KSK211-G [SAMSUNG]
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN;
| 型号： | KSK211-G |
| 厂家： | 
SAMSUNG |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN 晶体 放大器 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 |
| 文件： | 总4页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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