MD16R1624AF0-CN9 [SAMSUNG]

Rambus DRAM Module, 32MX32, CMOS, RIMM-232;
MD16R1624AF0-CN9
型号: MD16R1624AF0-CN9
厂家: SAMSUNG    SAMSUNG
描述:

Rambus DRAM Module, 32MX32, CMOS, RIMM-232

动态存储器
文件: 总16页 (文件大小:201K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
32 Bit RIMM® Module  
Overview  
Key Timing Parameters  
®
T h e 3 2 b i t R I M M module is a general purpose high-perfor-  
The following table lists the frequency and latency bins  
a v a i l a b l e f o r 3 2 b i t R I M M m o d u l e s .  
mance line of memory modules suitable for use in a broad  
range of applications including computer memory, personal  
computers, workstations, and other applications where high  
bandwidth and low latency are required.  
Table 1: 32 bit RIMM Module Frequency and Latency  
T h e 3 2 b i t R I M M m o d u l e c o n s i s t s o f 2 5 6 M b / 2 8 8 M b  
R D R A M devices. These are extremely high-speed CMOS  
S p e e d  
®
t
D R A M s o r g a n i z e d a s 1 6 M w o r d s b y 1 6 o r 1 8 b i t s . T h e u s e  
o f R a m b u s S i g n a l i n g L e v e l ( R S L ) t e c h n o l o g y p e r m i t s t h e  
use of conventional system and board design technologies.  
R I M M 3 2 0 0 m o d u l e s s u p p o r t 8 0 0 M H z t r a n s f e r r a t e p e r p i n ,  
resulting in total module bandwidth of 3200MB/s or  
3 . 2 G B / s . R I M M 4 2 0 0 m o d u l e s s u p p o r t 1 0 6 6 M H z t r a n s f e r  
rate per pin, resulting in total module bandwidth of  
4 2 0 0 M B / s o r 4 . 2 G B / s .  
RAC  
O r g a n i -  
( R o w  
A c c e s s  
T i m e )  
n s  
P a r t N u m b e r  
I / O F r e q .  
( M H z )  
z a t i o n  
32  
35  
32  
35  
32  
35  
M D 1 6 / 1 8 R 1 6 2 4 A F 0 - C N 9  
M D 1 6 / 1 8 R 1 6 2 4 A F 0 - C M 9  
M D 1 6 / 1 8 R 1 6 2 8 A F 0 - C N 9  
M D 1 6 / 1 8 R 1 6 2 8 A F 0 - C M 9  
M D 1 6 / 1 8 R 1 6 2 G A F 0 - C N 9  
M D 1 6 / 1 8 R 1 6 2 G A F 0 - C M 9  
3 2 M  
x
1 0 6 6 M H z  
1 0 6 6 M H z  
1 0 6 6 M H z  
3 2 / 3 6  
T h e 3 2 b i t R I M M m o d u l e p r o v i d e s t w o i n d e p e n d e n t 1 6 o r 1 8  
bit memory channels to facilitate compact system design.  
The "Thru" Channel enters and exits the module to support a  
connection to or from a controller, memory slot, or termina-  
t i o n . T h e " T e r m " C h a n n e l i s t e r m i n a t e d o n t h e m o d u l e a n d  
supports a connection from a controller or another memory  
slot.  
6 4 M  
x
R I M M 4 2 0 0  
3 2 / 3 6  
1 2 8 M  
3 2 / 3 6  
x
3 2 M  
x
M D 1 6 / 1 8 R 1 6 2 4 A F 0 - C M 8  
M D 1 6 / 1 8 R 1 6 2 8 A F 0 - C M 8  
M D 1 6 / 1 8 R 1 6 2 G A F 0 - C M 8  
3 2 / 3 6  
T h e R D R A M a r c h i t e c t u r e e n a b l e s t h e h i g h e s t s u s t a i n e d  
bandwidth for multiple, simultaneous, randomly addressed  
memory transactions. The separate control and data buses  
w i t h i n d e p e n d e n t r o w a n d c o l u m n c o n t r o l y i e l d o v e r 9 5 %  
bus efficiency. The RDRAM device multi-bank architecture  
supports up to four simultaneous transactions per device.  
6 4 M  
x
R I M M 3 2 0 0  
8 0 0 M H z  
40  
3 2 / 3 6  
1 2 8 M  
3 2 / 3 6  
x
Features  
¨
2 I n d e p e n d e n t R D R A M c h a n n e l s , 1 p a s s t h r o u g h a n d 1  
t e r m i n a t e d o n 3 2 b i t R I M M m o d u l e  
Form Factor  
¨
¨
¨
H i g h s p e e d 8 0 0 a n d 1 0 6 6 M H z R D R A M d e v i c e s  
2 3 2 e d g e c o n n e c t o r p a d s w i t h 1 m m p a d s p a c i n g  
M o d u l e P C B s i z e : 1 3 3 . 3 5 m m x 3 4 . 9 3 m m x 1 . 2 7 m m  
(5. 25” x 1. 375” x 0. 05” )  
T h e 3 2 b i t R I M M m o d u l e s a r e o f f e r e d i n 2 3 2 - p a d 1 m m e d g e  
c o n n e c t o r p a d p i t c h s u i t a b l e f o r 2 3 2 c o n t a c t R I M M c o n n e c -  
t ors.  
¨
¨
¨
¨
¨
Gold plated edge connector pad contacts  
Serial Presence Detect (SPD) support  
Operates from a 2. 5 volt supply (±5 % )  
L o w p o w e r a n d p o w e r d o w n s e l f r e f r e s h m o d e s  
S e p a r a t e R o w a n d C o l u m n b u s e s f o r h i g h e r e f f i c i e n c y  
Figure 1 : 32 bit RIMM module with heat spreader  
Page1  
Version 1.0 July 2002  
Preliminary  
32 Bit RIMM Module  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
®
Table 2: Module Pad Numbers and Signal Names  
Pin Pin Name  
Pin  
Pin Name  
Pin  
A 5 9  
P i n N a m e  
P i n  
B 5 9  
P i n N a m e  
A 1  
G n d  
B 1  
G n d  
G n d  
G n d  
A 2  
S C K _ T H R U _ L  
G n d  
B 2  
C M D _ T H R U _ L  
G n d  
A 6 0  
A 6 1  
A 6 2  
A 6 3  
A 6 4  
A 6 5  
A 6 6  
A 6 7  
A 6 8  
A 6 9  
A 7 0  
A 7 1  
A 7 2  
A 7 3  
A 7 4  
A 7 5  
A 7 6  
A 7 7  
A 7 8  
A 7 9  
A 8 0  
A 8 1  
A 8 2  
A 8 3  
A 8 4  
A 8 5  
A 8 6  
A 8 7  
A 8 8  
A 8 9  
A 9 0  
A 9 1  
A 9 2  
A 9 3  
A 9 4  
A 9 5  
A 9 6  
A 9 7  
A 9 8  
A 9 9  
A 1 0 0  
A 1 0 1  
A 1 0 2  
A 1 0 3  
A 1 0 4  
Vterm  
B 6 0  
B 6 1  
B 6 2  
B 6 3  
B 6 4  
B 6 5  
B 6 6  
B 6 7  
B 6 8  
B 6 9  
B 7 0  
B 7 1  
B 7 2  
B 7 3  
B 7 4  
B 7 5  
B 7 6  
B 7 7  
B 7 8  
B 7 9  
B 8 0  
B 8 1  
B 8 2  
B 8 3  
B 8 4  
B 8 5  
B 8 6  
B 8 7  
B 8 8  
B 8 9  
B 9 0  
B 9 1  
B 9 2  
B 9 3  
B 9 4  
B 9 5  
B 9 6  
B 9 7  
B 9 8  
B 9 9  
B 1 0 0  
B 1 0 1  
B 1 0 2  
B 1 0 3  
B 1 0 4  
Vterm  
A 3  
B 3  
Vterm  
Vterm  
A 4  
D Q A 8 _ T H R U _ L  
G n d  
B 4  
D Q A 7 _ T H R U _ L  
G n d  
G n d  
G n d  
A 5  
B 5  
D Q A 3 _ T H R U _ R  
D Q A 4 _ T H R U _ R  
A 6  
D Q A 6 _ T H R U _ L  
G n d  
B 6  
D Q A 5 _ T H R U _ L  
G n d  
G n d  
G n d  
A 7  
B 7  
D Q A 5 _ T H R U _ R  
D Q A 6 _ T H R U _ R  
A 8  
D Q A 4 _ T H R U _ L  
G n d  
B 8  
D Q A 3 _ T H R U _ L  
G n d  
G n d  
G n d  
A 9  
B 9  
D Q A 7 _ T H R U _ R  
D Q A 8 _ T H R U _ R  
G n d  
A 1 0  
A 1 1  
A 1 2  
A 1 3  
A 1 4  
A 1 5  
A 1 6  
A 1 7  
A 1 8  
A 1 9  
A 2 0  
A 2 1  
A 2 2  
A 2 3  
A 2 4  
A 2 5  
A 2 6  
A 2 7  
A 2 8  
A 2 9  
A 3 0  
A 3 1  
A 3 2  
A 3 3  
A 3 4  
A 3 5  
A 3 6  
A 3 7  
A 3 8  
A 3 9  
A 4 0  
A 4 1  
A 4 2  
A 4 3  
A 4 4  
A 4 5  
A 4 6  
D Q A 2 _ T H R U _ L  
G n d  
B 1 0  
B 1 1  
B 1 2  
B 1 3  
B 1 4  
B 1 5  
B 1 6  
B 1 7  
B 1 8  
B 1 9  
B 2 0  
B 2 1  
B 2 2  
B 2 3  
B 2 4  
B 2 5  
B 2 6  
B 2 7  
B 2 8  
B 2 9  
B 3 0  
B 3 1  
B 3 2  
B 3 3  
B 3 4  
B 3 5  
B 3 6  
B 3 7  
B 3 8  
B 3 9  
B 4 0  
B 4 1  
B 4 2  
B 4 3  
B 4 4  
B 4 5  
B 4 6  
D Q A 1 _ T H R U _ L  
G n d  
G n d  
V d d  
V d d  
D Q A 0 _ T H R U _ L  
G n d  
C T M N _ T H R U _ L  
G n d  
G n d  
G n d  
S C K _ T H R U _ R  
C T M N _ T E R M _ L  
G n d  
C F M _ T H R U _ L  
G n d  
C T M _ T H R U _ L  
G n d  
G n d  
C M D _ T H R U _ R  
C T M _ T E R M _ L  
G n d  
C F M N _ T H R U _ L  
G n d  
R O W 2 _ T H R U _ L  
G n d  
G n d  
V r e f  
V c m o s  
R O W 1 _ T H R U _ L  
G n d  
R O W 0 _ T H R U _ L  
G n d  
V d d  
V d d  
S V d d  
S W P  
C O L 4 _ T H R U _ L  
G n d  
C O L 3 _ T H R U _ L  
G n d  
V d d  
V d d  
S C L  
S D A  
C O L 2 _ T H R U _ L  
G n d  
C O L 1 _ T H R U _ L  
G n d  
V d d  
V d d  
S A 0  
S A 1  
C O L 0 _ T H R U _ L  
G n d  
D Q B 0 _ T H R U _ L  
G n d  
V d d  
V d d  
S A 2  
S I N _ T E R M  
G n d  
D Q B 1 _ T H R U _ L  
G n d  
D Q B 2 _ T H R U _ L  
G n d  
G n d  
D Q B 8 _ T E R M  
G n d  
D Q B 7 _ T E R M  
G n d  
D Q B 3 _ T H R U _ L  
G n d  
D Q B 4 _ T H R U _ L  
G n d  
D Q B 6 _ T E R M  
G n d  
D Q B 5 _ T E R M  
G n d  
D Q B 5 _ T H R U _ L  
G n d  
D Q B 6 _ T H R U _ L  
G n d  
D Q B 4 _ T E R M  
G n d  
D Q B 3 _ T E R M  
G n d  
D Q B 7 _ T H R U _ L  
G n d  
D Q B 8 _ T H R U _ L  
G n d  
D Q B 2 _ T E R M  
G n d  
D Q B 1 _ T E R M  
G n d  
S O U T _ T H R U  
G n d  
S I N _ T H R U  
G n d  
D Q B 0 _ T E R M  
G n d  
C O L 0 _ T E R M  
G n d  
D Q B 8 _ T H R U _ R  
G n d  
D Q B 7 _ T H R U _ R  
G n d  
C O L 1 _ T E R M  
G n d  
C O L 2 _ T E R M  
G n d  
D Q B 6 _ T H R U _ R  
G n d  
D Q B 5 _ T H R U _ R  
G n d  
C O L 3 _ T E R M  
G n d  
C O L 4 _ T E R M  
G n d  
D Q B 4 _ T H R U _ R  
G n d  
D Q B 3 _ T H R U _ R  
G n d  
R O W 0 _ T E R M  
G n d  
R O W 1 _ T E R M  
G n d  
D Q B 2 _ T H R U _ R  
G n d  
D Q B 1 _ T H R U _ R  
G n d  
R O W 2 _ T E R M  
G n d  
C F M N _ T E R M  
G n d  
D Q B 0 _ T H R U _ R  
G n d  
C O L 0 _ T H R U _ R  
G n d  
C T M _ T E R M _ R  
G n d  
C F M _ T E R M  
G n d  
C O L 1 _ T H R U _ R  
C O L 2 _ T H R U _ R  
Page2  
Version 1.0 July 2002  
Preliminary  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
32 Bit RIMM® Module  
Table 2: Module Pad Numbers and Signal Names (Continued)  
Pin  
A47  
Pin Name  
Pin  
B47  
Pin Name  
Pin  
Pin Name  
Pin  
Pin Name  
Gnd  
Gnd  
A105  
A106  
A107  
A108  
A109  
A110  
A111  
A112  
A113  
A114  
A115  
A116  
CTMN_TERM_R  
Gnd  
B105  
B106  
B107  
B108  
B109  
B110  
B111  
B112  
B113  
B114  
B115  
B116  
DQA0_TERM  
Gnd  
A48  
A49  
A50  
A51  
A52  
A53  
A54  
A55  
A56  
A57  
A58  
COL3_THRU_R  
Gnd  
B48  
B49  
B50  
B51  
B52  
B53  
B54  
B55  
B56  
B57  
B58  
COL4_THRU_R  
Gnd  
DQA1_TERM  
Gnd  
DQA2_TERM  
Gnd  
ROW0_THRU_R  
Gnd  
ROW1_THRU_R  
Gnd  
DQA3_TERM  
Gnd  
DQA4_TERM  
Gnd  
ROW2_THRU_R  
Gnd  
CFMN_THRU_R  
Gnd  
DQA5_TERM  
Gnd  
DQA6_TERM  
Gnd  
CTM_THRU_R  
Gnd  
CFM_THRU_R  
Gnd  
DQA7_TERM  
Gnd  
DQA8_TERM  
Gnd  
CTMN_THRU_R  
Gnd  
DQA0_THRU_R  
Gnd  
CMD_TERM  
Gnd  
SCK_TERM  
Gnd  
DQA1_THRU_R  
DQA2_THRU_R  
Table 3: Module Connector Pad Description  
Signal  
Module Connector Pads  
A14  
I/O  
I
Type  
RSL  
Description  
CFM_THRU_L  
CFM_THRU_R  
CFMN_THRU_L  
CFMN_THRU_R  
CMD_THRU_L  
CMD_THRU_R  
Clock From Master. Connects to left RDRAM device on "Thru"  
Channel. Interface clock used for receiving RSL signals from the  
controller. Positive polarity.  
B54  
A16  
B52  
B2  
Clock From Master. Connects to right RDRAM device on "Thru"  
Channel. Interface clock used for receiving RSL signals from the  
controller. Positive polarity.  
I
I
I
I
I
I
I
I
RSL  
RSL  
RSL  
Clock From Master. Connects to left RDRAM device on "Thru"  
Channel. Interface clock used for receiving RSL signals from the  
controller. Negative polarity.  
Clock From Master. Connects to right RDRAM device on "Thru"  
Channel. Interface clock used for receiving RSL signals from the  
controller. Negative polarity.  
Serial Command Input used to read from and write to the control  
VCMOS registers. Also used for power management. Connects to left  
RDRAM device on "Thru" Channel.  
A73  
Serial Command Input used to read from and write to the control  
VCMOS registers. Also used for power management. Connects to right  
RDRAM device on "Thru" Channel.  
COL4_THRU_L..C A20, B20, A22, B22, A24  
OL0_THRU_L  
"Thru" Channel Column bus. 5-bit bus containing control and  
address information for column accesses. Connects to left RDRAM  
device on "Thru" Channel.  
RSL  
RSL  
RSL  
COL4_THRU_R..C B48, A48, B46, A46, B44  
OL0_THRU_R  
"Thru" Channel Column bus. 5-bit bus containing control and  
address information for column accesses. Connects to right  
RDRAM device on "Thru" Channel.  
CTM_THRU_L  
B14  
Clock To Master. Connects to left RDRAM device on "Thru"  
Channel. Interface clock used for transmitting RSL signals to the  
controller. Positive polarity.  
Page 3  
Version 1.0 July 2002  
Preliminary  
32 Bit RIMM Module  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
®
Table 3: Module Connector Pad Description (Continued)  
Signal  
M o d u l e C o n n e c t o r P a d s  
I/O  
T y p e  
D e s c r i p t i o n  
CTM_THRU_R  
A54  
B12  
A56  
Clock To Master. Connects to right RDRAM device on "Thru"  
Channel. Interface clock used for transmitting RSL signals to the  
controller. Positive polarity.  
I
RSL  
CTMN_THRU_L  
CTMN_THRU_R  
Clock To Master. Connects to left RDRAM device on "Thru"  
Channel. Interface clock used for transmitting RSL signals to the  
controller. Negative polarity.  
I
I
RSL  
RSL  
Clock To Master. Connects to right RDRAM device on "Thru"  
Channel. Interface clock used for transmitting RSL signals to the  
controller. Negative polarity.  
DQA8_THRU_L..  
DQA0_THRU_L  
A4, B4, A6, B6, A8, B8,  
A10, B10, A12  
"Thru" Channel Data bus A. A 9-bit bus carrying a byte of read or  
write data between the controller and RDRAM devices on “Thru”  
Channel. Connects to left RDRAM device on "Thru" Channel.  
DQA8_THRU_L is non-functional on modules with x16 RDRAM  
devices.  
I/O  
I/O  
I/O  
I/O  
RSL  
RSL  
RSL  
RSL  
DQA8_THRU_R..  
DQA0_THRU_R  
B67, A67, B65, A65, B63,  
A63, B58, A58, B56  
"Thru" Channel Data bus A. A 9-bit bus carrying a byte of read or  
write data between the controller and RDRAM devices on “Thru”  
Channel. Connects to right RDRAM device on "Thru" Channel.  
DQA8_THRU_R is non-functional on modules with x16 RDRAM  
devices.  
DQB8_THRU_L..  
DQB0_THRU_L  
B32, A32, B30, A30, B28,  
A28, B26, A26, B24  
"Thru" Channel Data bus B. A 9-bit bus carrying a byte of read or  
write data between the controller and RDRAM devices on “Thru”  
Channel. Connects to left RDRAM device on "Thru" Channel.  
DQB8_THRU_L is non-functional on modules with x16 RDRAM  
devices.  
DQB8_THRU_R..  
DQB0_THRU_R  
A36, B36, A38, B38, A40,  
B40, A42, B42, A44  
"Thru" Channel Data bus B. A 9-bit bus carrying a byte of read or  
w r i t e d a t a b e t w e e n t h e c o n t r o l l e r a n d R D R A M d e v i c e s o n “ T h r u ”  
C h a n n e l . C o n n e c t s t o r i g h t R D R A M d e v i c e o n " T h r u " C h a n n e l .  
D Q B 8 _ T H R U _ R i s n o n - f u n c t i o n a l o n m o d u l e s w i t h x 1 6 R D R A M  
devices.  
R O W 2 _ T H R U _ L . .  
R O W 0 _ T H R U _ L  
B 1 6 , A 1 8 , B 1 8  
A 5 2 , B 5 0 , A 5 0  
Row bus. 3-bit bus containing control and address information for  
row accesses. C o n n e c t s t o l e f t R D R A M d e v i c e o n " T h r u " C h a n n e l .  
I
I
R S L  
R S L  
R O W 2 _ T H R U _ R . .  
R O W 0 _ T H R U _ R  
Row bus. 3-bit bus containing control and address information for  
row accesses. C o n n e c t s t o r i g h t R D R A M d e v i c e o n " T h r u " C h a n -  
nel.  
S C K _ T H R U _ L  
S C K _ T H R U _ R  
S I N _ T H R U  
A 2  
Serial Clock input. Clock source used to read from and write to  
I
I
V C M O S " T h r u " C h a n n e l R D R A M c o n t r o l r e g i s t e r s . Connects to left  
R D R A M d e v i c e o n " T h r u " C h a n n e l .  
A 7 1  
B 3 4  
Serial Clock input. Clock source used to read from and write to  
V C M O S " T h r u " C h a n n e l R D R A M c o n t r o l r e g i s t e r s . Connects to right  
R D R A M d e v i c e o n " T h r u " C h a n n e l .  
"Thru" Channel Serial I/O for reading from and writing to the con-  
V C M O S trol registers. Attaches to SIO0 of right RDRAM device on "Thru"  
C h a n n e l .  
I/O  
Page4  
Version 1.0 July 2002  
Preliminary  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
32 Bit RIMM® Module  
Table 3: Module Connector Pad Description (Continued)  
Signal  
Module Connector Pads  
I/O  
Type  
Description  
S O U T _ T H R U  
A 3 4  
"Thru" Channel Serial I/O for reading from and writing to the con-  
I/O  
V C M O S trol registers. Attaches to SIO1 of left RDRAM device on "Thru"  
C h a n n e l .  
C F M _ T E R M  
C F M N _ T E R M  
C M D _ T E R M  
B 1 0 3  
C l o c k f r o m m a s t e r . C o n n e c t s t o r i g h t R D R A M d e v i c e o n " T e r m "  
I
R S L  
R S L  
Channel. Interface clock used for receiving RSL signals from the  
controller. Positive polarity.  
B 1 0 1  
C l o c k f r o m m a s t e r . C o n n e c t s t o r i g h t R D R A M d e v i c e o n " T e r m "  
Channel. Interface clock used for receiving RSL signals from the  
controller. Negative polarity.  
I
A 1 1 5  
Serial Command Input used to read from and write to the control  
I
V C M O S registers. Also used for power management. Connects to right  
RDRAM device on "Term" Channel.  
COL4_TERM..  
COL0_TERM  
B97, A97, B95, A95, B93  
"Term" Channel Column bus. 5-bit bus containing control and  
address information for column accesses. Connects to right  
RDRAM device on "Term" Channel.  
I
I
I
I
I
RSL  
RSL  
RSL  
RSL  
RSL  
CTM_TERM_L  
CTM_TERM_R  
CTMN_TERM_L  
CTMN_TERM_R  
B73  
Clock To Master. Connects to left RDRAM device on "Term"  
Channel. Interface clock used for transmitting RSL signals to the  
controller. Positive polarity.  
A103  
B71  
Clock To Master. Connects to right RDRAM device on "Term"  
Channel. Interface clock used for transmitting RSL signals to the  
controller. Positive polarity.  
Clock To Master. Connects to left RDRAM device on "Term"  
Channel. Interface clock used for transmitting RSL signals to the  
controller. Negative polarity.  
A105  
Clock To Master. Connects to right RDRAM device on "Term"  
Channel. Interface clock used for transmitting RSL signals to the  
controller. Negative polarity.  
DQA8_TERM..  
DQA0_TERM  
B113, A113, B111, A111,  
B109, A109, B107, A107,  
B105  
"Term" Channel Data bus A. A 9-bit bus carrying a byte of read or  
write data between the controller and RDRAM devices on “Term”  
Channel. Connects to right RDRAM device on "Term" Channel.  
DQA8_TERM is non-functional on modules with x16 RDRAM  
devices.  
I/O  
I/O  
RSL  
DQB8_TERM..  
DQB0_TERM  
A85, B85, A87, B87, A89,  
B89, A91, B91, A93  
"Term" Channel Data bus B. A 9-bit bus carrying a byte of read or  
write data between the controller and RDRAM devices on “Term”  
Channel. Connects to right RDRAM device on "Term" Channel.  
DQB8_TERM is non-functional on modules with x16 RDRAM  
devices.  
RSL  
RSL  
ROW2_TERM..  
ROW0_TERM  
A101, B99, A99  
B115  
"Term" Channel Row bus. 3-bit bus containing control and address  
information for row accesses. Connects to right RDRAM device on  
"Term" Channel.  
I
I
SCK_TERM  
Serial Clock input. Clock source used to read from and write to  
VCMOS "Term" Channel RDRAM control registers. Connects to right  
RDRAM device on "Term" Channel.  
Page 5  
Version 1.0 July 2002  
Preliminary  
32 Bit RIMM Module  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
®
Table 3: Module Connector Pad Description (Continued)  
Signal  
SIN_TERM  
Module Connector Pads  
I/O  
Type  
Description  
B83  
"Term" Channel Serial I/O for reading from and writing to the con-  
I/O VCMOS trol registers. Attaches to SIO0 of left RDRAM device on "Term"  
Channel.  
VTERM  
Gnd  
A60, B60, A61, B61  
"Term" Channel Termination voltage.  
A1, A3, A5, A7, A9, A11,  
A13, A15, A17, A19, A21,  
A23, A25, A27, A29, A31,  
A33, A35, A37, A39, A41,  
A43, A45, A47, A49, A51,  
A53, A55, A57, A59, A62,  
A64, A66, A68, A70, A72,  
A74, A84, A86, A88, A90,  
A92, A94, A96, A98, A100,  
A102, A104, A106, A108,  
A110, A112, A114, A116,  
B1, B3, B5, B7, B9, B11,  
B13, B15, B17, B19, B21,  
B23, B25, B27, B29, B31,  
B33, B35, B37, B39, B41,  
B43, B45, B47, B49, B51,  
B53, B55, B57, B59, B62,  
B64, B66, B68, B70, B72,  
B74, B84, B86, B88, B90,  
B92, B94, B96, B98, B100,  
B102, B104, B106, B108,  
B110, B112, B114, B116  
Ground reference for RDRAM core and interface.  
SA0  
A81  
B81  
A83  
A79  
B79  
A77  
Serial Presence Detect Address 0.  
Serial Presence Detect Address 1.  
Serial Presence Detect Address 2.  
Serial Presence Detect Clock.  
I
I
SVDD  
SVDD  
SVDD  
SVDD  
SVDD  
SA1  
SA2  
I
SCL  
SDA  
SVDD  
I
Serial Presence Detect Data (Open Collector I/O).  
I/O  
SPD Voltage. Used for signals SCL, SDA, SWE, SA0, SA1 and  
SA2.  
SWP  
B77  
B75  
Serial Presence Detect Write Protect (active high). When low, the  
SPD can be written as well as read.  
I
SVDD  
VCMOS  
Vdd  
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.  
Supply voltage for the RDRAM core and interface logic.  
A69, B69, A76, B76, A78,  
B78, A80, B80, A82, B82  
Vref  
A75  
Logic threshold reference voltage for both "Thru" Channel and  
"Term" Channel RSL signals.  
Page6  
Version 1.0 July 2002  
Preliminary  
32 Bit RIMM Module  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
®
Vdd  
2 per  
RDRAM device  
0.22mF  
Gnd  
VREF  
S I O 0  
Left RDRAM Device of "Thru" Channel  
S I O 1  
S C K  
C M D  
V ref  
1 per  
2 RDRAM devices  
P l u s o n e  
(256/288Mb)  
N e a r C o n n e c t o r  
0.22mF  
Gnd  
.
.
.
VCMOS  
SIO0  
SIO1  
SCK  
CMD  
Vref  
1 per  
2 RDRAM devices  
0.22mF  
Right RDRAM Device of "Thru" Channel  
(256/288Mb)  
Gnd  
SVDD  
0.22mF  
Gnd  
Vterm  
Vterm  
1 per  
2 termination  
resistors  
Gnd  
SIO 0  
SIO 1  
S C K  
C M D  
V ref  
Left RDRAM Device of "Term" Channel  
(256/288Mb)  
Module  
Capacity  
N
.
.
.
512/576MB 16  
256/288MB  
128/144MB  
8
4
SIO0  
SIO1  
SCK  
CMD  
Vref  
Right RDRAM Device of "Term" Channel  
(256/288Mb)  
SVDD  
Vcc  
SCL  
SWP  
SDA  
SCL  
WP  
SDA  
A0 A1 A2  
SA0  
SA1  
SA2  
U0  
Serial Presence Detect  
Figure 1: 32 bit RIMM Module Functional Diagram  
Page7  
Version 1.0 July 2002  
Preliminary  
32 Bit RIMM Module  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
®
Absolute Maximum Ratings  
Table 4 : Absolute Maximum Ratings  
Symbol  
VI,ABS  
Parameter  
Min  
Max  
Unit  
Voltage applied to any RSL or CMOS signal pad with respect to Gnd  
Voltage on VDD with respect to Gnd  
Storage temperature  
- 0.3  
- 0.5  
- 50  
-
VDD + 0.3  
VDD + 1.0  
100  
V
VDD,ABS  
TSTORE  
TPLATE  
V
°C  
°C  
Plate temperature  
92  
DC Recommended Electrical Conditions  
Table 5 : DC Recommended Electrical Conditions  
Symbol  
VDD  
Parameter and Conditions  
Min  
Max  
Unit  
Supply voltage a  
2.50 - 0.13  
2.50 + 0.13  
V
VCMOS  
CMOS I/O power supply at pad for 2.5V controllers:  
CMOS I/O power supply at pad for 1.8V controllers:  
VDD  
1.8 - 0.1  
VDD  
1.8 + 0.2  
V
V
VREF  
Reference voltagea  
1.4 - 0.2  
1.4 + 0.2  
3.6  
V
V
V
V
SVdd  
Serial Presence Detector- positive power supply  
Termination Voltage  
2.2  
1.8 - 0.09  
-
VTERM  
1.8 + 0.09  
0.46  
VTERMVREF Nominal RSL signal half swing  
a. see Direct RDRAM datasheet for more details  
32 bit RIMM Module Capacity and Number of RDRAM device  
Table 6: 32 bit RIMM Module Capacity and Number of RDRAM device  
512/576MB  
16  
256/288MB  
8
128/144MB  
4
Unit  
Number of 256/288Mb RDRAM Devices  
pcs  
channel 1  
channel 2  
8
8
4
4
2
2
Page8  
Version 1.0 July 2002  
Preliminary  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
32 Bit RIMM® Module  
32 bit RIMM Module Current Profile  
Table 7 : 32bit RIMM Module Current Profile  
5 1 2 / 5 7 6 M B  
M a x  
2 5 6 / 2 8 8 M B  
M a x  
1 2 8 / 1 4 4 M B  
M a x  
T o t a l 3 2 b i t R I M M M o d u l e C a p a c i t y  
3 2 b i t R I M M m o d u l e p o w e r c o n d i t i o n s  
I D D  
U n i t  
a
R I M M 4 2 0 0  
R I M M 3 2 0 0  
R I M M 4 2 0 0  
R I M M 3 2 0 0  
R I M M 4 2 0 0  
R I M M 3 2 0 0  
R I M M 4 2 0 0  
R I M M 3 2 0 0  
R I M M 4 2 0 0  
R I M M 3 2 0 0  
R I M M 4 2 0 0  
R I M M 3 2 0 0  
1 5 1 6 / 1 6 4 2 c  
1 1 7 6 / 1 2 7 6  
3 3 5 0 / 3 4 7 6  
2 2 4 0 / 2 3 4 0  
4 4 7 0 / 4 5 9 6  
2 8 0 0 / 2 9 0 0  
1 6 6 8 / 1 8 2 4  
1 2 9 6 / 1 4 1 6  
3 5 0 2 / 3 6 5 8  
2 3 6 0 / 2 4 8 0  
4 6 2 2 / 4 7 7 8  
2 9 2 0 / 3 0 4 0  
1 4 8 4 / 1 6 1 0  
1 1 4 4 / 1 2 4 4  
2 2 7 0 / 2 3 9 6  
1 6 0 0 / 1 7 0 0  
2 7 5 0 / 2 8 7 6  
1 8 4 0 / 1 9 4 0  
1 6 3 6 / 1 7 9 2  
1 2 6 4 / 1 3 8 4  
2 4 2 2 / 2 5 7 8  
1 7 2 0 / 1 8 4 0  
2 9 0 2 / 3 0 5 8  
1 0 6 0 / 2 0 8 0  
1 4 6 8 / 1 5 9 4  
1 1 2 8 / 1 2 2 8  
1 7 3 0 / 1 8 5 6  
1 2 8 0 / 1 3 8 0  
1 8 9 0 / 2 0 1 6  
1 3 6 0 / 1 4 6 0  
1 6 2 0 / 1 7 7 6  
1 2 4 8 / 1 3 6 8  
1 8 8 2 / 2 0 3 8  
1 4 0 0 / 1 5 2 0  
2 0 4 2 / 2 1 9 8  
1 4 8 0 / 1 6 0 0  
O n e R D R A M d e v i c e p e r c h a n n e l i n R e a db  
b a l a n c e i n N A P m o d e  
,
,
,
ID D 1  
m A  
m A  
m A  
m A  
m A  
m A  
O n e R D R A M d e v i c e p e r c h a n n e l i n R e a db  
b a l a n c e i n S t a n d b y m o d e  
ID D 2  
ID D 3  
ID D 4  
ID D 5  
ID D 6  
O n e R D R A M d e v i c e p e r c h a n n e l i n R e a db  
balance in Active mode  
O n e R D R A M d e v i c e p e r c h a n n e l i n W r i t e ,  
b a l a n c e i n N A P m o d e  
O n e R D R A M d e v i c e p e r c h a n n e l i n W r i t e ,  
b a l a n c e i n S t a n d b y m o d e  
O n e R D R A M d e v i c e p e r c h a n n e l i n W r i t e ,  
balance in Active mode  
a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh Current.  
b . I / O c u r r e n t i s a f u n c t i o n o f t h e % o f 1 ’ s , t o a d d I / O p o w e r f o r 5 0 % 1 ’ s f o r a X 1 6 n e e d t o a d d 2 5 7 m A o r 2 9 0 m A f o r X 1 8 E C C m o d u le for the follow-  
ing: V = 2 . 5 V , V = 1 . 8 V , V = 1 . 4 V a n d V = V - 0 . 5 V .  
DD  
T E R M  
R E F  
DIL  
R E F  
c. Current values represent X32( N o n - E c c ) / X 3 6 ( E c c )  
Page 9  
Version 1.0 July 2002  
Preliminary  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
32 Bit RIMM® Module  
AC Electrical Specifications  
Table 8 : AC Electrical Specifications  
P a r a m e t e r a n d C o n d i t i o n s : a  
S y m b o l  
M i n  
T y p  
M a x  
Unit  
1 2 8 M B , 2 5 6 M B , 5 1 2 M B M o d u l e s  
Z L  
M o d u l e I m p e d a n c e o f R S L S i g n a l s  
25.2  
23.8  
28.0  
28.0  
30.8  
32.2  
W
W
Z U L - C M O S  
M o d u l e I m p e d a n c e o f S C K a n d C M D s i g n a l s  
T P D  
Propagation Delay variation of RSL signals. Average clock delay from  
f i n g e r t o f i n g e r o f a l l R S L c l o c k n e t s ( C T M , C T M N , C F M , a n d  
C F M N )  
See  
t a b l e 1 0 b  
ps  
a,c  
DTPD  
Propagation delay variation of RSL signals with respect to TPD  
-21  
21  
ps  
ps  
DTPD-CMOS  
Propagation delay variation of SCK signal with respect to an average clock  
delay a  
-250  
250  
DTPD-SCK,CMD  
Propagation delay variation of CMD signal with respect to SCK  
signal  
-200  
200  
ps  
Va /VIN  
VXF/VIN  
VXB/VIN  
RDC  
Attenuation Limit  
17.0  
4.0  
%
%
Forward crosstalk coefficient (300ps input rise time @ 20%-80%)  
Backward crosstalk coefficient (300ps input rise time @ 20%-80%)  
DC Resistance Limit  
2.0  
0.8  
%
-
-
W
a. Specifications apply per channel  
b. T or Average clock delay is defined as the delay from finger to finger of RSL signal.  
PD  
c. If the module meets the following specification, it is compliant to the specification. If the module does not meet these specifications, the specifica-  
tion can be adjusted by the “Adjusted DT Specification” table 9 below.  
PD  
Adjusted DTPD Specification  
Table 9 : Adjusted  
DTPD Specification  
Adjusted  
Min/Max  
Absolute  
Min / Max  
Symbol  
DTPD  
Parameter and Conditions  
Unit  
Propagation delay variation of RSL signals with  
respect to TPD for 4, 8, and 16 device modules  
+/-  
[17+(18*(N/  
2) *DZ0)]a  
-30  
30  
ps  
a. Where:  
N = Number of RDRAM devices installed on the RIMM module  
DZ0 = delta Z0% = (max Z0 - min Z0)/(min Z0)  
(max Z0 and min Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the modules)  
P a g e 1 0  
Version 1.0 July 2002  
Preliminary  
32 Bit RIMM Module  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
®
32bit RIMM Module TPD Specification  
Table 10 : 32 bit RIMM Module TPD Specification  
32 bit RIMM Module Capacity  
512MB  
Max  
256MB  
Max  
128MB  
Max  
IDD  
Unit  
Parameter and Condition for RIMM4200,  
RIMM3200  
TPD  
Propagation delay per channel, all RSL signals  
1.36  
1.02  
0.89  
ns  
Page11  
Version 1.0 July 2002  
Preliminary  
32 Bit RIMM Module  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
®
Physical Dimensions -1 ( For PCB )  
The following defines the 2 channel RDRAM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate.  
The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005].  
133.35±0.127[5.250±0.005]  
2.85[0.112]  
2.85[0.112]  
120.65[4.75]  
4.00±0.15  
[0.157±0.006]  
DIA 2.44  
COMPONENT AREA  
(A SIDE)  
R 2.00  
7 . 4 6 8 [ 0 . 2 9 4 ]  
A-1  
A-116  
1.00[0.039]  
5.68[0.2236]  
8. 60[0. 339]  
B - 1 1 6  
B - 1  
COMPONENT AREA  
(B SIDE)  
R 2 . 0 0  
D I A 2 . 4 4  
N o t e : T h e g r a y a r e a a b o v e r e p r e s e n t s t h e c o n t a c t s u r f a c e o f t h e h e a t s p r e a d e r .  
0 . 8 0± 0 . 1 0  
[ 0 . 0 3 1± 0. 004]  
Heat spreader  
1 . 0 0 [0. 039]  
3.00 ± 0. 10  
[ 0 . 1 2± 0. 004]  
Min. 4. 88  
[0. 192]  
0. 3± 0 . 1 0  
2. 99± 0. 05  
[0. 12± 0. 002]  
3 . 0 0± 0 . 1 0  
[ 0 . 1 1 9± 0. 004]  
[0. 012±0. 004]  
DETAIL A  
DETAIL B  
Figure 3 : 32 bit RIMM Module PCB Physical Dimensions  
Page12  
Version 1.0 July 2002  
Preliminary  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
32 Bit RIMM® Module  
Physical Dimensions -2 ( For Heat Spreader )  
T h e f o l l o w i n g d e f i n e s t h e 2 c h a n n e l R D R A M m o d u l e d i m e n s i o n s . A l l u n i t s a r e i n m i l l i m e t e r s w i t h i n c h e s i n b r a c k e t s [ ] , w h e r e a p p ropriate.  
The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005].  
132.76±0.25[5.226±0.009]  
127.66±0.12[5.023±0.005]  
112.7±0.12[4.436±0.005]  
2.9[0.114]  
DIA 2. 36± 0.05[0.09 ±0 . 0 0 1 ]  
Center-Point  
http://www.samsungsemi.com  
WARNING ! HOT SURFACE  
1.00±0.07  
[0.04±0.002]  
12.7±0.07[0.5±0.002] 12.7±0.07[0.5±0.002]  
133.35±0.127[5.250±0.005]  
A
http://www.samsungsemi.com  
WARNING ! HOT SURFACE  
A
SECTION A-A  
SECTION A-A  
Max 7.80  
[0.307]  
Max 4.70  
[0.185]  
Heat Spreader  
Heat Spreader  
CSP  
CSP  
Thermal  
Thermal  
Conductive  
Gap Filling  
Material  
Conductive  
Gap Filling  
Material  
PCB  
PCB  
1.27±0.10  
[0.050±0.004]  
1.27±0.10  
[0.050±0.004]  
[ Single side module ]  
[ Double side module]  
Figure 4: 32 bit RIMM Heat Spreader Physical Dimensions  
P a g e 1 3  
Version 1.0 July 2002  
Preliminary  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
32 Bit RIMM® Module  
32 bit RIMM Module Marking  
T h e 3 2 b i t R I M M m o d u l e s a v a i l a b l e f r o m S a m s u n g a r e  
marked like Figure 5 below. This marking also assists users  
to specify and verify if the correct 32 bit RIMM modules are  
installed in their systems. In the diagram, a label is shown  
a t t a c h e d t o t h e 3 2 b i t R I M M m o d u l e s heat spreader.  
Information contained on the label is specific to the 32 bit  
R I M M m o d u l e a n d p r o v i d e s R D R A M i n f o r m a t i o n w i t h o u t  
r e q u i r i n g r e m o v a l o f t h e 3 2 b i t R I M M m o d u l e ’ s h e a t  
spreader.  
A
B
C
D
E
F
G
J
I
H
K
Label Field  
Description  
Marked Text  
Unit  
A
B
C
Vendor Logo  
Country  
32 bit RIMM Vendor SAMSUNG Logo Area  
Country of origin  
SAMSUNG  
KOREA  
yyww  
-
-
-
Year & Week code Manufactured Year & Week code  
Module Memory  
Capacity  
Number of 8-bit or 9-bit MBytes of RDRAM storage in 32 bit  
RIMM module  
128/144MB, 256/288MB,  
512/576MB  
D
E
F
-
Number of  
RDRAMs  
Number of RDRAM devices contained in the 32 bit RIMM  
module  
RDRAM  
devices  
4/8/16  
Indicates whether the 32 bit RIMM module supports 8 (no  
ECC) or 9 (ECC) bit Bytes  
blank = 8 bit Bytes  
ECC = 9 bit Bytes  
ECC Support  
-
G
H
Notice!  
Hot surface caution notice.  
ISO Standard  
-
-
-
-
Caution Logo  
Gerber : 10 = 1.0 ver.  
SPD : 2 = 1.3 ver.  
Gerber & SPD  
Version  
PCB Gerber file & SPD code version used on 32 bit RIMM  
Module  
I
-
J
Product Name  
Part No.  
Product Name  
RIMM4200, RIMM3200  
See Table 1  
ns  
-
K
SAMSUNG 32 bit RIMM part No.  
Figure 5 : 32 bit RIMM Marking Example  
P a g e 1 4  
Version 1.0 July 2002  
Preliminary  
32 Bit RIMM Module  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
®
Table Of Contents  
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Key Timing Parameters/Part Numbers . . . . . . . . . . . . . . . . 1  
Module Pad Numbers and Signal Names . . . . . . . . . . . 2 - 3  
Module Connector Pad Description . . . . . . . . . . . . . . . 3 - 6  
32 bit RIMM Module Functional Diagram . . . . . . . . . . . . . 7  
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . 8  
DC Recommended Electrical Conditions . . . . . . . . . . . . . . 8  
32 bit RIMM Module Supply Current Profile . . . . . . . . . . . 9  
AC Electrical Specifications . . . . . . . . . . . . . . . . . . . 10 - 11  
Physical Dimensions -1 ( For PCB ) . . . . . . . . . . . . . . . . . 12  
Physical Dimensions -2 ( For Heat Spreader) . . . . . . . . . . 13  
Standard 32 bit RIMM Module Marking . . . . . . . . . . . . . 14  
Copyright © July 2002, Samsung Electronics.  
All rights reserved.  
Direct Rambus and Direct RDRAM, SO-RIMM and RIMM  
are trademarks of Rambus Inc. Rambus, RDRAM, and the  
Rambus Logo are registered trademarks of Rambus Inc.  
This document contains advanced information that is subject  
to change by Samsung Electronics without notice  
Document Version 1.0  
Samsung Electronics Co. Ltd.  
San #16 Banwol-ri, Taean-Eup Hwasung-City,  
Gyeonggi-Do, KOREA  
Telephone: 82-31-208-6369  
Fax: 82-31-208-6799  
http://www.intl.samsungsemi.com  
Page15  
Version 1.0 July 2002  
Preliminary  
32 Bit RIMM Module  
MD16R1624(8/G)AF0  
MD18R1624(8/G)AF0  
®
Page16  
Version 1.0 July 2002  

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