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2SD2401_01 [SANKEN]

Silicon NPN Triple Diffused Planar Transistor; 硅NPN三重扩散平面晶体管
2SD2401_01
型号： 2SD2401_01
厂家： SANKEN ELECTRIC    SANKEN ELECTRIC
描述：

Silicon NPN Triple Diffused Planar Transistor
硅NPN三重扩散平面晶体管

晶体 晶体管
文件： 总1页 (文件大小：29K)
中文：  中文翻译
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C
E
Equivalent circuit  
B
Darlington 2 S D2 4 0 1  
(70Ω)  
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570)  
Application : Audio, Series Regulator and General Purpose  
External Dimensions MT-200  
(Ta=25°C)  
■Absolute maximum ratings (Ta=25°C)  
■Electrical Characteristics  
Ratings  
Symbol  
Ratings  
100max  
100max  
150min  
5000min  
2.5max  
3.0max  
55typ  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Conditions  
Unit  
µA  
µA  
V
Unit  
±0.2  
6.0  
±0.3  
36.4  
24.4  
160  
ICBO  
VCB=160V  
V
±0.2  
2.1  
±0.1  
2-ø3.2  
IEBO  
150  
VEB=5V  
9
V
V(BR)CEO  
hFE  
5
IC=30mA  
V
12  
1
VCE=4V, IC=7A  
IC=7A, IB=7mA  
IC=7A, IB=7mA  
VCE=12V, IE=–2A  
VCB=10V, f=1MHz  
A
a
b
V
V
VCE(sat)  
VBE(sat)  
fT  
IB  
A
PC  
150(Tc=25°C)  
150  
W
°C  
°C  
2
MHz  
pF  
Tj  
3
+0.2  
-0.1  
0.65  
+0.2  
-0.1  
COB  
95typ  
1.05  
Tstg  
–55 to +150  
+0.3  
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)  
■Typical Switching Characteristics (Common Emitter)  
3.0  
-0.1  
±0.1  
±0.1  
5.45  
5.45  
B
C
E
Weight : Approx 18.4g  
a. Part No.  
VCC  
(V)  
RL  
(Ω)  
IC  
(A)  
VBB1  
(V)  
VBB2  
(V)  
IB1  
(mA)  
IB2  
(mA)  
ton  
(µs)  
tstg  
(µs)  
tf  
(µs)  
b. Lot No.  
70  
10  
7
10  
–5  
7
–7  
0.5typ  
10.0typ  
1.1typ  
–
–
–
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=4V)  
12  
12  
10  
8
3
10  
8
2
IC=10A  
IC=7A  
6
6
0.6mA  
IC=5A  
4
1
4
2
IB=0.4mA  
2
0
0
0
0
2
4
6
0.2 0.5  
1
5
10  
50 100 200  
0
1
2
2.6  
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Base-Emittor Voltage VBE(V)  
–
–
–
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=4V)  
(VCE=4V)  
2
40000  
70000  
50000  
125˚C  
Typ  
1
10000  
5000  
25˚C  
10000  
0.5  
5000  
–30˚C  
1000  
600  
0.2  
1000  
02  
0.1  
1
5
10  
50 100  
Time t(ms)  
500 1000 2000  
0.5  
1
5
1012  
0.5  
1
5
10 12  
Collector Current IC(A)  
Collector Current IC(A)  
–
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
–
Pc Ta Derating  
(VCE=12V)  
160  
30  
100  
80  
10  
5
120  
80  
Typ  
60  
1
40  
0.5  
40  
Without Heatsink  
Natural Cooling  
20  
0
0.1  
Without Heatsink  
5
0
0.05  
3
5
10  
50  
100  
200  
–0.02  
–0.1  
–1  
Emitter Current IE(A)  
–10  
0
25  
50  
75  
100  
125  
150  
150  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
151  

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