K9F1G08D0M-PCB00 [SAMSUNG]
Flash, 128MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48;
| 型号： | K9F1G08D0M-PCB00 |
| 厂家： | 
SAMSUNG |
| 描述： | Flash, 128MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 光电二极管 内存集成电路 |
| 文件： | 总40页 (文件大小：729K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No History
Draft Date
July. 5. 2001
Nov. 5. 2001
Remark
0.0
0.1
1. Initial issue
Advance
1. Iol(R/B) of 1.8V is changed.
- min. value : 7mA --> 3mA
- Typ. value : 8mA --> 4mA
2. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
3. A recovery time of minimum 1ms is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
Dec. 4. 2001
---> A recovery time of minimum 10ms is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
0.2
0.3
1. ALE status fault in ’Random data out in a page’ timing diagram(page 19)
is fixed.
1. tAR1, tAR2 are merged to tAR.(Page11)
(Before revision) min. tAR1 = 10ns , min. tAR2 = 50ns
(After revision) min. tAR = 10ns
Apr. 25. 2002
2. min. tCLR is changed from 50ns to 10ns.(Page11)
3. min. tREA is changed from 35ns to 30ns.(Page11)
4. min. tWC is changed from 50ns to 45ns.(Page11)
5. tRHZ is devided into tRHZ and tOH.(Page11)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
6. tCHZ is devided into tCHZ and tOH.(Page11)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
Nov. 22.2002
0.4
1. The min. Vcc value 1.8V devices is changed.
K9F1GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
0.5
0.6
Mar. 6.2003
Mar. 13.2003
Pb-free Package is added.
K9F1G08U0M-FCB0,FIB0
K9F1G08Q0M-PCB0,PIB0
K9F1G08U0M-PCB0,PIB0
K9F1G16U0M-PCB0,PIB0
K9F1G16Q0M-PCB0,PIB0
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No History
Draft Date
Remark
0.7
Errata is added.(Front Page)-K9F1GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Mar.17. 2003
Specification
45 25 15 50 15 25 30
45
75
Relaxed value 80 60 20 80 20 60 60
Apr. 9. 2003
Jul. 2. 2003
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
0.8
0.9
1. 2.65V device is added.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
Aug. 5. 2003
1.0
AC parameters are changed-K9F1GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Before 45 25 15 50 15 25 30
After 80 60 20 80 20 60 60
45
75
Jan. 27. 2004
Apr. 23. 2004
Added Addressing method for program operation
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
1. PKG(TSOP1, WSOP1) Dimension Change
1.1
1.2
1.3
May. 24. 2004
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
2
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F1G08Q0M-Y,P
K9F1G16Q0M-Y,P
K9F1G08D0M-Y,P
K9F1G16D0M-Y,P
K9F1G08U0M-Y,P
K9F1G16U0M-Y,P
K9F1G08U0M-V,F
X8
X16
X8
1.70 ~ 1.95V
TSOP1
2.4 ~ 2.9V
2.7 ~ 3.6V
TSOP1
X16
X8
TSOP1
X16
X8
WSOP1
FEATURES
· Voltage Supply
· Fast Write Cycle Time
-1.8V device(K9F1GXXQ0M): 1.70V~1.95V
- 2.65V device(K9F1GXXD0M) : 2.4~2.9V
-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
- Program time : 300ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
· Organization
- Memory Cell Array
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit
-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit
- Data Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
- Cache Register
· Command Register Operation
· Cache Program Operation for High Performance Program
· Power-On Auto-Read Operation
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
· Automatic Program and Erase
- Page Program
· Intelligent Copy-Back Operation
· Unique ID for Copyright Protection
· Package :
- K9F1GXXX0M-YCB0/YIB0
-X8 device(K9F1G08X0M): (2K + 64)Byte
-X16 device(K9F1G16X0M): (1K + 32)Word
- Block Erase
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0M-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
-X8 device(K9F1G08X0M): (128K + 4K)Byte
-X16 device(K9F1G16X0M): (64K + 2K)Word
· Page Read Operation
- K9F1GXXX0M-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1G08U0M-FCB0/FIB0
- Page Size
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1G08U0M-V,F(WSOPI ) is the same device as
K9F1G08U0M-Y,P(TSOP1) except package type.
- X8 device(K9F1G08X0M): 2K-Byte
- X16 device(K9F1G16X0M) : 1K-Word
- Random Read : 25ms(Max.)
- Serial Access : 50ns(Min.)*
*K9F1GXXQ0M : 80ns
GENERAL DESCRIPTION
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-
effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-
byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)
or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or
word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write
controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin-
ing of data. Even the write-intensive systems can take advantage of the K9F1GXXX0M¢s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for
large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
3
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
PIN CONFIGURATION (TSOP1)
K9F1GXXX0M-YCB0,PCB0/YIB0,PIB0
X16 X8
X8
X16
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
PRE
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
Vss
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
1
2
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
N.C
3
4
5
6
7
8
CE
CE
9
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP1
Standard Type
12mm x 20mm
PRE
Vcc
N.C
N.C
N.C
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
Vss
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220AF
Unit :mm/Inch
20.00±0.20
0.787±0.008
#1
#48
#24
#25
1.00±0.05
0.039±0.002
0.05
0.002
MIN
1.20
0.047
MAX
18.40±0.10
0.724±0.004
0~8°
0.45~0.75
0.018~0.030
0.50
0.020
(
)
4
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9F1G08U0M-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
I/O7
I/O6
I/O5
I/O4
N.C
DNU
N.C
Vcc
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
CE
9
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Vss
N.C
DNU
N.C
I/O3
I/O2
I/O1
I/O0
N.C
DNU
N.C
N.C
WP
N.C
N.C
DNU
N.C
N.C
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
Unit :mm
48 - WSOP1 - 1217F
0.70 MAX
0.58±0.04
15.40±0.10
#1
#48
#24
#25
(0.01Min)
0.45~0.75
17.00±0.20
5
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
PIN DESCRIPTION
Pin Name
Pin Function
DATA INPUTS/OUTPUTS
I/O0 ~ I/O7
(K9F1G08X0M)
I/O0 ~ I/O15
The I/O pins are used to input command, address and data, and to output data during read operations. The I/
O pins float to high-z when the chip is deselected or when the outputs are disabled.
I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 oper-
ation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and
output.
(K9F1G16X0M)
COMMAND LATCH ENABLE
CLE
ALE
CE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode.
READ ENABLE
RE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WRITE ENABLE
WE
WP
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage
generator is reset when the WP pin is active low.
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.
R/B
POWER-ON READ ENABLE
PRE
The PRE controls auto read operation executed during power-on. The power-on auto-read is enabled when
PRE pin is tied to Vcc.
POWER
Vcc
Vss
N.C
VCC is the power supply for device.
GROUND
NO CONNECTION
Lead is not internally connected.
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
6
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Figure 1-1. K9F1G08X0M (X8) Functional Block Diagram
VCC
VSS
1024M + 32M Bit
NAND Flash
ARRAY
X-Buffers
Latches
& Decoders
A12 - A27
A0 - A11
(2048 + 64)Byte x 65536
Data Register & S/A
Y-Buffers
Latches
& Decoders
Cache Register
Y-Gating
Command
Command
Register
VCC
VSS
I/O Buffers & Latches
Global Buffers
CE
RE
WE
Control Logic
& High Voltage
Generator
I/0 0
Output
Driver
I/0 7
CLE ALE PRE
WP
Figure 2-1. K9F1G08X0M (X8) Array Organization
1 Block = 64 Pages
(128K + 4k) Byte
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 1024 Blocks
= 1056 Mbits
64K Pages
(=1,024 Blocks)
8 bit
2K Bytes
64 Bytes
64 Bytes
I/O 0 ~ I/O 7
Page Register
2K Bytes
I/O 0
A0
I/O 1
A1
I/O 2
I/O 3
A3
I/O 4
A4
I/O 5
A5
I/O 6
A6
I/O 7
A7
Column Address
Column Address
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
A2
A8
A9
A10
A14
A22
A11
A15
A23
*L
*L
*L
*L
Row Address
Row Address
A12
A20
A13
A21
A16
A24
A17
A25
A18
A26
A19
A27
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
7
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Figure 1-2. K9F1G16X0M (X16) Functional Block Diagram
VCC
VSS
1024M + 32M Bit
NAND Flash
ARRAY
X-Buffers
Latches
& Decoders
A11 - A26
A0 - A10
(512 + 64)Word x 65536
Data Register & S/A
Y-Buffers
Latches
& Decoders
Cache Register
Y-Gating
Command
Command
Register
VCC
VSS
I/O Buffers & Latches
Global Buffers
CE
RE
WE
Control Logic
& High Voltage
Generator
I/0 0
Output
Driver
I/0 15
CLE ALE PRE
WP
Figure 2-2. K9F1G16X0M (X16) Array Organization
1 Block = 64 Pages
(64K + 2k) Word
1 Page = (1K + 32)Words
1 Block = (1K + 32)Word x 64 Pages
= (64K + 2K) Words
1 Device = (1K+32)Word x 64Pages x 1024 Blocks
= 1056 Mbits
64K Pages
(=1,024 Blocks)
16 bit
1K Words
32 Words
32 Words
I/O 0 ~ I/O 15
Page Register
1K Words
I/O 0
A0
I/O 1
I/O 2
A2
I/O 3
I/O 4
A4
I/O 5
A5
I/O 6
A6
I/O 7
A7
I/O8 ~ 15
Column Address
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
A1
A9
A3
*L
*L
*L
*L
*L
Column Address
Row Address
A8
A10
A13
A21
*L
*L
*L
*L
A11
A19
A12
A20
A14
A22
A15
A23
A16
A24
A17
A25
A18
A26
Row Address
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
8
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Product Introduction
The K9F1GXXX0M is a 1056Mbit(1,107,296,256 bit) memory organized as 65,536 rows(pages) by 2112x8(X8 device) or
1056x16(X16 device) columns. Spare 64(X8) or 32(X16) columns are located from column address of 2048~2111(X8 device) or
1024~1055(X16 device). A 2112-byte(X8 device) or 1056-word(X16 device) data register and a 2112-byte(X8 device) or 1056-
word(X16 device) cache register are serially connected to each other. Those serially connected registers are connected to memory
cell arrays for accommodating data transfer between the I/O buffers and memory cells during page read and page program opera-
tions. The memory array is made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a
different page. A block consists of two NAND structured strings. A NAND structure consists of 32 cells. Total 1081344 NAND cells
reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block
basis. The memory array consists of 1024 separately erasable 128K-byte(X8 device) or 64K-word(X16 device) blocks. It indicates
that the bit by bit erase operation is prohibited on the K9F1GXXX0M.
The K9F1GXXX0M has addresses multiplexed into 8 I/Os(X16 device case : lower 8 I/Os). This scheme dramatically reduces pin
counts and allows system upgrades to future densities by maintaining consistency in system board design. Command, address and
data are all written through I/O's by bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch
Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some com-
mands require one bus cycle. For example, Reset Command, Status Read Command, etc require just one cycle bus. Some other
commands, like page read and block erase and page program, require two cycles: one cycle for setup and the other cycle for execu-
tion. The 128M byte(X8 device) or 64M word(X16 device) physical space requires 28(X8) or 27(X16) addresses, thereby requiring
four cycles for addressing: 2 cycles of column address, 2 cycles of row address, in that order. Page Read and Page Program need
the same four address cycles following the required command input. In Block Erase operation, however, only the two row address
cycles are used. Device operations are selected by writing specific commands into the command register. Table 1 defines the specific
commands of the K9F1GXXX0M.
The device provides cache program in a block. It is possible to write data into the cache registers while data stored in data registers
are being programmed into memory cells in cache program mode. The program performace may be dramatically improved by cache
program when there are lots of pages of data to be programmed.
The device embodies power-on auto-read feature which enables serial access of data of the 1st page without command and address
input after power-on.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another
page without need for transporting the data to and from the external buffer memory. Since the time-consuming serial access and
data-input cycles are removed, system performance for solid-state disk application is significantly increased.
Table 1. Command Sets
Function
1st. Cycle
00h
2nd. Cycle
Acceptable Command during Busy
Read
30h
35h
-
Read for Copy Back
Read ID
00h
90h
Reset
FFh
80h
-
O
Page Program
Cache Program
Copy-Back Program
Block Erase
10h
15h
10h
D0h
-
80h
85h
60h
Random Data Input*
Random Data Output*
Read Status
85h
05h
E0h
70h
O
NOTE : 1. Random Data Input/Output can be executed in a page.
2. Command not specified in command sets table is not permitted to be entered to the device, which can raise erroneous operation.
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
9
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Rating
Parameter
Symbol
Unit
1.8V DEVICE
-0.6 to + 2.45
-0.2 to + 2.45
3.3V/2.65V DEVICE
-0.6 to + 4.6
VIN/OUT
VCC
Voltage on any pin relative to VSS
V
-0.6 to + 4.6
K9F1GXXX0M-XCB0
K9F1GXXX0M-XIB0
K9F1GXXX0M-XCB0
K9F1GXXX0M-XIB0
-10 to +125
Temperature Under
Bias
TBIAS
°C
-40 to +125
-65 to +150
5
Storage Temperature
TSTG
Ios
°C
Short Circuit Current
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1GXXX0M-XCB0 :TA=0 to 70°C, K9F1GXXX0M-XIB0:TA=-40 to 85°C)
K9F1GXXQ0M(1.8V)
K9F1GXXD0M(2.65V)
K9F1GXXU0M(3.3V)
Parameter
Symbol
Unit
Min
1.70
0
Typ.
1.8
0
Max
1.95
0
Min
2.4
0
Typ.
2.65
0
Max
2.9
0
Min
2.7
0
Typ.
3.3
0
Max
3.6
0
Supply Voltage
Supply Voltage
VCC
VSS
V
V
10
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
K9F1GXXX0M
Parameter
Symbol
Test Conditions
1.8V
2.65V
3.3V
Unit
Min Typ Max Min Typ Max Min Typ Max
Page Read with
Operating Serial Access
tRC=50ns, CE=VIL
IOUT=0mA
ICC1
-
8
15
-
10
20
-
10
20
Current
Program
ICC2
ICC3
-
-
-
-
-
8
8
-
15
15
1
-
-
-
10
10
-
20
20
1
-
-
-
10
10
-
20
20
1
mA
Erase
Stand-by Current(TTL)
ISB1 CE=VIH, WP=PRE=0V/VCC
CE=VCC-0.2,
ISB2
Stand-by Current(CMOS)
-
10
50
-
10
50
-
10
50
WP=PRE=0V/VCC
mA
Input Leakage Current
Output Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
-
-
±10
±10
VCC
-
-
-
-
±10
±10
-
-
-
-
±10
±10
ILO
VOUT=0 to Vcc(max)
VCC
-0.4
VCC
VCC
VCC
Input High Voltage
VIH*
-
-
-
-
-
2.0
-
-
+0.3 -0.4
0.4 -0.3
+0.3
+0.3
Input Low Voltage, All inputs VIL*
-
-0.3
0.5 -0.3
0.8
K9F1GXXQ0M :IOH=-100mA
Vcc
-0.1
VCCQ
V
Output High Voltage Level
Output Low Voltage Level
VOH K9F1GXXD0M :IOH=-100mA
K9F1GXXU0M :IOH=-400mA
-
-
-
-
-
-
0.4
-
2.4
-
-
-
-
-0.4
K9F1GXXQ0M :IOL=100uA
VOL K9F1GXXD0M :IOL=100mA
K9F1GXXU0M :IOL=2.1mA
-
0.1
-
-
0.4
-
K9F1GXXQ0M :VOL=0.1V
Output Low Current(R/B)
IOL(R/B)
3
4
3
4
8
10
mA
K9F1GXXD0M :VOL=0.1V
K9F1GXXU0M :VOL=0.4V
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
11
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
VALID BLOCK
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
NVB
1004
-
1024
Blocks
NOTE :
1. The K9F1GXXX0M may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase
or program factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
cycles.
AC TEST CONDITION
(K9F1GXXX0M-XCB0 :TA=0 to 70°C, K9F1GXXX0M-XIB0:TA=-40 to 85°C
K9F1GXXQ0M : Vcc=1.70V~1.95V, K9F1GXXD0M : Vcc=2.4V~2.9V , K9F1GXXU0M : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F1GXXQ0M
0V to Vcc
5ns
K9F1GXXD0M
0V to Vcc
5ns
K9F1GXXU0M
0.4V to 2.4V
5ns
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Vcc/2
Vcc/2
1.5V
K9F1GXXQ0M:Output Load (Vcc:1.8V +/-10%)
K9F1GXXD0M:Output Load (VccQ:2.65V +/-10%)1 TTL GATE and CL=30pF1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF
K9F1GXXU0M:Output Load (Vcc:3.0V +/-10%)
K9F1GXXU0M:Output Load (Vcc:3.3V +/-10%)
-
-
1 TTL GATE and CL=100pF
CAPACITANCE(TA=25°C, VCC=1.8V/2.65V/3.3V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
Unit
pF
Input/Output Capacitance
Input Capacitance
CI/O
VIL=0V
-
-
10
10
CIN
VIN=0V
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
H
L
ALE
L
CE
L
WE
RE
H
WP
PRE
Mode
Command Input
X
X
Read Mode
Write Mode
H
L
H
X
X
Address Input(4clock)
Command Input
H
L
L
L
H
H
X
H
L
H
H
X
Address Input(4clock)
L
L
L
H
H
X
Data Input
L
L
L
H
X
X
X
X
X
X
X
Data Output
X
X
X
X
X
X
H
H
X
X
X
X
X
X
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
X
X
H
X
X
X
X
H
L
X(1)
X
X
X
(2)
(2)
X
Stand-by
0V/VCC
0V/VCC
NOTE : 1. X can be VIL or VIH.
2. WP and PRE should be biased to CMOS high or CMOS low for standby.
12
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Program / Erase Characteristics
Parameter
Symbol
tPROG
Min
Typ
Max
700
700
4
Unit
ms
Program Time
-
300
Dummy Busy Time for Cache Program
tCBSY
3
-
ms
Main Array
Spare Array
-
-
-
cycles
cycles
ms
Number of Partial Program Cycles
in the Same Page
Nop
-
4
Block Erase Time
tBERS
2
3
NOTE : 1. Max. time of tCBSY depends on timing between internal program completion and data in
AC Timing Characteristics for Command / Address / Data Input
Min
Max
Parameter
Symbol
Unit
K9F1GXXQ0M K9F1GXXD0M K9F1GXXU0M K9F1GXXQ0M K9F1GXXD0M K9F1GXXU0M
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
tCLS
tCLH
tCS
0
0
10
0
0
10
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
0
tCH
10
60
0
10
25(1)
0
10
25(1)
0
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
tWP
tALS
tALH
tDS
10
20
10
80
20
10
20
10
45
15
10
20
10
45
15
tDH
tWC
tWH
NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
Min
Max
Parameter
Symbol
Unit
K9F1GXXQ0M K9F1GXXD0M K9F1GXXU0M K9F1GXXQ0M K9F1GXXD0M K9F1GXXU0M
Data Transfer from Cell to Register
ALE to RE Delay
tR
tAR
-
10
10
20
60
-
-
-
10
10
20
25
-
25
25
25
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
10
20
25
-
-
-
-
-
-
-
CLE to RE Delay
tCLR
tRR
Ready to RE Low
-
-
-
RE Pulse Width
tRP
-
-
-
WE High to Busy
tWB
tRC
100
-
100
-
100
-
Read Cycle Time
80
-
50
-
50
-
RE Access Time
tREA
tCEA
tRHZ
tCHZ
tOH
60
75
30
20
-
30
45
30
20
-
30
45
30
20
-
CE Access Time
-
-
-
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
-
-
-
-
-
-
15
20
0
15
15
0
15
15
0
tREH
tIR
-
-
-
-
-
-
tWHR
60
60
60
-
-
-
Device Resetting Time
(Read/Program/Erase)
tRST
-
-
-
5/10/500(1) 5/10/500(1) 5/10/500(1)
ms
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
13
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
NAND Flash Technical Notes
Invalid Block(s)
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The infor-
mation regarding the invalid block(s) is so called as the invalid block information. Devices with invalid block(s) have the same quality
level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the perfor-
mance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design
must be able to mask out the invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is guaran-
teed to be a valid block, does not require Error Correction up to 1K program/erase cycles.
Identifying Invalid Block(s)
All device locations are erased(FFh for X8, FFFFh for X16) except locations where the invalid block(s) information is written prior to
shipping. The invalid block(s) status is defined by the 1st byte(X8 device) or 1st word(X16 device) in the spare area. Samsung
makes sure that either the 1st or 2nd page of every invalid block has non-FFh(X8) or non-FFFFh(X16) data at the column address of
2048(X8 device) or 1024(X16 device). Since the invalid block information is also erasable in most cases, it is impossible to recover
the information once it has been erased. Therefore, the system must be able to recognize the invalid block(s) based on the original
invalid block information and create the invalid block table via the following suggested flow chart(Figure 3). Any intentional erasure of
the original invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
Check "FFh( or FFFFh)" at the column address
2048(X8 device) or 1024(X16 device)
of the 1st and 2nd page in the block
*
No
Check "FFh
or FFFFh" ?
Create (or update)
Invalid Block(s) Table
Yes
No
Last Block ?
Yes
End
Figure 3. Flow chart to create invalid block table.
14
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Error in write or read operation
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-
ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block.To improve the efficiency of mem-
ory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block
replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Detection and Countermeasure sequence
Erase Failure
Status Read after Erase --> Block Replacement
Status Read after Program --> Block Replacement
Read back ( Verify after Program) --> Block Replacement
or ECC Correction
Write
Read
Program Failure
Single Bit Failure
Verify ECC -> ECC Correction
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
ECC
Program Flow Chart
If ECC is used, this verification
operation is not needed.
Start
Write 80h
Write 00h
Write Address
Write 30h
Write Address
Write Data
Write 10h
Wait for tR Time
*
Fail
Read Status Register
Program Error
Verify Data
No
Pass
I/O 6 = 1 ?
or R/B = 1 ?
Program Completed
Yes
*
No
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
Program Error
I/O 0 = 0 ?
*
Yes
15
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Write 00h
Start
Write 60h
Write Block Address
Write Address
Write 30h
Write D0h
Read Data
Read Status Register
ECC Generation
No
I/O 6 = 1 ?
or R/B = 1 ?
No
Verify ECC
Reclaim the Error
Yes
*
No
Yes
Erase Error
I/O 0 = 0 ?
Page Read Completed
Yes
Erase Completed
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Block Replacement
Block A
1st
{
(n-1)th
1
nth
an error occurs.
(page)
Buffer memory of the controller.
Block B
1st
2
{
(n-1)th
nth
(page)
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
16
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-
nificant bit) pages of the block. Random page address programming is prohibited.
(64)
(64)
Page 63
Page 31
Page 63
Page 31
:
:
(1)
:
(32)
:
(3)
(2)
(1)
Page 2
Page 1
Page 0
(3)
(32)
(2)
Page 2
Page 1
Page 0
Data register
Data register
From the LSB page to MSB page
DATA IN: Data (1)
Data (64)
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Data (64)
17
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal
2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system
design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activat-
ing CE during the data-loading and serial access would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CLE
CE don’t-care
CE
WE
ALE
I/Ox
80h
tCS
Address(4Cycles)
Data Input
Data Input
10h
tCEA
tCH
CE
RE
CE
tREA
tWP
WE
out
I/O0~7
Figure 5. Read Operation with CE don’t-care.
CLE
CE
CE don’t-care
RE
ALE
tR
R/B
WE
I/Ox
Data Output(serial access)
00h
Address(4Cycle)
30h
18
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
NOTE
I/O
DATA
ADDRESS
Device
I/Ox
Data In/Out
~2112byte
~1056word
Col. Add1
A0~A7
Col. Add2
A8~A11
Row Add1
A12~A19
A11~A18
Row Add2
A20~A27
A19~A26
K9F1G08X0M(X8 device)
K9F1G16X0M(X16 device)
I/O 0 ~ I/O 7
I/O 0 ~ I/O 15
A0~A7
A8~A10
Command Latch Cycle
CLE
tCLH
tCLS
tCS
tCH
CE
tWP
WE
tALS
tALH
ALE
I/Ox
tDH
tDS
Command
K9F1G16X0M : I/O8~15 must be set to "0"
Address Latch Cycle
tCLS
CLE
tCS
tWC
tWC
tWC
CE
tWP
tWP
tWP
tWP
WE
tWH
tALH tALS
tWH
tALH tALS
tWH
tALH tALS
tALH
tDH
tALS
ALE
tDH
tDH
tDH
tDS
tDS
tDS
tDS
Col. Add2
Row Add1
Col. Add1
Row Add2
I/Ox
K9F1G16X0M : I/O8~15 must be set to "0"
19
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Input Data Latch Cycle
tCLH
CLE
CE
tCH
tWC
tALS
ALE
tWP
tWP
tWP
WE
tWH
tDH
tDH
tDH
tDS
tDS
tDS
I/Ox
DIN final*
DIN 0
DIN 1
NOTES : DIN final means 2112(X8) or 1056(X16)
Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)
tCEA
CE
tCHZ*
tOH
tREH
tREA
tREA
tREA
tRP
RE
tRHZ*
tRHZ*
tOH
I/Ox
Dout
Dout
Dout
tRC
tRR
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
20
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Status Read Cycle
tCLR
CLE
tCLS
tCLH
tCS
CE
tCH
tWP
WE
RE
tCEA
tCHZ*
tOH
tWHR
tRHZ*
tOH
tDH
tREA
tDS
tIR*
I/Ox
Status Output
70h
K9F1G16X0M : I/O8~15 must be set to "0"
21
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Read Operation
tCLR
CLE
CE
tWC
WE
ALE
RE
tWB
tAR
tRHZ
tOH
tR
tRC
tRR
Col. Add2 Row Add1 Row Add2
00h
Col. Add1
30h
Dout N
Dout N+1
Dout M
I/Ox
R/B
Column Address
Row Address
Busy
Read Operation(Intercepted by CE)
CLE
CE
WE
ALE
RE
tWB
tCHZ
tOH
tAR
tR
tRC
tRR
Row Add1 Row Add2
Dout N+2
00h
Col. Add1 Col. Add2
30h
Dout N
Dout N+1
I/Ox
R/B
Row Address
Column Address
Busy
22
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
23
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Page Program Operation
CLE
CE
tWC
tWC
tWC
WE
tPROG
tWB
ALE
RE
Din
N
Din
M
Col. Add2 Row Add1 Row Add2
Co.l Add1
I/Ox
10h
80h
70h
I/O0
SerialData
Input Command
Program
Command
1 up to m Byte
Serial Input
Read Status
Command
Column Address
Row Address
R/B
I/O0=0 Successful Program
I/O0=1 Error in Program
X8 device : m = 2112byte
X16 device : m = 1056word
24
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
»
»
» »
» »
»
25
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
»
» »
»
26
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
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FLASH MEMORY
BLOCK ERASE OPERATION
CLE
CE
tWC
WE
tBERS
tWB
ALE
RE
I/Ox
Row Add1 Row Add2
60h
D0h
70h
I/O 0
Row Address
Busy
R/B
Auto Block Erase
Setup Command
Erase Command
I/O0=0 Successful Erase
Read Status I/O0=1 Error in Erase
Command
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FLASH MEMORY
Read ID Operation
CLE
CE
WE
tAR
ALE
RE
tREA
Device
Code*
I/Ox
4th cyc.*
00h
ECh
XXh
90h
Read ID Command
Maker Code Device Code
Address. 1cycle
Device
Device Code*(2nd Cycle)
4th Cycle*
K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
A1h
F1h
F1h
B1h
C1h
C1h
15h
15h
15h
55h
55h
55h
ID Defintition Table
90 ID : Access command = 90H
Description
1st Byte
2nd Byte
3rd Byte
4th Byte
Maker Code
Device Code
Don’t care
Page Size, Block Size, Spare Size, Organization,Serial access minimum
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FLASH MEMORY
4th ID Data
ITEM
Description
I/O7
I/O6 I/O5 I/O4
I/O3
I/O2
I/O1 I/O0
1KB
2KB
Reserved
Reserved
0
0
1
1
0
1
0
1
Page Size
(w/o redundant area )
64KB
0
0
1
1
0
1
0
1
Blcok Size
(w/o redundant area )
128KB
256KB
Reserved
Redundant Area Size
( byte/512byte)
8
16
0
1
x8
x16
0
1
Organization
50ns
25ns
Reserved
Reserved
0
1
0
1
0
0
1
1
Serial Access minimum
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FLASH MEMORY
Device Operation
PAGE READ
Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h and 30h to the com-
mand register along with four address cycles. In two consecutive read operations, the second one doesn’t need 00h command, which
four address cycles and 30h command initiates that operation.Two types of operations are available : random read, serial page read
The random read mode is enabled when the page address is changed. The 2112 bytes(X8 device) or 1056 words(X16 device) of
data within the selected page are transferred to the data registers in less than 25ms(tR). The system controller can detect the comple-
tion of this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be
read out in 50ns(1.8V device : 80ns) cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make
the device output the data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output com-
mand. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
CLE
CE
WE
ALE
tR
R/B
RE
I/Ox
00h
Address(4Cycle)
30h
Data Output(Serial Access)
Col Add1,2 & Row Add1,2
Data Field
Spare Field
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FLASH MEMORY
Figure 7. Random Data Output In a Page
tR
R/B
RE
Address
4Cycles
Address
2Cycles
Data Output
Data Output
E0h
I/Ox
00h
30h
05h
Col Add1,2 & Row Add1,2
Data Field
Data Field
Spare Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a word or consecutive
bytes up to 2112(X8 device) or words up to 1056(X16 device), in a single page program cycle. The number of consecutive partial
page programming operation within the same page without an intervening erase operation must not exceed 4 times for main array(X8
device:1time/512byte, X16 device:1time/256word) and 4 times for spare array(X8 device:1time/16byte ,X16 device:1time/8word).
The addressing should be done in sequential order in a block. A page program cycle consists of a serial data loading period in which
up to 2112bytes(X8 device) or 1056words(X16 device) of data may be loaded into the data register, followed by a non-volatile pro-
gramming period where the loaded data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the four cycle address inputs and
then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data
input in a page. The column address of next data, which will be entered, may be changed to the address which follows random data
input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.
The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the
serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and tim-
ings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the
Read Status Register command may be entered to read the status register. The system controller can detect the completion of a pro-
gram cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset
command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be
checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command
register remains in Read Status command mode until another valid command is written to the command register.
Figure 8. Program & Read Status Operation
tPROG
R/B
"0"
Pass
80h
Address & Data Input
I/O0
Fail
I/Ox
10h
70h
Col Add1,2 & Row Add1,2
Data
"1"
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Figure 9. Random Data Input In a Page
tPROG
R/B
"0"
Pass
80h
Address & Data Input
Address & Data Input
I/O0
70h
I/Ox
85h
10h
Col Add1,2
Data
Col Add1,2 & Row Add1,2
Data
"1"
Fail
Cache Program
Cache Program is an extension of Page Program, which is executed with 2112byte(X8 device) or 1056word(X16 device) data regis-
ters, and is available only within a block. Since the device has 1 page of cache memory, serial data input may be executed while data
stored in data register are programmed into memory cell.
After writing the first set of data up to 2112byte(X8 device) or 1056word(X16 device) into the selected cache registers, Cache Pro-
gram command (15h) instead of actual Page Program (10h) is inputted to make cache registers free and to start internal program
operation. To transfer data from cache registers to data registers, the device remains in Busy state for a short period of time(tCBSY)
and has its cache registers ready for the next data-input while the internal programming gets started with the data loaded into data
registers. Read Status command (70h) may be issued to find out when cache registers become ready by polling the Cache-Busy sta-
tus bit(I/O 6). Pass/fail status of only the previouse page is available upon the return to Ready state. When the next set of data is
inputted with the Cache Program command, tCBSY is affected by the progress of pending internal programming. The programming of
the cache registers is initiated only when the pending program cycle is finished and the data registers are available for the transfer of
data from cache registers. The status bit(I/O5) for internal Ready/Busy may be polled to identify the completion of internal program-
ming. If the system monitors the progress of programming only with R/B, the last page of the target programming sequence must be
progammed with actual Page Program command (10h).
Figure 10. Cache Program(available only within a block)
tPROG
tCBSY
tCBSY
tCBSY
R/B
Address &
Data Input
Address &
Data Input
Address &
Data Input*
Address &
Data Input
80h
70h
10h
80h
15h
80h
80h
15h
15h
Col Add1,2 & Row Add1,2
Data
Col Add1,2 & Row Add1,2
Data
Col Add1,2 & Row Add1,2
Data
Col Add1,2 & Row Add1,2
Data
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K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
NOTE : Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if
the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after com-
pletion of the previous cycle, which can be expressed as the following formula.
tPROG= Program time for the last page+ Program time for the ( last -1 )th page
- (Program command cycle time + Last page data loading time)
Copy-Back Program
The copy-back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory.
Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The ben-
efit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned
free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copy-
ing-program with the address of destination page. A read operation with "35h" command and the address of the source page moves
the whole 2112byte(X8 device) or 1056word(X16 device) data into the internal data buffer. As soon as the device returns to Ready
state, Page-Copy Data-input command (85h) with the address cycles of destination page followed may be written. The Program
Confirm command (10h) is required to actually begin the programming operation. Data input cycle for modifying a portion or multiple
distant portions of the source page is allowed as shown in Figure 12. "When there is a program-failure at Copy-Back operation,
error is reported by pass/fail status. But if the soure page has a bit error for charge loss, accumulated copy-back
operations could also accumulate bit errors. For this reason, two bit ECC is recommended for copy-back operation."
Figure 11. Page Copy-Back program Operation
tR
tPROG
R/B
I/Ox
Add.(4Cycles)
Pass
00h
35h
Add.(4Cycles)
10h
I/O0
Fail
85h
70h
Col. Add1,2 & Row Add1,2
Destination Address
Col. Add1,2 & Row Add1,2
Source Address
Figure 12. Page Copy-Back program Operation with Random Data Input
tPROG
tR
R/B
Add.(4Cycles)
Add.(2Cycles)
Col Add1,2
I/Ox
35h
Add.(4Cycles)
70h
00h
85h
Data
85h
Data
10h
Col. Add1,2 & Row Add1,2
Source Address
Col. Add1,2 & Row Add1,2
Destination Address
There is no limitation for the number of repetition.
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FLASH MEMORY
BLOCK ERASE
The Erase operation is done on a block basis. Block address loading is accomplished in two cycles initiated by an Erase Setup com-
mand(60h). Only address A18 to A27(X8) or A17 to A26(X16) is valid while A12 to A17(X8) or A11 to A16(X16) is ignored. The Erase
Confirm command(D0h) following the block address loading initiates the internal erasing process. This two-step sequence of setup
followed by execution command ensures that memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 13 details the sequence.
Figure 13. Block Erase Operation
tBERS
R/B
"0"
Pass
60h
I/O0
Fail
70h
Address Input(2Cycle)
I/Ox
D0h
"1"
Block Add. : A12 ~ A27 (X8)
or A11 ~ A26 (X16)
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, the read command(00h) should be given before starting read cycles.
Table2. Read Staus Register Definition
I/O No.
I/O 0
Page Program
Pass/Fail
Block Erase
Pass/Fail
Not use
Cache Prorgam
Pass/Fail(N)
Pass/Fail(N-1)
Not use
Read
Not use
Definition
Pass : "0"
Pass : "0"
"0"
Fail : "1"
Fail : "1"
I/O 1
Not use
Not use
I/O 2
Not use
Not use
Not use
I/O 3
Not Use
Not Use
Not Use
Not Use
"0"
I/O 4
Not Use
Not Use
Not Use
Not Use
"0"
I/O 5
Ready/Busy
Ready/Busy
Write Protect
Ready/Busy
Ready/Busy
Write Protect
True Ready/Busy
Ready/Busy
Write Protect
Ready/Busy
Ready/Busy
Write Protect
Busy : "0"
Busy : "0"
Protected:"0"
Ready : "1"
Ready : "1"
I/O 6
I/O 7
Not Protected:"1"
I/O 8~15
(X16 device
only)
Not use
Not use
Not use
Not use
Don’t -care
NOTE : 1. True Ready/Busy represents internal program operation status which is being executed in cache program mode.
2. I/Os defined ’Not use’ are recommended to be masked out when Read Status is being executed.
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FLASH MEMORY
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacturer code(ECh), and the device code and XXh, 4th cycle ID, respectively. The
command register remains in Read ID mode until further commands are issued to it. Figure 14 shows the operation sequence.
Figure 14. Read ID Operation
tCLR
CLE
CE
tCEA
WE
ALE
RE
tAR
tWHR
Device
Code*
tREA
I/OX
90h
00h
Address. 1cycle
ECh
XXh
4th Cyc.*
Maker code
Device code
Device
Device Code*(2nd Cycle)
4th Cycle*
K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
A1h
F1h
F1h
B1h
C1h
C1h
15h
15h
15h
55h
55h
55h
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 3 for device status after reset operation.If the device is
already in reset state a new reset command will be accepted by the command register. The R/B pin transitions to low for tRST after
the Reset command is written. Refer to Figure 15 below.
Figure 15. RESET Operation
tRST
R/B
I/OX
FFh
Table3. Device Status
After Power-up
After Reset
PRE status
High
First page data access is ready
Low
Waiting for next command
Operation Mode
00h command is latched
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K9F1G08Q0M K9F1G16Q0M
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FLASH MEMORY
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of auto-
page read function. Auto-page read function is enabled only when PRE pin is tied to Vcc. Serial access may be done after power-on
without latency. Power-On Auto Read mode is available only on 3.3V device(K9F1GXXU0M).
Figure 15. Power-On Auto-Read (3.3V device only)
~ 1.8V
VCC
CLE
CE
WE
ALE
PRE
R/B
tR
RE
I/OX
1st
2nd
3rd
....
n th
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K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M
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K9F1G08U0M K9F1G16U0M
FLASH MEMORY
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 16). Its value can be
determined by the following guidance.
Rp
ibusy
VCC
1.8V device - VOL : 0.1V, VOH : VCCq-0.1V
2.65V device - VOL : 0.4V, VOH : Vccq-0.4V
3.3V device - VOL : 0.4V, VOH : 2.4V
Ready Vcc
R/B
VOH
open drain output
CL
VOL
Busy
tf
tr
GND
Device
Figure 16. Rp vs tr ,tf & Rp vs ibusy
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FLASH MEMORY
@ Vcc = 1.8V, Ta = 25°C , CL = 30pF
Ibusy
300n
3m
1.7
200n
100n
2m
1m
120
0.85
60
90
tr
30
0.57
1.7
0.43
1.7
1.7
2K
tf
1.7
4K
1K
3K
Rp(ohm)
@ Vcc = 2.65V, Ta = 25°C , CL = 30pF
300n
3m
2.3
Ibusy
200n
100n
1.1
2m
1m
120
90
tr
60
30
0.75
2.3
2.3
2.3
0.55
tf
2.3
4K
1K
2K
3K
Rp(ohm)
@ Vcc = 3.3V, Ta = 25°C , CL = 100pF
400
2.4
Ibusy
300n
3m
300
1.2
200n
100n
200
0.8
2m
1m
tr
100
3.6
0.6
3.6
3.6
2K
3.6
tf
4K
1K
3K
Rp value guidance
Rp(ohm)
VCC(Max.) - VOL(Max.)
1.85V
Rp(min, 1.8V part) =
=
IOL + SIL
3mA + SIL
VCC(Max.) - VOL(Max.)
2.5V
Rp(min, 2.65V part) =
Rp(min, 3.3V part) =
=
=
IOL + SIL
3mA + SIL
VCC(Max.) - VOL(Max.)
3.2V
IOL + SIL
8mA + SIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
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FLASH MEMORY
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.65V device), 2V(3.3V device). WP pin provides hard-
ware protection and is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10ms is
required before internal circuit gets ready for any command sequences as shown in Figure 17. The two step command sequence for
program/erase provides additional software protection.
Figure 17. AC Waveforms for Power Transition
1.8V device : ~ 1.5V
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V
1.8V device : ~ 1.5V
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V
VCC
High
WP
WE
10ms
40
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