SSR2N60 [SAMSUNG]
Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3;
| 型号： | SSR2N60 |
| 厂家： | 
SAMSUNG |
| 描述： | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 晶体管 |
| 文件： | 总1页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SSR2N60ATF
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FAIRCHILD
SSR2N60ATM
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SSR2N60B
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SSR2N60BTF
Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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SSR2N60BTM
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ROSETTENKNOPF SELBSTMONTAGE M10 10STWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ETC
SSR3045CTG
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SSR3045CTGTX
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SSDI
SSR3045CTGTXV
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SSR3055L
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ETC
SSR3055LA
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ETC
SSR30C100S1
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SSR30C100S1S
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SSDI
SSR30C100S1TX
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SSR30C100S1TXV
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SSR30C100S1_1
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SSDI
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