PWB130A [SANREX]
THYRISTOR MODULE (NON-ISOLATED TYPE); 晶闸管模块（非绝缘型）
| 型号： | PWB130A |
| 厂家： | 
SANREX CORPORATION |
| 描述： | THYRISTOR MODULE (NON-ISOLATED TYPE) |
| 文件： | 总2页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
（NON-ISOLATED TYPE）
THYRISTOR MODULE
PWB130A
PWB130A is a Thyristor module suitable for low voltage, 3 phase recifier applications.
●
T(AV)
I
130A (each device)
93.5max
● high Surge Current 3500 A (50/60Hz)
● Easy Construction
2-φ6.5
80
K2
2
K3
3
K2
G2
K1
1
● Non-isolated. Mounting base as common Anode terminal
K1G1
G3 K3
16.5
23
23
3-M5
（Applications）
Welding power Supply
Various DC power Supply
6-♯110TAB
K3
K2
K1 K2
2
3
1
G2
K1G1
G3 K3
A
Unit：
A
■Maximum Ratings
Ratings
PWB130A30
300
Symbol
Item
Unit
PWB130A20
PWB130A40
RRM
V
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
200
240
200
400
480
400
V
V
V
RSM
V
360
DRM
V
300
Symbol
Item
Conditions
Ratings
130
Unit
A
T（AV）
I
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
Single phase, half wave, 180°conduction, Tc：112℃
T（RMS）
I
204
A
Single phase, half wave, 180°conduction, Tc：112℃
1
TSM
I
A
／cycle, 50Hz/60Hz, peak value, non-repetitive
3200 3500
/
2
2
2
2
I t
I t
51000
A S
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
W
W
A
G（AV）
P
1
FGM
I
3
10
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of On-State Current
Operating Junction Temperature
Storage Temperature
V
RGM
V
5
V
1
G
D
DRM
G
50
di dt
/
I ＝200mA，Tj＝25℃，V ＝
／
2V ，dI dt＝1A μs
A μs
/
/
/
Tj
－30 to ＋150
－30 to ＋125
4.7（48）
2.7（28）
170
℃
℃
Tstg
Mounting（M6） Recommended 2.5-3.9（25-40）
Terminal（M5） Recommended 1.5-2.5（15-25）
Mounting
torque
N･ｍ
（kgf･B）
Mass
g
■Electrical Characteristics
Ratings
Symbol
Item
Conditions
at V , single phase, half wave, Tj＝150℃
Unit
Mix. Typ. Min.
DRM
I
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current, max.
Gate Trigger Voltage, max.
Non-Trigger Gate, Voltage. min.
DRM
30
mA
mA
V
RRM
I
DRM
30
at V , single phase, half wave, Tj＝150℃
TM
V
1.2
On-State Current 410A, Tj＝150℃ Inst. measurement
GT
I
T
D
150
Tj＝25℃，I ＝1A，V ＝6V
mA V
/
GT
V
T
D
2
Tj＝25℃，I ＝1A，V ＝6V
mA V
/
1
GD
V
D
DRM
0.25
V
Tj＝150℃，V ＝／V
2
T
G
I ＝100A，I ＝200mA，Tj＝25℃，
tgt
Turn On Time, max.
10
μs
1
D
DRM
G
/
V ＝／V ，dI dt＝1A μs
/
2
2
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
D
DRM
50
70
0.2
dv dt
Tj＝150℃，V ＝／V ，Exponential wave.
V μs
/
/
3
H
I
mA
Tj＝25℃
Thermal Impedance, max.
Rth（j-c）
Junction to case（1／Module）
℃ W
/
3
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
PWB130A
Gate Characteristics
On-State Voltage max
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