SLA5027 [SANKEN]

MOS FET Array; MOS FET阵列
SLA5027
型号: SLA5027
厂家: SANKEN ELECTRIC    SANKEN ELECTRIC
描述:

MOS FET Array
MOS FET阵列

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中文:  中文翻译
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MOS FET Array SLA5027  
External Dimensions SLA (LF800)  
Absolute Maximum Ratings  
Electrical Characteristics  
(Ta =25ºC)  
(Ta =25ºC)  
Unit  
Ratings  
typ  
Symbol  
Ratings  
60  
Unit  
V
Symbol  
Test Conditions  
min  
60  
max  
V
DSS  
31.0±0.2  
24.4±0.2  
16.4±0.2  
Ellipse 3.2±0.15 • 3.8  
4.8±0.2  
1.7±0.1  
V
GSS  
±20  
V
I
D
=
100µA,  
V
GS  
=
0V  
V
(BR) DSS  
V
3.2±0.15  
VGS = ±20V  
I
D
±12  
A
I
±100  
100  
2.0  
µA  
µA  
GSS  
1
±48  
V
=
=
60V,  
10V,  
V
=
0V  
I
*
A
DS  
GS  
I
D (pulse)  
DSS  
V
S
V
V
DS  
I =  
D
1mA  
1.0  
6.0  
1.5  
12.0  
0.07  
1100  
500  
5 (Ta =25ºC, 4 circuits operate)  
W
W
TH  
P
E
T
a
R
V
=
10V,  
4V,  
I =  
D
8A  
8A  
60 (Tc=25ºC,4 circuits operate)  
e (yfs)  
DS  
b
2
R
*
250  
2.08  
DS (ON)  
V
GS  
=
I =  
D
0.08  
AS  
j-c  
mJ  
ºC/W  
Vrms  
ºC  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
Ciss  
Coss  
Crss  
V
=
10V  
1.0MHz  
0V  
DS  
12  
Pin  
1.2±0.15  
1
(Fin to lead terminal) AC1000  
150  
V
f
=
+0.2  
–0.1  
ISO  
+0.2  
–0.1  
2.2±0.7  
0.85  
0.55  
V
=
GS  
1.45±0.15  
170  
T
ch  
0.7  
1.0  
=
27.94±  
11• P2.54±  
Tstg  
ºC  
t
–55 to +150  
d (on)  
I
DD  
L
=
8A  
30V  
3.75Ω  
50  
250  
250  
180  
1.0  
D
V
31.5 max  
t
t
t
*
*2  
1
PW 250µs, duty 1%  
VDD 30V, 10mH, unclamped, RG  
r
R
=
=
L
=
=
50Ω  
d (off)  
f
V
= 5V  
GS  
R
=
50Ω  
1
2
3
4
5
6
7
8
9
10 11 12  
G
a) Type No.  
b) Lot No.  
I
SD  
=
10A,  
V
GS  
=
0V  
1.5  
V
SD  
(Unit: mm)  
ID VDS  
Characteristics  
ID VGS  
Characteristics  
Characteristics  
R
DS (on) ID  
10  
12  
0.1  
VDS  
=
10V  
10  
8
8
6
4
2
VGS  
=
=
4V  
4V  
5V  
10V  
6
0.05  
VGS  
10V  
VGS = 3V  
T
a
=
150ºC  
75ºC  
25ºC  
4
–55ºC  
2
0
0
0
0
0
1
2
3
4
5
6
150  
50  
1
2
3
4
0.1  
1
10 20  
VDS (V)  
VGS (V)  
ID (A)  
Characteristics  
Characteristics  
— Characteristics  
RDS (on) TC  
R
e (yfs) ID  
30  
IDR VSD  
0.12  
20  
VDS = 10V  
VGS = 0V  
VGS = 4V  
10  
5
0.10  
10  
5
VGS = 10V  
1
0.06  
0.02  
0.5  
2
0.4  
0.1  
0
1
5
10  
20  
0.4  
0.8  
1.2  
–50  
0
50  
100  
ID (A)  
VSD (V)  
Tc (ºC)  
Capacitance —  
2000  
Characteristics  
VDS  
Safe Operating Area (single pulse)  
Equivalent Circuit Diagram  
(Ta = 25ºC)  
50  
ID  
max  
(pulse)  
VGS  
= 0V  
1MHz  
f
=
1000  
500  
Ciss  
ID (DC) max  
10  
5
3
6
7
10  
Coss  
1
4
8
11  
2
5
9
12  
Crss  
100  
1
50  
1
0.5  
0.5  
5
10  
1
5
10  
50 100  
VDS (V)  
VDS (V)  
82  

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