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IRF9631 [SAMSUNG]

P-CHANNEL POWER MOSFETS; P沟道功率MOSFET

IRF9631


元器件型号：	IRF9631
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	P-CHANNEL POWER MOSFETS P沟道功率MOSFET
PDF文件：	总12页 (文件大小：512K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF9631参数

IRF9632

P-CHANNEL POWER MOSFETS

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12 SAMSUNG

IRF9632

P-CHANNEL POWER MOSFETS

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39 SAMSUNG

IRF9632

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 3A I(D) | TO-220AB

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46 ETC

IRF9632

Transistor

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0 VISHAY

IRF9632

Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9633

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB

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27 ETC

IRF9633

P-CHANNEL POWER MOSFETS

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42 SAMSUNG

IRF9633

P-CHANNEL POWER MOSFETS

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17 SAMSUNG

IRF9640

P-CHANNEL POWER MOSFETS

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361 SAMSUNG

IRF9640

P-CHANNEL POWER MOSFETS

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545 SAMSUNG

IRF9640

Power MOSFET

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604 VISHAY

IRF9640

11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

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529 INTERSIL

IRF9640

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)

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2640 IRF

IRF9640-004PBF

Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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3 VISHAY

IRF9640-005

Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 VISHAY

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