K9K1216U0C-JCB0 [SAMSUNG]
IC,EEPROM,NAND FLASH,32MX16,CMOS,BGA,63PIN,PLASTIC;
| 型号： | K9K1216U0C-JCB0 |
| 厂家： | 
SAMSUNG |
| 描述： | IC,EEPROM,NAND FLASH,32MX16,CMOS,BGA,63PIN,PLASTIC 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 内存集成电路 |
| 文件： | 总39页 (文件大小：955K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
Draft Date
Remark
0.0
Initial issue.
Sep. 12th 2002
Advance
1.0
1.Pin assignment of TBGA dummy ball is changed.
(before) DNU --> (after) N.C
Jan. 3rd 2003
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 34)
3. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 35)
4. Add the specification of Block Lock scheme.(Page 29~32)
5. Pin assignment of TBGA A3 ball is changed.
(before) N.C --> (after) Vss
2.0
1. The Maximum operating current is changed.
Read : Icc1 20mA-->30mA
Program : Icc2 20mA-->40mA
Erase : Icc3 20mA-->40mA
Jan. 17th 2003
Preliminary
Preliminary
2.1
2.2
The min. Vcc value 1.8V devices is changed.
K9K12XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 5th 2003
Pb-free Package is added.
K9K1208U0C-HCB0,HIB0
K9K12XXQ0C-HCB0,HIB0
K9K1216U0C-HCB0,HIB0
K9K1216Q0C-HCB0,HIB0
Mar. 13rd 2003
2.3
2.4
Errata is added.(Front Page)-K9K12XXQ0C
tWC tWP tRC tREH tRP tREA tCEA
Mar. 17th 2003
Apr. 4th 2003
Specification
45 25 50 15 25 30
45
55
Relaxed value 60 40 60 20 40 40
1. Max. Thickness of TBGA packge is changed.
0.09±0.10(Before) --> 1.10±0.10(After)
2. New definition of the number of invalid blocks is added.
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
memory space.)
1. The guidence of LOCKPRE pin usage is changed.
Don’t leave it N.C. Not using LOCK MECHANISM & POWER-ON AUTO-
READ, connect it Vss.(Before)
2.5
Jul. 4th 2003
--> Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect
it Vss or leave it N.C(After)
2. 2.65V device is added.
3. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
Draft Date
Remark
2.6
1. tREA value of 1.8V device is changed.
K9K12XXQ0C : tREA 30ns --> 35ns
2. Errata is deleted.
Aug. 20th. 2003
Oct. 28th. 2003
2.7
1. Command table is edited.
2. AC parameters are changed.
tWC tWH tWP tRC tREH tRP tREA tCEA
K9K12XXU0C
K9K12XXD0C 50 15 25 50 15 25 30
45
55
K9K12XXQ0C 60 20 40 60 20 40 40
1. AC parameters are changed.
Dec. 17th. 2003
2.8
tWC tWH tWP tRC tREH tRP tREA tCEA
K9K1208Q0C 50 15 25 50 15 25 35
K9K1216Q0C 60 20 40 60 20 40 40
45
55
1. The Test Condition for Stand-by Currents are changed.
ISB1: CE=VIH, WP=0V/VCC -->> CE=VIH, WP=LOCKPRE=0V/VCC
ISB2: CE=VCC-0.2, WP=0V/VCC -->> CE=VCC-0.2, WP=LOCKPRE=0V/VCC
Apr. 22th 2004
Oct. 25th. 2004
2.9
3.0
1. NAND Flash Technical Notes is changed.
-Invalid block -> initial invalid block ( page 14 )
-Error in write or read operation ( page 15 )
-Program Flow Chart ( page 15 )
2. TBGA->FBGA
1. The flow chart to creat initial invalid block table is changed.
May 6th. 2005
3.1
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
2
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
PRODUCT LIST.
Part Number
Vcc Range
Organization
PKG Type
K9K1208Q0C-G,J
K9K1216Q0C-G,J
K9K1208D0C-G,J
K9K1216D0C-G,J
K9K1208U0C-G,J
K9K1216U0C-G,J
X8
X16
X8
1.70 ~ 1.95V
2.4 ~ 2.9V
2.7 ~ 3.6V
FBGA
X16
X8
X16
FEATURES
• Voltage Supply
• Fast Write Cycle Time
- 1.8V device(K9K12XXQ0C) : 1.70~1.95V
- 2.65V device(K9F12XXD0C) : 2.4~2.9V
- 3.3V device(K9K12XXU0C) : 2.7 ~ 3.6 V
• Organization
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Memory Cell Array
- Program/Erase Lockout During Power Transitions
- X8 device(K9K1208X0C) : (64M + 2048K)bit x 8 bit
- X16 device(K9K1216X0C) : (32M + 1024 K)bit x 16bit
- Data Register
- X8 device(K9K1208X0C) : (512 + 16)bit x 8bit
- X16 device(K9K1216X0C) : (256 + 8)bit x16bit
• Automatic Program and Erase
• Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
- Data Retention : 10 Years
• Command Register Operation
• Intelligent Copy-Back
• Unique ID for Copyright Protection
• Package
- Page Program
- X8 device(K9K1208X0C) : (512 + 16)Byte
- X16 device(K9K1216X0C) : (256 + 8)Word
- Block Erase :
- K9K12XXX0C-GCB0/GIB0
63- Ball FBGA ( 9 x 11 /0.8mm pitch , Width 1.2 mm)
- K9K12XXX0C-JCB0/JIB0
- X8 device(K9K1208X0C) : (16K + 512)Byte
- X16 device(K9K1216X0C) : ( 8K + 256)Word
• Page Read Operation
63- Ball FBGA ( 9 x 11 /0.8mm pitch , Width 1.2 mm)
- Pb-free Package
- Page Size
- X8 device(K9K1208X0C) : (512 + 16)Byte
- X16 device(K9K1216X0C) : (256 + 8)Word
- Random Access
: 10µs(Max.)
- Serial Page Access : 50ns(Min.)*
*K9K1216Q0C : 60ns(Min.)
GENERAL DESCRIPTION
Offered in 64Mx8bit or 32Mx16bit, the K9K12XXX0C is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V,
3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can
be performed in typical 200µs on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed
in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns(K9K1216Q0C :
60ns) cycle time per byte (X8 device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well
as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required,
and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K12XXX0C′s extended
reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9K12XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
3
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
PIN CONFIGURATION (FBGA)
K9K12XXX0C-GCB0,JCB0/GIB0,JIB0
X8
X16
1
2
3
4
5
6
1
2
3
4
5
6
N.C N.C
N.C
N.C N.C
N.C N.C
N.C N.C
N.C
N.C N.C
N.C N.C
A
B
A
B
/WP ALE Vss /CE /WE R/B
/WP ALE Vss /CE /WE R/B
NC
NC
NC
NC
/RE CLE NC
NC NC
NC NC
NC NC
NC
NC
NC
NC
/RE CLE NC
NC
NC
NC
NC
NC
NC
C
D
E
C
D
E
NC
NC
NC
NC NC
NC NC
NC
NC
NC
NC NC
NC NC
NC NC
NC I/O5 I/O7 LOCKPRE
Vcc
NC LOCKPRE
NC
F
F
I/O8 I/O1 I/O10 I/O12 IO14
NC I/O0 NC
NC
Vcc
G
H
G
H
I/O0 I/O9 I/O3 VccQ I/O6 I/O15
Vss I/O2 I/O11 I/O4 I/O13 Vss
NC I/O1 NC VccQ I/O5 I/O7
Vss I/O2 I/O3 I/O4 I/O6 Vss
N.C N.C
N.C N.C
N.C N.C
N.C N.C
N.C N.C
N.C N.C
N.C N.C
N.C N.C
(Top View)
(Top View)
PACKAGE DIMENSIONS
63-Ball FBGA (measured in millimeters)
Top View
Bottom View
9.00±0.10
A
0.80 x9= 7.20
0.80 x5= 4.00
0.80
4
9.00±0.10
B
6
5
3
2
1
(Datum A)
#A1
A
B
C
D
E
F
(Datum B)
G
H
63-∅0.45±0.05
2.00
∅
0.20 M A B
Side View
9.00±0.10
0.10MAX
0.45±0.05
4
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
PIN DESCRIPTION
Pin Name
Pin Function
DATA INPUTS/OUTPUTS
I/O0 ~ I/O7
(K9K1208X0C)
I/O0 ~ I/O15
The I/O pins are used to input command, address and data, and to output data during read operations. The I/
O pins float to high-z when the chip is deselected or when the outputs are disabled.
I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 oper-
ation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and
output.
(K9K1216X0C)
COMMAND LATCH ENABLE
CLE
ALE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode in program or erase operation. Regarding CE control during
read operation, refer to ’Page read’ section of Device operation .
CE
READ ENABLE
RE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WRITE ENABLE
WE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power tra nsitions. The internal high voltage
generator is reset when the WP pin is active low. When LOCKPRE is a logic high and WP is a logic low, the
all blocks go to lock state.
WP
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.
R/B
OUTPUT BUFFER POWER
VccQ
VccQ is the power supply for Output Buffer.
VccQ is internally connected to Vcc, thus should be biased to Vcc.
POWER
Vcc
Vss
N.C
VCC is the power supply for device.
GROUND
NO CONNECTION
Lead is not internally connected.
DO NOT USE
Leave it disconnected
DNU
LOCK MECHANISM & POWER-ON AUTO-READ ENABLE
To Enable and disable the Lock mechanism and Power On Auto Read. When LOCKPRE is a logic high,
Block Lock mode and Power-On Auto-Read mode are enabled, and when LOCKPRE is a logic low, Block
Lock mode and Power-On Auto-Read mode are disabled. Power-On Auto-Read mode is available only on
3.3V device(K9K12XXU0C)
LOCKPRE
Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect it Vss or leave it N.C
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
5
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Figure 1-1. K9K1208X0C (X8) FUNCTIONAL BLOCK DIAGRAM
VCC
VSS
X-Buffers
A9 - A25
Latches
512M + 16M Bit
NAND Flash
ARRAY
& Decoders
Y-Buffers
Latches
A0 - A7
& Decoders
(512 + 16)Byte x 131072
Page Register & S/A
Y-Gating
A8
Command
Command
Register
VCC/VCCQ
VSS
I/O Buffers & Latches
Global Buffers
CE
RE
WE
Control Logic
& High Voltage
Generator
I/0 0
Output
Driver
I/0 7
CLE ALE
WP
Figure 2-1. K9K1208X0C (X8) ARRAY ORGANIZATION
1 Block =32 Pages
= (16K + 512) Byte
1 Page = 528 Byte
1 Block = 528 Byte x 32 Pages
= (16K + 512) Byte
1 Device = 528Bytes x 32Pages x 4,096 Blocks
= 528 Mbits
128K Pages
(=4,096 Blocks)
1st half Page Register
(=256 Bytes)
2nd half Page Register
(=256 Bytes)
8 bit
512Byte
16 Byte
16 Byte
I/O 0 ~ I/O 7
Page Register
512 Byte
I/O 0
A0
I/O 1
A1
I/O 2
A2
I/O 3
I/O 4
A4
I/O 5
A5
I/O 6
A6
I/O 7
A7
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
A3
A12
A20
*L
Column Address
Row Address
(Page Address)
A9
A10
A18
*L
A11
A19
*L
A13
A21
*L
A14
A22
*L
A15
A23
*L
A16
A24
*L
A17
A25
NOTE : Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A8 is set to "Low" or "High" by the 00h or 01h Command.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
6
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Figure 1-2. K9K1216X0C (X16) FUNCTIONAL BLOCK DIAGRAM
VCC
VSS
X-Buffers
A9 - A25
Latches
512M + 16M Bit
NAND Flash
ARRAY
& Decoders
Y-Buffers
Latches
A0 - A7
& Decoders
(256 + 8)Word x 131072
Page Register & S/A
Y-Gating
Command
Command
Register
VCC/VCCQ
VSS
I/O Buffers & Latches
Global Buffers
CE
RE
WE
Control Logic
& High Voltage
Generator
I/0 0
Output
Driver
I/0 15
CLE ALE
WP
Figure 2-2. K9K1216X0C (X16) ARRAY ORGANIZATION
1 Block =32 Pages
= (8K + 256) Word
1 Page = 264 Word
1 Block = 264 Word x 32 Pages
= (8K + 256) Word
1 Device = 264Words x 32Pages x 4096 Blocks
= 528 Mbits
128K Pages
(=4,096 Blocks)
Page Register
(=256 Words)
16 bit
256Word
8 Word
8 Word
I/O 0 ~ I/O 15
Page Register
256 Word
I/O 0
A0
I/O 1
A1
I/O 2
A2
I/O 3
I/O 4
A4
I/O 5
A5
I/O 6
A6
I/O 7
A7
I/O8 to 15
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
A3
A12
A20
L*
L*
L*
L*
L*
Column Address
Row Address
(Page Address)
A9
A10
A18
L*
A11
A19
L*
A13
A21
L*
A14
A22
L*
A15
A23
L*
A16
A24
L*
A17
A25
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
7
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
PRODUCT INTRODUCTION
The K9K12XXX0C is a 528Mbit(553,648,218 bit) memory organized as 131,072 rows(pages) by 528(X8 device) or 264(X16 device)
columns. Spare eight columns are located from column address of 512~527(X8 device) or 256~263(X16 device). A 528-byte(X8
device) or 264-word(X16 device) data register is connected to memory cell arrays accommodating data transfer between the I/O buff-
ers and memory during page read and page program operations. The memory array is made up of 16 cells that are serially con-
nected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of two NAND structured strings. A
NAND structure consists of 16 cells. Total 135168 NAND cells reside in a block. The array organization is shown in Figure 2-1,2-2.
The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory
array consists of 4096 separately erasable 16K-Byte(X8 device) or 8K-Word(X16 device) blocks. It indicates that the bit by bit erase
operation is prohibited on the K9K12XXX0C.
The K9K12XXX0C has addresses multiplexed into 8 I/Os(X16 device case : lower 8 I/Os). K9K1216X0C allows sixteen bit wide data
transport into and out of page registers. This scheme dramatically reduces pin counts while providing high performance and allows
systems upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written
through I/O′s by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and
Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one
bus cycle. For example, Reset command, Read command, Status Read command, etc require just one cycle bus. Some other com-
mands like Page Program and Copy-back Program and Block Erase, require three cycles: one cycle for setup and the other cycle for
execution. The 32M-byte(X8 device) or 16M-word(X16 device) physical space requires 25 addresses(X8 device) or 24
addresses(X16 device), thereby requiring four cycles for word-level addressing: column address, low row address and high row
address, in that order. Page Read and Page Program need the same four address cycles following the required command input. In
Block Erase operation, however, only the three row address cycles are used. Device operations are selected by writing specific com-
mands into the command register. Table 1 defines the specific commands of the K9K12XXX0C.
The device includes one block sized OTP(One Time Programmable), which can be used to increase system security or to provide
identification capabilities. Detailed information can be obtained by contact with Samsung.
Table 1. COMMAND SETS
Function
1st. Cycle
00h/01h(1)
50h
2nd. Cycle
Acceptable Command during Busy
Read 1
Read 2
Read ID
Reset
-
-
90h
-
FFh
-
10h
8Ah
-
O
Page Program
Copy-Back Program
Lock
80h
00h
2Ah
Unlock
23h
24h
-
Lock-tight
2Ch
Read Block Lock Status
Block Erase
Read Status
7Ah
-
60h
D0h
-
70h
O
NOTE : 1. The 01h command is available only on X8 device(K9K1208X0C).
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
8
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Rating
Parameter
Symbol
Unit
1.8V DEVICE
-0.6 to + 2.45
-0.2 to + 2.45
-0.2 to + 2.45
3.3V/2.65V DEVICE
-0.6 to + 4.6
VIN/OUT
VCC
Voltage on any pin relative to VSS
V
-0.6 to + 4.6
VCCQ
-0.6 to + 4.6
K9K12XXX0C-XCB0
Temperature Under Bias
-10 to +125
TBIAS
°C
K9K12XXX0C-XIB0
-40 to +125
-65 to +150
5
K9K12XXX0C-XCB0
Storage Temperature
TSTG
Ios
°C
K9K12XXX0C-XIB0
Short Circuit Current
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9K12XXX0C-GCB0,JCB0 :TA=0 to 70°C, K9K12XXX0C-GIB0,JIB0:TA=-40 to 85°C)
K9K12XXQ0C(1.8V)
K9K12XXD0C(2.65V)
K9K12XXU0C(3.3V)
Parameter
Symbol
Unit
Min
Typ.
1.8
1.8
0
Max
Min
2.4
2.4
0
Typ.
2.65
2.65
0
Max
2.9
2.9
0
Min
Typ.
3.3
3.3
0
Max
Supply Voltage
Supply Voltage
Supply Voltage
VCC
VCCQ
VSS
1.70
1.70
0
1.95
1.95
0
2.7
2.7
0
3.6
3.6
0
V
V
V
9
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
K9K12XXX0C
Parameter
Symbol
Test Conditions
1.8V
2.65V
3.3V
Unit
Min Typ Max Min Typ Max Min Typ Max
Sequential
Read
tRC=50ns, CE=VIL
IOUT=0mA
Operat-
ing
ICC1
-
10
20
-
10 20
-
10
30
Current Program
ICC2
ICC3
-
-
-
-
10
10
20
20
-
-
10 20
10 20
-
-
10
10
40
40
mA
Erase
CE=VIH, WP=LOCKPRE=0V/VCC
Stand-by Current(TTL)
ISB1
-
-
-
1
-
-
-
1
-
-
-
1
Stand-by Cur-
rent(CMOS)
ISB2 CE=VCC-0.2, WP=LOCKPRE=0V/VCC
10
50
10 50
10
50
µA
Input Leakage Current
Output Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
-
-
±10
±10
-
-
-
-
±10
±10
-
-
-
-
±10
±10
ILO
VOUT=0 to Vcc(max)
VCCQ
-0.4
VCCQ
-0.4
VCCQ
+0.3
VCCQ
+0.3
VCCQ
+0.3
I/O pins
-
-
-
-
-
-
2.0
2.0
-
-
-
Input High Voltage
VIH*
VIL*
VCC
-0.4
VCC
-0.4
VCC
VCC
Vcc
Except I/O pins
+0.3
+0.3
+0.3
Input Low Voltage, All
inputs
-
-0.3
0.4 -0.3
0.5 -0.3
0.8
V
K9K12XXQ0C :IOH=-100µA
Output High Voltage
Level
VCCQ
-0.1
VCCQ
VOH K9K12XXD0C :IOH=-100µA
K9K12XXU0C :IOH=-400µA
-
-
-
-
-
-
0.4
-
2.4
-
-
-
-
-0.4
K9K12XXQ0C :IOL=100uA
VOL K9K12XXD0C :IOL=100µA
K9K12XXU0C :IOL=2.1mA
Output Low Voltage
Level
-
0.1
-
-
0.4
-
K9K12XXQ0C :VOL=0.1V
Output Low Current(R/B) IOL(R/B) K9K12XXD0C :VOL=0.1V
K9K12XXU0C :VOL=0.4V
3
4
3
4
8
10
mA
10
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
VALID BLOCK
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
NVB
4026
-
4096
Blocks
NOTE :
1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program
factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
cycles.
3. Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
AC TEST CONDITION
(K9K12XXX0C-GCB0,JCB0 :TA=0 to 70°C, K9K12XXX0C-GIB0,JCB0 :TA=-40 to 85°C
K9K12XXQ0C : Vcc=1.70V~1.95V , K9K12XXD0C : Vcc=2.4V~2.9V , K9K12XXU0C : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9K12XXQ0C
0V to VccQ
5ns
K9K12XXD0C
0V to VccQ
5ns
K9K12XXU0C
0.4V to 2.4V
5ns
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
VccQ/2
VccQ/2
1.5V
K9K12XXQ0C:Output Load (VccQ:1.8V +/-10%)
K9K12XXD0C:Output Load (VccQ:2.65V +/-10%) 1 TTL GATE and CL=30pF1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF
K9K12XXU0C:Output Load (VccQ:3.0V +/-10%)
K9K12XXU0C:Output Load (VccQ:3.3V +/-10%)
-
-
1 TTL GATE and CL=100pF
CAPACITANCE(TA=25°C, VCC=1.8V/2.65V/3.3V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
Unit
pF
Input/Output Capacitance
Input Capacitance
CI/O
VIL=0V
-
-
20
20
CIN
VIN=0V
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
H
L
ALE
L
CE
L
WE
RE
H
LOCKPRE
WP
X
Mode
X
X
X
X
X
X
X
Command Input
Read Mode
Write Mode
H
L
L
H
X
Address Input(4clock)
Command Input
H
L
L
H
H
H
L
L
H
H
Address Input(4clock)
L
L
H
H
Data Input
L
L
L
H
X
X
Data Output
X
X
X
H
X
During Read(Busy) on the devices
X
X
X
X
X
X
X
X
X
H
X
X
X
X
X
X
X
X
X
X
X
H
During Program(Busy)
During Erase(Busy)
Write Protect
H
L
X(1)
X
(2
(2)
Stand-by
0V/VCC
0V/VCC
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
11
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
PROGRAM/ERASE CHARACTERISTICS
Parameter
Symbol
tPROG
Min
Typ
Max
500
10
2
Unit
µs
Program Time
-
-
-
-
-
200
Dummy Busy Time for the Lock or Lock-tight Block
tLBSY
5
-
µs
Main Array
Spare Array
cycles
cycles
ms
Number of Partial Program Cycles
in the Same Page
Nop
-
3
Block Erase Time
tBERS
2
3
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
Min
Max
Unit
K9K1208X0C
K9K12XXD0C
K9K12XXU0C
K9K1208X0C
K9K12XXD0C
K9K12XXU0C
Parameter
Symbol
K9K1216Q0C
K9K1216Q0C
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
tCLS
tCLH
tCS
0
10
0
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
0
tCH
10
25(1)
0
10
40
0
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
tWP
tALS
tALH
tDS
10
20
10
50
15
10
20
10
60
20
tDH
tWC
tWH
NOTE: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
12
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
AC CHARACTERISTICS FOR OPERATION
Min
Max
K9K1208X0C
K9K12XXD0C
K9K12XXU0C
K9K1208X0C
K9K12XXD0C
K9K12XXU0C
Parameter
Symbol
Unit
K9K1216Q0C
K9K1216Q0C
Data Transfer from Cell to Register
ALE to RE Delay
tR
tAR
-
10
10
20
25
-
-
10
10
20
40
-
10
10
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
-
-
CLE to RE Delay
tCLR
tRR
-
-
Ready to RE Low
-
-
RE Pulse Width
tRP
-
-
WE High to Busy
tWB
100
100
Read Cycle Time
tRC
50
-
60
-
-
-
30/35(1)
RE Access Time
tREA
tCEA
tRHZ
tCHZ
tOH
40
CE Access Time
-
-
45
55
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
-
-
30
30
-
-
20
20
15
15
0
15
20
0
-
-
tREH
tIR
-
-
Output Hi-Z to RE Low
WE High to RE Low
-
-
tWHR1
tWHR2
tRST
60
100
-
60
-
-
WE High to RE Low in Block Lcok
Device Resetting Time(Read/Program/Erase)
100
-
-
5/10/500(2)
5/10/500(2)
-
NOTE: 1. K9F5608Q0C tREA = 35ns.
2. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
13
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
NAND Flash Technical Notes
Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung.
The information regarding the initial invalid block(s) is so called as the initial invalid block information. Devices with initial invalid
block(s) have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid
block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a
select transistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is
placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase cycles.
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The
initial invalid block(s) status is defined by the 6th byte(X8 device) or 1st word(X16 device) in the spare area. Samsung makes sure
that either the 1st or 2nd page of every initial invalid block has non-FFh(X8 device) or non-FFFFh(X16 device) data at the column
address of 517(X8 device) or 256 and 261(X16 device). Since the initial invalid block information is also erasable in most cases, it is
impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the initial invalid
block(s) based on the initial invalid block information and create the initial invalid block table via the following suggested flow
chart(Figure 3). Any intentional erasure of the initial invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
Check "FFh" at the column address
517(X8 device) or 256 and 261(X16 device)
of the 1st and 2nd page in the block
*
No
No
Create (or update)
Initial
Invalid Block(s) Table
Check "FFh" ?
Yes
Last Block ?
Yes
End
Figure 3. Flow chart to create initial invalid block table.
14
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Error in write or read operation
Within its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-
ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be
employed. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be
reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Erase Failure
Detection and Countermeasure sequence
Status Read after Erase --> Block Replacement
Status Read after Program --> Block Replacement
Verify ECC -> ECC Correction
Write
Read
Program Failure
Single Bit Failure
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
ECC
Program Flow Chart
Start
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
No
I/O 6 = 1 ?
or R/B = 1 ?
Yes
*
No
Program Error
I/O 0 = 0 ?
Yes
Program Completed
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
15
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Start
Write 60h
Write 00h
Write Block Address
Write Address
Read Data
Write D0h
Read Status Register
ECC Generation
No
No
I/O 6 = 1 ?
or R/B = 1 ?
Reclaim the Error
Verify ECC
Yes
Yes
*
No
Page Read Completed
Erase Error
I/O 0 = 0 ?
Yes
Erase Completed
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Block Replacement
Block A
1st
2
{
(n-1)th
nth
an error occurs.
(page)
Buffer memory of the controller.
Block B
1st
1
{
(n-1)th
nth
(page)
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4
Do not further erase Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
16
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Pointer Operation of K9K1208X0C(X8)
Samsung NAND Flash has three address pointer commands as a substitute for the two most significant column addresses. ’00h’
command sets the pointer to ’A’ area(0~255byte), ’01h’ command sets the pointer to ’B’ area(256~511byte), and ’50h’ command sets
the pointer to ’C’ area(512~527byte). With these commands, the starting column address can be set to any of a whole
page(0~527byte). ’00h’ or ’50h’ is sustained until another address pointer command is inputted. ’01h’ command, however, is effective
only for one operation. After any operation of Read, Program, Erase, Reset, Power_Up is executed once with ’01h’ command, the
address pointer returns to ’A’ area by itself. To program data starting from ’A’ or ’C’ area, ’00h’ or ’50h’ command must be inputted
before ’80h’ command is written. A complete read operation prior to ’80h’ command is not necessary. To program data starting from
’B’ area, ’01h’ command must be inputted right before ’80h’ command is written.
Table 2. Destination of the pointer
Command
Pointer position
Area
"A" area
"B" area
"C" area
(00h plane)
(01h plane)
(50h plane)
00h
01h
50h
0 ~ 255 byte
256 ~ 511 byte
512 ~ 527 byte
1st half array(A)
2nd half array(B)
spare array(C)
256 Byte
256 Byte
16 Byte
"A"
"B"
"C"
Internal
Page Register
Pointer select
commnad
(00h, 01h, 50h)
Pointer
Figure 4. Block Diagram of Pointer Operation
(1) Command input sequence for programming ’A’ area
The address pointer is set to ’A’ area(0~255), and sustained
Address / Data input
Address / Data input
80h 10h
00h
80h
10h
00h
’A’,’B’,’C’ area can be programmed.
’00h’ command can be omitted.
It depends on how many data are inputted.
(2) Command input sequence for programming ’B’ area
The address pointer is set to ’B’ area(256~511), and will be reset to
’A’ area after every program operation is executed.
Address / Data input
Address / Data input
80h 10h
01h
80h
10h
01h
’B’, ’C’ area can be programmed.
It depends on how many data are inputted.
’01h’ command must be rewritten before
every program operation
(3) Command input sequence for programming ’C’ area
The address pointer is set to ’C’ area(512~527), and sustained
Address / Data input
Address / Data input
80h 10h
50h
80h
10h
50h
Only ’C’ area can be programmed.
’50h’ command can be omitted.
17
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Pointer Operation of K9K1216X0C(X16)
Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. ’00h’ command
sets the pointer to ’A’ area(0~255word), and ’50h’ command sets the pointer to ’B’ area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). ’00h’ or ’50h’ is sustained until another address pointer com-
mand is inputted. To program data starting from ’A’ or ’B’ area, ’00h’ or ’50h’ command must be inputted before ’80h’ command is writ-
ten. A complete read operation prior to ’80h’ command is not necessary.
Table 3. Destination of the pointer
Command
Pointer position
Area
"A" area
(00h plane)
"B" area
(50h plane)
00h
50h
0 ~ 255 word
256 ~ 263 word
main array(A)
spare array(B)
256 Word
8 Word
"A"
"B"
Internal
Page Register
Pointer select
command
(00h, 50h)
Pointer
Figure 5. Block Diagram of Pointer Operation
(1) Command input sequence for programming ’A’ area
The address pointer is set to ’A’ area(0~255), and sustained
Address / Data input
Address / Data input
80h 10h
00h
80h
10h
00h
’A’,’B’ area can be programmed.
’00h’ command can be omitted.
It depends on how many data are inputted.
(2) Command input sequence for programming ’B’ area
The address pointer is set to ’B’ area(256~263), and sustained
Address / Data input
Address / Data input
80h 10h
50h
80h
10h
50h
Only ’B’ area can be programmed.
’50h’ command can be omitted.
18
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte(x8 device), 264word(x16 device) page registers are utilized as seperate buffers for this operation and the system design gets
more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during
the data-loading and reading would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’t-care.
CLE
CE don’t-care
CE
WE
ALE
I/Ox
80h
Start Add.(4Cycle)
Data Input
Data Input
10h
tCS
tCH
tCEA
CE
RE
CE
tREA
tWP
tOH
WE
I/O0~15
out
Figure 7. Read Operation with CE don’t-care.
CLE
CE
CE don’t-care
RE
ALE
tR
R/B
WE
I/Ox
Data Output(sequential)
00h
Start Add.(4Cycle)
19
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
I/O
I/Ox
DATA
Device
Data In/Out
~528byte
~264word
K9K1208X0C(X8 device)
K9K1216X0C(X16 device)
I/O 0 ~ I/O 7
I/O 0 ~ I/O 151)
NOTE: 1. I/O8~15 must be set to "0" during command or address input.
I/O8~15 are used only for data bus.
Command Latch Cycle
CLE
tCLH
tCH
tCLS
tCS
CE
tWP
WE
tALS
tALH
ALE
tDH
tDS
Command
I/Ox
Address Latch Cycle
tCLS
CLE
tCS
tWC
tWC
tWC
CE
tCH
tWP
tWP
tWP
tWP
WE
tWH
tALH
tALS
tWH
tALH
tWH
tALH
tALS
tALH
tALS
tALS
ALE
I/OX
tDH
tDH
tDH
tDH
tDS
tDS
tDS
tDS
A0~A7
A9~A16
A17~A24
A25
20
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Input Data Latch Cycle
tCLH
CLE
CE
tCH
tWC
tALS
ALE
tWP
tWP
tWP
WE
tWH
tDH
tDH
tDH
tDS
tDS
tDS
I/Ox
DIN n
DIN 0
DIN 1
Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)
tRC
CE
tCHZ*
tOH
tREH
tREA
tREA
tREA
tRP
RE
tRHZ*
tRHZ*
tOH
I/Ox
Dout
Dout
Dout
tRR
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
21
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Status Read Cycle
tCLR
CLE
CE
tCLS
tCS
tCLH
tCH
tWP
WE
tCEA
tCHZ
tOH
tWHR1
RE
tRHZ
tOH
tDH
tREA
tDS
tIR
Status Output
I/Ox
70h
READ1 OPERATION(READ ONE PAGE)
CLE
CE
tCHZ
tOH
tWC
WE
tWB
tAR
ALE
tRHZ
tOH
tR
tRC
RE
N Address
tRR
A9 ~ A16
A17 ~ A24
00h or 01h A0 ~ A7
Dout N
Dout N+1 Dout N+2
Dout m
A25
I/OX
R/B
Column
Address
Page(Row)
Address
Busy
X8 device : m = 528 , Read CMD = 00h or 01h
X16 device : m = 264 , Read CMD = 00h
22
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Read1 Operation(Intercepted by CE)
CLE
CE
WE
ALE
RE
tWB
tCHZ
tOH
tAR
tR
tRC
tRR
A9 ~ A16 A17 ~ A24
Dout N+2
00h or 01h A0 ~ A7
Dout N
Dout N+1
A25
I/OX
Page(Row)
Address
Column
Address
Busy
R/B
Read2 Operation(Read One Page)
CLE
CE
WE
ALE
RE
tR
tWB
tAR
tRR
Dout
n+M
50h
A9 ~ A16 A17 ~ A24
n+m
A0 ~ A7
A25
I/OX
R/B
Selected
Row
M Address
A0~A3 : Valid Address
A4~A7 : Don′t care
16
512
Start
address M
23
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Page Program Operation
CLE
CE
tWC
tWC
tWC
WE
ALE
RE
tPROG
tWB
Din
N
Din
527
A25
10h
80h
A0 ~ A7 A9 ~ A16 A17 ~ A24
70h
I/O0
I/OX
R/B
Sequential Data Column
Input Command
Program
Command
1 up to 528 Byte Data
Serial Input
Read Status
Command
Page(Row)
Address
Address
I/O0=0 Successful Program
I/O0=1 Error in Program
24
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Copy-Back Program Operation
CLE
CE
tWC
WE
ALE
RE
tWB
tPROG
tWB
tR
8Ah
00h
A0~A7 A9~A16 A17~A24
A25
10h
70h
I/O0
A0~A7 A9~A16 A17~A24 A25
I/OX
R/B
Column
Column
Read Status
Command
Page(Row)
Page(Row)
Address
Address
Address
Address
Busy
Busy
Copy-Back Data
Input Command
I/O0=0 Successful Program
I/O0=1 Error in Program
BLOCK ERASE OPERATION (ERASE ONE BLOCK)
CLE
CE
tWC
WE
tBERS
tWB
ALE
RE
60h
A9 ~ A16 A17 ~ A24
DOh
70h
I/O 0
A25
I/OX
R/B
Page(Row)
Address
Busy
I/O0=0 Successful Erase
Read Status I/O0=1 Error in Erase
Command
Auto Block Erase Setup Command
Erase Command
25
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
MANUFACTURE & DEVICE ID READ OPERATION
CLE
CE
WE
ALE
tAR
RE
tREA
Device
Code*
I/Ox
90h
00h
ECh
Read ID Command
Address. 1cycle
Maker Code
Device Code
Device
Device Code*
K9K1208Q0C
36h
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
76h
76h
XX46h
XX56h
XX56h
26
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
DEVICE OPERATION
PAGE READ
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command regis-
ter along with three address cycles. Once the command is latched, it does not need to be written for the following page read opera-
tion. Two types of operations are available : random read, serial page read.
The random read mode is enabled when the page address is changed. The 528 bytes(X8 device) or 264 words(X16 device) of data
within the selected page are transferred to the data registers in less than 10µs(tR). The system controller can detect the completion of
this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the registers, they may be read out in
50ns cycle time by sequentially pulsing RE. High to low transitions of the RE clock output the data starting from the selected column
address up to the last column address[column 511/ 527(X8 device) 255 /263(X16 device) depending on the state of GND input pin].
The way the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of 512
~527 bytes(X8 device) or 256~263 words(X16 device) may be selectively accessed by writing the Read2 command with GND input
pin low. Addresses A0~A3(X8 device) or A0~A2(X16 device) set the starting address of the spare area while addresses A4~A7 are
ignored in X8 device case or A3~A7 must be "L" in X16 device case. The Read1 command is needed to move the pointer back to the
main area. Figures 8, 9 show typical sequence and timings for each read operation.
Figure 8. Read1 Operation
CLE
CE
WE
ALE
tR
R/B
RE
I/Ox
Start Add.(4Cycle)
00h
Data Output(Sequential)
X8 device : A0 ~ A7 & A9 ~ A25
X16 device : A0 ~ A7 & A9 ~ A25
(00h Command)
Main array
(01h Command)
1)
1st half array 2st half array
Data Field
Spare Field
Data Field
Spare Field
NOTE: 1) After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half
array (00h) at next cycle. 01h command is only available on X8 device(K9K1208X0C).
27
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Figure 9. Read2 Operation
CLE
CE
WE
ALE
R/B
RE
tR
Start Add.(4Cycle)
I/Ox
50h
Data Output(Sequential)
Spare Field
X8 device : A0 ~ A3 & A9 ~ A25
X16 device : A0 ~ A2 & A9 ~ A25
X8 device : A4 ~ A7 Don’t care
X16 device : A3 ~ A7 are "L"
Main array
Data Field
Spare Field
28
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte/word or consecutive
bytes/words up to 528(X8 device) or 264(X16 device), in a single page program cycle. The number of consecutive partial page program-
ming operation within the same page without an intervening erase operation should not exceed 2 for main array and 3 for spare array.
The addressing may be done in any random order in a block. A page program cycle consists of a serial data loading period in which
up to 528 bytes(X8 device) or 264 words(X16 device) of data may be loaded into the page register, followed by a non-volatile program-
ming period where the loaded data is programmed into the appropriate cell. About the pointer operation, please refer to the attached
technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the three cycle address input and
then serial data loading. The words other than those to be programmed do not need to be loaded.The Page Program confirm com-
mand(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the pro-
gramming process. The internal write controller automatically executes the algorithms and timings necessary for program and verify,
thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be
entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle by mon-
itoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid
while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 10). The
internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read
Status command mode until another valid command is written to the command register.
Figure 10. Program Operation
tPROG
R/B
I/Ox
Pass
80h
Address & Data Input
I/O0
Fail
10h
70h
COPY-BACK PROGRAM
The copy-back program is configured to quickly and efficiently rewrite data stored in one page within the array to another page within
the same array without utilizing an external memory. Since the time-consuming sequently-reading and its re-loading cycles are
removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of
the block also need to be copied to the newly assigned free block. The operation for performing a copy-back is a sequential execution
of page-read without burst-reading cycle and copying-program with the address of destination page. A normal read operation with
"00h" command with the address of the source page moves the whole 528bytes/264words(X8 device:528bytes, X16
device:264words) data into the internal buffer. As soon as the Flash returns to Ready state, copy-back programming command "8Ah"
may be given with three address cycles of target page followed. The data stored in the internal buffer is then programmed directly into
the memory cells of the destination page. Once the Copy-Back Program is finished, any additional partial page programming into the
copied pages is prohibited before erase. Since the memory array is internally partitioned into four different planes, copy-back program
is allowed only within the same memory plane. Thus, A14 and A25, the plane address, of source and destination page address must
be the same."When there is a program-failure at Copy-Back operation, error is reported by pass/fail status. But if the soure
page has a bit error for charge loss, accumulated copy-back operations could also accumulate bit errors. For this reason,
two bit ECC is recommended for copy-back operation."
Figure 11. Copy-Back Program Operation
tR
tPROG
R/B
I/Ox
Add.(4Cycles)
Pass
Add.(4Cycles)
00h
I/O0
Fail
8Ah
70h
Source Address
Destination Address
29
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
BLOCK ERASE
The Erase operation is done on a block basis. Block address loading is accomplished in three cycles initiated by an Erase Setup com-
mand(60h). Only address A14 to A25 is valid while A9 to A13 is ignored. The Erase Confirm command(D0h) following the block address
loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that memory
contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When the
erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 12 details the sequence.
Figure 12. Block Erase Operation
tBERS
R/B
Pass
60h
I/O0
Fail
I/Ox
70h
Address Input(3Cycle)
Block Add. : A9 ~ A25
D0h
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 4 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before serial access cycle.
Table4. Read Status Register Definition
I/O #
Status
Definition
"0" : Successful Program / Erase
I/O 0
Program / Erase
"1" : Error in Program / Erase
I/O 1
I/O 2
"0"
"0"
"0"
"0"
"0"
Reserved for Future
Use
I/O 3
I/O 4
I/O 5
I/O 6
Device Operation
Write Protect
Not use
"0" : Busy
"1" : Ready
"1" : Not Protected
I/O 7
"0" : Protected
Don’t care
I/O 8~15
30
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
READ ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Two read cycles sequentially output the manufacture code(ECh), and the device code respectively. The command register
remains in Read ID mode until further commands are issued to it. Figure 13 shows the operation sequence.
Figure 13. Read ID Operation
CLE
tCEA
CE
WE
tAR
ALE
RE
tWHR1
tREA
Device
Code*
I/Ox
ECh
00h
90h
Address. 1cycle
Maker code
Device code
Device
Device Code*
K9K1208Q0C
36h
76h
K9K1208D0C
K9K1208U0C
K9K1216Q0C
76h
XX46h
K9K1216D0C
K9K1216U0C
XX56h
XX56h
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 5 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 14 below.
Figure 14. RESET Operation
tRST
R/B
I/Ox
FFh
Table5. Device Status
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
31
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
> In high state of LOCKPRE pin, Block lock mode and Power on Auto read are enabled, otherwise it is
regarded as NAND Flash without LOCKPRE pin.
Block Lock Mode
Block Lock mode is enabled while LOCKPRE pin state is high, which is to offer protection features for NAND Flash data. The Block
Lock mode is divided into Unlock, Lock, Lock-tight operation. Consecutive blocks protects data by allowing those blocks to be locked
or lock-tighten with no latency. This block lock scheme offers two levels of protection. The first allows software control(command input
method) of block locking that is useful for frequently changed data blocks, while the second requires hardware control(WP low pulse
input method) before locking can be changed that is useful for protecting infrequently changed code blocks.
The followings summarized the locking functionality.
- All blocks are in a locked state on power-up. Unlock sequence can unlock the locked blocks.
- The Lock-tight command locks blocks and prevents from being unlocked.
And Lock-tight state can be returned to lock state only by Hardware control(WP low pulse input).
1. Block lock operation
1) Lock
- Command Sequence: Lock block Command(2Ah)
- All blocks default to locked by power-up and Hardware control(WP low pulse input)
- Partial block lock is not available; Lock block operation is based on all block unit
- Unlocked blocks can be locked by using the Lock block command, and a lock block’s status can be changed to unlock or lock-tight
using the appropriate commands
WP
CLE
CE
WE
I/Ox
2Ah
Lock Command
32
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
2) Unlock
- Command Sequence: Unlock block Command(23h) + Start block address + Command(24h) + End block address
- Unlocked blocks can be programmed or erased.
- An unlocked block’s status can be changed to the locked or lock-tighten state using the appropriate commands.
- Only one consecutive area can be released to unlock state from lock state; Unlocking multi area is not available.
- Start block address must be nearer to the logical LSB(Least Significant Bit) than End blcok address.
- One block is selected for unlocking block when Start block address is same as End block address.
WP
CLE
CE
WE
ALE
I/Ox
Add.1
Add.2
Add.3
23h
Add.1
Add.2
Add.3
24h
End Block Address 3 cycles
Unlock Command
Unock Command
Start Block Address 3cycles
3) Lock-tight
- Command Sequence: Lock-tight block Command(2Ch)
- Lock-tighten blocks offer the user an additional level of write protection beyond that of a regular lock block. A block that is lock-
tighten can’t have it’s state changed by software control, only by hardware control(WP low pulse input); Unlocking multi area is not
available
- Only locked blocks can be lock-tighten by lock-tight command.
WP
CLE
CE
WE
I/Ox
2Ch
Lock-tight Command
33
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
WPx = H &
Unlock block Command (23h) + Start Block Address
+ Command (24h) + End Block Address
Lock
unlock
Lock
WPx = H &
Unlock block Command (23h) + Start Block Address
+ Command (24h) + End Block Address
Block Lock reset
WPx = L (>100ns)
WPx = H &
Lock block command (2Ah)
Lock
Power-up
WPx = H &
Lock
unlock
Lock
Lock-tight block command (2Ch)
Block Lock reset
WPx = L (>100ns)
WPx = H &
Lock-tight block command (2Ch)
Lock-tight
Lock-tight
unlock
Lock-tight
Figure 15. State diagram of Block Lock
Program/Erase OPERATION(In Locked or Lock-tighten Block)
tLBSY
R/B
Address(&Data Input)
I/Ox
60h(80h)
D0h(10h)
Locked or Lock-tighten Block address
On the program or erase operation in Locked or Lock-tighten block, Busy state holds 1~10µs(tLBSY)
34
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
2. Block Lock Status Read
Block Lock Status can be read on a block basis, which may be read to find out whether designated block is available to be pro-
grammed or erased. After writing 7Ah command to the command register. and block address to be checked, a read cycle outputs the
content of the Block Lock Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control
allows the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or
CE does not need to be toggled for updated status. Blcok Lock Status Read is prohibited while the device is busy state.
Refer to table 6 for specific Status Register definitions. The command register remains in Block Lock Status Read mode until further
commands are issued to it. In high state of LOCKPRE pin, write protection status can be checked by Block Lock Status
Read(7Ah) while in low state by Status Read(70h).
IO7~IO3
X
IO2(Unlock)
0
IO1(Lock)
1
IO0(Lock-tight)
0
Read 1) block
case
Read 2) block
case
X
X
X
1
0
1
1
0
0
0
1
1
Read 3) block
case
Read 4) block
case
(1)Lock
(2)unlock
(1)Lock
(3)Lock-tight
(3)Lock-tight
(4)unlock
(1)Lock
(2)Unlock
(3)Lock-tight
Table6. Block Lock Status Register definitions
WP
CLE
CE
WE
ALE
tWHR2
RE
I/Ox
7Ah
Add.1
Add.2
Add.3
Dout
Block Lock Status
Read Block Lock
status Command
Block Address 3cycle
35
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. LOCKPRE pin controls activation of
auto- page read function. Auto-page read function is enabled only when LOCKPRE pin is logic high state. Serial access may be done
after power-on without latency. Power-On Auto Read mode is available only on 3.3V device(K9K12XXU0C).
Figure 16. Power-On Auto-Read (3.3V device only)
~ 1.8V
VCC
CLE
CE
WE
ALE
LOCKPRE
R/B
tR
RE
I/OX
1st
2nd
3rd
....
n th
36
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can be
determined by the following guidance.
Rp
ibusy
VCC
1.8V device - VOL : 0.1V, VOH : VccQ-0.1V
2.65V device - VOL : 0.4V, VOH : VccQ-0.4V
3.3V device - VOL : 0.4V, VOH : 2.4V
Ready Vcc
R/B
VOH
open drain output
CL
VOL
Busy
tf
tr
GND
Device
Figure 17. Rp vs tr ,tf & Rp vs ibusy
37
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
@ Vcc = 1.8V, Ta = 25°C , CL = 30pF
Ibusy
300n
3m
1.7
200n
100n
2m
1m
120
0.85
60
90
tr
30
0.57
1.7
0.43
1.7
1.7
2K
tf
1.7
4K
1K
3K
Rp(ohm)
@ Vcc = 2.65V, Ta = 25°C , CL = 30pF
300n
3m
2.3
Ibusy
200n
100n
1.1
2m
1m
120
90
tr
60
30
0.75
2.3
2.3
2.3
1K
0.55
tf
2.3
4K
2K
3K
Rp(ohm)
@ Vcc = 3.3V, Ta = 25°C , CL = 100pF
400
2.4
Ibusy
300n
3m
300
1.2
200n
100n
200
0.8
2m
1m
tr
100
3.6
0.6
3.6
3.6
2K
3.6
tf
4K
1K
3K
Rp(ohm)
Rp value guidance
1.85V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
Rp(min, 1.8V part) =
=
3mA + ΣIL
VCC(Max.) - VOL(Max.)
2.5V
Rp(min, 2.65V part) =
Rp(min, 3.3V part) =
=
=
IOL + ΣIL
3mA + ΣIL
VCC(Max.) - VOL(Max.)
3.2V
IOL + ΣIL
8mA + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
38
K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.65V device), 2V(3.3V device). WP pin provides hard-
ware protection and is recommended to be kept at VIL during power-up and power-down and recovery time of minimum 10µs is
required before internal circuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for
program/erase provides additional software protection.
Figure 18. AC Waveforms for Power Transition
1.8V device : ~ 1.5V
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V
1.8V device : ~ 1.5V
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V
VCC
High
WP
WE
10µs
39
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SI9137
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