SSR3055 [SAMSUNG]

Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3;
SSR3055
型号: SSR3055
厂家: SAMSUNG    SAMSUNG
描述:

Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

开关 脉冲 晶体管
文件: 总1页 (文件大小:28K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

SSR3055A

ADVANCED POWER MOSFET

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SAMSUNG

SSR3055L

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-252

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ETC

SSR3055LA

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-252AA

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ETC

SSR30C100S1

30 A / 1200 V Schottky Silicon Carbide Rectifier

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SSDI

SSR30C100S1S

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 PIN

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SSDI

SSR30C100S1TX

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 PIN

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SSDI

SSR30C100S1TXV

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 PIN

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SSDI

SSR30C100S1_1

Schottky Silicon Carbide Rectifier

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SSDI

SSR30C120S1

30 A / 1200 V Schottky Silicon Carbide Rectifier

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SSDI

SSR30C120S1S

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN

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SSDI

SSR30C120S1TX

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN

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SSDI

SSR30C120S1TXV

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN

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SSDI