1.0
Max
5.0
Unit
pF
pF
Input capacitance(A0~A11, BA0~BA1)
CIN2
1.0
4.0
Input capacitance
( CKE, CS, RAS,CAS, WE )
CIN3
1.0
4.0
pF
Data & DQS input/output capacitance(DQ0~DQ31)
Input capacitance(DM0 ~ DM3)
COUT
CIN4
1.0
1.0
6.5
6.5
pF
pF
DECOUPLING CAPACITANCE GUIDE LINE
Recommended decoupling capacitance added to power line at board.
Parameter
Symbol
CDC1
Value
Unit
Decoupling Capacitance between VDD and VSS
Decoupling Capacitance between VDDQ and VSSQ
0.1 + 0.01
0.1 + 0.01
uF
uF
CDC2
Note :
1. VDD and VDDQ pins are separated each other.
All VDD pins are connected in chip. All VDDQ pins are connected in chip.
2. VSS and VSSQ pins are separated each other
All VSS pins are connected in chip. All VSSQ pins are connected in chip.
- 12 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
AC CHARACTERISTICS (I)
-20
-22
-25
-2A
-33
Parameter
Symbol
Unit Note
Min
-
Max
Min
-
Max
Min
-
Max
Min
-
Max
Min
-
Max
CL=3
CL=4
CL=5
CL=6
ns
ns
ns
ns
-
-
-
-
3.3
-
CK cycle time
tCK
5.0
5.0
10.0
10.0
10.0
-
-
2.5
-
2.86
-
2.0
0.45
0.45
-0.35
-0.35
-
2.2
0.45
0.45
-0.45
-0.45
-
-
CK high level width
CK low level width
tCH
0.55
0.55
0.35
0.35
0.25
1.1
0.6
1.15
-
0.55
0.55
0.45
0.45
0.28
1.1
0.6
1.15
-
0.45
0.45
-0.45
-0.45
-
0.55
0.55
0.45
0.45
0.28
1.1
0.6
1.15
-
0.45
0.45
-0.55
-0.55
-
0.55
0.55
0.55
0.55
0.35
1.1
0.6
1.15
-
0.45
0.45
-0.55
-0.55
-
0.55 tCK
0.55 tCK
tCL
DQS out access time from CK
Output access time from CK
Data strobe edge to Dout edge
Read preamble
tDQSCK
tAC
0.55
0.55
0.35
1.1
ns
ns
tDQSQ
tRPRE
tRPST
tDQSS
tWPRES
tWPREH
tWPST
tDQSH
tDQSL
tIS
ns
1
0.9
0.4
0.85
0
0.9
0.4
0.85
0
0.9
0.4
0.85
0
0.9
0.4
0.85
0
0.9
0.4
0.85
0
tCK
tCK
Read postamble
0.6
CK to valid DQS-in
1.15 tCK
DQS-In setup time
-
-
ns
DQS-in hold time
0.35
0.4
0.45
0.45
0.5
0.5
0.25
0.25
-
0.35
0.4
0.45
0.45
0.55
0.55
0.27
0.27
-
0.35
0.4
0.45
0.45
0.6
0.6
0.3
0.3
-
0.35
0.4
0.45
0.45
0.8
0.8
0.35
0.35
-
0.35
0.4
0.45
0.45
0.8
0.8
0.35
0.35
tCK
tCK
DQS write postamble
0.6
0.55
0.55
-
0.6
0.55
0.55
-
0.6
0.55
0.55
-
0.6
0.55
0.55
-
0.6
DQS-In high level width
DQS-In low level width
Address and Control input setup
Address and Control input hold
DQ and DM setup time to DQS
DQ and DM hold time to DQS
0.55 tCK
0.55 tCK
-
-
-
-
ns
ns
ns
ns
tIH
-
-
-
-
tDS
-
-
-
-
tDH
-
-
-
-
tCLmin
or
tCHmin
-
tCLmin
or
tCHmin
-
tCLmin
or
tCHmin
-
tCLmin
or
tCHmin
-
tCLmin
or
tCHmin
-
Clock half period
tHP
-
-
-
-
-
ns
1
1
Data Hold skew factor
tQHS
tQH
0.4
-
0.4
-
0.4
-
0.4
-
0.4
-
ns
ns
tHP-
tQHS
tHP-
tQHS
tHP-
tQHS
tHP-
tQHS
tHP-
tQHS
Data output hold time from DQS
Simplified Timing @ BL=2, CL=4
tCH
tCL
tCK
8
0
1
2
3
4
5
6
7
CK, CK
tIS
tIH
CS
tDQSCK
tDQSS
tWPREH
tDQSH
tDQSL
tRPST
tRPRE
DQS
tWPRES
tDQSQ
tDS tDH
tAC
DQ
DM
Qa2
Qa1
Db0
Db1
COMMAND
WRITEB
READA
- 13 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
Note 1 :
- The JEDEC DDR specification currently defines the output data valid window(tDV) as the time period when the data
strobe and all data associated with that data strobe are coincidentally valid.
- The previously used definition of tDV(=0.35tCK) artificially penalizes system timing budgets by assuming the worst case
output vaild window even then the clock duty cycle applied to the device is better than 45/55%
- A new AC timing term, tQH which stands for data output hold time from DQS is difined to account for clock duty cycle
variation and replaces tDV
- tQHmin = tHP-X where
. tHP=Minimum half clock period for any given cycle and is defined by clock high or clock low time(tCH,tCL)
. X=A frequency dependent timing allowance account for tDQSQmax
tQH Timing (CL4, BL2)
tHP
3
4
0
1
2
5
CK, CK
CS
DQS
tDQSQ(max)
tQH
tDQSQ(max)
Qa0
Qa1
DQ
COMMAND
READA
Power Down Timing
CK, CK
tIS
CKE
3tCK
tIS
Command
VALID
NOP
NOP
NOP
NOP
NOP
NOP
VALID
Enter Power Down mode
(Read or Write operation
must not be in progress)
Exit Powr Down mode
- 14 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
AC CHARACTERISTICS (II)
-20
-22
-25
-2A
-33
Parameter
Symbol
Unit Note
Min
46
50
32
14
10
14
Max
Min
46.2
50.6
30.8
15.4
11
Max
Min
45
50
30
15
10
15
Max
Min
45.8
51.5
28.6
16.5
11.4
16.5
Max
Min
49.5
56.1
33
Max
Row cycle time
tRC
-
-
-
-
-
ns
ns
ns
ns
ns
ns
Refresh row cycle time
Row active time
tRFC
-
-
-
-
-
tRAS
100K
100K
100K
100K
100K
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
tRCDRD
tRCDWR
tRP
-
-
-
-
-
-
-
-
-
-
-
-
16.5
11.4
16.5
-
-
-
15.4
Last data in to Row precharge
@Normal Precharge
tWR
14
14
28
-
-
-
15.4
15.4
30.8
-
-
-
15
15
30
-
-
-
16.5
16.5
33
-
-
-
16.5
16.5
33
-
-
-
ns
ns
ns
1
1
Last data in to Row precharge
@Auto Precharge
tWR_A
tDAL
Auto precharge write recovery +
Precharge
Row active to Row active
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Exit self refresh to read command
tRRD
tCDLR
tCCD
tMRD
tXSR
5
2
-
-
-
-
-
5
2
-
-
-
-
-
4
2
-
-
-
-
-
4
2
-
-
-
-
-
3
2
-
-
-
-
-
tCK
tCK
tCK
tCK
tCK
1
1
1
1
1
1
5
5
4
3
3
200
200
200
200
200
3tCK+
tIS
3tCK+
tIS
3tCK+
tIS
3tCK+
tIS
3tCK+
tIS
Power down exit time
Refresh interval time
tPDEX
tREF
-
-
-
-
-
-
-
-
-
-
ns
us
7.8
7.8
7.8
7.8
7.8
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
- 15 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
AC CHARACTERISTICS (II)
K4D553235F-GC20
(Unit : Number of Clock)
Frequency
500MHz ( 2.0ns )
450MHz ( 2.2ns )
Cas Latency
tRC
23
21
tRFC
25
23
tRAS
16
14
tRCDRD tRCDWR
tRP
7
7
tRRD
5
5
tDAL
14
14
Unit
tCK
tCK
6
6
7
7
5
5
K4D553235F-GC22
Frequency
Cas Latency
tRC
tRFC
tRAS
tRCDRD tRCDWR
tRP
tRRD
tDAL
Unit
450MHz ( 2.2ns )
6
21
23
14
7
5
7
5
14
tCK
K4D553235F-GC25
Frequency
400MHz ( 2.5ns )
350MHz ( 2.86ns )
300MHz ( 3.3ns )
Cas Latency
tRC
18
16
tRFC
20
18
tRAS
12
10
tRCDRD tRCDWR
tRP
6
6
tRRD
tDAL
12
12
Unit
tCK
tCK
tCK
5
5
4
6
6
5
4
4
3
4
4
3
15
17
10
5
10
K4D553235F-GC2A
Frequency
350MHz ( 2.86ns )
300MHz ( 3.3ns )
Cas Latency
tRC
16
15
tRFC
18
17
tRAS
10
10
tRCDRD tRCDWR
tRP
6
5
tRRD
4
3
tDAL
12
10
Unit
tCK
tCK
5
4
6
5
4
3
K4D553235F-GC33
Frequency
Unit
Cas Latency
tRC
tRFC
tRAS
tRCDRD tRCDWR
tRP
tRRD
tDAL
300MHz ( 3.3ns )
4
15
17
10
5
3
5
3
10
tCK
- 16 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
Simplified Timing(2) @ BL=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
CK, CK
BA[1:0]
BAa
BAa
BAa
BAa
BAb BAa
Rb
BAb
A8/AP
ADDR
Ra
Ra
a
(A0~A7,
A9,A10)
Ca
Ca
Rb
Cb
Ra
Ra
WE
DQS
DQ
Da0
Da1 Da2 Da3 Db0 Db1 Db2 Db3
Da0 Da1 Da2 Da3
DM
COMMAND
ACTIVEA
WRITEA
PRECH
ACTIVEA
ACTIVEB WRITEA
WRITEB
tRCD
tRAS
tRP
tRC
tRRD
Normal Write Burst
(@ BL=4)
Multi Bank Interleaving Write Burst
(@ BL=4)
- 17 -
Rev 0.1 (June 2004)
Target Spec
256M GDDR SDRAM
K4D553235F-GC
PACKAGE DIMENSIONS (144-Ball FBGA)
A1 INDEX MARK
12.0
12.0
<Top View>
0.8x11=8.8
A1 INDEX MARK
0.10 Max
0.8
0.8
B
C
D
E
F
G
H
J
0.45 ± 0.05
0.40
K
L
M
N
13 12 11 10 9
8 7 6 5 4 3 2
0.35 ± 0.05
0.40
1.40 Max
<Bottom View>
Unit : mm
- 18 -
Rev 0.1 (June 2004)
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