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元器件品牌
MR18R162GEG0-CT9
[SAMSUNG]
Key Timing Parameters; 关键时序参数
元器件型号:
MR18R162GEG0-CT9
生产厂家:
SAMSUNG SEMICONDUCTOR
描述和应用:
Key Timing Parameters
关键时序参数
存储 内存集成电路 动态存储器 时钟
PDF文件:
总16页 (文件大小:443K)
下载文档:
下载PDF数据表文档文件
型号参数:MR18R162GEG0-CT9参数
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SAMSUNG
MR18R162WDG0-CM8
Rambus DRAM Module, 512MX18, 40ns, CMOS, RIMM-184
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156
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SAMSUNG
MR18R326GAG0
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V
Warning
: Undefined variable $rtag in
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13
SAMSUNG
MR18R326GAG0-CM8
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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16
SAMSUNG
MR18R326GAG0-CM8
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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17
SAMSUNG
MR18R326GAG0-CT9
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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21
SAMSUNG
MR18R326GAG0-CT9
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V
Warning
: Undefined variable $rtag in
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156
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15
SAMSUNG
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256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
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19
FREESCALE
MR1A08ACYS35
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
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156
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13
FREESCALE
MR1A08ACYS35
256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
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156
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11
FREESCALE
MR1A08ATS35C
SPECIALTY MEMORY CIRCUIT, PDSO44, 0.400 MM, ROHS COMPLIANT, PLASTIC, TSOP2-44
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0
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MR1A08AVTS35C
256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
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30
FREESCALE
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