K9F2G08U0M-ICB00_技术文档

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

K9XXG08UXM

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

1

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Document Title

256M x 8 Bit / 512M x 8 Bit NAND Flash Memory

Revision History

Revision No History

Draft Date

Remark

0.0

0.1

1. Initial issue

Sep. 19.2001

Advance

Nov. 22. 2002

Preliminary

1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34)

2. Add the data protection Vcc guidence for 1.8V device - below about

1.1V. (Page 35)

Mar. 6.2003

Apr. 2. 2003

Preliminary

0.2

0.3

The min. Vcc value 1.8V devices is changed.

K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V

Few current value is changed.

Before

Unit : us

K9F2GXXU0M

K9F2GXXQ0M

Typ.

Max.

100

±20

Typ.

Max.

100

±20

ISB2

20

-

20

-

ILI

ILO

-

After

K9F2GXXQ0M

K9F2GXXU0M

Typ.

Max.

50

Typ.

Max.

50

ISB2

ILI

10

-

10

-

±10

ILO

-

0.4

1. The 3rd Byte ID after 90h ID read command is don’t cared.

The 5th Byte ID after 90h ID read command is deleted.

2. Note is added.

Apr. 9. 2003

Preliminary

(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

durations of 20 ns or less.)

3. Pb-free Package is added.

K9F2G08Q0M-PCB0,PIB0

K9F2G08U0M-PCB0,PIB0

K9F2G16U0M-PCB0,PIB0

K9F2G16Q0M-PCB0,PIB0

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near your office.

2

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Document Title

256M x 8 Bit / 512M x 8 Bit NAND Flash Memory

Revision History

Revision No History

Draft Date

Remark

0.5

1. The value of AC parameters for K9F2G08U0M are changed.

Apr. 22.2004

Preliminary

K9F2G08U0M

ITEM

Before

45

25

15

50

25

15

30

45

-

After

30

tWC

tWP

tWH

tRC

15

10

30

tRP

15

tREH

tREA

tCEA

tADL

10

18

23

100

2. The definition and value of setup and hold time are changed.

K9F2G16U0M

ITEM

K9F2G08U0M

K9F2GXXQ0M

tCLS

tCLH

tCS

25

10

35

10

25

10

20

10

5

15

5

tCH

tALS

tALH

tDS

10

5

10

5

tDH

3. The tADL(Address to Data Loading Time) is added.

- tADL Minimum 100ns (Page 11, 22~25)

- tADL is the time from the WE rising edge of final address cycle

to the WE rising edge of first data cycle at program operation.

4. Added addressing method for program operation

1. PKG(TSOP1, WSOP1) Dimension Change

0.6

0.7

May. 19. 2004

Jan. 21. 2005

Preliminary

1. Technical note is changed

2. Notes of the AC timing characteristics are added

3. The description of Copy-back program is changed

4. 52ULGA Package is added

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near your office.

3

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Document Title

256M x 8 Bit / 512M x 8 Bit NAND Flash Memory

Revision History

Revision No History

Draft Date

Remark

0.8

0.9

1. CE access time : 23ns->35ns (p.13)

Feb. 14. 2005

Preliminary

1. The value of tREA for 3.3V device is changed.(18ns->20ns)

2. EDO mode is added.

May

4

6

2005

1. The flow chart to creat the initial invalid block table is changed.

1. LGA package for 2Gb mono is added

1. x16 device is removed

1.0

1.1

1.2

Oct. 20 2005

Oct. 31 2005

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near your office.

4

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

256M x 8 Bit / 512M x 8 Bit NAND Flash Memory

PRODUCT LIST

Part Number

K9F2G08U0M-Y,P

K9F2G08U0M-I

K9K4G08U1M-I

Vcc Range

Organization

PKG Type

TSOP1

2.7 ~ 3.6V

X8

52ULGA

FEATURES

• Voltage Supply

• Fast Write Cycle Time

-2.7 V ~3.6 V

• Organization

- Page Program time : 200µs(Typ.)

- Block Erase Time : 2ms(Typ.)

- Memory Cell Array

-(256M + 8,192K)bit x 8bit

- Data Register

-(2K + 64)bit x8bit

- Cache Register

-(2K + 64)bit x8bit

• Automatic Program and Erase

- Page Program

-(2K + 64)Byte

- Block Erase

-(128K + 4K)Byte

• Page Read Operation

- Page Size

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Cache Program Operation for High Performance Program

• Power-On Auto-Read Operation

• Intelligent Copy-Back Operation

• Unique ID for Copyright Protection

• Package :

- K9F2G08U0M-YCB0/YIB0

- 2K-Byte

- Random Read : 25µs(Max.)

- Serial Access : 30ns(Min.)

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F2G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F2G08U0M-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.0 mm pitch)

- K9K4G08U1M-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.0 mm pitch)

GENERAL DESCRIPTION

Offered in 256Mx8bit, the K9F2G08U0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost-effective solution

for the solid state mass storage market. A program operation can be performed in typical 200µs on the 2112-byte page and an erase

operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 30ns cycle time per byte.

The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates

all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the

write-intensive systems can take advantage of the K9F2G08U0M′s extended reliability of 100K program/erase cycles by providing

ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08U0M is an optimum solution for large nonvolatile

storage applications such as solid state file storage and other portable applications requiring non-volatility.

5

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

PIN CONFIGURATION (TSOP1)

K9F2G08U0M-YCB0,PCB0/YIB0,PIB0

N.C

I/O7

I/O6

I/O5

I/O4

N.C

PRE

Vcc

Vss

N.C

I/O3

I/O2

I/O1

I/O0

N.C

R/B

RE

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

1

2

3

4

5

6

7

8

CE

9

N.C

Vcc

Vss

N.C

CLE

ALE

WE

WP

N.C

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

48-pin TSOP1

Standard Type

12mm x 20mm

PACKAGE DIMENSIONS

48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)

48 - TSOP1 - 1220AF

Unit :mm/Inch

20.00±0.20

0.787±0.008

#1

#48

#24

#25

1.00±0.05

0.039±0.002

0.05

0.002

MIN

1.20

0.047

MAX

18.40±0.10

0.724±0.004

0~8°

0.45~0.75

0.018~0.030

0.50

0.020

(

)

6

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

PIN CONFIGURATION (ULGA)

K9F2G08U0M-ICB0/IIB0

L

M

C

E

G

H

K

N

A

B

D

J

F

NC

7

NC

/RE

NC

6

5

Vcc

NC

Vss

IO7

IO1

IO5

Vcc

R/B

/CE

IO6

IO4

NC

4

3

IO0

/WE

IO2

Vss

CLE

2

Vss

NC

/WP

IO3

Vss

1

ALE

NC

PACKAGE DIMENSIONS

52-ULGA (measured in millimeters)

Bottom View

Top View

12.00±0.10

A

10.00

2.00

1.00

3

12.00±0.10

7

6

5

4

2

1

B

1.00

(Datum A)

#A1

A

B

C

D

(Datum B)

E

F

G

H

J

K

L

M

N

41-∅

0.70±0.05

12-∅

1.00±0.05

0.1

∅

M C AB

0.1

∅

M C AB

Side View

17.00±0.10

0.10 C

7

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

PIN CONFIGURATION (ULGA)

K9K4G08U1M - ICB0/IIB0

L

M

C

E

G

H

K

N

A

B

D

J

F

NC

7

NC

/RE1

/CE2

/RB2

IO7-2

NC

IO6-2

IO7-1

IO6-1

IO5-2

6

5

Vcc

/RE2

Vss

IO5-1

Vcc

/RB1

/WE1

/CE1

/WP2

IO4-1

IO4-2

IO3-2

4

3

CLE2

ALE2

ALE1

NC

IO0-1

IO2-1

IO1-1 IO3-1

IO0-2

Vss

CLE1

2

1

Vss

/WP1

/WE2

NC

Vss

NC

IO1-2

NC

IO2-2

NC

PACKAGE DIMENSIONS

52-ULGA (measured in millimeters)

Bottom View

Top View

12.00±0.10

A

10.00

2.00

1.00

3

12.00±0.10

7

6

5

4

2

1

B

1.00

(Datum A)

#A1

A

B

C

D

(Datum B)

E

F

G

H

J

K

L

M

N

41-∅

0.70±0.05

12-∅

1.00±0.05

0.1

∅

M C AB

0.1

∅

M C AB

Side View

17.00±0.10

0.10 C

8

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

PIN DESCRIPTION

Pin Name

Pin Function

DATA INPUTS/OUTPUTS

I/O0 ~ I/O7

CLE

The I/O pins are used to input command, address and data, and to output data during read operations. The I/

O pins float to high-z when the chip is deselected or when the outputs are disabled.

COMMAND LATCH ENABLE

The CLE input controls the activating path for commands sent to the command register. When active high,

commands are latched into the command register through the I/O ports on the rising edge of the WE signal.

ADDRESS LATCH ENABLE

ALE

The ALE input controls the activating path for address to the internal address registers. Addresses are

latched on the rising edge of WE with ALE high.

CHIP ENABLE

The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and

the device does not return to standby mode in program or erase operation. Regarding CE control during

read operation, refer to ’Page read’ section of Device operation .

CE

READ ENABLE

RE

WE

WP

The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid

tREA after the falling edge of RE which also increments the internal column address counter by one.

WRITE ENABLE

The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of

the WE pulse.

WRITE PROTECT

The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage

generator is reset when the WP pin is active low.

READY/BUSY OUTPUT

The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or

random read operation is in process and returns to high state upon completion. It is an open drain output and

does not float to high-z condition when the chip is deselected or when outputs are disabled.

R/B

POWER-ON READ ENABLE

PRE

The PRE controls auto read operation executed during power-on. The power-on auto-read is enabled when

PRE pin is tied to Vcc.

POWER

Vcc

Vss

N.C

VCC is the power supply for device.

GROUND

NO CONNECTION

Lead is not internally connected.

NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.

Do not leave VCC or VSS disconnected.

9

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Figure 1-1. K9F2G08U0M Functional Block Diagram

VCC

VSS

2048M + 64M Bit

NAND Flash

ARRAY

X-Buffers

A12 - A28

Latches

& Decoders

(2048 + 64)Byte x 131072

Data Register & S/A

Y-Buffers

Latches

& Decoders

A0 - A11

Cache Register

Y-Gating

Command

Register

VCC

VSS

I/O Buffers & Latches

Global Buffers

CE

RE

WE

Control Logic

& High Voltage

Generator

I/0 0

Output

Driver

I/0 7

CLE ALE PRE

WP

Figure 2-1. K9F2G08U0M Array Organization

1 Block = 64 Pages

(128K + 4k) Byte

1 Page = (2K + 64)Bytes

1 Block = (2K + 64)B x 64 Pages

= (128K + 4K) Bytes

1 Device = (2K+64)B x 64Pages x 2048 Blocks

= 2112 Mbits

128K Pages

(=2,048 Blocks)

8 bit

2K Bytes

64 Bytes

I/O 0 ~ I/O 7

Page Register

2K Bytes

I/O 0

A0

I/O 1

A1

I/O 2

I/O 3

A3

I/O 4

A4

I/O 5

A5

I/O 6

A6

I/O 7

A7

Column Address

Row Address

1st Cycle

2nd Cycle

3rd Cycle

4th Cycle

5th Cycle

A2

A10

A14

A22

*L

A8

A9

A11

A15

A23

*L

A12

A20

A28

A13

A21

*L

A16

A24

*L

A17

A25

*L

A18

A26

*L

A19

A27

*L

Row Address

NOTE : Column Address : Starting Address of the Register.

* L must be set to "Low".

* The device ignores any additional input of address cycles than reguired.

10

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Product Introduction

The K9F2G08U0M is a 2112Mbit(2,214,592,512 bit) memory organized as 131,072 rows(pages) by 2112x8 columns. Spare 64 col-

umns are located from column address of 2048~2111. A 2112-byte data register and a 2112-byte cache register are serially con-

nected to each other. Those serially connected registers are connected to memory cell arrays for accommodating data transfer

between the I/O buffers and memory cells during page read and page program operations. The memory array is made up of 32 cells

that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists of two NAND

structured strings. A NAND structure consists of 32 cells. Total 1,081,344 NAND cells reside in a block. The program and read oper-

ations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 2048 sep-

arately erasable 128K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F2G08U0M.

The K9F2G08U0M has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades

to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by

bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch

Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For

example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block

erase and page program, require two cycles: one cycle for setup and the other cycle for execution. The 264M byte physical space

requires 29 addresses, thereby requiring five cycles for addressing: 2 cycles of column address, 3 cycles of row address, in that

order. Page Read and Page Program need the same five address cycles following the required command input. In Block Erase oper-

ation, however, only the three row address cycles are used. Device operations are selected by writing specific commands into the

command register. Table 1 defines the specific commands of the K9F2G08U0M.

The device provides cache program in a block. It is possible to write data into the cache registers while data stored in data registers

are being programmed into memory cells in cache program mode. The program performance may be dramatically improved by cache

program when there are lots of pages of data to be programmed.

The device embodies power-on auto-read feature which enables serial access of data of the 1st page without command and address

input after power-on.

In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another

page without need for transporting the data to and from the external buffer memory. Since the time-consuming serial access and

data-input cycles are removed, system performance for solid-state disk application is significantly increased.

Table 1. Command Sets

Function

1st. Cycle

00h

2nd. Cycle

Acceptable Command during Busy

Read

30h

35h

-

Read for Copy Back

Read ID

00h

90h

Reset

FFh

80h

-

O

Page Program

Cache Program

Copy-Back Program

Block Erase

10h

15h

10h

D0h

-

80h

85h

60h

Random Data Input^*

Random Data Output^*

Read Status

85h

05h

E0h

70h

O

NOTE : 1. Random Data Input/Output can be executed in a page.

Caution : Any undefined command inputs are prohibited except for above command set of Table 1.

11

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

VIN/OUT

VCC

Rating

Unit

-0.6 to + 4.6

-10 to +125

-40 to +125

Voltage on any pin relative to VSS

V

K9F2G08U0M-XCB0

Temperature Under Bias

Storage Temperature

TBIAS

°C

K9F2G08U0M-XIB0

K9F2G08U0M-XCB0

K9F2G08U0M-XIB0

TSTG

Ios

-65 to +150

5

°C

Short Circuit Current

mA

NOTE :

1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.

Maximum DC voltage on input/output pins is V^CC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.

2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions

as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

RECOMMENDED OPERATING CONDITIONS

(Voltage reference to GND, K9F2G08U0M-XCB0 :TA=0 to 70°C, K9F2G08U0M-XIB0:TA=-40 to 85°C)

Parameter

Supply Voltage

Symbol

VCC

Min

2.7

0

Typ.

3.3

0

Max

3.6

0

Unit

V

VSS

V

DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)

Parameter

Symbol

Test Conditions

tRC=30ns, CE=VIL

IOUT=0mA

Min

Typ

Max

Unit

Page Read with Serial

Access

ICC1

Operating

Current

-

15

30

Program

Erase

ICC2

ICC3

ISB1

-

mA

Stand-by Current(TTL)

CE=VIH, WP=PRE=0V/VCC

-

1

CE=VCC-0.2,

Stand-by Current(CMOS)

ISB2

10

50

WP=PRE=0V/VCC

µA

Input Leakage Current

Output Leakage Current

Input High Voltage

ILI

ILO

VIN=0 to Vcc(max)

VOUT=0 to Vcc(max)

-

±10

-

±10

VIH*

0.8xVcc

-

Vcc+0.3

Input Low Voltage, All inputs

Output High Voltage Level

Output Low Voltage Level

Output Low Current(R/B)

VIL*

-

-0.3

2.4

-

0.2xVcc

V

VOH

K9F2G08U0M :IOH=-400µA

K9F2G08U0M :IOL=2.1mA

K9F2G08U0M :VOL=0.4V

-

0.4

-

VOL

-

IOL(R/B)

8

10

mA

NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.

12

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

VALID BLOCK

Parameter

Symbol

Min

Typ.

Max

Unit

Valid Block Number

NVB

2,008

-

2,048

Blocks

NOTE :

1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-

sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or pro-

gram factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.

2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase

cycles.

AC TEST CONDITION

(K9F2G08U0M-XCB0 :TA=0 to 70°C, K9F2G08U0M-XIB0:TA=-40 to 85°C

K9F2G08U0M : Vcc=2.7V~3.6V unless otherwise noted)

Parameter

K9F2G08U0M

Input Pulse Levels

0V to Vcc

Input Rise and Fall Times

5ns

Vcc/2

Input and Output Timing Levels

Output Load

1 TTL GATE and CL=50pF

CAPACITANCE(TA=25°C, VCC=3.3V, f=1.0MHz)

Item

Symbol

Test Condition

Min

Max

10

Unit

pF

Input/Output Capacitance

Input Capacitance

CI/O

VIL=0V

-

CIN

VIN=0V

10

pF

NOTE : Capacitance is periodically sampled and not 100% tested.

MODE SELECTION

CLE

H

L

ALE

L

CE

L

WE

RE

H

WP

PRE

Mode

X

Command Input

Read Mode

Write Mode

H

L

H

X

Address Input(5clock)

Command Input

H

L

H

X

H

L

H

X

Address Input(5clock)

L

H

X

Data Input

L

H

X

Data Output

X

H

X

During Read(Busy)

During Program(Busy)

During Erase(Busy)

Write Protect

X

H

X

H

L

X^*1

X

*2

X

Stand-by

0V/VCC

NOTE : 1. X can be VIL or VIH.

2. WP and PRE should be biased to CMOS high or CMOS low for standby.

Program / Erase Characteristics

Parameter

Symbol

Min

Typ

Max

700

4

Unit

µs

*1

Program Time

-

200

tPROG

*2

Dummy Busy Time for Cache Program

3

-

µs

tCBSY

Main Array

Spare Array

-

cycles

ms

Number of Partial Program Cycles

in the Same Page

Nop

-

4

Block Erase Time

tBERS

2

3

NOTE : 1. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at Vcc of 3.3V and 25°C

2. Max. time of tCBSY depends on timing between internal program completion and data in

13

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

AC Timing Characteristics for Command / Address / Data Input

Min

Max

Parameter

Symbol

Unit

K9F2G08U0M*

K9F2G08U0M

K9F2G08U0M*

K9F2G08U0M

*1

CLE setup Time

25

10

35

10

25

10

20

10

45

15

100

15

5

-

ns

tCLS

CLE Hold Time

tCLH

*1

CE setup Time

20

5

tCS

CE Hold Time

tCH

tWP

WE Pulse Width

ALE setup Time

ALE Hold Time

15

5

*1

tALS

tALH

*1

Data setup Time

Data Hold Time

Write Cycle Time

WE High Hold Time

ALE to Data Loading Time

15

5

tDS

tDH

tWC

tWH

30

10

100

*2

tADL

NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low.

2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.

3. For cache program operation, the whole AC Charcateristics must be same as that of K9F2G08U0M*.

AC Characteristics for Operation

Min

Max

Parameter

Symbol

Unit

K9F2G08U0M*

K9F2G08U0M

K9F2G08U0M*

K9F2G08U0M

Data Transfer from Cell to Register

ALE to RE Delay

tR

-

10

20

25

-

10

20

15

-

25

10

-

25

µs

ns

tAR

-

CLE to RE Delay

tCLR

tRR

-

Ready to RE Low

-

RE Pulse Width

tRP

-

WE High to Busy

tWB

tRC

100

-

100

-

Read Cycle Time

50

-

30

-

RE Access Time

tREA

tCEA

tRHZ

tCHZ

tOH

30

45

30

20

-

20

35

30

20

-

CE Access Time

-

RE High to Output Hi-Z

CE High to Output Hi-Z

RE or CE High to Output hold

RE High Hold Time

Output Hi-Z to RE Low

RE High to WE Low

WE High to RE Low

-

15

0

15

10

0

tREH

tIR

-

tRHW

tWHR

100

60

100

60

-

Device Resetting Time

(Read/Program/Erase)

tRST

-

5/10/500^*1

µs

NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.

2. For cache program operation, the whole AC Charcateristics must be same as that of K9F2G08U0M*.

14

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

NAND Flash Technical Notes

Initial Invalid Block(s)

Initial invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The

information regarding the initial invalid block(s) is so called as the invalid block information. Devices with initial invalid block(s) have

the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s) does

not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor.

The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is placed on 00h

block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase cycles.

Identifying Initial Invalid Block(s)

All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The

invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every initial

invalid block has non-FFh data at the column address of 2048. Since the initial invalid block information is also erasable in most

cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the initial

invalid block(s) based on the original initial invalid block information and create the initial invalid block table via the following sug-

gested flow chart(Figure 3). Any intentional erasure of the original initial invalid block information is prohibited.

Start

Set Block Address = 0

Increment Block Address

Check "FFh( or FFFFh)" at the column address

2048 of the 1st and 2nd page in the block

*

No

Check "FFh

or FFFFh" ?

Create (or update)

Initial Invalid Block(s) Table

Yes

No

Last Block ?

Yes

End

Figure 3. Flow chart to create initial invalid block table.

15

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

NAND Flash Technical Notes (Continued)

Error in write or read operation

Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the block

failure rate.The following possible failure modes should be considered to implement a highly reliable system. In the case of status

read failure after erase or program, block replacement should be done. Because program status fail during a page program does not

affect the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an

erased empty block and reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC

must be employed. To improve the efficiency of memory space, it is recommended that the read failure due to single bit error should

be reclaimed by ECC without any block replacement. The block failure rate in the qualification report does not include those

reclaimed blocks.

Failure Mode

Erase Failure

Detection and Countermeasure sequence

Status Read after Erase --> Block Replacement

Status Read after Program --> Block Replacement

Verify ECC -> ECC Correction

Write

Read

Program Failure

Single Bit Failure

: Error Correcting Code --> Hamming Code etc.

Example) 1bit correction & 2bit detection

ECC

Program Flow Chart

Start

Write 80h

Write Address

Write Data

Write 10h

Read Status Register

No

I/O 6 = 1 ?

or R/B = 1 ?

Yes

*

No

Program Error

I/O 0 = 0 ?

Yes

Program Completed

: If program operation results in an error, map out

the block including the page in error and copy the

target data to another block.

*

16

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

NAND Flash Technical Notes (Continued)

Erase Flow Chart

Read Flow Chart

Start

Write 00h

Start

Write 60h

Write Block Address

Write Address

Write 30h

Write D0h

Read Data

Read Status Register

ECC Generation

No

I/O 6 = 1 ?

or R/B = 1 ?

No

Verify ECC

Reclaim the Error

Yes

*

No

Yes

Erase Error

I/O 0 = 0 ?

Page Read Completed

Yes

Erase Completed

: If erase operation results in an error, map out

the failing block and replace it with another block.

*

Block Replacement

Block A

1st

{

(n-1)th

1

nth

an error occurs.

(page)

Buffer memory of the controller.

Block B

1st

2

{

(n-1)th

nth

(page)

* Step1

When an error happens in the nth page of the Block ’A’ during erase or program operation.

* Step2

Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)

* Step3

Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.

* Step4

Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.

17

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

NAND Flash Technical Notes (Continued)

Addressing for program operation

Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-

nificant bit) pages of the block. Random page address programming is prohibited.

(64)

Page 63

Page 31

Page 63

Page 31

:

(1)

:

(32)

:

(3)

(2)

(1)

Page 2

Page 1

Page 0

(3)

(32)

(2)

Page 2

Page 1

Page 0

Data register

From the LSB page to MSB page

DATA IN: Data (1)

Ex.) Random page program (Prohibition)

DATA IN: Data (1)

Data (64)

18

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

System Interface Using CE don’t-care.

For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2112byte

data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or

audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access

would provide significant savings in power consumption.

Figure 4. Program Operation with CE don’t-care.

CLE

CE don’t-care

CE

WE

ALE

I/Ox

80h

Address(5Cycles)

Data Input

10h

tCH

tCEA

tCS

CE

tREA

tWP

RE

WE

out

I/O0~7

Figure 5. Read Operation with CE don’t-care.

CLE

CE

CE don’t-care

RE

ALE

tR

R/B

WE

I/Ox

Data Output(serial access)

00h

Address(5Cycle)

30h

19

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

NOTE

I/O

I/Ox

DATA

ADDRESS

Device

Data In/Out

~2112byte

Col. Add1

Col. Add2

Row Add1

Row Add2

Row Add3

K9F2G08U0M

I/O 0 ~ I/O 7

A0~A7

A8~A11

A12~A19

A20~A27

A28

Command Latch Cycle

CLE

tCLS

tCS

tCLH

tCH

CE

tWP

WE

tALS

tALH

ALE

I/Ox

tDH

tDS

Command

Address Latch Cycle

tCLS

CLE

tCS

tWC

CE

tWP

WE

tWH

tALH

tWH

tALH

tWH

tALH

tALS

tALH

tDH

tALS

ALE

I/Ox

tDH

tDS

Col. Add2

Row Add1

Col. Add1

Row Add2

Row Add3

20

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Input Data Latch Cycle

tCLH

CLE

tCH

CE

tWC

ALE

tALS

tWP

WE

tWH

tDH

tDS

I/Ox

DIN final*

DIN 0

DIN 1

NOTES : DIN final means 2112

Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)

tCEA

CE

tCHZ*

tOH

tREA

tRP

tREH

tREA

RE

tRHZ*

tOH

I/Ox

R/B

Dout

tRR

tRC

NOTES : Transition is measured ±200mV from steady state voltage with load.

This parameter is sampled and not 100% tested.

21

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)

tCEA

CE

tCHZ*

tOH

tREA

tRP

tREH

tREA

RE

tRHZ*

tOH

I/Ox

R/B

Dout

tRR

tRC

NOTES : Transition is measured ±200mV from steady state voltage with load.

This parameter is sampled and not 100% tested.

Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)

tCEA

CE

tCHZ*

tOH

tREA

tRP

tREH

tREA

RE

tRHZ*

tOH

I/Ox

R/B

Dout

tRR

tRC

NOTES : Transition is measured ±200mV from steady state voltage with load.

This parameter is sampled and not 100% tested.

22

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Status Read Cycle

tCLR

CLE

CE

tCLS

tCS

tCLH

tCH

tWP

WE

tCEA

tCHZ*

tOH

tWHR

RE

tRHZ*

tOH

tDH

tREA

tDS

tIR*

I/Ox

Status Output

70h

23

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Read Operation

tCLR

CLE

CE

tWC

WE

ALE

RE

tWB

tAR

tRHZ

tR

tRC

tRR

Col. Add2 Row Add1 Row Add2

00h

Col. Add1

30h

Dout N

Dout N+1

Dout M

Row Add3

I/Ox

Column Address

Row Address

Busy

R/B

Read Operation(Intercepted by CE)

CLE

CE

WE

ALE

RE

tWB

tCHZ

tOH

tAR

tR

tRC

tRR

Row Add2 Row Add3

Dout N+2

00h

Col. Add1 Col. Add2 Row Add1

30h

Dout N+1

Dout N

I/Ox

R/B

Row Address

Column Address

Busy

24

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

25

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Page Program Operation

CLE

CE

tWC

WE

ALE

RE

tPROG

tWB

tADL

Din

N

Din

M

Co.l Add1 Col. Add2 Row Add1 Row Add2 Row Add3

80h

I/Ox

R/B

10h

70h

I/O0

SerialData

Input Command

Program

Command

1 up to m Byte

Serial Input

Read Status

Command

Column Address

Row Address

I/O

0

=0 Successful Program

=1 Error in Program

m = 2112byte

I/O0

NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.

26

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

≈

≈ ≈

≈

≈ ≈

≈

27

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

≈

≈ ≈

≈

28

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

≈

≈ ≈

≈

≈ ≈

≈

29

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

BLOCK ERASE OPERATION

CLE

CE

tWC

WE

tBERS

tWB

ALE

RE

I/Ox

Row Add1 Row Add2 Row Add3

60h

D0h

70h

I/O 0

Row Address

Busy

R/B

Auto Block Erase

Setup Command

Erase Command

I/O

0

=0 Successful Erase

Read Status I/O

Command

0=1 Error in Erase

30

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Read ID Operation

CLE

CE

WE

ALE

RE

tAR

tREA

Device

Code*

I/Ox

4th cyc.*

00h

ECh

80h

90h

Read ID Command

Maker Code Device Code

Address. 1cycle

Device

Device Code*(2nd Cycle)

4th Cycle*

K9F2G08U0M

DAh

15h

ID Definition Table

90 ID : Access command = 90H

Description

1^stByte

2^ndByte

3^rdByte

4^thByte

Maker Code

Device Code

Don’t care

Page Size, Block Size, Spare Size, Organization

31

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

4th ID Data

Description

1KB

2KB

Reserved

I/O7

I/O6

I/O5 I/O4

I/O3

I/O2

I/O1 I/O0

0

1

0

1

0

1

Page Size

(w/o redundant area )

64KB

0

1

0

1

0

1

Block Size

(w/o redundant area )

128KB

256KB

Reserved

Redundant Area Size

( byte/512byte)

8

16

0

1

x8

x16

0

1

Organization

50ns/30ns

25ns

Reserved

0

1

0

1

0

1

Serial AccessMinimum

32

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Device Operation

PAGE READ

Page read is initiated by writing 00h-30h to the command register along with five address cycles. After initial power up, 00h command

is latched. Therefore only five address cycles and 30h command initiates that operation after initial power up. The 2,112 bytes of data

within the selected page are transferred to the data registers in less than 25µs(tR). The system controller can detect the completion of

this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read

out in 30ns cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device output the

data starting from the selected column address up to the last column address.

The device may output random data in a page instead of the consecutive sequential data by writing random data output command.

The column address of next data, which is going to be out, may be changed to the address which follows random data output com-

mand. Random data output can be operated multiple times regardless of how many times it is done in a page.

Figure 6. Read Operation

CLE

CE

WE

ALE

tR

R/B

RE

I/Ox

00h

Address(5Cycle)

30h

Data Output(Serial Access)

Col Add1,2 & Row Add1,2,3

Data Field

Spare Field

33

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Figure 7. Random Data Output In a Page

tR

R/B

RE

Address

5Cycles

Address

2Cycles

Data Output

30h

E0h

00h

05h

I/Ox

Col Add1,2 & Row Add1,2,3

Data Field

Spare Field

PAGE PROGRAM

The device is programmed basically on a page basis, but it does allow multiple partial page programing of a word or consecutive

bytes up to 2112, in a single page program cycle. The number of consecutive partial page programming operation within the same

page without an intervening erase operation must not exceed 4 times for main array(1time/512byte) and 4 times for spare

array(1time/16byte). The addressing should be done in sequential order in a block. A page program cycle consists of a serial data

loading period in which up to 2112bytes of data may be loaded into the data register, followed by a non-volatile programming period

where the loaded data is programmed into the appropriate cell.

The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the five cycle address inputs and

then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data

input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random

data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.

The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the

serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and tim-

ings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the

Read Status Register command may be entered to read the status register. The system controller can detect the completion of a pro-

gram cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset

command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be

checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command

register remains in Read Status command mode until another valid command is written to the command register.

Figure 8. Program & Read Status Operation

tPROG

R/B

"0"

Pass

80h

Address & Data Input

I/O0

Fail

I/Ox

10h

70h

Col Add1,2 & Row Add1,2,3

Data

"1"

34

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Figure 9. Random Data Input In a Page

tPROG

R/B

"0"

Pass

80h

Address & Data Input

I/O0

Fail

I/Ox

85h

10h

70h

Col Add1,2

Data

Col Add1,2 & Row Add1,2,3

Data

"1"

Cache Program

Cache Program is an extension of Page Program, which is executed with 2112byte data registers, and is available only within a block.

Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed

into memory cell.

After writing the first set of data up to 2112byte into the selected cache registers, Cache Program command (15h) instead of actual

Page Program (10h) is inputted to make cache registers free and to start internal program operation. To transfer data from cache reg-

isters to data registers, the device remains in Busy state for a short period of time(tCBSY) and has its cache registers ready for the

next data-input while the internal programming gets started with the data loaded into data registers. Read Status command (70h) may

be issued to find out when cache registers become ready by polling the Cache-Busy status bit(I/O 6). Pass/fail status of only the pre-

viouse page is available upon the return to Ready state. When the next set of data is inputted with the Cache Program command,

tCBSY is affected by the progress of pending internal programming. The programming of the cache registers is initiated only when

the pending program cycle is finished and the data registers are available for the transfer of data from cache registers. The status

bit(I/O5) for internal Ready/Busy may be polled to identify the completion of internal programming. If the system monitors the

progress of programming only with R/B, the last page of the target programming sequence must be progammed with actual Page

Program command (10h).

Figure 10. Cache Program(available only within a block)

tPROG

tCBSY

R/B

Address &

Data Input

Address &

Data Input

Address &

Data Input*

Address &

Data Input

80h

70h

10h

80h

15h

80h

15h

Col Add1,2 & Row Add1,2,3

Data

Col Add1,2 & Row Add1,2,3

Data

Col Add1,2 & Row Add1,2,3

Data

Col Add1,2 & Row Add1,2,3

Data

35

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

NOTE : Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if the

previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after comple-

tion of the previous cycle, which can be expressed as the following formula.

tPROG= Program time for the last page+ Program time for the ( last -1 )th page

- (Program command cycle time + Last page data loading time)

Copy-Back Program

The copy-back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory.

Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The ben-

efit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned

free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copy-

ing-program with the address of destination page. A read operation with "35h" command and the address of the source page moves

the whole 2112byte data into the internal data buffer. As soon as the device returns to Ready state, Page-Copy Data-input command

(85h) with the address cycles of destination page followed may be written. The Program Confirm command (10h) is required to actu-

ally begin the programming operation. Data input cycle for modifying a portion or multiple distant portions of the source page is

allowed as shown in Figure 11. "When there is a program-failure at Copy-Back operation, error is reported by pass/fail status.

But if the soure page has an error bit by charge loss, accumulated copy-back operations could also accumulate bit errors.

In this case, verifying the source page for a bit error is recommended before Copy-back program"

Figure 11. Page Copy-Back program Operation

tR

tPROG

R/B

I/Ox

Add.(5Cycles)

Pass

00h

35h

Add.(5Cycles)

10h

I/O0

Fail

85h

70h

Col. Add1,2 & Row Add1,2,3

Destination Address

Col. Add1,2 & Row Add1,2,3

Source Address

NOTE: It’s prohibited to operate Copy-Back program from an odd address page(source page) to an even address page(target page) or from an even

address page(source page) to an odd address page(target page). Therefore, the Copy-Back program is permitted just between odd address pages or

even address pages

Figure 12. Page Copy-Back program Operation with Random Data Input

tPROG

tR

R/B

Add.(5Cycles)

Add.(2Cycles)

Col Add1,2

I/Ox

35h

Add.(5Cycles)

70h

00h

85h

Data

85h

Data

10h

Col. Add1,2 & Row Add1,2,3

Source Address

Col. Add1,2 & Row Add1,2,3

Destination Address

There is no limitation for the number of repetition.

36

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

BLOCK ERASE

The Erase operation is done on a block basis. Block address loading is accomplished in three cycles initiated by an Erase Setup

command(60h). Only address A18 to A28 is valid while A12 to A17 is ignored. The Erase Confirm command(D0h) following the block

address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that

memory contents are not accidentally erased due to external noise conditions.

At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When

the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 13 details the sequence.

Figure 13. Block Erase Operation

tBERS

R/B

"0"

Pass

60h

I/O0

Fail

70h

Address Input(3Cycle)

Block Add. : A12 ~ A28

I/Ox

D0h

"1"

READ STATUS

The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether

the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs

the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows

the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE

does not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register

remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read

cycle, the read command(00h) should be given before starting read cycles.

Table2. Read Staus Register Definition

I/O No.

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

Page Program

Pass/Fail

Block Erase

Pass/Fail

Not use

Cache Prorgam

Pass/Fail(N)

Pass/Fail(N-1)

Not use

Read

Not use

Definition

Pass : "0"

Fail : "1"

Not use

Pass : "0"

Not use

Don’t -cared

Busy : "0"

Not Use

Ready/Busy

Write Protect

Ready/Busy

Write Protect

True Ready/Busy

Ready/Busy

Write Protect

Ready/Busy

Write Protect

Ready : "1"

Busy : "0"

Protected : "0"

Not Protected

NOTE : 1. True Ready/Busy represents internal program operation status which is being executed in cache program mode.

2. I/Os defined ’Not use’ are recommended to be masked out when Read Status is being executed.

37

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Read ID

The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of

00h. Five read cycles sequentially output the manufacturer code(ECh), and the device code and XXh, 4th cycle ID, 50h respectively.

The command register remains in Read ID mode until further commands are issued to it. Figure 14 shows the operation sequence.

Figure 14. Read ID Operation

tCLR

CLE

CE

tCEA

WE

ALE

RE

tAR

tWHR

Device

Code*

tREA

I/OX

90h

00h

Address. 1cycle

ECh

80h

4th Cyc.*

Maker code

Device code

Device

Device Code*(2nd Cycle)

3rd Cycle

4th Cycle*

K9F2G08U0M

DAh

80h

15h

RESET

The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random

read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no

longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and

the Status Register is cleared to value C0h when WP is high. Refer to table 3 for device status after reset operation. If the device is

already in reset state a new reset command will be accepted by the command register. The R/B pin transitions to low for tRST after

the Reset command is written. Refer to Figure 15 below.

Figure 15. RESET Operation

tRST

R/B

I/OX

FFh

Table3. Device Status

After Power-up

After Reset

PRE status

High

First page data access is ready

Low

Waiting for next command

Operation Mode

00h command is latched

38

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Power-On Auto-Read

The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.

An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of auto-

page read function. Auto-page read function is enabled only when PRE pin is tied to Vcc. Serial access may be done after power-on

without latency.

Figure 16. Power-On Auto-Read

~ 1.8V

VCC

CLE

CE

WE

ALE

PRE

R/B

tR

RE

I/OX

1st

2nd

3rd

....

n th

39

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

READY/BUSY

The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random

read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-

ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is

an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and

current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can be

determined by the following guidance.

Rp

ibusy

VCC

3.3V device - VOL : 0.4V, VOH : 2.4V

Ready Vcc

R/B

VOH

open drain output

C_L

VOL

Busy

tf

tr

GND

Device

Figure 17. Rp vs tr ,tf & Rp vs ibusy

@ Vcc = 3.3V, Ta = 25°C , C_L= 50pF

200

2.4

Ibusy

150n

3m

150

0.8

1.2

100n

50n

100

2m

1m

tr

tf

50

0.6

1.8

2K

1.8

4K

1K

3K

Rp(ohm)

Rp value guidance

VCC(Max.) - VOL(Max.)

3.2V

8mA + ΣIL

Rp(min, 3.3V part) =

=

IOL + ΣIL

where IL is the sum of the input currents of all devices tied to the R/B pin.

Rp(max) is determined by maximum permissible limit of tr

40

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Data Protection & Power up sequence

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector

disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at VIL

during power-up and power-down. A recovery time of minimum 10µs is required before internal circuit gets ready for any command

sequences as shown in Figure 18. The two step command sequence for program/erase provides additional software protection.

Figure 18. AC Waveforms for Power Transition

3.3V device : ~ 2.5V

VCC

High

WP

WE

10µs

41

K9K4G08U1M

K9F2G08U0M

FLASH MEMORY

Extended Data Out Mode

For the EDO mode, the device should hold the data on the system memory bus until the beginning of the next cycle, so that controller

could fetch the data at the falling edge. However NAND flash dosen’t support the EDO mode exactly.

The device stops the data input into the I/O bus after RE rising edge. But since the previous data remains in the I/O bus, the flow of I/

O data seems like Figure 18 and the system can access serially the data with EDO mode. tRLOH which is the parameter for fetching

data at RE falling time is necessary. Its appropriate value can be obtained with the reference chart as shown in Figure 19. The tRHOH

value depands on output load(CL) and I/O bus Pull-up resistor (Rp).

Figure 19. Serial Access Cycle after Read(EDO Type, CLE=L, WE=H, ALE=L)

CE

tRC

tRP

tREH

RE

tREA

tCEA

tREA

tRLOH

tRHOH

I/Ox

R/B

Dout

tRR

tRHOH

NOTES : Transition is measured at ±200mV from steady state voltage with load.

This parameter is sampled and not 100% tested.

Figure 20. Rp vs tRHOH vs CL

Rp

VCC

@ Vcc = 3.3V, Ta = 25°C

tRHOH

Rp = 100k

600

600n

Rp = 50k

I/O Drive

500n

425

360

400n

C_L

300

300n

180

200n

120

60

Rp = 10k

Rp = 5k

85

100n

60

GND

36

50n

42

30

50p

18

Device

C_L(F)

100p

30p

70p

tRLOH / tRHOH value guidance

tRHOH = C_L* V_OL* Rp / Vcc

tRLOH(min, 3.3V part) = tRHOH - tREH

42


型号：	K9F2G08U0M-ICB00
厂家：	SAMSUNG
描述：	Flash, 256MX8, 30ns, PBGA52, 12 X 17 MM, 1 MM PITCH, ULGA-52 内存集成电路
文件：	总42页 (文件大小：1074K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

K9F2G08U0M-ICB00 [SAMSUNG]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E