关闭背景特效

MR18R162GEG0-CT9 [SAMSUNG]

Key Timing Parameters; 关键时序参数

MR18R162GEG0-CT9


元器件型号：	MR18R162GEG0-CT9
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	Key Timing Parameters 关键时序参数存储内存集成电路动态存储器时钟
PDF文件：	总16页 (文件大小：443K)
下载文档：	下载PDF数据表文档文件
型号参数：MR18R162GEG0-CT9参数

MR18R162GMN1-CG6

DRAM

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0 SAMSUNG

MR18R162WDG0-CK8

Rambus DRAM Module, 512MX18, 45ns, CMOS, RIMM-184

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0 SAMSUNG

MR18R162WDG0-CM8

Rambus DRAM Module, 512MX18, 40ns, CMOS, RIMM-184

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0 SAMSUNG

MR18R326GAG0

(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

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26 SAMSUNG

MR18R326GAG0

(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

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13 SAMSUNG

MR18R326GAG0-CM8

(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

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16 SAMSUNG

MR18R326GAG0-CM8

(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

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17 SAMSUNG

MR18R326GAG0-CT9

(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

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21 SAMSUNG

MR18R326GAG0-CT9

(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

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15 SAMSUNG

MR18W

FIXED METAL FILM RESISTORS

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34 ABCO

MR1A08ACTS35C

256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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19 FREESCALE

MR1A08ACYS35

64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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13 FREESCALE

MR1A08ACYS35

256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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11 FREESCALE

MR1A08ATS35C

SPECIALTY MEMORY CIRCUIT, PDSO44, 0.400 MM, ROHS COMPLIANT, PLASTIC, TSOP2-44

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0 PHILIPS

MR1A08AVTS35C

256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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30 FREESCALE

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