M395T5160CZ4-CE66 [SAMSUNG]
DDR DRAM Module, 512MX72, CMOS, ROHS COMPLIANT, FBDIMM-240;型号: | M395T5160CZ4-CE66 |
厂家: | SAMSUNG |
描述: | DDR DRAM Module, 512MX72, CMOS, ROHS COMPLIANT, FBDIMM-240 动态存储器 双倍数据速率 |
文件: | 总28页 (文件大小:542K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FBDIMM
DDR2 SDRAM
DDR2 Fully Buffered DIMM
240pin FBDIMMs based on 1Gb C-die
60FBGA with Lead-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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FBDIMM
DDR2 SDRAM
Table of Contents
1.0 FEATURES .....................................................................................................................................4
2.0 FBDIMM GENERALS .....................................................................................................................5
2.1 FB-DIMM Operation Overview ..........................................................................................................5
2.2 FB-DIMM Channel Frequency Scaling ...............................................................................................6
2.3 FB-DIMM Clocking Scheme .............................................................................................................7
2.4 FB-DIMM Protocol ..........................................................................................................................7
2.5 Southbound Command Delivery ......................................................................................................8
2.6 Basic Timing Diagram .....................................................................................................................9
2.7 Advanced Memory Buffer Block Diagram ........................................................................................11
2.8 Interfaces ....................................................................................................................................12
3.0 FBD HIGH-SPEED DIFFERENTIAL POINT TO POINT LINK (at 1.5 V) INTERFACE ...............12
3.1 DDR2 Channel .............................................................................................................................12
3.2 SMBus Slave Interface ..................................................................................................................12
3.3 FBD Channel Latency ...................................................................................................................13
3.4 Peak Theoretical Throughput .........................................................................................................13
3.5 Hot-add .......................................................................................................................................13
3.6 Hot remove ..................................................................................................................................13
3.7 Hot replace ..................................................................................................................................13
4.0 PIN CONFIGUREATION ..............................................................................................................14
5.0 FBDIMM FUNCTIONAL BLOCK DIAGRAM ...............................................................................16
5.1 2GB, 256Mx72 Module - M395T5663CZ4 ........................................................................................16
5.2 4GB, 512Mx72 Module - M395T5160CZ4.........................................................................................17
6.0 ELECTRICAL CHARACTERISTICS ............................................................................................18
7.0 CHANNEL INITIALIZATION ........................................................................................................24
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FBDIMM
DDR2 SDRAM
Revision History
Revision
Month
Year
2007
2007
2007
2007
2007
2007
2008
History
1.0
1.1
March
April
- First Released.
- Added 2GB density
1.2
April
- Changed AMB device operation temperature symbol(Tj to Tcase)
- Corrected Typo
1.3
April
1.4
June
- Added 800 FBD
1.5
1.52
November
April
- Changed Ordering Information and Added AL Feature
- Corrected mechanical Dimension
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FBDIMM
DDR2 SDRAM
1.0 FEATURES
- 240pin fully buffered dual in-line memory module (FB-
- Serial presence detect with EEPROM
DIMM)
- 8 Banks
- 3.2Gb/s, 4.0Gb/s, 4.8Gb/s link transfer rate
- 1.8V +/- 0.1V Power Supply for DRAM VDD/VDDQ
- 1.5V +0.075/-0.045V Power Supply for AMB VCC
- 3.3V +/- 0.3V Power Supply for VDDSPD
- Buffer Interface with high-speed differential point-to-
point Link at 1.5 volt
- Channel error detection & reporting
- Channel fail over mode support
- Posted CAS
- Programmable CAS Latency: 3, 4, 5, 6
- Programmable Additive Latency: 0, 1, 2, 3, 4, 5
- Automatic DDR2 DRAM bus and channel calibration
- MBIST and IBIST Test functions
- Hot add-on and Hot Remove Capability
- Transparent mode for DRAM test support
Table 1 : Ordering Information
Type of
Number
Part Number
Density Organization
Component Composition
AMB
Heat
Height
of Rank
Spreader
M395T5663CZ4-CD56/E66
M395T5663CZ4-CD51/E61
M395T5160CZ4-CD56/E66/F76
M395T5160CZ4-CD55/E65
M395T5160CZ4-CD51/E61
Note :
IDT C1
IDT A1.5
IDT C1
2GB
4GB
256M x 72
512M x 72
128Mx8(K4T1G084QC) *18EA
2
Full Module 30.35mm
256Mx4(K4T1G044QC) *36EA
2
Intel D1
IDT A1.5
1. “Z” of Part number(11th digit) stands for Lead-free products.
2. The last digit stands for AMB.
Table 2 : Performance range
F7(DDR2-800)
E6(DDR2-667)
D5(DDR2-533)
533
Unit
Mbps
CK
DDR2 DRAM Speed
CL-tRCD-tRP
800
667
6-6-6
5-5-5
4-4-4
Table 3 : Address Configuration
Organization
128Mx8(1Gb) based Module
256Mx4(1Gb) based Module
Row Address
Column Address
Bank Address
BA0-BA2
Auto Precharge
A0-A13
A0-A13
A0-A9
A10
A10
A0-A9, A11
BA0-BA2
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FBDIMM
DDR2 SDRAM
2.0 FBDIMM GENERALS
2.1 FB-DIMM Operation Overview
FB-DIMM (Fully Buffered Dual in Line Memory Module) is designed for the applications which require higher data transfer bandwidth and
scalable memory capacity. The memory slot access rate per channel decreases as the memory bus speed increases, resulting in limited
density build-up as channel speeds increase with memory system having the stub-bus architecture. FB-DIMM solution is intended to
eliminate this stub-bus channel bottleneck by using point-to-point links that enable multiple memory modules to be connected serially to
a given channel.
Memory system architecture perspective, FB-DIMM is fully differentiated from Registered DIMM and Unbuffered DIMM. A lot of new
technologies are integrated into this solution in order to achieve this scalable higher speed memory solution. Serial link interface with
packet data format and dedicated read/write paths are key attribute in FB-DIMM protocol. Point to Point interconnect with fully differential
signaling and de-emphasis scheme are key attribute in FBD channel link. Clock recovery by using data stream is key attribute in FBD
clocking. FB-DIMM supports both clock resync and resampling mode options. CRC (Cyclic Redundancy Check) bits are transferred with
data stream for reliability at high speed data transaction. Failover mechanism supports system running with dynamic IO failure. Finally all
FB-DIMM is connected in daisy chain manner. Thus, every interconnection between AMB (advanced memory buffer) to AMB, AMB to
Host and AMB to DRAM, is point to point interconnection which allows higher data transfer bandwidth.
Figure 1 shows a lot of new technologies integrated with FBD solution.
Figure 1 : FB-DIMM Memory System Overview
DRAM
Two unidirectional links
Protocol Packet
DRAM
- Northbound
- Southbound
ADDR.CMD, DATA
DQs ADDR CLK
CMD
Daisy Chain
Connection
Upto 8 AMB
SB (ADDR, CMD, Wdata)
NB(Rdata)
Rx
Tx
Clk_Ref
Tx
Rx
Rx
Tx
Tx
AMB
AMB
Rx
Host
ADDR
CMD
DQs
CLK
DRAM
DRAM
DIMM Topology
P2P Interconnect
- LVDS
Reliability
Fly-by CLK, CMD
Clock Recovery
- CRC fail-over
- De-Emphasis
FIFO
Buffer
Clock
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FBDIMM
DDR2 SDRAM
2.2 FB-DIMM Channel Frequency Scaling
There are many frequency parameters including reference clock frequency, DRAM clock frequency, DRAM data transfer rate, channel
transfer rate and channel unit interval. All of frequency parameters are scaled with a certain gear ratio. External clock source provides
reference clock input to AMB and Host. External clock source is relatively slower than channel and DRAM frequency. Thus, AMB dou-
bles external clock input and generates clock inputs to DRAMs. DRAM use clock input from AMB which is two times faster than refer-
ence clock for DRAM operation. DRAM data transfer rate is two times faster than DRAM clock input with nature of double data rate
operation and four times faster than external clock source. Channel speed is represented by unit interval - average time interval between
voltage transitions of a signal in the FBD channel. It is six times faster than DRAM data transfer rate. For example, external clock source
gives 6ns clock (166MHz), AMB doubles it and gives 3ns clock (333MHz) to DRAM and FBD channel communicate with unit interval -
250ps (4.0Gbps transfer rate).
Figure 2 shows frequency scale ratio over frequency parameters in FBD memory system.
Figure 2 : FB-DIMM Speed Scaling
DDR667 Ex.
6ns
3ns
CLK_REF
DRAM
DRAM
CLK_DRAM
250ps Packet T/F
12 UIs in one CLK_DRAM
SB (ADDR, CMD, Wdata)
DQs ADDR CLK
CMD
Rx
Tx
Clk_Ref
Tx
Rx
AMB
Host
NB(Rdata)
DRAM
DRAM
Reference CLK
Reference CLK
Clock
UI
312.5ps
250ps
CLK_DRAM
266MHz
CLK_REF
133MHz
166MHz
200MHz
Frequency
3.2Gb/s
DDR2-533
DDR2-667
DDR2-800
333MHz
4.0Gb/s
208.33ps
400MHz
4.8Gb/s
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FBDIMM
DDR2 SDRAM
2.3 FB-DIMM Clocking Scheme
In FB-DIMM platform design, phase adjustment among reference clock inputs to each individual AMB and host is not taken account.
Thus, clock synchronization is made by using both external reference clock and channel data stream in FB-DIMM memory system. Host
and each individual AMB has a each individual IO basis clock recovery circuitry for channel data communication. It runs with inputs from
PLL inside chip and data stream from the other AMB or Host. Because data stream itself involves data communication process, no sig-
naling switching or data communication may loss clock synchronization between transmitter and receiver. Thus, min transition density is
defined for this purpose. In FBD channel, a density of 6 transitions within 512 transfers or unit intervals (UI) on the channel is required for
interpolator training.
Figure 3 : FB-DIMM Clocking
Min. Transition Density
6 Transitions
Using Reference CLK (Not in Phase)
Adjust edge/phase by; Min. Transition Density
DRAM
DRAM
512 Transfers
DQs ADDR CLK
CMD
Rx
Tx
Rx
SB (ADDR, CMD, Wdata)
AMB
Tx
Clk_Ref
Host
NB(Rdata)
DRAM
DRAM
Clock
Reference CLK
Recovery
Clock
2.4 FB-DIMM Protocol
FB-DIMM channel has two unidirectional communication paths - south bound and north bound. South bound and north bound use phys-
ically different signal path. South and north mean direction of signal transaction. Southbound means direction of signals running from the
host controller toward the DIMMs. North is the opposite of south. Due to nature of memory operation, southbound carries information
including command to DRAM, address to DRAM and write data to DRAM, while north bound carries read data from DRAM. In channel
protocol point of view, southbound and northbound have different data frame formats and frame format size is optimized to ratio of read
and write. Data transfer perspective, read data transfer rate of north bound is twice faster than write data transfer. Higher channel utiliza-
tion achieves with asymmetric read and write data transfer rate.
Figure 4 : Southbound / Northbound Frame format
Sout bound
Northbound
Command (with Address)
A CMD
B CMD
C CMD
R_Data(x72bits)
Command (with Address)
or Write Data in
R_Data(x72bits)
Command (with Address)
or Write Data in
Southbound consists of 10 differential signal pairs (lane), physically 20 signaling line. Southbound Format has 10x12 (10 IO (or Lane) x
12 IO switching) frame format, which deliver 10x12 bit information per one DRAM clock. One south bound frame is divided into three
command slot. See figure 5. Command slot A delivers command (with address). Command slot B and C delivers command (with
address) or write data into DRAM.
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FBDIMM
DDR2 SDRAM
Figure 5 : FBDIMM Command Encoding & SB Frame
Southbound Command Frame Format*
Bit
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
aE0 aE7 aE8 F0=0 aC20 aC16 aC12 aC8 aC4 aC0
aE1 aE6 aE9 F1=0 aC21 aC17 aC13 aC9 aC5 aC1
aE2 aE5 aE10 aE13 aC22 aC18 aC14 aC10 aC6 aC2
aE3 aE4 aE11 aE12 aC23 aC19 aC15 aC11 aC7 aC3
CLK_REF
CLK_DRAM
Packet T/F
A CMD
B CMD
C CMD
FE21
FE20
FE19
FE18
FE17
FE16
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
bC20 bC16 bC12 bC8 bC4 bC0
bC21 bC17 bC13 bC9 bC5 bC1
bC22 bC18 bC14 bC10 bC6 bC2
bC23 bC19 bC15 bC11 bC7 bC3
cC20 cC16 cC12 cC8 cC4 cC0
cC21 cC17 cC13 cC9 cC5 cC1
cC22 cC18 cC14 cC10 cC6 cC2
cC23 cC19 cC15 cC11 cC7 cC3
x10 bits
10 FE15
11 FE14
FE0 FE7 FE11
FE1 FE6 FE10
FE2 FE5 FE9 FE13
FE3 FE4 FE8 FE12
12 transfers
Note :
1. aE[0~12] : CRC Checksum of the A Command
2. F[0~1] : Frame Type
3. FE[0~21] : CRC Checksum of 72bit data
4. CRC : Cyclic Redundancy Check
DRAM Cmnds
23
22
21
20
1
0
0
0
0
0
0
19
18
17
16
X
15
X
14
X
13
X
12
11
10
9
8
7
6
5
4
3
2
1
0
Activate
Write
Read
DS2 DS1 DS0
DS2 DS1 DS0
DS2 DS1 DS0
DS2 DS1 DS0
DS2 DS1 DS0
DS2 DS1 DS0
DS2 DS1 DS0
DRAM Addr RS
DRAM Bank & Address
DRAM Bank & Address
DRAM Bank & Address
1
1
0
0
0
0
1
0
1
1
1
1
RS
RS
RS
RS
RS
RS
Precharge All
1
1
1
1
1
1
0
0
1
0
1
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Precharge Single
Auto (CBR) Refresh
Enter Self Refresh
DRAM Bank
X
X
X
X
X
X
X
X
Exit Self Refresh/
DS2 DS1 DS0
0
0
1
RS
X
X
X
X
0
1
1
X
X
X
X
X
X
X
X
X
X
Exit Power Down
Enter Power Down
reserved
DS2 DS1 DS0
0
0
0
0
1
1
RS
X
X
X
X
X
X
X
X
X
0
0
1
0
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Note : The values in “ X” fields in non-reserved commands above may be driven onto the DRAM device pins.
2.5 Southbound Command Delivery
A DRAM command located in the "A" command may be delivered to the DRAM devices as soon as the 14-bit (10-bits in fail-over) CRC
is checked. This minimizes DRAM access latency by allowing the command to be delivered after the first 4 transfers of the frame have
been received. The "A" command is transferred immediately to the DRAM pins with minimum delay whereas the "B" and "C" command
are delivered one DRAM clock later. To minimize memory access latency the read related Activate, Read (if the page is open) and
explicit Precharge commands to a rank of DRAM devices should be placed in the "A" command, if possible. Figure 6 illustrates the deliv-
ery of the three potential commands in a frame to three separate DRAM channels.
Command "A" is delivered in this case to the DRAM devices on DIMM 3 as soon as the command can traverse the AMB buffer. The "B"
and "C" commands are delayed and presented to two other DRAM channels on the following clock. See below figure7~10 for Basic
Read & Write Operations
Northbound consists of 14 differential signal pairs (lane), physically 28 signaling line. Southbound Format has 14x12 (14 IO (or Lane) x
12 IO switching) frame format, which deliver 14x12 bit information per one DRAM clock. One north bound frame is divided into two. Both
frame deliver read data from DRAM
Figure 6 : FBDIMM Command Delivery Rules
1
2
3
4
5
“A”
“B”
“C”
FBD southbound
cmd/data
1. CMD A transferred immediately
2. CMD A, B, C cannot target the same DIMM
3. Host is responsible for scheduling CMD
DIMM 1 cmd
DIMM 2 cmd
“C”
“B”
DIMM 3 cmd
DIMM 4 cmd
“A”
FBD northbound
cmd/data
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FBDIMM
DDR2 SDRAM
2.6 Basic Timing Diagram
Figure 7 : Basic DRAM Read Data Transfers on FBD
1
2
3
4
5
6
7
8
9
10
11
12
13
ACT1
NOP
NOP
RD1
NOP
NOP
FBD southbound
cmd/data
DIMM 1 cmd
DIMM 1 data
DIMM 2 cmd
DIMM 2 data
ACT1
RD1
FBD northbound
data
Figure 8 : Back to Back DRAM Read Data Transfers
1
2
3
4
5
6
7
8
9
10
11
12
13
ACT1
NOP
NOP
ACT2 RD1
NOP NOP
NOP NOP
RD2
NOP
NOP
FBD southbound
cmd/data
DIMM 1 cmd
DIMM 1 data
DIMM 2 cmd
DIMM 2 data
ACT1
RD1
ACT2
RD2
FBD northbound
data
No Bubble
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FBDIMM
DDR2 SDRAM
Figure 9 : Basic DRAM Write Data Transfers on FBD
1
2
3
4
5
6
7
8
9
10
11
12
13
ACT1
NOP
NOP
NOP WR1 NOP NOP SYNC
Wdata Wdata Wdata Wdata 1010
Wdata Wdata Wdata Wdata 0101
FBD southbound
cmd/data
DIMM 1 cmd
DIMM 1 data
DIMM 2 cmd
DIMM 2 data
ACT1
WR1
Fixed fall through time
FBD northbound
data
Status
Figure 10 : Simultaneous RD / WR Data Transfers
1
2
3
4
5
6
7
8
9
10
11
12
13
ACT1 ACT2 ACT3 RD1 WR2
RD3
SYNC
1010
0101
FBD southbound
cmd/data
Wdata Wdata Wdata Wdata NOP NOP
Wdata Wdata Wdata Wdata NOP NOP
DIMM 1 cmd
DIMM 1 data
DIMM 2 cmd
DIMM 2 data
ACT1
ACT3 RD1
RD3
ACT2
WR2
FBD northbound
data
Status
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FBDIMM
DDR2 SDRAM
2.7 Advanced Memory Buffer Block Diagram
Figure 11 : Advanced Memory Buffer Block Diagram
Advance Memory Buffer
Block Dlagram
10x2
10x2
Southbound
Data Out
NORTH
Southbound
Data In
Data Merge
Re-Time
Re-synch
1x2
PLL
demux
PISO
mux
Ref Clock
10*2
10*2
Link Init SM
and Control
and CSRs
Reset#
Reset
Control
lnit
patterns
4
DRAM Clock
IBIST - RX
LAI Logic
IBIST - TX
4
DRAM Clock #
Command
Decoder &
CRC Check
failover
29
DRAM Address /
Cmd Out
Command Copy 1
DRAM Cmd
29
Thermal
Sensor
DRAM Address /
Command Copy 2
DDR State
Controller
and CSRs
Data Out
Data In
Core Control
and CSRs
36
deep
Write
Data
FIFO
72 + 18x2
DRAM
External MEMBIST
DDR calibration &
DDR IOBIST/DFX
Data / strobe
LAI
Controller
Data CRC Gen
& Read FIFO
Sync & ldie
NB LAI Buffer
Pattern
Generator
IBIST -TX
IBIST - RX
SMbus
SMbus
Controller
mux
Link lnit SM
and Control
and CSRs
failover
14*6*2
14*12
PISO
demux
Re-synch
Re-Time
Data Merge
Northbound
Data Out
Northbound
Data In
14x2
14x2
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FBDIMM
DDR2 SDRAM
2.8 Interfaces
Figure12 illustrates the Advanced Memory Buffer and all of its interfaces. They consist of two FBD links, one DDR2 channel and an SM-
Bus interface. Each FBD link connects the Advanced Memory Buffer to a host memory controller or an adjacent FBD. The DDR2 channel
supports direct connection to the DDR2 SDRAMs on a Fully Buffered DIMM
Figure 12 : Advanced Memory Buffer Interface Block Diagram
MEMORY INTERFACE
NB FBD
Out Link
NB FBD
In Link
AMB
SB FBD
Out Link
SB FBD
In Link
SMB
The FBDIMM channel uses a daisy-chain topology to provide expansion from a single DIMM per channel to up to 8 DIMMs per channel.
The host sends data on the southbound link to the first DIMM where it is received and redriven to the second DIMM. On the southbound
data path each DIMM receives the data and again redrives the data to the next DIMM until the last DIMM receives the data. The last DIMM
in the chain initiates the transmission of data in the direction of the host (a.k.a. northbound). On the northbound data path each DIMM
receives the data and re-drives the data to the next DIMM until the host is reached.
3.0 FBD HIGH-SPEED DIFFERENTIAL POINT TO POINT LINK (at 1.5 V) INTERFACE
The Advanced Memory Buffer supports one FBD Channel consisting of two bidirectional link interfaces using high-speed differential point-
to-point electrical signaling.
The southbound input link is 10 lanes wide and carries commands and write data from the host memory controller or the adjacent DIMM
in the host direction. The southbound output link forwards this same data to the next FBD.
The northbound input link is 14 lanes wide and carries read return data or status information from the next FBDIMM in the chain back
towards the host. The northbound output link forwards this information back towards the host and multiplexes in any read return data or
status information that is generated internally.
3.1 DDR2 Channel
The DDR2 channel on the Advanced Memory Buffer supports direct connection to DDR2 SDRAMs. The DDR2 channel supports two
ranks of eight banks with 16 row/column request, 64 data signals, and eight check-bit signals. There are two copies of address and com-
mand signals to support DIMM routing and electrical requirements. Four-transfer bursts are driven on the data and check-bit lines at 800
MHz.
Propagation delays between read data/check-bit strobe lanes on a given channel can differ. Each strobe can be calibrated by hardware
state machines using write/read trial and error (or equivalent implementation). Hardware aligns the read data and check-bits to a single
core clock.
The Advanced Memory Buffer provides four copies of the command clock phase references (CLK[3:0]) and write data/check-bit .
3.2 SMBus Slave Interface
The Advanced Memory Buffer supports an SMBus interface to allow system access to configuration registers independent of the FBD
link. The Advanced Memory Buffer will never be a master on the SMBus, only a slave. Serial SMBus data transfer is supported at 100
kHz. SMBus access to the Advanced Memory Buffer may be a requirement to boot a system. This provides a mechanism to set link
strength, frequency and other parameters needed to insure robust operation given platform specific configurations. It is also required for
diagnostic support when the link is down. The SMBus address straps located on the DIMM connector are used by the Advanced Memory
Buffer to get its unique ID.
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FBDIMM
DDR2 SDRAM
3.3 FBD Channel Latency
FBD channel latency is measured from the time a read request is driven on the FBD channel pins to the time when the first 16 bytes (2nd
chunk) of read completion data is sampled by the memory controller.
When not using the Variable Read Latency capability, the latency for a specific FBDIMM on an FBD channel is always equal to the latency
for any other FBDIMM on that channel. However, the latency for each FBDIMM in a specific configuration with some number of FBDIMMs
installed may not be equal to the latency for each FBDIMM in a configuration with some different number of FBDIMMs installed.
As more DIMMs are added to the FBD channel, additional latency is required to read from each DIMM on the channel. Because the FBD
channel is based on the point-to-point interconnection of buffer components between DIMMs, memory requests are required to travel
through N-1 buffers before reaching the Nth buffer. The result is that a four DIMM channel configuration will have greater idle read latency
compared to a one DIMM channel configuration.
The Variable Read Latency capability can be used to reduce latency for DIMMs closer to the host.
The idle latencies listed in this section are representative of what might be achieved in typical AMB designs. Actual implementations with
latencies less than the values listed will have higher application performance and vice versa.
3.4 Peak Theoretical Throughput
An FBD channel transfers read completion data on the FBD Northbound data connection. 144 bits of data are transferred for every FBD
Northbound data frame. This matches the 18-byte data transfer of an ECC DDR DRAM in a single DRAM command clock. A DRAM burst
of 8 from a single channel or a DRAM burst of four from two lock-stepped channels provides a total of 72 bytes of data (64 bytes plus 8
bytes ECC).
The FBD frame rate matches the DRAM command clock because of the fixed 6:1 ratio of the FBD channel clock to the DRAM command
clock. Therefore, the Northbound data connection will exhibit the same peak theoretical throughput as a single DRAM channel. For exam-
ple, when using DDR2 533 DRAMs, the peak theoretical bandwidth of the Northbound data connection is 4.267 GB/sec.
Write data is transferred on the FBD Southbound command and data connection, via Command+Wdata frames. 72 bits of data are trans-
ferred for every FBD Command+Wdata frame. Two Command+Wdata frames match the 18-byte data transfer of an ECC DDR DRAM in
a single DRAM command clock. A DRAM burst of 8 transfers from a single channel, or a burst of 4 from two lock-step channels provides
a total of 72 bytes of data (64 bytes plus 8 bytes ECC).
When the FBD frame rate matches the DRAM command clock, the Southbound command and data connection will exhibit one half the
peak theoretical throughput of a single DRAM channel. For example, when using DDR2 533 DRAMs, the peak theoretical bandwidth of
the Southbound command and data connection is 2.133 GB/sec.
The total peak theoretical throughput for a single FBD channel is defined as the sum of the peak theoretical throughput of the Northbound
data connection and the Southbound command and data connection. When the FBD frame rate matches the DRAM command clock, this
is equal to 1.5 times the peak theoretical throughput of a single DRAM channel. For example, when using DDR2 533 DRAMs, the peak
theoretical throughput of a DDR2 533 channel would be 4.267 GB/sec, while the peak theoretical throughput of an FBD-533 channel would
be 6.4 GB/sec
3.5 Hot-add
The FBDIMM channel does not provide a mechanism to automatically detect and report the addition of a new FBDIMM south of the cur-
rently active last FBDIMM. It is assumed the system will be notified through some means of the addition of one or more new FBDIMMs so
that specific commands can be sent to the host controller to initialize the newly added FBDIMM(s) and perform a hot-add reset to bring
them into the channel timing domain. It should be noted that the power to the FBDIMM socket must be removed before a hot-add FBDIMM
is inserted or removed. Applying or removing the power to a FBDIMM socket is a system platform function.
3.6 Hot remove
In order to accomplish removal of FBDIMMs, the host must perform a fast reset sequence targeted at the last FBDIMM that will be retained
on the channel. The fast reset re-establishes the appropriate last FBDIMM so that the southbound transmission outputs of the last active
FBDIMM and the southbound and northbound outputs of the FBDIMMs beyond the last active FBDIMM are disabled. Once the appropriate
outputs are disabled, the system can coordinate the procedure to remove power in preparation for physical removal of the FBDIMM if need-
ed. Note that the power to the FBDIMM socket must be removed before a hot-add FBDIMM is inserted or removed. Applying or removing
the power to a FBDIMM socket is a system platform function.
3.7 Hot replace
Hot replace of FBDIMM is accomplished through combining the hot-remove and hotadd processes
Rev. 1.52 April 2008
13 of 28
FBDIMM
DDR2 SDRAM
4.0 PIN CONFIGUREATION
Table 4 : DDR2 240 Pin FBDIMM Configurations (Front side/Back side)
Pin
1
Front
VDD
VDD
VDD
VSS
VDD
VDD
VDD
VSS
VCC
VCC
VSS
VCC
VCC
VSS
VTT
Pin
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
Back
VDD
VDD
VDD
VSS
VDD
VDD
VDD
VSS
VCC
VCC
VSS
VCC
VCC
VSS
VTT
Pin
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
Front
PN3
Pin
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
Back
SN3
Pin
61
62
63
64
65
66
67
68
Front
PN9
Pin
181
182
183
184
185
186
187
188
Back
SN9
Pin
91
Front
PS9
Pin
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
Back
SS9
VSS
VSS
VSS
VSS
2
PN3
SN3
92
VSS
VSS
3
PN10
PN10
VSS
SN10
SN10
VSS
93
PS5
PS5
VSS
SS5
SS5
VSS
4
PN4
PN4
VSS
SN4
SN4
VSS
94
5
95
6
PN11
PN11
VSS
SN11
SN11
VSS
96
PS6
PS6
VSS
SS6
SS6
VSS
7
PN5
PN5
VSS
SN5
SN5
VSS
97
8
98
9
KEY
99
PS7
PS7
VSS
SS7
SS7
VSS
VSS
VSS
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
PN13
PN13
VSS
SN13
SN13
VSS
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
189
190
191
192
193
194
195
196
197
198
199
200
201
202
203
204
205
206
207
208
209
210
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
PS0
PS0
VSS
SS0
SS0
VSS
PS8
PS8
VSS
SS8
SS8
VSS
VSS
VSS
RFU*
RFU*
VSS
RFU*
RFU*
VSS
PS1
PS1
VSS
SS1
SS1
VSS
RFU**
RFU**
VSS
RFU**
RFU**
VSS
VID1
RESET
VSS
VID0
DNU/M_Test
VSS
VSS
VSS
PS2
PS2
VSS
SS2
SS2
VSS
VDD
VDD
VSS
PN12
PN12
VSS
SN12
SN12
VSS
SCK
SCK
VSS
RFU**
RFU**
VSS
RFU**
RFU**
VSS
PS3
PS3
VSS
SS3
SS3
VSS
VDD
VDD
VDD
VSS
VDD
PN6
PN6
VSS
SN6
SN6
VSS
VDD
PN0
PN0
VSS
SN0
SN0
VSS
VDD
PS4
PS4
VSS
VSS
SS4
SS4
VSS
VSS
VSS
PN7
PN7
VSS
SN7
SN7
VSS
VDD
VDD
VTT
VDD
PN1
PN1
VSS
SN1
SN1
VSS
VDD
VTT
PN8
PN8
VSS
SN8
SN8
VSS
RFU*
RFU*
VSS
RFU*
RFU*
VSS
VDDSPD
PN2
PN2
VSS
SN2
SN2
VSS
SA2
SDA
SCL
SA0
SA1
VSS
VSS
PN9
SN9
PS9
SS9
RFU = Reserved Future Use.
* These pin positions are reserved for forwarded clocks to be used in future module implementations
** These pin positions are reserved for future architecture flexibility
1. The following signals are CRC bits and thus appear out of the normal sequence : PN12/PN12, SN12/SN12, PN13/PN13, SN13/SN12, PS9/PS9, SS9/SS9.
Rev. 1.52 April 2008
14 of 28
FBDIMM
DDR2 SDRAM
Table 5 : Pin Description
Pin Name
SCK
Type
Input
Pin Description
System Clock Input, positive line
Pin Numbers
228
229
SCK
Input
System Clock Input, negative line
PN[13:0]
PN[13:0]
PS[9:0]
PS[9:0]
Output
Output
Input
Primary northbound Data, positive lines
Primary northbound Data, negative lines
Primary Southbound Data, positive lines
Primary Southbound Data, negative lines
22, 25, 28, 31, 34, 37, 40, 48, 51, 54, 57, 60, 63, 66
23, 26, 29, 32, 35, 38, 41, 49, 52, 55, 58, 61, 64, 67
70, 73, 76, 79, 82, 90, 93, 96, 99, 102
Input
71, 74, 77, 80, 83, 91, 94, 97, 100, 103
142, 145, 148, 151, 154, 157, 160, 168, 171, 174, 177,
180, 183, 186
SN[13:0]
SN[13:0]
Output
Output
Secondary Northbound Data, positive lines
Secondary Northbound Data, negative lines
143, 146, 149, 152, 155, 158, 161, 16, 172, 175, 178,
181, 184, 187
SS[9:0]
SS[9:0]
SCL
Input
Input
Input
Input
Secondary Southbound Data, positive lines
Secondary Southbound Data, negative lines
Serial Presence Detect (SPD) Clock Input
SPD Data Input / Output
190, 193, 196, 199, 202, 210, 213, 216, 219, 222
191, 194, 197, 200, 203, 211, 214, 217, 220, 223
120
119
SDA
SPD Address Inputs, also used to slelect the DIMM number in
the AMB
SA[2:0]
Input
118, 239, 240
Voltage ID : These pins must be unconnected for DDR2 -
based Fully Buffered DIMMs
V
ID[1:0]
NC
16, 136
17
V
V
ID[0] is VDD value : OPEN = 1.8 V, GND = 1.5 V ; VID[1] is
CC value : OPEN = 1.5V, GND = 1.2V
RESET
RFU
Input
RFU
AMB reset signal
19, 20, 44, 45, 86, 87, 105, 106, 139, 140, 164, 165,
206, 207, 225, 226
Reserved for Future Use
AMB Core Power and AMB Channel Interface Power (1.5
Volt)
VCC
VDD
PWR
PWR
9, 10, 12, 13, 129, 130, 132, 133
1, 2, 3, 5, 6, 7, 108, 109, 111, 112, 113, 115, 116, 121,
122, 123, 125, 126, 127, 231, 232, 233, 235, 236
DRAM Power and AMB DRAM I/O Power (1.8Volt)
VTT
PWR
PWR
DRAM Address/Command/Clcok Termination Power(VDD/2) 15, 117, 135, 237
VDDSPD
SPD Power
238
4, 8, 11, 14, 18, 21, 24, 27, 30, 33, 36, 39, 42, 43, 46,
47, 50, 53, 56, 59, 62, 65, 68, 69, 72, 75, 78, 81, 84, 85,
88, 89, 92, 95, 98, 101, 104, 107, 110, 114, 124, 128,
131, 134, 138, 141, 144, 147, 150, 153, 156, 159, 162,
163, 166, 167, 170, 173, 176, 179, 182, 185, 188, 189,
192, 195, 198, 201, 204, 205, 208, 209, 212, 215, 218,
221, 224, 227, 230, 234
VSS
GND
DNU
Ground
The DNU/M_Test pin provides an external connection R/Cs A-
D for testing the margin of Vref which is produced by a voltage
divider on the module. It is not intended to be used in normal
DNU/M_Test
system operation and must not be connected (DNU) in a sys- 137
tem. This test pin may have other features on future card de-
signs and if it does, will be included in this specification at that
time.
Rev. 1.52 April 2008
15 of 28
FBDIMM
DDR2 SDRAM
5.0 FBDIMM FUNCTIONAL BLOCK DIAGRAM
5.1 2GB, 256Mx72 Module - M395T5663CZ4
(populated as 2 rank of x8 DDR2 SDRAMs)
S1
S0
DQS0
DQS0
DQS9
DQS4
DQS4
DQS13
DM/ NU/ CS DQS DQS
RDQS RDQS
DM/ NU/ CS DQS DQS
RDQS RDQS
DM/ NU/ CS DQS DQS
DM/ NU/ CS DQS DQS
RDQS RDQS
RDQS RDQS
I/O 0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
I/O 0
I/O 0
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D0
D9
D4
D13
DQS1
DQS1
DQS5
DQS5
DQS10
DQS14
DM/ NU/ CS DQS DQS
RDQS RDQS
DM/ NU/ CS DQS DQS
RDQS RDQS
DM/ NU/ CS DQS DQS
RDQS RDQS
DM/ NU/ CS DQS DQS
RDQS RDQS
DQ8
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
I/O 0
I/O 0
I/O 0
I/O 0
DQ9
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D1
D10
D5
D14
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2
DQS2
DQS6
DQS6
DQS11
DQS15
DM/ NU/ CS DQS DQS
RDQS RDQS
DM/ NU/ CS DQS DQS
RDQS RDQS
DM/ NU/ CS DQS DQS
RDQS RDQS
DM/ NU/ CS DQS DQS
RDQS RDQS
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
I/O 0
I/O 0
I/O 0
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D2
D11
D6
D15
DQS7
DQS7
DQS3
DQS3
DQS16
DQS12
DM/ NU/ CS DQS DQS
RDQS RDQS
DM/ NU/ CS DQS DQS
RDQS RDQS
DM/ NU/ CS DQS DQS
RDQS RDQS
DM/ NU/ CS DQS DQS
RDQS RDQS
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
I/O 0
I/O 0
I/O 0
I/O 0
I/O 1
I/O 1
I/O 1
I/O 1
D7
D16
D3
D12
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS8
DQS8
PN0-PN13
PN0-PN13
PS0-PS9
PS0-PS9
SN0-SN13
SN0-SN13
SS0-SS9
SS0-SS9
DQS17
DM/ NU/ CS DQS DQS
RDQS RDQS
DM/ NU/ CS DQS DQS
RDQS RDQS
S0->CS(D0-D8)
DQ0-DQ63
CB0-CB7
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
I/O 0
I/O 0
CKE0->CKE(D0-D8)
S1->CS(D9-D17)
A
M
B
I/O 1
I/O 1
DQS0-DQS17
DQS0-DQS8
D8
D17
CKE1->CKE(D9-D17)
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
ODT->ODT(all SDRAMs)
BA0-BA2(all SDRAMs)
A0-A15(all SDRAMs)
RAS(all SDRAMs)
SCL
SDA
SA1-SA2
SA0
CAS(all SDRAMs)
RESET
WE(all SDRAMs)
CK/CK(all SDRAMs)
SCK/SCK
V
All address/command/control/clock
TT
Serial PD
V
Terminators
TT
SCL
SDA
V
AMB
WP A0 A1 A2
SA0 SA1 SA2
CC
V
SPD, AMB
D0-D17, AMB
D0-D17
DDSPD
V
DD
V
Note :
1.DQ-to I/O wiring may be changed within a byte.
2.There are two physical copies of each address/command/control/clock
REF
V
D0-D17,SPD,AMB
SS
Rev. 1.52 April 2008
16 of 28
FBDIMM
DDR2 SDRAM
5.2 4GB, 512Mx72 Module - M395T5160CZ4
(populated as 2 rank of x4 DDR2 SDRAMs)
VSS
S1
S0
DQS0
DQS0
DQS9
DQS9
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DQ0
DQ4
I/O 0
I/O 0
I/O 0
I/O 0
DQ1
DQ2
DQ3
DQ5
DQ6
DQ7
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D0
D18
D9
D27
DQS1
DQS1
DQS10
DQS10
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DQ8
DQ12
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
DQ9
DQ13
DQ14
DQ15
D1
D19
D10
D28
DQ10
DQ11
DQS2
DQS11
DQS2
DQS11
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DQ16
DQ20
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
DQ17
DQ18
DQ19
DQ21
DQ22
DQ23
D2
D20
D11
D29
DQS3
DQS12
DQS3
DQS12
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DQ24
DQ28
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
DQ25
DQ26
DQ27
DQ29
DQ30
DQ31
D3
D21
D12
D30
DQS4
DQS13
DQS4
DQS13
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DQ32
DQ36
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
DQ33
DQ34
DQ35
DQ37
DQ38
DQ39
D4
D22
D13
D31
DQS5
DQS14
DQS5
DQS14
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DQ40
DQ44
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
DQ41
DQ42
DQ43
DQ45
DQ46
DQ47
D5
D23
D14
D32
DQS6
DQS15
DQS6
DQS15
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DQ48
DQ52
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
DQ49
DQ50
DQ51
DQ53
DQ54
DQ55
D6
D24
D15
D33
DQS7
DQS16
DQS7
DQS16
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DQ56
DQ60
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
DQ57
DQ58
DQ59
DQ61
DQ62
DQ63
D7
D25
D16
D34
DQS8
DQS17
DQS8
DQS17
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
DM
CS DQS DQS
CB0
CB4
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
CB1
CB2
CB3
CB5
CB6
CB7
D8
D26
D17
D35
SN0-SN13
SN0-SN13
SS0-SS9
SS0-SS9
PN0-PN13
V
All address/command/control/clock
TT
PN0-PN13
PS0-PS9
PS0-PS9
Serial PD
S0->CS(D0-D17)
DQ0-DQ63
CB0-CB7
CKE0->CKE(D0-D17)
S1->CS(D18-D35)
A
DQS0-DQS17
DQS0-DQS8
SCL
SDA
M
B
CKE1->CKE(D18-D35)
WP A0 A1 A2
ODT->ODT(all SDRAMs)
BA0-BA2(all SDRAMs)
A0-A15(all SDRAMs)
RAS(all SDRAMs)
SCL
V
Terminators
AMB
TT
SDA
SA1-SA2
SA0
V
SA0 SA1 SA2
CC
CAS(all SDRAMs)
RESET
WE(all SDRAMs)
CK/CK(all SDRAMs)
V
SPD, AMB
D0-D35, AMB
D0-D35
SCK/SCK
DDSPD
V
DD
V
REF
V
D0-D35,SPD,AMB
SS
Note :
1.DQ-to I/O wiring may be changed within a byte.
2.There are two physical copies of each address/command/control/clock.
3. There are four physical copies of each clock.
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FBDIMM
DDR2 SDRAM
6.0 ELECTRICAL CHARACTERISTICS
Table 6 : AbsoIute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Voltage on VCC pin relative to VSS
Voltage VDD pin relative to VSS
Voltage on VTT pin relative to VSS
Storage temperature
Symbol
VIN, VOUT
VCC
MIN
-0.3
-0.3
-0.5
-0.5
-55
0
MAX
1.75
1.75
2.3
Units
V
Note
1
1
1
1
1
V
VDD
V
VTT
2.3
V
TSTG
100
85
°C
DDR2 SDRAM device operating temperature(Ambient)
TCASE
°C
°C
1,2
1,2
85
95
AMB device operating temperature (Ambient)
TCASE
0
110
Note : 1. Stresses greater than those Iisted may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may adversely affect reliability.
2. DDR2 SDRAMs of FBDIMM should require this specification.
Parameter
Symbol
DRAM
Units
µs
0 °C ≤ TCASE ≤ 85°C
7.8
Average periodic refresh interval
tREFI
85 °C < TCASE ≤ 95°C
3.9
µs
Table 7 : Input DC Operating Conditions
Parameter
AMB supply voltage
Symbol
VCC
VDD
MIN
1.455
1.7
Nom
1.50
MAX
1.575
1.9
Units
V
V
Notes
DDR2 SDRAM supply voltage
Termination voltage
1.8
VTT
0.48 x VDD
3.0
0.50 x VDD
3.3
0.52 x VDD
3.6
V
EEPROM supply voltage
VDDSPD
VIH(DC)
VIL(DC)
VIH(DC)
VIL(DC)
IL
V
SPD Input HIGH (Iogic 1) voltage
SPD Input LOW (logic 0) voltage
RESET Input HIGH (logic 1) voltage
RESET Input LOW (logic 0) voltage
Leakage Current (RESET)
Leakage Current (link)
2.1
VDDSPD
0.8
V
1
1
2
1
2
3
V
V
0.5
90
5
V
-90
-5
uA
uA
IL
Note : 1. Applies for SMB and SPD bus signals.
2. Applies for AMB CMOS signal RESET.
3. For all other AMB related DC parameters, please refer to the high-speed differential link interface specification.
Table 8 : Timing Parameters
Parameter
EI Assertion Pass-Thru Timing
EI Deassertion Pass-Thru Timing
EI Assertion Duration
Symbol
tEI Propagatet
tEID
MIN
Typ.
Max.
4
Units
clks
clks
clks
ns
Notes
-
2
Bitlock
tEI
100
1,2
3
FBD Cmd to DDR Clk out that latches Cmd
FBD Cmd to DDR Write
8.1
TBD
5.0
ns
DDR Read to FBD (last DIMM)
Resample Pass-Thru time
ResynchPass-Thru time
ns
4
1.075
2.075
ns
ns
Bit Lock Interval
tBitLock
119
154
frames
frames
1
1
Frame Lock Interval
tFrameLock
Note : 1. Defined in FB-DIMM Architecture and Protocol Spec
2. Clocks defined as core clocks = 2x SCK input
3. @DDR2-667 - measured from beginning of frame at southbound input to DDR clock output that latches the first command of a frame to the DRAMs
4. @ DDR2-667 - measured from latest DQS input AMB TO start of matching data frame at northbound FB-DIMM outputs.
Rev. 1.52 April 2008
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FBDIMM
DDR2 SDRAM
Table 9 : Power specification parameter and test condition
Power
Units
Symbol
Conditions
Supply
Icc_Idle_0
Idle Current, single or last DIMM
L0 state, idle (0 BW)
Primary channel enabled, Secondary Channel Disabled
CKE high. Command and address lines stable.
DRAM clock active.
@1.5V
mA
Idd_Idle_0
@1.8V
mA
Idd_Idle_0 Total Power
W
Icc_Idle_1
Idd_Idle_1
Idle Current, first DIMM
@1.5V
@1.8V
mA
L0 state, idle (0 BW)
Primary and Secondary channels enabled
CKE high. Command and address lines stable.
DRAM clock active.
mA
Idd_Idle_1 Total Power
W
Icc_Active_1
Idd_Active_1
Active Power
@1.5V
@1.8V
mA
L0 state.
50% DRAM BW, 67% read, 33% write.
Primary and Secondary channels enabled.
DRAM clock active, CKE high.
mA
Idd_Active_1 Total Power
W
Icc_Active_2
Idd_Active_2
Active Power, data pass through
L0 state.
50% DRAM BW to downstream DIMM, 67% read, 33% write.
Primary and Secondary channels enabled
CKE high. Command and address lines stable.
DRAM clock active.
@1.5V
@1.8V
mA
mA
Idd_Active_2 Total Power
W
Idd_Training
(for AMB spec, Not in
SPD)
Training
@1.5V
@1.8V
mA
Primary and Secondary channels enabled.
100% toggle on all channel lanes
DRAMs idle. 0 BW.
Idd_Training
(for AMB spec, Not in
SPD)
CKE high, Command and address lines stable.
DRAM clock active.
mA
W
Idd_Training Total Power
Table 10 : Power specification (Vdd Max = 1.900V, Vcc Max = 1.575V)
2GB(M395T5663CZ4)
4GB(M395T5160CZ4)
E66/E61
(PC2-5300)
D56/D51
E66/E61
(PC2-5300)
2600
D56/D51
(PC2-4200)
D55
E65
F76
Symbol
Notes
Unit
(PC2-4200)
2200
(PC2-6400)
Icc_Idle_0
2200
2520
8.253
3000
2520
9.513
3400
4670
14.228
3200
2520
9.828
3500
2520
10.301
2200
2520
8.253
3000
2520
9.513
3400
4670
14.228
3200
2520
9.828
3500
2520
10.301
2600
2520
2600
2520
@1.5V
@1.8V
mA
mA
W
Idd_Idle_0
P_idle_0
1510
1510
6.334
3000
6.964
3400
8.883
3400
8.883
3400
Icc_Idle_1
Idd_Idle_1
P_idle_1
@1.5V
@1.8V
mA
mA
W
1510
1510
2520
2520
7.594
3400
8.224
3900
10.143
3900
10.143
3900
Icc_active_1
Idd_active_1
P_active_1
Icc_active_2
Idd_active_2
P_active_2
Icc_training
Idd_training
P_training
@1.5V
@1.8V
mA
mA
W
2935
3100
4940
4940
TBD
10.932
3200
12.033
3700
15.529
3700
15.529
3700
@1.5V
@1.8V
mA
mA
W
1510
1510
2520
2520
7.909
3500
8.697
4000
10.616
4000
10.616
4000
@1.5V
@1.8V
mA
mA
W
1510
1510
2520
2520
8.382
9.169
11.088
11.088
Note :
1. FBDIMM Power was calculated on the basis of DRAM and AMB Values in datasheet.
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FBDIMM
DDR2 SDRAM
Table 11 : V Currents
TT
Description
Idle current, DDR2 SDRAM device power down
Active power, 50% DDR2 SDRAM BW
Symbol
ITT1
Typ
500
500
MAX
700
Units
mA
ITT2
700
mA
Table 12 : Reference Clock Input Specifications
Values
Parameter
Symbol
Units
Note
MIN
126.67
158.33
190.00
175
MAX
133.40
166.75
200.10
700
Reference clock frequency @3.2 Gb/s (nominal 133.33 MHz)
Reference clock frequency @4.0 Gb/s (nominal 166.67 MHz)
Reference clock frequency @4.8 Gb/s (nominal 200 MHz)
Rise time, fall time
fRefclk-3.2
fRefclk-4.0
fRefclk-4.8
TSCK-RISE, TSCK-FALL
VSCK-HIGH
MHz
MHz
MHz
ps
1.2
1.2
1.2
3
Voltage high
660
850
mV
Voltage low
VSCK-LOW
-150
250
mV
Absolute crossing point
VCROSS-ABS
VCROSS-REL
TSCK-RISE-FALL-MATCH
TSCK-DUTYCYCLE
II-CK
550
mV
4
Relative crossing
calculated
-
calculated
4,5
Percent mismatch between rise and fall times
Duty cycle of reference clock
Clock leakage current
10
60
10
2
%
%
40
-10
uA
6,7
7
Clock input capacitance
CI-CK
0.5
pF
Clock input capacitance delta
Transport delay
CI_CK(D)
-0.25
0.25
5
pF
8
T1
ns
9, 10
11
Phase jitter sample size
NSAMPLE
TREF-JITTER
1016
Periods
ps
Reference clock jitter, filtered
40
12,13
Note :
1.133MHz for PC2-4200, 166MHz for PC2-5300 and 200MHz for PC2-6400.
2. Measured with SSC disabled.
3. Measured differentially through the range of 0.175V to 0.525V.
4. The crossing point must meet the absolute and relative crossing point specification simultaneously.
5. VCROSS_REL_(MIN) and VCROSS_REL(MAX) are derived using the following calculation : Min = 0.5(Vhavg-0.710)+0.250;and Max=0.5(Vhavg-0.710)+0.550,
where Vhavg is the average of VSCK-HIGHM.
6. Measured with a single-ended input voltage of 1V.
7. Applies to reference clocks SCK and SCK.
8. Difference between SCK and SCK input.
9. T1 = [Tdatapath-Tclockpath](excluding PLL loop delays). This parameter is not a direct clock output parameter but in indirectly determines the clock
output parameter TREF-JITTER.
10. The net transport delay is the difference in time of flight between associated data and clock paths. The data path is defined from the reference clock
source, through the TX, to data arrival at the data dampling point in the RX. The clock path is defined from the reference clock source to clock arrival
at the same sampling point. The path delays are caused by copper trace routes. on-chip routing, on-chip buffering, etc. They include the time-of flight
of interpolators or other clock adjustment mechanisms. They do not include the phase delays caused by finite PLL loop bandwidth because these de-
lays are modeled by the PLL transfer functions.
11. Direct measurement of phase jitter records over 1016 periods is impractical. It is expected that the jitter will be measured over a smaller, yet statistically
significant, sample size and the total jitter at 1016 samples extrapolated from an estimate of the sigma of the random jitter components.
12. Measured with SSC enabled on reference clock generator.
13. As measured after the phase jitter filter. This number is separate from the receiver jitter budget that is defined by the TRXTotal - MIN parameters.
Rev. 1.52 April 2008
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FBDIMM
DDR2 SDRAM
Table 13 : Differential Transmitter Output Specifications
Values
Parameter
Symbol
Units
Comments
MIN
MAX
Differential peak-to-peak output voltage for large
voltage swing
VTX-DIFFp-p_L
VTX-DIFFPp-p_R
VTX-DIFFp-p_S
VTX-CM_L
900
1,300
mV
mV
mV
mV
mV
dB
EQ1, Note1
EQ1, Note1
EQ1, Note1
EQ2, Note1
EQ2, Note1,2
1,3,4
Differential peak-to -peak output voltage for requ-
lar voltage swing
800
520
Differential peak-to-peak output voltage for small
votage swing
DC common code output voltage for large voltage
swing
375
280
-4.0
-7.0
90
DC common code output voltage for small volt-
age swing
VTX-CM_S
135
-3.0
-5.0
De-emphasized differential output voltage ratio
for -3.5 dB de-emphasis
VTX-DE-3.5-Ratio
VTX-DE-6.0-Ratio
VTX-CM-ACp-p-L
VTX-CM-ACp-p-R
VTX-CM-ACp-p-S
VTX-IDLE-SE
De-emphasized differential output voltage ratio
for -6.0 dB de-emphasis
dB
1,2,3
AC peak-to-peak common mode output voltage
for large swing
mV
mV
mV
mV
mV
mV
EQ7, Note1,5
EQ7, Note1,5
EQ7, Note1,5
6
AC peak-to-peak common mode output voltage
for regular swing
80
AC peak-to-peak common mode output voltage
for small swing
70
Maximum single-ended voltage in EI condition
DC+AC
50
Maximum single-ended voltage in EI condition
DC+AC
VTX-IDLE-SE-DC
VTX-IDLE-DIFFp-p
20
6
Maximum peak-to-peak differential voltage in EI
condition
40
Single-ended voltage (w.r.t. VSS) on D+/D-
Mimimum TX eye width, 3.2 and 4.0 Gb/s
Mimimum TX eye width 4.8 Gb/s
Maximum TX deterministic jitter, 3.2 and 4.8Gb/s
Insantaneous pulse width
VTX-SE
TTX-Eye-MIN
TTX-EYE-MIN4.8
TTX-DJ-DD
-75
750
mV
UI
1,7
1,8
UI
1,8
02
UI
1,8,9
10
TTX-PULSE
0.85
30
UI
Differential TX output rise/fall time
Mismatch between rise and fall times
Differential return loss
TTX-RISE TTX-FALL
TTX-RF-MISMATCH
RLTTX-DIFF
RLTX-CM
90
20
ps
ps
dB
dB
20-80% voltage, Note1
8
6
1 GHz-2.4 GHz, Note 11
1 GHz-2.4 GHz, Note 11
12
Common mode return loss
Transmitter termination impender
RTX
41
55
4
EQ 4, Boundaries are applied sepa-
rately to high and low output voltage
states
D+/D-TX Impedance difference
RTX-MATCH-DC
%
Lane-to lane skew at TX
Lane-to lane skew at TX
LTX-SKEW1
LTX-SKEW2
100+3UI
100=2UI
ps
ps
13, 15
14, 15
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FBDIMM
DDR2 SDRAM
Table 14 : Differential Receiver Input Specifications
Values
Parameter
Symbol
Units
Comments
MIN
MAX
1300
65
Differential peak-to-peak input voltage for large volt-
age swing
VRX-DIFFp-p
VRX-IDLE-SE
170
mV
mV
mV
EQ 5, Note1
Maximum single-ended voltage in El condition
2,3
2,3
Maximum single-ended voltage in Ei condition (DC
only)
VRX-IDLE-SE-DC
35
Maximum peak-to-peak differential voltage in El
condition
VRX-IDLE-DIFFp-p
65
mV
3
Single-ended voltage (w.r.t. VSS) on D+/D-
Single-pulse peak differential input voltage
Amplitude ratio between adjacent symbols
Maximum RX inherent timing error
Maximum RX inherent deterministic timing error
Differential RX input rise/fall time
VRX-SE
VRX-DIFF-PULSE
VRX-DIFF-ADJ-RATIO
TRX-TJ-MAX
-300
85
900
mV
mV
4
4,5
4.0
0.4
0.3
4,6
UI
UI
4,7,8
TRX-DJ-DD
4,7,8
TRX-PW-ZC
0.55
0.2
50
UI
4,5
Common mode fo the input voltage
Differential RX output rise/fall time
Common mode of input voltage
TRX-PW-ML
UI
4.5
20~80% voltage
EQ 6, Note1, 10
EQ 7, Note 1
11
TRX-RISE TRX-FALL
VRX-CM
ps
mV
mV
%
120
400
270
45
AC peak-to-peak common mode of input voltage
Ratio of VRX-CM-ACp-p to minimum VRX-DIFFp-p
Differential return loss
VRX-CM-ACp-p
VRX-CM-EH-RATOP
RLRX-DIFF
9
6
dB
dB
Ω
1GHz-2.4 GHz, Note 12
1GHz-2.4 GHz, Note 12
13
Common mode return loss
RLRX-CM
RX termination impedance
RRX
41
55
4
D+/D- RX Impedance difference
RRX-MATCH-DC
%
EQ 8
Lane-to-lane skew at the receiver that
must be tolerated. Note 14
Lane-to lane PCB skew at RX
LRX-PCB-SKEW
6
UI
Minimum RX drift tolerance
Minim data tracking 3dB bandwidth
Electrical idle entry detect time
Electrical idle exit detect time
Bit Error Ratio
TRX-DRIFT
FTRK
400
0.2
ps
MHz
ns
15
16
17
TEI-ENTRY-DETECT
TEI-EXIT-DETECT
BER
60
30
10-12
ns
18
Notes :
1. Specified at the package pins into a timing and voltage compliant test setup. Note that signal levels at the pad will be lower than at the pin.
2. Single-ended voltages below that value that are simultaneously detected on D+ and D-are interpreted as the Electrical Idle condition. Worst-case mar-
gins are determined for the case with transmitter using small voltage swing.
3. Multiple lanes need to detect the El condition before the device can act upon the El detection.
4. Specified at the package pins into a timing and voltage compliance test setup.
5. The single-pulse mask provides suffcient symbol energy for reliable RX reception. Each symbol must comply with both the single-pulse mask and the
cumulative eyemask.
6. The relative amplitude ratio limit between adjacent symbols prevents excessive intersymbol interference in the RX. Each symbol must comply with the
peak amplitude ratio with regard to both the preceding and subsequent symbols.
7. This number does not include the effects of SSC or reference clock jitter.
8. This number includes setup and hold of the RX sampling flop.
9. Defined as the dual-dirac deterministic timing error.
10. Allows for 15 mV DC offset between transmit and receive devices.
Rev. 1.52 April 2008
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FBDIMM
DDR2 SDRAM
11. The received differential signal must satisfy both this ratio as well as the absolute maximum AC peaktopeak common mode specification. For ex-
ample, if VRX-DIFFp-p is 200 mV, the maximum AC peak-to peak common mode is the lesser of (200 mV*0.45=90 mV)and VRX-CM-AC-p-p
.
12. One of the components that contribute to the deterioration of the return loss is the ESD structure which needs to be carefully designed.
13. The termination small signal resistance; tolerance across voltage from 100 mV to 400 mV shall not exceed +/-5 W with regard to the average of the
values measured at 100 mV and at 400 mV for that pin.
14. This number represents the lane-to-lane skew between TX and RX pins and does not include the transmitter output skew from the component of
the end-to-end channel skew in the AMB specification.
15. Measured from the reference clock edge to the center of the input eye. This specification must be met across specified voltage and temperature
ranges for a single component. Drift rate of change is significantly below the tracking capability of the receiver.
16. This bandwidth number assume the specified minimum data transition density. Maximum jitter at 0.2 MHz is 0.05 UI,
17. The specified time includes the time required to forward the El entry condition.
18. BER per differential lane.
V
RX-DIFFp-p = 2x[VRX-D+-VRX-D-] (EQ5)
(VRX-CM = DC(avg) of [VRX-D+ + VRX-D-] /2) (EQ 6)
VRX-CM-AC=((Max[VRX-D+ + VRX-D)/2)((Min [VRX-D+ + VRX-D-)/2) (EQ 7)
RRX-MATCH-DC = 2x((RRX-D+-RRX-D-)/(RRX-D+ + RRX-D-) (EQ 8)
Rev. 1.52 April 2008
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FBDIMM
DDR2 SDRAM
7.0 CHANNEL INITIALIZATION
This chapter defines the process of initializing the FBD channel. The FBD initialzation process generally follows the top to bottom se-
quence of state transitions shown in the high level AMB Initialization Flow diagram in Figure The host must sequence the AMB devices
through the Disable, (back to Disable), Training, Testing, and Polling states in order to transition the AMBs into the active channel L0
state. The value in parenthesis in each state bubble indicates the condition/activity of the links during these states.
Figure15 : AMB Initialization Flow Diagram
Power-up
Disable
Calibrate
(EI)
(1’s)
Tranining
(TS0)
Testing
(TS1)
Polling
(TS2)
Config
(TS3)
L0
L0s
(EI)
(EI)
Recalibrate
(NOP2)
The states in the AMB Initialization Flow diagram are :
Disable - The channel is inactive and the interface signals are in a low power Electrical Idle condition.
Training - The initial bit alignment and frame alignment training is done in this state.
Testing - Each bit lane is individually tested in this state.
Polling - The channel capabilities of the individual AMB devices are communicated in this state.
Config - The channel width configuration is communicated to the AMB devices in this state.
L0 - The channel is active and frames of information are flowing between the host and the AMB devices.
Recalibrate - The channel is momentarily idled to allow TX and Rx circuits to be recalibrated.
L0s - The channel is in a low-latency power saving condition. (Optional)
Each bit lane is initialized (mosly) independently to support fault tolerance. The transitions in the figure represent the transitions of the
AMB core logic state machine and are taken when the transition event is detected on the minimum required number of southound bit
lanes. The chain of FBD links connecting the host the AMBs must each be initialized to esabish the timing for broadcasting data frames
in the southbound direction and for merging data frame in the northbound direction. The AMBs on the channel are generally initialized
as a group but because each AMB is individually addressable many altemate may altemate initialization sequences may be employed.
Rev. 1.52 April 2008
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FBDIMM
DDR2 SDRAM
Figure 16 : FBDIMM Physical Dimension -1 (For PCB) : 128Mbx8 based 256Mx72 Module (2Rank)
M395T5663CZ4
133.35
126.85
2x 3.25
2x 2.50 MIN
d
AMB
c
b
2x DIA. 2.0 +0.1/-0
a
67
51
5.175
123
R0.595
6.0
1.19
R0.75
5.0
2.50
0.8 +/- 0.05
2.50
1.19
120°
2.25
3.80
1.25
1.00
MAX 0.178
DETAIL b
R0.595
1.50
DETAIL a
DETAIL c
DETAIL d
DETAIL e
Rev. 1.52 April 2008
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FBDIMM
DDR2 SDRAM
Figure 17 : FBDIMM Physical Dimension -2 (For Heat Spreader) : 128Mbx8 based 256Mx72 Module (2Rank)
M395T5663CZ4
Units : Millimeters
8.2 max
133.35
67
51
1.27 ± 0.10
Back
3.0 max
123
Rev. 1.52 April 2008
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FBDIMM
DDR2 SDRAM
Figure 18 : FBDIMM Physical Dimension -1 (For PCB) : 256Mbx4 based 512Mx72 Module (2Rank)
M395T5160CZ4
133.35
126.85
2x 3.25
2x 2.50 MIN
d
AMB
e
c
b
2x DIA. 2.0 +0.1/-0
a
67
51
5.175
123
R0.595
6.0
1.19
R0.75
5.0
2.50
0.8 +/- 0.05
2.50
1.19
120°
2.25
3.80
1.25
1.00
MAX 0.178
DETAIL b
R0.595
1.50
DETAIL a
DETAIL c
DETAIL d
DETAIL e
Rev. 1.52 April 2008
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FBDIMM
DDR2 SDRAM
Figure 19 : FBDIMM Physical Dimension -2 (For Heat Spreader): 256Mbx4 based 512Mx72 Module (2Rank)
M395T5160CZ4
Units : Millimeters
8.2 max
133.35
67
51
1.27 ± 0.10
Back
3.0 max
123
Rev. 1.52 April 2008
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相关型号:
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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