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K6R1008V1B-TI8 [SAMSUNG]

Standard SRAM, 128KX8, 8ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32;
K6R1008V1B-TI8
型号： K6R1008V1B-TI8
厂家： SAMSUNG    SAMSUNG
描述：

Standard SRAM, 128KX8, 8ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32

静态存储器 光电二极管 内存集成电路
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Preliminary  
PRELIMINARY  
CMOS SRAM  
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P  
Document Title  
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev.1.0  
History  
Draft Data  
Remark  
Initial release with Design Target.  
Apr. 1st, 1997  
Jun. 1st, 1997  
Design Target  
Preliminary  
Release to Preliminary Data Sheet.  
1.1. Replace Design Target to Preliminary.  
Rev.2.0  
Release to Final Data Sheet.  
Feb. 25th, 1998  
Final  
2.1. Delete Preliminary.  
2.2. Delete 32-SOJ-300 package.  
2.3. Add Capacitive load of the test environment in A.C test load.  
2.4. Change D.C characteristics.  
Previous spec.  
(8/10/12ns part)  
160/150/140mA  
30mA  
Changed spec.  
Items  
(8/10/12ns part)  
160/155/150mA  
50mA  
ICC  
ISB  
Rev. 2.1  
Aug. 4th, 1998  
Final  
Change Standby and Data Retention Current for L-ver.  
Items  
ISB1  
Previous spec.  
Changed spec.  
0.7mA  
0.5mA  
IDR at 3.0V  
IDR at 2.0V  
0.4mA  
0.3mA  
0.5mA  
0.4mA  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 2.1  
August 1998  
- 1 -  
Preliminary  
PRELIMINARY  
CMOS SRAM  
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P  
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)  
FEATURES  
• Fast Access Time 8,10,12ns(Max.)  
• Low Power Dissipation  
GENERAL DESCRIPTION  
The K6R1008V1B is a 1,048,576-bit high-speed Static Ran-  
dom Access Memory organized as 131,072 words by 8 bits.  
The K6R1008V1B uses 8 common input and output lines and  
has an output enable pin which operates faster than address  
access time at read cycle. The device is fabricated using SAM-  
SUNG¢s advanced CMOS process and designed for high-  
speed circuit technology. It is particularly well suited for use in  
Standby (TTL)  
(CMOS) : 5mA(Max.)  
0.7mA(Max.) - L-Ver. only  
Operating K6R1008V1B-8 : 160mA(Max.)  
K6R1008V1B-10 : 155mA(Max.)  
K6R1008V1B-12 : 150mA(Max.)  
• Single 3.3±0.3V Power Supply  
• TTL Compatible Inputs and Outputs  
• Fully Static Operation  
: 50mA(Max.)  
high-density  
high-speed  
system  
applications.  
The  
K6R1008V1B is packaged in a 400mil 32-pin plastic SOJ or  
TSOP2 forward.  
- No Clock or Refresh required  
• Three State Outputs  
ORDERING INFORMATION  
• 2V Minimum Data Retention ; L-Ver. only  
• Center Power/Ground Pin Configuration  
• Standard Pin Configuration  
K6R1008V1B-C8/C10/C12  
K6R1008V1B-I8/I10/I12  
Commercial Temp.  
Industrial Temp.  
K6R1008V1B-J : 32-SOJ-400  
K6R1008V1B-T : 32-TSOP2-400CF  
PIN CONFIGURATION(Top View)  
A0  
A1  
1
2
3
4
5
6
7
8
9
32 A16  
31 A15  
30 A14  
29 A13  
28 OE  
27 I/O8  
26 I/O7  
25 Vss  
24 Vcc  
23 I/O6  
22 I/O5  
21 A12  
20 A11  
19 A10  
18 A9  
17 A8  
A2  
FUNCTIONAL BLOCK DIAGRAM  
A3  
CS  
I/O1  
I/O2  
Vcc  
Vss  
Clk Gen.  
Pre-Charge Circuit  
A0  
A1  
A2  
A3  
A4  
SOJ/  
TSOP2  
Memory Array  
256 Rows  
512x8 Columns  
I/O3 10  
I/O4 11  
WE 12  
A4 13  
A5 14  
A6 15  
A7 16  
A5  
A6  
A7  
Data  
Cont.  
I/O Circuit  
Column Select  
I/O1~I/O8  
CLK  
Gen.  
PIN FUNCTION  
A8 A9 A10 A11 A12 A13 A14 A15 A16  
Pin Name  
A0 - A16  
WE  
Pin Function  
Address Inputs  
Write Enable  
Chip Select  
CS  
CS  
WE  
OE  
OE  
Output Enable  
Data Inputs/Outputs  
Power(+3.3V)  
Ground  
I/O1 ~ I/O8  
VCC  
VSS  
N.C  
No Connection  
Rev 2.1  
August 1998  
- 2 -  
Preliminary  
PRELIMINARY  
CMOS SRAM  
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P  
ABSOLUTE MAXIMUM RATINGS*  
Parameter  
Voltage on Any Pin Relative to VSS  
Voltage on VCC Supply Relative to VSS  
Power Dissipation  
Symbol  
VIN, VOUT  
VCC  
Rating  
-0.5 to 4.6  
-0.5 to 4.6  
1.0  
Unit  
V
V
PD  
W
Storage Temperature  
TSTG  
TA  
-65 to 150  
0 to 70  
°C  
°C  
°C  
Operating Temperature  
Commercial  
Industrial  
TA  
-40 to 85  
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and  
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.  
Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)  
Parameter  
Min  
Symbol  
VCC  
VSS  
Typ  
Max  
Unit  
V
Supply Voltage  
3.0  
3.3  
3.6  
Ground  
0
0
-
0
V
V
Input High Voltage  
Input Low Voltage  
VIH  
2.0  
VCC+0.3***  
0.8  
V
VIL  
-0.3**  
-
*
The above parameters are also guaranteed at industrial temperature range.  
** VIL(Min) = -2.0V a.c(Pulse Width £ 6ns) for I £ 20mA.  
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width £ 6ns) for I £ 20mA.  
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)  
Parameter  
Input Leakage Current  
Output Leakage Current  
Symbol  
Test Conditions  
Min  
Max  
Unit  
ILI  
VIN = VSS to VCC  
-2  
2
mA  
ILO  
CS=VIH or OE=VIH or WE=VIL  
VOUT = VSS to VCC  
-2  
2
mA  
Operating Current  
ICC  
Min. Cycle, 100% Duty  
CS=VIL, VIN = VIH or VIL,  
IOUT=0mA  
8ns  
10ns  
12ns  
-
160  
155  
150  
50  
mA  
-
-
Standby Current  
ISB  
Min. Cycle, CS=VIH  
-
mA  
mA  
ISB1  
f=0MHz, CS ³ VCC-0.2V,  
VIN³ VCC-0.2V or VIN£0.2V  
Normal  
L-Ver.  
-
-
5
0.7  
0.4  
-
Output Low Voltage Level  
Output High Voltage Level  
VOL  
VOH  
IOL=8mA  
-
V
V
IOH=-4mA  
2.4  
* The above parameters are also guaranteed at industrial temperature range.  
CAPACITANCE*(TA=25°C, f=1.0MHz)  
Item  
Symbol  
Test Conditions  
VI/O=0V  
MIN  
Max  
8
Unit  
Input/Output Capacitance  
Input Capacitance  
CI/O  
-
-
pF  
pF  
CIN  
VIN=0V  
6
* Capacitance is sampled and not 100% tested.  
Rev 2.1  
August 1998  
- 3 -  
Preliminary  
PRELIMINARY  
CMOS SRAM  
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P  
AC CHARACTERISTICS(TA=0 to 70°C, VCC=3.3±0.3V, unless otherwise noted.)  
TEST CONDITIONS*  
Parameter  
Value  
0V to 3V  
Input Pulse Levels  
Input Rise and Fall Times  
3ns  
1.5V  
Input and Output timing Reference Levels  
Output Loads  
See below  
* The above test conditions are also applied at industrial temperature range.  
Output Loads(A)  
Output Loads(B)  
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ  
+3.3V  
RL = 50W  
DOUT  
VL = 1.5V  
30pF*  
319W  
DOUT  
ZO = 50W  
353W  
5pF*  
* Capacitive Load consists of all components of the  
test environment.  
* Including Scope and Jig Capacitance  
READ CYCLE*  
K6R1008V1B-8  
K6R1008V1B-10  
K6R1008V1B-12  
Parameter  
Symbol  
Unit  
Min  
8
-
Max  
Min  
10  
-
Max  
Min  
12  
-
Max  
Read Cycle Time  
tRC  
tAA  
tCO  
tOE  
tLZ  
-
8
8
4
-
-
10  
10  
5
-
12  
12  
6
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
Chip Select to Output  
-
-
-
Output Enable to Valid Output  
Chip Enable to Low-Z Output  
Output Enable to Low-Z Output  
Chip Disable to High-Z Output  
Output Disable to High-Z Output  
Output Hold from Address Change  
Chip Selection to Power Up Time  
Chip Selection to Power DownTime  
-
-
-
3
0
0
0
3
0
-
3
-
3
-
tOLZ  
tHZ  
tOHZ  
tOH  
tPU  
-
0
-
0
-
4
4
-
0
5
0
6
0
5
0
6
3
-
3
-
-
0
-
0
-
tPD  
8
-
10  
-
12  
* The above parameters are also guaranteed at industrial temperature range.  
Rev 2.1  
August 1998  
- 4 -  
Preliminary  
PRELIMINARY  
CMOS SRAM  
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P  
WRITE CYCLE*  
Parameter  
Write Cycle Time  
K6R1008V1B-8  
K6R1008V1B-10  
K6R1008V1B-12  
Unit  
Symbol  
Min  
8
Max  
Min  
10  
7
Max  
Min  
12  
8
Max  
tWC  
tCW  
tAS  
-
-
-
-
-
-
-
4
-
-
-
-
-
-
-
-
-
-
5
-
-
-
-
-
-
-
-
-
-
6
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Select to End of Write  
Address Set-up Time  
6
0
0
0
Address Valid to End of Write  
Write Pulse Width(OE High)  
Write Pulse Width(OE Low)  
Write Recovery Time  
tAW  
tWP  
tWP1  
tWR  
tWHZ  
tDW  
tDH  
6
7
8
6
7
8
8
10  
0
12  
0
0
Write to Output High-Z  
0
0
0
Data to Write Time Overlap  
Data Hold from Write Time  
End Write to Output Low-Z  
4
5
6
0
0
0
tOW  
3
3
3
* The above parameters are also guaranteed at industrial temperature range.  
TIMMING DIAGRAMS  
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)  
tRC  
Address  
tAA  
tOH  
Valid Data  
Data Out  
Previous Valid Data  
Rev 2.1  
August 1998  
- 5 -  
Preliminary  
PRELIMINARY  
CMOS SRAM  
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P  
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)  
tRC  
Address  
tAA  
tHZ(3,4,5)  
tCO  
CS  
tOE  
tOHZ  
OE  
tOLZ  
tOH  
tLZ(4,5)  
Data out  
Valid Data  
tPU  
tPD  
ICC  
VCC  
50%  
50%  
ISB  
Current  
NOTES(READ CYCLE)  
1. WE is high for read cycle.  
2. All read cycle timing is referenced from the last valid address to the first transition address.  
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or  
VOL levels.  
4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to  
device.  
5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.  
6. Device is continuously selected with CS=VIL.  
7. Address valid prior to coincident with CS transition low.  
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write  
cycle.  
TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)  
tWC  
Address  
OE  
tWR(5)  
tAW  
tCW(3)  
CS  
tWP(2)  
tAS(4)  
WE  
tDW  
tDH  
High-Z  
Data in  
Valid Data  
tOHZ(6)  
High-Z(8)  
Data out  
Rev 2.1  
August 1998  
- 6 -  
Preliminary  
PRELIMINARY  
CMOS SRAM  
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P  
TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)  
tWC  
Address  
CS  
tWR(5)  
tAW  
tCW(3)  
tAS(4)  
tWP1(2)  
WE  
tDW  
tDH  
High-Z  
Data in  
Data out  
Valid Data  
tWHZ(6)  
tOW  
(10)  
(9)  
High-Z(8)  
TIMING WAVEFORM OF WRITE CYCLE(3) (CS = Controlled)  
tWC  
Address  
tAW  
tWR(5)  
tCW(3)  
tWP(2)  
CS  
tAS(4)  
WE  
tDH  
tDW  
High-Z  
High-Z  
High-Z  
Data in  
Data out  
Data Valid  
tLZ  
tWHZ(6)  
High-Z(8)  
NOTES(WRITE CYCLE)  
1. All write cycle timing is referenced from the last valid address to the first transition address.  
2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ;  
A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write to the end of  
write.  
3. tCW is measured from the later of CS going low to end of write.  
4. tAS is measured from the address valid to the beginning of write.  
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.  
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase  
of the output must not be applied because bus contention can occur.  
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.  
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.  
9. Dout is the read data of the new address.  
10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be  
applied.  
Rev 2.1  
August 1998  
- 7 -  
Preliminary  
PRELIMINARY  
CMOS SRAM  
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P  
FUNCTIONAL DESCRIPTION  
CS  
WE  
X
OE  
X*  
H
Mode  
Not Select  
Output Disable  
Read  
I/O Pin  
High-Z  
High-Z  
DOUT  
Supply Current  
H
ISB, ISB1  
ICC  
L
H
L
H
L
ICC  
L
L
X
Write  
DIN  
ICC  
* X means Don¢t Care.  
DATA RETENTION CHARACTERISTICS*(TA=0 to 70°C)  
Parameter  
VCC for Data Retention  
Data Retention Current  
Symbol  
VDR  
Test Condition  
CS³ VCC-0.2V  
Min.  
Typ.  
Max.  
3.6  
Unit  
V
2.0  
-
-
-
IDR  
VCC=3.0V, CS³ VCC-0.2V  
VIN³ VCC-0.2V or VIN£0.2V  
0.5  
mA  
VCC=2.0V, CS³ VCC-0.2V  
VIN³ VCC-0.2V or VIN£0.2V  
-
-
0.4  
Data Retention Set-Up Time  
Recovery Time  
tSDR  
tRDR  
See Data Retention  
Wave form(below)  
0
5
-
-
-
-
ns  
ms  
* The above parameters are also guaranteed at industrial temperature range.  
Data Retention Characteristic is for L-ver only.  
DATA RETENTION WAVE FORM  
CS controlled  
Data Retention Mode  
tSDR  
tRDR  
VCC  
3.0V  
VIH  
VDR  
CS³ VCC - 0.2V  
CS  
GND  
Rev 2.1  
August 1998  
- 8 -  
Preliminary  
PRELIMINARY  
CMOS SRAM  
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P  
Units:millimeters/Inches  
PACKAGE DIMENSIONS  
32-SOJ-400  
#32  
#17  
9.40 ±0.25  
0.370 ±0.010  
11.18 ±0.12  
0.440 ±0.005  
+0.10  
-0.05  
0.20  
0.008 +0.004  
#1  
#16  
-0.002  
0.69  
MIN  
21.36  
MAX  
0.841  
0.027  
20.95 ±0.12  
0.825 ±0.005  
1.30  
0.051  
1.30  
0.051  
(
(
)
)
0.10  
0.004  
3.76  
0.148  
MAX  
MAX  
+0.10  
-0.05  
+0.10  
-0.05  
+0.004  
-0.002  
0.71  
0.43  
1.27  
0.050  
0.95  
0.0375  
0.028 +0.004  
(
)
0.017  
-0.002  
32-TSOP2-400CF  
0~8°  
0.25  
0.010  
(
)
#32  
#17  
0.45 ~0.75  
0.018 ~ 0.030  
11.76 ±0.20  
0.463 ±0.008  
0.50  
0.020  
(
)
#1  
#16  
+0.10  
-0.05  
+0.004  
-0.002  
0.15  
21.35  
0.841  
MAX  
0.006  
20.95 ±0.10  
0.825 ±0.004  
1.00 ±0.10  
0.10 MAX  
0.004 MAX  
1.20  
0.047  
MAX  
0.039 ±0.004  
1.27  
0.050  
0.95  
0.037  
0.05  
0.40 ±0.10  
0.016 ±0.004  
(
)
MIN  
0.002  
Rev 2.1  
August 1998  
- 9 -  

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