RBV-1004B [SANKEN]

Bridge Diodes (Schottky Barrier); 桥二极管(肖特基势垒)
RBV-1004B
型号: RBV-1004B
厂家: SANKEN ELECTRIC    SANKEN ELECTRIC
描述:

Bridge Diodes (Schottky Barrier)
桥二极管(肖特基势垒)

二极管
文件: 总1页 (文件大小:28K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Bridge Diodes (Schottky Barrier)  
Electrical Characteristics (Ta =25°C)  
Absolute Maximum Ratings  
Others  
Mass  
Parameter  
IFSM  
(A)  
50Hz  
Half-cycle Sinewave  
Single Shot  
Tj  
(°C)  
Tstg  
(°C)  
VF  
(V)  
IR  
(mA)  
IR  
t
(H)  
(mA)  
rr  
(ns)  
Rth (j-c)  
IF (AV)  
With  
VRM  
(V)  
(A)  
Fig.  
Type No.  
max per  
VR =VRM  
V
R
=V , Ta=100°C  
RM  
IF  
IF  
(mA)  
/IRP  
(°C/ W)  
(g)  
Heatsink  
element  
max per element  
max per element  
(A)  
40  
60  
40  
0.55  
RBV-404B  
RBV-406B  
RBV-1004B  
4.0  
40  
60  
2.0  
5.0  
2.0  
5.0  
20  
–40 to +125  
0.62  
0.55  
100  
100/100  
5.0  
4.25  
A
35  
10.0  
(Tj=125°C)  
RBV-404B  
VF—IF Characteristics (Typical)  
VR—IR Characteristics (Typical)  
IFMS Rating  
Ta IF(AV) Derating  
4.0  
20  
20  
10  
40  
30  
20  
10  
0
10  
=
T
a
125ºC  
20ms  
3.2  
2.4  
1.6  
0.8  
0
100ºC  
60ºC  
1
1
0.1  
0.01  
=
0.1  
T
a
125ºC  
100ºC  
60ºC  
25ºC  
30  
26ºC  
0.01  
0.001  
0
0.5  
1.0  
1.5  
1
1
1
5
10  
50  
50  
50  
0
25  
45 50  
75  
100  
125  
0
10  
20  
40  
50  
Ambient Temperature Ta (°C)  
Forward Voltage VF (V)  
Reverse Voltage VR (V)  
Overcurrent Cycles  
RBV-406B  
VF—IF Characteristics (Typical)  
VR—IR Characteristics (Typical)  
IFMS Rating  
Ta IF(AV) Derating  
4.0  
30  
50  
10  
40  
30  
20  
10  
0
=
T
a
125ºC  
10  
100ºC  
20ms  
3.2  
2.4  
1.6  
0.8  
0
1
1
60ºC  
25ºC  
0.1  
0.01  
0.1  
0.01  
=
T
a
125ºC  
100ºC  
60ºC  
25ºC  
0.001  
0.001  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
5
10  
0
25 40 50  
75  
100  
125  
0
10  
20 30  
40  
50  
60 70  
Ambient Temperature Ta (°C)  
Forward Voltage VF (V)  
Reverse Voltage VR (V)  
Overcurrent Cycles  
RBV-1004B  
VF—IF Characteristics (Typical)  
VR—IR Characteristics (Typical)  
IFMS Rating  
Tc —IF(AV) Derating  
10  
100  
10  
1
50  
10  
60  
50  
40  
30  
20  
Sinewave  
=
T
a
125ºC  
20ms  
D.C.  
8
6
4
2
0
100ºC  
60ºC  
25ºC  
=
t / T 1/2  
1
=
t / T 1/ 3  
=
t / T 1/6  
0.1  
0.01  
=
T
a
125ºC  
100ºC  
60ºC  
Tj=125ºC  
VR=40V  
0.1  
10  
0
t
T
25ºC  
0.01  
0.005  
0.001  
0
20  
40  
60  
80 100 120 140  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4  
Forward Voltage VF (V)  
5
10  
0
10  
20  
30  
40  
50  
60  
Case Temperature Tc (°C)  
Reverse Voltage VR (V)  
Overcurrent Cycles  
External Dimensions  
(Unit: mm)  
Fig.  
A
4.6  
3.2±0.1  
25  
3.6  
Flammability:  
C3  
UL94V-0 or Equivalent  
+
4---1.0  
0.7  
+
2.7±0.1  
7.5 7.5 7.5  
25  

相关型号:

RBV-1306

Bridge Diodes
SANKEN

RBV-1506

Bridge Diodes
SANKEN

RBV-1506J

暂无描述
SANKEN

RBV-1506J

Bridge Rectifier Diode, 1 Phase, 15A, 600V V(RRM), Silicon, RBV-60, 4 PIN
ALLEGRO

RBV-1506S

Bridge Diodes
SANKEN

RBV-150C

暂无描述
ALLEGRO

RBV-2506

Bridge Diodes
SANKEN

RBV-3006

Bridge Rectifier Diode, 1 Phase, 30A, 600V V(RRM), Silicon, RBV-60, 4 PIN
SANKEN

RBV-401

Bridge Diodes
SANKEN

RBV-401

Bridge Rectifier Diode, 1 Phase, 4A, 100V V(RRM), Silicon, RBV-40, 4 PIN
ALLEGRO

RBV-401

4.0A GLASS PASSIVATED BRIDGE RECTIFIER
SENO

RBV-402

Bridge Diodes
SANKEN