K4N1G164QQ-HC25T [SAMSUNG]

Cache DRAM Module, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84;
K4N1G164QQ-HC25T
型号: K4N1G164QQ-HC25T
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Cache DRAM Module, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84

时钟 动态存储器 内存集成电路
文件: 总66页 (文件大小:1441K)
下载:  下载PDF数据表文档文件

K4N25

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

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46 KODENSHI

K4N25A

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

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22 KODENSHI

K4N25G

Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

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30 KODENSHI

K4N25H

Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

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29 KODENSHI

K4N26

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

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47 KODENSHI

K4N26

Transistor Output Optocoupler, 1-Element, 1500V Isolation

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0 KODENSHI

K4N26323AE

128Mbit GDDR2 SDRAM

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17 SAMSUNG

K4N26323AE

128Mbit GDDR2 SDRAM

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20 SAMSUNG

K4N26323AE-GC20

128Mbit GDDR2 SDRAM

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19 SAMSUNG

K4N26323AE-GC20

128Mbit GDDR2 SDRAM

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29 SAMSUNG

K4N26323AE-GC200

DDR DRAM, 4MX32, CMOS, PBGA144, FBGA-144

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0 SAMSUNG

K4N26323AE-GC22

128Mbit GDDR2 SDRAM

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-
25 SAMSUNG

K4N26323AE-GC22

128Mbit GDDR2 SDRAM

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18 SAMSUNG

K4N26323AE-GC25

128Mbit GDDR2 SDRAM

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11 SAMSUNG

K4N26323AE-GC25

128Mbit GDDR2 SDRAM

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18 SAMSUNG