K4E641612C-TL60 [SAMSUNG]

4M x 16bit CMOS Dynamic RAM with Extended Data Out; 4M X 16位CMOS动态随机存储器与扩充数据输出
K4E641612C-TL60
型号: K4E641612C-TL60
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

4M x 16bit CMOS Dynamic RAM with Extended Data Out
4M X 16位CMOS动态随机存储器与扩充数据输出

存储 内存集成电路 光电二极管 动态存储器
文件: 总36页 (文件大小:885K)
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K4E641612C-TL600

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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0 SAMSUNG

K4E641612C-TL60M0

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50

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0 SAMSUNG

K4E641612C-TL60R0

暂无描述

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0 SAMSUNG

K4E641612C-TL60TN

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50

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0 SAMSUNG

K4E641612C-TL60TN

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50

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0 SAMSUNG

K4E641612D

CMOS DRAM

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20 SAMSUNG

K4E641612D

CMOS DRAM

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32 SAMSUNG

K4E641612D-TC60

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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2 SAMSUNG

K4E641612E-TI450

EDO DRAM, 4MX16, 45ns, CMOS, PDSO50,

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0 SAMSUNG

K4E641612E-TI450

EDO DRAM, 4MX16, 45ns, CMOS, PDSO50,

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0 SAMSUNG

K4E641612E-TI60

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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-
0 SAMSUNG

K4E641612E-TI60

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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0 SAMSUNG

K4E641612E-TI600

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50,

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0 SAMSUNG

K4E641612E-TI600

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50,

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0 SAMSUNG

K4E641612E-TL50

EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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0 SAMSUNG