SSD2015 [SAMSUNG]
Power Field-Effect Transistor, 3.2A I(D), 12V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8;
| 型号： | SSD2015 |
| 厂家： | 
SAMSUNG |
| 描述： | Power Field-Effect Transistor, 3.2A I(D), 12V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 光电二极管 晶体管 |
| 文件： | 总1页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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94
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N-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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N-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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18
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0
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N-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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15
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P-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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23
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P-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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14
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SSD20P06-135D
P-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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20
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P-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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1
SECOS
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2
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19
ETC
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