SJPE-H3 [SANKEN]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon, SJP, 2 PIN;
| 型号： | SJPE-H3 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon, SJP, 2 PIN 光电二极管 |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4-4 Schottky Barrier Diodes
Low IR “E Series”
●Surface-Mount
Package
IFSM
(A)
50Hz
IR
(mA)
VR=VRM
max
IR(H)
(mA)
VR=VRM
max
VF
(V)
max
Rth(j-l)
VRM
(V)
IF (AV)
(A)
Tj
(°C)
Tstg
(°C)
IF
(A)
Tj
(°C)
Mass
(g)
Axial
Part Number
Rth(j-c)
°
(Body Diameter/Lead Diameter)
(
/W)
C
Single Half Sine Wave
30
40
2.0 Surface-Mount (SJP) SJPE-H3*
2.0 Surface-Mount (SJP) SJPE-H4
40
40
-40 to +150
-40 to +150
0.55
0.6
2.0
2.0
0.2
70 150(Ta)
20
20
0.072
0.072
0.05
20 150
*Under development
●Thru-Hole
IFSM
(A)
50Hz
IR
(mA)
VR=VRM
max
IR(H)
VF
(V)
max
Rth(j-l)
Mass
VRM
(V)
IF (AV)
(A)
Tj
(°C)
Tstg
(°C)
IF
(A)
(mA)
VR=VRM
max
Tj
(°C)
Package
Part Number
Rth(j-c)
(g)
(°C/W)
Single Half Sine Wave
20 TO-220F(Center-tap) FMEN-2208
30 TO-220F(Center-tap) FMEN-2308
10 TO-220F(Center-tap) FMEN-210A
15 TO-220F(Center-tap) FMEN-215A*
20 TO-220F(Center-tap) FMEN-220A
20 TO-3PF(Center-tap) FMEN-420A
30 TO-220F(Center-tap) FMEN-230A
120
150
100
100
120
120
150
150
150
100
120
120
150
-40 to +150
0.76
10
15
5.0
7.5
10
10
15
15
15
5.0
10
10
15
0.2
0.3
0.1
0.15
0.2
0.2
0.3
0.25
0.3
0.1
0.2
0.2
0.3
100
150
50
150
150
150
150
150
150
150
150
150
150
150
150
4.0
4.0
4.0
4.0
4.0
2.0
4.0
1.5
2.0
4.0
4.0
2.0
4.0
2.1
2.1
2.1
2.1
2.1
6.5
2.1
1.55
6.5
2.1
2.1
6.5
2.1
80
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
0.765
0.85
0.85
0.85
0.85
0.85
0.90
0.85
0.92
0.92
0.85
0.92
75
100
100
150
125
150
25
100
30
TO-262
MPEN-230AF
30 TO-3PF(Center-tap) FMEN-430A
10 TO-220F(Center-tap) FMEN-210B
20 TO-220F(Center-tap) FMEN-220B
20 TO-3PF(Center-tap) FMEN-420B
30 TO-220F(Center-tap) FMEN-230B
50
150
100
75 150(Ta)
*Under development
Low VF/Low IR Balance “J Series”
●Surface-Mount
IFSM
(A)
IR
(mA)
VR=VRM
max
IR(H)
VF
(V)
max
Rth(j-l)
Mass
VRM
(V)
IF (AV)
(A)
Tj
(°C)
Tstg
(°C)
IF
(A)
(mA)
VR=VRM
max
Tj
(°C)
Package
Part Number
Rth(j-c)
(g)
50Hz
Single Half Sine Wave
(°C/W)
1.0 Surface-Mount (SJP) SJPJ-D3
2.0 Surface-Mount (SJP) SJPJ-H3*
3.0 Surface-Mount (SJP) SJPJ-L3
30
50
60
-40 to +150
0.45
0.45
0.45
1.0
2.0
3.0
0.1
0.2
0.3
35
70
150
150
150
20
20
20
0.072
0.072
0.072
30
-40 to +150
-40 to +150
150
*Under development
●Thru-Hole
IFSM
(A)
50Hz
IR
(mA)
VR=VRM
max
IR(H)
(mA)
VR=VRM
max
Package
Axial
(Body Diameter/Lead Diameter)
VF
(V)
max
Rth(j-l)
Mass
VRM
(V)
IF (AV)
(A)
Tj
(°C)
Tstg
(°C)
IF
(A)
Tj
(°C)
Part Number
RJ 43
Rth(j-c)
(g)
(°C/W)
Single Half Sine Wave
3.0
Axial(φ6.5/φ1.4)
50
100
150
-40 to +150
0.45
0.45
0.48
3.0
5.0
15
3.0
5.0
15
100
150
8.0
4.0
4.0
1.2
2.1
2.1
30
10 TO-220F(Center-tap) FMJ-23L
30 TO-220F(Center-tap) FMJ-2303
-40 to +150
-40 to +150
175 150(Ta)
500
150
Diodes
197
Package Type (Dimensions)
• No. 1 Surface-Mount (SJP)
• No. 2 Surface-Mount (D pack)
• No. 3 Surface-Mount (D pack) Center-tap
2.3±0.4
6.5±0.4
5.4±0.4
5.4
4.1
4.5±0.2
2.3±0.4
6.5±0.4
5.4±0.4
5.4
4.1
0.55±0.1
0.55±0.1
2.9
2.9
a.
b.
a.
b.
4.9
4.9
c.
c.
0 to 0.25
0 to 0.25
a: Part Number
b: Polarity
c: Lot No.
a: Part Number
b: Polarity
c: Lot No.
1.15±0.1
1.15±0.1
0.8±0.1
0.8±0.1
0.8±0.1
0.8±0.1
2.29±0.5
2.29±0.5
2.29±0.5
2.29±0.5
1
2
(Common to heatsink)
3
0.55±0.1
1.5max
0.55±0.1
1.5max
1
2
(Common to heatsink)
3
1.3±0.4
NC
Cathode
Anode
1.3±0.4
1.5±0.2
+0.4
–0.1
Anode Cathode(Common) Anode
5.0
1
2
3
1
2
3
• No. 4 Surface-Mount (TO263)
• No. 5 Surface-Mount (TO220S)
MPL-102S, MP2-202S, MPL-1036
• No. 6 Surface-Mount (TO220S)
0.2
4.44±
0.3
10.2±
4.44±
0.2
4.5±
0.2
1.3±
0.1
9.9±
0.2
(5)
0.2
1.3±
1.3±
0.2
1.2±
0.2
(0.4)
°
(15 )
°
(3
)
10.2±
0.3
a
b
c
( 1.5 Dp0.2)
φ
(4.6)
°
(3
)
+
–
0.2
9.2±
0.2
0.1
0.1
0.1±
0.15
15.3±
0.3
1
2
3
0.2
2.59±
0.2
1.27±
10.0±
0.2
2.4±
0.2
1.4±
0.2
+
0.2
2.0±
0.1
+0.2
0.1
0.4±
(R0.3)
0.86
–0.1
–
0.1
0.86
4.9±
0.2
+0.2
–0.1
A
1.34
0.2
1.2±
1.27±
0.1
2.54±
0.3
(0.75)
2.54±
0.1
(Measured at the root)
2.54±
0.1
(Measured at the root)
a: Part Number
b: Polarity
c: Lot No.
0.8±
0.1
0.5
0.5
2.54±
2.54±
0.5±
0.1
2.54TYP
2.54TYP
q
q
w
w
e
*w is common to the frame.
e
• No. 7 Surface-Mount (TO220S) Center-tap
• No. 8 Surface-Mount (SZ-10)
• No. 9 Axial (φ2.4/φ0.6)
0.2
4.44±
0.3
10.2±
0.2
1.3±
8.5±
0.5
10±
0.3
10.0±
0.3
φ
0.57±0.02
5±
0.3
5.0±
0.3
2±
0.3
(4.6)
a
b
c
Cathode band
+
–
0.2
0.1
0.1
0.2
2.59±
0.2
1.27±
5.0±
0.3
+
0.2
φ
2.4±0.1
0.1
0.4±
–
0.1
0.86
0.2
1.2±
(2.5)
2.7±
0.3
3±
0.5
a: Part Number
b: Polarity
7.2±
0.5
0.5
0.5
2.54±
2.54±
c: Lot No.
q
w
w
e
q
e
• No. 10 Axial (φ2.7/φ0.6)
• No. 11 Axial (φ2.7/
φ
0.6)
• No. 12 Axial (φ2.7/φ0.78)
Silicon Varistors (Symmetrical)
0.78±0.05
φ
0.6±0.05
φ
φ
0.6
Cathode band
Cathode band
±0.2
φ
2.7
2.7±0.2
φ
2.7±0.2
φ
Diodes
200
相关型号：
©2020 ICPDF网 联系我们和版权申明