K5L5628JTM-DH18 [SAMSUNG]

256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM; 256M位( 16M ×16)同步突发,多行NOR闪存/ 128M位( 8M ×16)同步突发UtRAM
K5L5628JTM-DH18
型号: K5L5628JTM-DH18
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
256M位( 16M ×16)同步突发,多行NOR闪存/ 128M位( 8M ×16)同步突发UtRAM

闪存 存储 内存集成电路 静态存储器
文件: 总98页 (文件大小:1567K)
下载:  下载PDF数据表文档文件

K5-M8

Heatsink For stud devices

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270 SEMIKRON

K5-N

Adjustable Type Coils

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28 MITSUMI

K5-N1

Adjustable Type Coils

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28 MITSUMI

K5N1229ACD-BQ12

512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

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28 SAMSUNG

K5P2880YCM

Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM

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94 SAMSUNG

K5P2881BCM-F0700

Memory Circuit, 16MX8, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, FBGA-69

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0 SAMSUNG

K5P5781FCM-F055

Memory Circuit, Flash+SRAM, CMOS, PBGA69

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0 SAMSUNG

K5P5781FCM-F0550

Memory Circuit, 16MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, FBGA-69

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0 SAMSUNG

K5P6480YCM-T085

Memory Circuit, 8MX8, CMOS, PBGA69, 8 X 13 MM, 0.80 MM PITCH, TBGA-69

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0 SAMSUNG

K5Q6432YCM-T010

Memory Circuit, Flash+PSRAM, 8MX8, CMOS, PBGA69, 8 X 13 MM, 0.80 MM PITCH, TBGA-69

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0 SAMSUNG

K5-R2

Adjustable Type Coils

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70 MITSUMI

K5-S

Adjustable Type Coils

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37 MITSUMI

K5-S2

Adjustable Type Coils

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24 MITSUMI

K5S3216Y0A-T370

Memory Circuit, PSRAM+SRAM, 2MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, TBGA-69

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0 SAMSUNG

K5S3216Y0A-T385

Memory Circuit, PSRAM+SRAM, 2MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, TBGA-69

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0 SAMSUNG